一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

Cu2ZnSn(S,Se)4薄膜太阳电池研究进展

CdTe和Cu(In,Ga)(S,Se)₂ (CIGSSe)光吸收材料在新型化合物半导体太阳电池研究中占据着主导地位。尽管CdTe和CIGS太阳电池拥有较高的转换效率和先进的技术,但是仍存在着一些问题,如所用材料中的元素地壳丰度低或有毒,这阻碍了其未来的大规模应用。近年来,由于Cu₂ZnSn(S,Se)₄ (CZTSSe)薄膜太阳电池使用的元素地壳含量丰富且环境友好,逐渐成为了研究的热点。CZTSSe光吸收材料被认为能够取代CdTe和CIGS成为下一代光伏技术的潜力材料。基于此,本文将简单介绍CZTSSe材料的结构、性质和制备方法。重点阐述CZTSSe材料的组装技术和沉积方法的发展和优势,如基于真空的沉积方法和基于溶液的沉积方法,简述其优缺点。此外,本文对CZTSSe组装和CZTSSe纳米晶制备方法的最新研究进展也进行了总结。最后,对CZTSSe光伏技术的一些限制因素进行了分析,并对CZTSSe薄膜电池未来的研究前景进行了展望。     

Cu(SCN)2-水系电沉积制备CuSCN薄膜

Cu(SCN)2-水系电沉积制备CuSCN薄膜;p-CuSCN薄膜;电化学沉积;EDTA     

n型Bi_2Te_(3-y)Se_y温差电材料薄膜的电化学制备及表征

采用电化学控电位的方法在不锈钢基片上电沉积制备了Bi2Te3-ySey温差电材料薄膜。研究了电沉积溶液中硒含量与薄膜中硒含量的关系,考察了不同沉积电位对电沉积Bi2Te3-ySey薄膜的温差电性能的影响,并采用ESEM、EDS、XRD等方法对电沉积薄膜的形貌、成分及结构进行了分析。结果表明,在含有Bi3 、HTeO2 和Se4 的电沉积溶液中,采用电化学沉积的方法,可实现铋、碲、硒三元共沉积,生成Bi2Te3-ySey半导体化合物。改变电沉积溶液组成,可控制Bi2Te3-ySey化合物中硒的掺杂浓度。-0.04V沉积电位下制备的Bi2Te3-ySey薄膜较平整、致密,组成为Bi2Te2.7Se0.3。退火处理可提高电沉积Bi2Te3-ySey薄膜的塞贝克系数,且控制沉积电位为-0.04V下制备的Bi2Te3-ySey薄膜退火后的塞贝克系数为-123μV·K-1。     

Cd-Te薄膜的制备及表征

Cd-Te是一种重要的光电材料,它的禁带宽度为1·45eV,光吸收系数很大,厚度1μm的薄膜足以吸收能量大于CdTe禁带宽度的光所具有能量的99%[1],因此它是一种十分理想的太阳电池材料。Cd-Te薄膜制备的方法有喷涂法、电沉积法、丝网印刷法、分子束外延法、化学气相沉积法、近空间升华     

Cu(Ⅱ)Fe(Ⅲ)Cu(Ⅱ)异三核配合物的合成及表征

合成了三种以草酸根为桥联配体的异三核配合物。经元素分析、红外光谱、电子光谱、摩尔电导及室温磁矩对配合物的组成和结构进行了表征。研究表明 ,在Cu(Ⅱ ) Fe(Ⅲ ) Cu(Ⅱ )离子间存在着反铁磁相互作用。     

Ga和Cu/In衬底上电沉积金属Ga

在酸性水溶液中,分别在金属Ga和Cu/In衬底上进行了Ga电沉积的研究。用循环伏安法研究了导电盐、pH值对电沉积Ga的影响。系统研究了Ga的沉积过程,发现Ga会逐渐向薄膜内部扩散,在Cu/In界面上与CuIn合金反应生成CuGa₂合金。针对Cu/In薄膜和Ga薄膜是活泼金属的特点,在溶液中加入三乙醇胺有效地保护了Cu/In薄膜和Ga金属薄膜不被氧化,并且提高了Ga沉积的电流效率。在Cu/In薄膜上制备出了均匀光亮的金属Ga薄膜。对电沉积出Cu-In-Ga预置层进行了硒化处理,得到了质量较好的Cu(In_1-xGa_x)Se₂(CIGS)薄膜,并制备了太阳电池。电池效率达到了9.42%。     

金刚烷甲酸铜(Ⅱ)配合物Cu(ada)2(py)2(H2O)的合成和晶体结构

金刚烷甲酸铜(Ⅱ)配合物Cu(ada)2(py)2(H2O)的合成和晶体结构     

[(dien)Cu(imH)](ClO_4)_2、[(tren)Cu(imH)](ClO_4)_2中配位咪唑的离解

本文用紫外可见光谱、pH滴定等方法研究了配合物[(dien)Cu(imH)]1(ClO_4)_2、[(tren)Cu(imH))(ClO_4)_2中Cu-imH的配位和离解作用,得到了它们的稳定常数,并探索了共存配体的影响。     

Evolution of Cu(In,Ga)Se2 surfaces under water immersion monitored by X-ray photoelectron spectroscopy

Cu(In,Ga)Se₂ absorbers were immerged in deionized water for different times, and specific chemical evolutions were monitored thanks to X-ray photoemission spectroscopy. Cu(In,Ga)Se₂ related dissolution products were studied in water through induced coupled plasma optical emission spectroscopy. From those analyses, specific surface network disorganization was observed, with Cu migration towards the surface, leading to different kinetics of oxidation and dissolution for each element that could be quantified.     

Influence of Thermal Treatments on In-depth Compositional Uniformity of CuIn(S,Se)2 Thin Films

CuIn(S,Se)₂ thin films were prepared by thermal crystallization of co-sputtered Cu-In alloy precursors in S/Se atmosphere. In-depth compositional uniformity is an important prereq-uisite for obtaining device-quality CuIn(S,Se)₂ absorber thin films. In order to figure out the influence of heat treatments on in-depth composition uniformity of CuIn(S,Se)₂ thin films, two kinds of reaction temperature profiles were investigated. One process is "one step profile", referring to formation of CuIn(S,Se)₂ thin films just at elevated temperature (e.g. 500 oC). The other is "two step profile", which allows for slow diffusion of S and Se elements into the alloy precursors at a low temperature before the formation and re-crystallization of CuIn(S,Se)₂ thin films at higher temperature (e.g. first 250 oC then 500 oC). X-ray diffrac-tion studies reveal that there is a discrepancy in the shape of (112) peak. Samples annealed with "one step profile" have splits on (112) peaks, while samples annealed with "two step profile" have relatively symmetrical (112) peaks. Grazing incident X-ray diffraction and en-ergy dispersive spectrum measurements of samples successively etched in bromine methanol show that CuIn(S,Se)₂ thin films have better in-depth composition uniformity after "twostep profile" annealing. The reaction mechanism during the two thermal processing was also investigated by X-ray diffraction and Raman spectra.     

电沉积-退火工艺制备铜铟硒太阳能电池薄膜及表征

CuInSe₂ (CIS) films with good crystalline quality were synthesized by electrodeposition followed by annealing in Se vapor at 530 oC. The morphology, composition, crystal structure, optical and electrical properties of the CIS films were investigated by scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Raman spectroscopy, UV-VIS-NIR spectroscopy, and admittance spectroscopy. The results revealed that the annealed CIS films had chalcopyrite structure and consisted of relatively large grains in the range of 500-1000 nm and single grain of films extend usually through the whole film thickness. The band gap of CIS films was 0.98 eV and carrier concentration was in the order of 10¹⁶ cm^-3 after etching the Cu-Se compounds on the film surface. Solar cells with the structure of AZO/i-ZnO/CdS/CIS/Mo/glass were fabricated. Current density vs. voltage test under standard reported condition showed the solar cells with an area of 0.2 cm² had a conversion efficiency of 0.96%. The underlying physics was also discussed.     

铜锌锡硫硒薄膜太阳能电池一价金属替位的研究进展

铜锌锡硫硒(CZTSSe)电池具有组成元素丰度高且环境友好、光吸收系数高、带隙可调、高稳定性等优点,是一类非常有发展前景的新型薄膜太阳能电池.目前,CZTSSe电池最高认证效率为12.6％,与商品化铜铟镓硒(CIGS)电池相比仍然有较大差距,特别是开路电压(VOC)和填充因子(FF)偏低.开压损耗是制约CZTSSe器件...     

Cr掺杂金红石相TiO2(110)单晶薄膜的制备、表征及光催化活性

采用脉冲激光沉积术(PLD)同质外延生长了表面原子级平整的6%(原子比)Cr 掺杂的金红石相TiO₂(110)单晶薄膜, 采用扫描隧道显微镜(STM)、扫描隧道谱(STS)、X 射线光电子能谱(XPS)和紫外光电子能谱(UPS)对其进行了表征. 结果表明: Cr 掺杂对TiO₂(110)-(1×1)表面的形貌没有明显影响, 但是提高了掺杂薄膜在负偏压的导电性; Cr与晶格O键合而呈现+3价态, 由此在TiO₂的价带顶上方~0.4 eV处引入杂质能级. 紫外-可见光吸收谱显示薄膜的光吸收能力被扩展到~650 nm, 处于可见光范围. 借助STM以单个甲醇分子的光解反应检测了薄膜的光催化活性. 仅观察到紫外光照射下甲醇分子的脱氢反应, 在可见光照射下(λ>430 nm)甲醇分子没有发生反应, 表明单独的Cr掺杂可能不足以提高TiO₂在可见光下的催化活性.     

SnO2纳米薄膜的制备、显微结构及气敏性能

SnO2纳米薄膜的制备、显微结构及气敏性能;SnO2薄膜;溶胶-凝胶法     

TiCl4水解法制备TiO2薄膜的表征及光催化性能

TiCl4水解法制备TiO2薄膜的表征及光催化性能;TiCl4水解;TiO2薄膜;光催化;乙酸