原子团簇Ge_7的结构与稳定性

用分子图形软件设计出多种锗原子团簇Ge7的模型,并进行B3LYP密度泛函几何构型优化和振动频率计算,得到8种稳定的同分异构体结构。在锗原子团簇中,大部分原子以三、四、五配位成键。根据分子的总能量,最稳定的Ge7构型为D5h构型。Ge7稳定结构中高配位原子越多,构型越稳定。     

原子团族Ge7的结构与稳定性

用分子图形软件设计出多种锗原子团簇Ge7的模型，并进行B3LYP密度泛函几何构型优化和振动频率计算，得到8种稳定的同分异构体结构。在锗原子团簇中，大部分原子以三、四、五配位成键。根据分子的总能量，最稳定的Ge7模型为D5h构型。Ge7稳定结构中高配位原子越多，构型越稳定。     

小分子硫原子团簇的结构稳定性

用分子图形软件设计出68种硫原子团簇S_3～S_(13)的结构,使用B3LYP密度泛函进行几何构型优化和振动频率计算,排除了振动频率为负值的非局域极小点的结构,根据分子的总能量得出最稳定的同分异构体。在硫原子团簇中,除了部分原子采用一、三配位之外,大部分原子为二配位成键,带三配位的硫原子团簇的总能量较高,硫原子团簇难以生成高配位的笼状结构。从S_5开始链状结构能量高于环状,中性大分子硫原子团簇多呈链状结构。     

小分子硫原子团簇正离子的结构稳定性

用分子图形软件设计出49种硫原子团簇Sn+(n=3～13)的结构,使用B3LYP密度泛函进行几何构型优化和振动频率计算,根据分子的总能量得出最稳定的同分异构体.在硫原子团簇正离子中,大部分原子为二配位成键.带有一、三配位的原子结构的总能量较高.部分最稳定硫原子团簇正离子的构型与最稳定的中性硫原子团簇的构型完全不同.     

Pdn(n=2～13)团簇的密度泛函理论研究

采用密度泛函理论B3LYP方法计算并讨论钯原子团簇Pdn(n=2～13)结构模型.通过对钯原子团簇进行几何构型优化和振动频率计算,找出团簇总能量最低的同分异构体.由于Jahn-Teller效应的存在,团簇的最稳定结构采取对称性较低的几何构型.在钯原子数相同时,往往存在多个能量极为相近的稳定构型.单位原子平均静态极化率呈奇偶变化.     

铝原子Bernal多面体团簇的理论研究

将遗传算法用于铝原子团簇的构型计算.运用这种方法,从任意构型开始,较好地计算了6、8、9、10个铝原子组成的原子团簇的能量最低时的构型,发现这四种铝原子团簇的能量最低构型分别取四种Bernal多面体排列.并对得到的四种构型用密度泛函方法（DFT）进行量子化学计算,结果表明，这类构型是势能面上的极小值点,可以稳定存在.     

硫原子团簇负离子的螺旋结构

在使用B3LYP密度泛函进行几何构型优化和振动频率计算得到的硫原子团簇负离子的结构中,分子的总能量最低的S9- 到 S13-的同分异构体呈螺旋状构型。另外也计算了螺旋状的Sn- (n = 14~20)的结构。大多数的的硫负离子是链状结构,这与相应中性硫原子团簇的环状构型完全不同。     

磷原子团簇同分异构体的理论研究I:P5+、P5-和P5的预测

由激光产生的磷原子团簇正离子的质谱图中呈现很强的 P5 和 P5- 谱峰。使用分子图形学方法设计出 9种可能的同分异构体 ,对其中性及正负离子分子进行了分子力学、PM3半经验量子化学和 ADF密度泛函优化。在磷原子团簇模型中 ,磷原子采用 2、3或 4配位方式成键。从各异构体成键能量的比较可得知 ,最稳定的 P5 构型是四方锥的结构 ,最稳定的 P5-构型是平面五边形的结构 ,而最稳定的 P5构型是在最稳定的 P4的增加一个 2配位原子所生成的结构     

原子团簇P10模型的理论计算

用分子图形学方法设计出26种P10模型,并对其进行了分子力学、PM3半经验量子化学和Hartree-Fock从头算优化。在P10原子团簇模型设计中,磷原子采用一、二、三或四配位。大部分P10的模型是在P9+和P8的模型上分别增加1、2个原子生成的。这些模型包括15种在势能面上局域极小点和11种鞍点（或过渡态）。从模型优化后的能量比较可知,2个四面体P4与1个P2通过4个单键连接的桥式结构最稳定。从最稳定楔状P8可以派生多种构型,其中有一种的能量也相当低。由正四面体P4和楔状P8派生出的结构具有能量优势,它们是构造大分子磷原子团簇的重要的结构基元。在模型几何优化中,得到了带有2个一配位原子的特殊结构,它含有2个三键（1.95A）。     

锗分族元素二元团簇及其与Co形成的团簇离子

通过比较激光烧蚀E1/E2 (代表Ge/Sn， Ge/Pb和Sn/Pb) 和Co/E (E为Ge、Sn、Pb)混合样品形成的二元团簇负离子飞行时间质谱分布和谱峰的相对强度及形成的幻数团簇离子峰，发现E1/E2二元团簇离子中原子量大的锗分族元素在团簇离子中占主要组分，而原子量小的元素则少量掺杂，其组成和分布特点说明其结构和性质与纯E团簇离子相似，可能的结构为该类负离子团簇所有原子都在笼结构的骨架上；对于二元团簇离子GeSn9－、GePb9－和SnPb9－其结构可能是双帽反四棱柱构型，只是每个原子均为骨架的一部分.而对激光烧蚀过渡金属钴与锗分族元素的混合物的研究发现，反应形成了丰富的Co/E二元合金团簇负离子，分析发现该类簇离子为钴内包覆于E(锗分族元素)笼状结构.幻数离子CoGe10－、CoSn10－和CoPb10－可能具有双帽四角反棱柱结构，而CoPb12－可能具有二十面体构型，钴原子均为笼状结构的中心.     

Density functional theory study of twelve-atom germanium clusters: conflict between the Wade-Mingos rules and optimum vertex degrees

Density functional theory (DFT) at the hybrid B3LYP level has been applied to Ge(12)(z) bare germanium clusters (z = -6, -4, -2, 0, +2, +4, +6) starting from 11 initial configurations. The Wade-Mingos rules are seen to have limited value in rationalizing the results since they frequently require vertex degrees higher than the optimum vertex degree of 4 for germanium. Thus the expected I(h) regular icosahedron is no longer the global minimum for Ge(12)(2-) although it remains a low energy structure for Ge(12)(2-) lying only 5.6 kcal mol(-1) above a bicapped arachno structure conforming to the Wade-Mingos rules. The three lowest energy structures for Ge(12)(4-) within 11 kcal mol(-1) are a prolate (elongated) polyhedron with six quadrilateral faces and eight triangular faces, the dual of the bisdisphenoid with four trapezoidal and four pentagonal faces, and a polyhedron with two quadrilateral and 16 triangular faces related but not identical to the polyhedron found in the known tetracarbon carboranes R(4)C(4)B(8)H(8). The lowest energy structures for the neutral Ge(12) are seen to be distorted versions of the icosahedron and the bicapped 10-vertex arachno lowest energy structures for Ge(12)(2-). The low energy structures for the even more hypoelectronic Ge(12)(2+) and Ge(12)(4+) are even more unusual including a hexacapped octahedron, a tetracapped square antiprism, and a double cube for Ge(12)(2+) and a C(2v) structure with a central unique degree 6 vertex for Ge(12)(4+).     

多体展开势能函数在碳族元素原子簇研究中的应用III. 锗原子族的结构和相对稳定性

基于从晶体锗确立的多体展开势能函数, 本文通过坐标完全优化, 发现小的锗原子簇分子(Ge~2~Ge~14)倾向于形成密堆积结构, 表面原子分布以蝶形四元环(D~2d)为主; 常见立方晶体“微观晶体碎片”的分层优化结果表明, 在Ge~15~Ge~100范围内, 多数壳层的原子到分子中心的距离均受到压缩, 且以畸变的简单立方、面心立方及体心立方较为稳定; 在这些畸变密堆积结构中, 表面原子向内压缩最为严重, 使整个分子趋于球形化。较为开放的金刚石类层状原子族只有当所含原子数达数百以上时才可能相对更为稳定。     

Density functional study of 8- and 11-vertex polyhedral borane structures: comparison with bare germanium clusters

Density functional theory (DFT) at the hybrid B3LYP level has been applied to the polyhedral boranes B(n)H(n)(z) (n = 8 and 11, z = -2, -4, and -6) for comparison with isoelectronic germanium clusters Ge(n)(z). The energy differences between the global minima and other higher energy borane structures are much larger relative to the case of the corresponding bare germanium clusters. Furthermore, for both B(8)H(8)(2-) and B(11)H(11)(2-), the lowest energy computed structures are the corresponding experimentally observed most spherical deltahedra predicted by the Wade-Mingos rules, namely the D(2)(d) bisdisphenoid and the C(2)(v) edge-coalesced icosahedron, respectively. Only in the case of B(8)H(8)(2-) is there a second structure close (+2.6 kcal/mol) to the D(2)(d) bisdisphenoid global minimum, namely the C(2)(v) bicapped trigonal prism corresponding to the "square" intermediate in a single diamond-square-diamond process that can lead to the experimentally observed room temperature fluxionality of B(8)H(8)(2-). Stable borane structures with 3-fold symmetry (e.g., D(3)(h), C(3)(v), etc.) are not found for boranes with 8- and 11-vertices, in contrast to the corresponding germanium clusters where stable structures derived from the D(3)(d) bicapped octahedron and D(3)(h) pentacapped trigonal prism are found for the 8- and 11-vertex systems, respectively. The lowest energy structures found for the electron-rich boranes B(8)H(8)(4-) and B(11)H(11)(4-) are nido polyhedra derived from a closo deltahedron by removal of a relatively high degree vertex, as predicted by the Wade-Mingos rules. They relate to isoelectronic species found experimentally, e.g., B(8)H(12) and R(4)C(4)B(4)H(4) for B(8)H(8)(4-) and C(2)B(9)H(11)(2-) for B(11)H(11)(4-). Three structures were found for B(11)H(11)(6-) with arachno type geometry having two open faces in accord with the Wade-Mingos rules.     

Density functional theory study of 11-atom germanium clusters: effect of electron count on cluster geometry

Density functional theory (DFT) at the hybrid B3LYP level has been applied to the germanium clusters Ge(11)(z) (z = -6, -4, -2, 0, +2, +4, +6) starting from eight different initial configurations. The global minimum within the Ge(11)(2-) set is an elongated pentacapped trigonal prism distorted from D(3)(h) to C(2v) symmetry. However, the much more spherical edge-coalesced icosahedron, also of C(2v) symmetry, expected by the Wade-Mingos rules for a 2n + 2 skeletal electron system and found experimentally in B(11)H(11)(2-) and isoelectronic carboranes, is of only slightly higher energy (+5.2 kcal/mol). Even more elongated D(3)(h) pentacapped trigonal prisms are the global minima for the electron-rich structures Ge(11)(4-) and Ge(11)(6-). For Ge(11)(4-) the C(5v) 5-capped pentagonal antiprism analogous to the dicarbollide ligand C(2)B(9)H(11)(2-) is of significantly higher energy (approximately 28 kcal/mol) than the D(3h) global minimum. The C(2v) edge-coalesced icosahedron is also the global minimum for the electron-poor Ge(11) similar to its occurrence in experimentally known 11-vertex "isocloso" metallaboranes of the type (eta(6)-arene)RuB(10)H(10). The lowest energy polyhedral structures computed for the more hypoelectronic Ge(11)(4+) and Ge(11)(6+) clusters are very similar to those found experimentally for the isoelectronic ions E(11)(7-) (E = Ga, In, Tl) and Tl(9)Au(2)(9-) in intermetallics in the case of Ge(11)(4+) and Ge(11)(6+), respectively. These DFT studies predict an interesting D(5h) centered pentagonal prismatic structure for Ge(11)(2+) and isoelectronic metal clusters.     

Features of germanium tetrafluoride reduction with hydrogen in inductively and capacitively coupled radiofrequency discharges

The process of plasma-chemical conversion of germanium tetrafluoride in a radiofrequency discharge (13.56 MHz) has been studied. The dependences of the germanium yield on the specific energy input, the H₂/GeF₄ molar ratio, and the total pressure have been measured. The maximum germanium yield is more than 95%. The minimum specific energy consumption at an energy input of 9 MJ/mol is 9.4 MJ/mol or 2.6 kW h/mol Ge. A mechanism of plasma-assisted reduction of germanium tetrafluoride under the given the experimental conditions has been proposed.     

A theoretical study on growth patterns of Ni-doped germanium clusters

Ni-doped germanium clusters have been systematically investigated by using the density functional approach. The growth-pattern behaviors, stabilities, charge transfer, and polarities of these clusters are discussed in detail. Obviously different growth patterns appear between small-sized Ni-doped germanium clusters and middle- or larger-sized Ni-doped germanium clusters. The Ni-convex or substituted Ge(n) frames for small-sized clusters as well as Ni-concaved or encapsulated Ge(n) frames for middle- or large-sized clusters are dominant growth patterns. The calculated fragmentation energies manifest that the magic numbers of stabilities are 5, 8, 10, and 13 for Ni-doped germanium clusters; the obtained relative stabilities exhibit that the Ni-encapsulated Ge(10) cluster is the most stable species of all different-sized clusters, which is in good agreement with available experimental observations of CoGe(10)(-). Natural population analysis shows that different charge-transfer phenomena depend on the sizes of the Ni-doped Ge(n) clusters. Additionally, the properties of frontier orbitals and the polarities of Ni-doped Ge(n) clusters are also discussed.     

Anodic stripping voltammetry of germanium at the hanging mercury drop electrode

The Ge(IV)—Ge(0) system was investigated by cyclic and stripping voltammetry at HMDE in acidic pyrogallol medium and in phosphate, borate and carbonate buffers. It was found that germanium electrodeposited from dilute Ge(IV) solutions dissolved anodically forming two peaks corresponding to the oxidation of the unstable homogeneous and stable heterogeneous amalgams. Both peaks can be exploited analytically for the determination of traces of germanium but due to the complex nature of the germanium amalgam the sensitivity and reproducibility of the determinations are lower compared to the results obtained for metals well-soluble in mercury.     

Vacancy ordering in SmGe2-x and GdGe2-x (x = 0.33): structure and properties of two Sm3Ge5 polymorphs and of Gd3Ge5

The crystal structures and the magnetic properties of three new binary rare-earth intermetallic phases are reported. alpha-Sm3Ge5 and beta-Sm3Ge5 and Gd3Ge5 have been prepared from the corresponding elements through high-temperature reactions using the flux-growth method. The structures of the three compounds have been established using single-crystal X-ray diffraction: alpha-Sm3Ge5 crystallizes with its own type in the hexagonal space group P2c (No. 190) with cell parameters a = 6.9238(11) A, c = 8.491(3) A, and Z = 2, whereas beta-Sm3Ge5 adopts the face-centered orthorhombic Y3Ge5 type with space group Fdd2 (No. 43) and with cell parameters a = 5.8281(6) A, b = 17.476(2) A, c = 13.785(2) A, and Z = 8. The orthorhombic Gd3Ge5 with cell parameters a = 5.784(2) A, b = 17.355(6) A, and c = 13.785(5) A is isostructural with beta-Sm3Ge5. The structures of the title compounds can be described as AlB(2) and alpha-ThSi2 derivatives with long-range ordering of the germanium vacancies. Temperature-dependent DC magnetization (5-300 K) measurements show evidence of antiferromagnetic ordering below ca. 30 and 10 K for alpha-Sm3Ge5 and beta-Sm3Ge5, respectively. Gd3Ge5 undergoes two successive magnetic transitions below ca. 15 and 11 K. The temperature dependence of the resistivity and heat capacity of Gd3Ge5 are discussed as well.     

Density Functional Theory Calculations Revealing Metal‐like Band Structures for Ultrathin Germanium (111) and (211) Surface Layers

To find out if germanium possesses facet‐dependent electrical‐conductivity properties, surface‐state density functional theory (DFT) calculations were performed on one to six layers of germanium (100), (110), (111), and (211) planes. Tunable Ge(100) and Ge(110) planes always present the same semiconducting band structure with a band gap of 0.67 eV expected of bulk germanium. In contrast, one, two, four, and five layers of Ge(111) and Ge(211) plane models show metal‐like band structures with continuous density of states (DOS) throughout the entire band. For three and six layers of Ge(111) and Ge(211) plane models, the normal semiconducting band structure was obtained. The plane layers with metal‐like band structures also show Ge−Ge bond‐length deviations and bond distortions, as well as significantly different 4s and 4p frontier‐orbital electron counts and relative percentages integrated over the valence and conduction bands from those of the semiconducting state. These differences should contribute to strikingly dissimilar band structures. The calculation results suggest the observation of facet‐dependent electrical‐conductivity properties of germanium materials; when making transistors from germanium, the facet effects with shrinking dimensions approaching 3 nm may also need to be considered.