Reciprocal system 3Tl2S + Bi2Se3 ↔ 3Tl2Se + Bi2S3

The reciprocal system 3Tl₂S + Bi₂Se₃ ? 3Tl₂Se + Bi₂S₃ has been investigated by DTA, X-ray powder diffraction analysis, and emf measurements. Some polythermal sections and the isothermal section at 500 K of the phase diagram and the projection of the liquidus surface of this system have been constructed, and the types and coordinates of the invariant and univariant equilibria have been determined. The existence of wide regions of quaternary solid solutions based on the binary compounds Tl₂S, Tl₂Se, Bi₂S₃, and Bi₂Se₃, and solid solutions between the temary compounds TlBiS₂ and TlBiSe₂ have been established.     

UCNP–Bi2Se3 Upconverting Nanohybrid for Upconversion Luminescence and CT Imaging and Photothermal Therapy

Non-invasive theranostics that integrate the advantages of multimodality imaging and therapeutics have great potential in the field of biomedicine. Herein, a new nanohybrid based on Bi₂Se₃-conjugated upconversion nanoparticles (UCNPs) has been successfully developed through a simple in situ growth strategy. Under 808 nm near-infrared laser irradiation, the UCNPs can emit bright visible light, whereas the Bi₂Se₃ nanomaterial exhibits efficient photothermal conversion capacity. Moreover, the as-synthesized UCNP–Bi₂Se₃ nanohybrid exhibits efficient cell upconversion luminescence (UCL), reasonable CT imaging, and admirable cancer cell ablation capacity, further emphasizing the efficiency of this strategy for simultaneous UCL imaging and photothermal therapy. The designed theranostic strategy guided by dual-modal imaging endowed with real-time dynamic monitoring, remote controllability, and non-invasiveness makes the UCNP–Bi₂Se₃ nanohybrid an ideal candidate for non-invasive multimodal imaging-guided photothermal therapy for the precise diagnosis and treatment of cancer.     

Thermochemische Untersuchungen zum System Bi/Se/O. I. Das Phasendreieck Bi2Se3/Bi2O2Se/Se

Thermochemical Investigation on the System Bi/Se/O. I The Phase Triangle Bi₂Se₃/Bi₂O₂Se/Se By total pressure measurements of compositions in the subsystem Bi₂Se₃/Bi₂O₂Se/Se was shown, that in thermodynamic equilibrium the three phases Bi₂Se₃/Bi₂O₂Se/Se coexist. The barogram of the triangle reduces to the barogram of the line Bi₂Se₃? Se, the compound Bi₂O₂Se is not from influence of the total pressure in the investigated temperature range.     

Phase Equilibrium in the SeO2–Bi2O3 System

The subject of the present study is the system SeO₂-Bi₂O₃ that comprises two oxides with low melting points. All batches are thermal treatment in quartz ampoules, which are evacuated and sealed at a pressure P=0.1 Pa. On the basis of DTA (differential thermal analysis) and X-ray data, the most probable liquidus line of the system has been plotted. The eutectic composition lies about 90 mol% SeO₂,with on eutectic temperature at 230°C. Above 20 mol% Bi₂O₃ the liquidus temperature extremely increases. The formation of three compounds is proved:Bi₂Se₃O₉ and Bi₂Se₄O₁₁ are melting incongruently at 540 and 350°C respectively and Bi₂SeO₅ congruently at 915°C. This revised version was published online in July 2006 with corrections to the Cover Date.     

Zustandsbarogramme — Zustandsdiagramme durch Gesamtdruckmessungen

From phasebarograms it is possible to construct phase diagrams. We show on example of the system Bi/Se/O how follow ternary sections from the total pressure measurements in equilibrium and how we can attribute the barogram of the ternary region Bi₂Se₃/Bi₂O₂Se/Se to the binary system Bi₂Se₃/Se. The knowledge of the ternary system Bi/Se/I and its coexistent pressure courses allow to followT-p-x conditions for the chemical transport of phases from this system.

     

Phase equilibria in the PbSe-Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript>-Se system and thermodynamic properties of intermediate phases

The Pb-Bi-Se system in the PbSe-Bi₂Se₃-Se-Se composition region was studied by measurement of concentration circuits of the type (−) PbSe(solid) liquid electrolyte, Pb²⁺(Pb-Bi-Se)(solid) (+) in the temperature range 300–430 K and by X-ray powder diffraction. A solid-phase equilibrium diagram was constructed, and the formation was confirmed for the ternary compounds Pb₅Bi₆Se₁₄, Pb₅Bi₁₂Se₂₃, and Pb₅Bi₁₈Se₃₂, which belong to the homologous series [(PbSe)₅] _m · [(Bi₂Se₃)₃] _n . From the emf versus temperature equations, the partial thermodynamic functions [`(DG)]\overline {\Delta G}, [`(DH)]\overline {\Delta H}, [`(DS)]\overline {\Delta S} of PbSe in alloys were calculated. Based on the solid-phase equilibrium diagram from these partial molar quantities using the corresponding data for PbSe and Bi₂Se₃, the standard thermodynamic functions of formation and standard entropies of the above ternary compounds were calculated.     

Synchrotron-radiation photoemission study of the V–VI layered compounds Bi2Te3, Bi2Se3, Sb2 Te3 and Sb2Te2Se

The valence band (VB) density of states and the binding energies of the weakly bound core levels have been measured by XUV photoelectron spectroscopy using synchrotron radiation for four V–VI layered compounds. Chemical shifts of the core levels are determined which support the partial ionicity of the bonds involved. The chemical shifts of the emission from two unequivalent crystal sites were shown to differ by less than 30 meV for the compounds Bi₂Te₃, Bi₂Se₃ and Sb₂Te₃.VB and core-level photoemission spectra for the V–VI compounds Bi₂Te₃, Bi₂Se₃, Sb₂Te₃ and Se₂Te₂Se have been presented. Chemical shifts of the Te 4d, Bi 5d, Sb 4d and Se 3d levels were determined, indicating partial ionicity of the mainly covalent bonds involved. Chemical-shift differences originating from atoms at two different crystal sites are <30 meV. In a simple model this implies that similar charge transfers do occur even though completely different bond orbitals were proposed for the and the AB⁽²⁾ bonds. Finally, the fact that no surface core-level shifts were observed tends to confirm the very weak influence of the van der Waals-like bonds on the B⁽²⁾ atoms.     

Synthesis of Bi2Se3 thermoelectric nanosheets and nanotubes through hydrothermal co-reduction method

Bi₂Se₃ nanosheets and nanotubes were prepared by a hydrothermal co-reduction method at 150, 180, 200, and 210 °C. Bi₂Se₃ nanosheets, nanobelts and nanotubes were obtained. The Bi₂Se₃ nanoflakes are 50-500 nm in width and 2-5 nm in thickness. The Bi₂Se₃ nanotubes are 5-10 nm in diameter, 80-120 nm in length, and 1.3 nm in wall thickness. X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, and electron diffraction were employed to characterize the products. Experimental results showed that the nanosheets and the nanotubes are hexagonal in structure with a=4.1354 Å and c=27.4615 Å. A possible formation and crystal growth mechanism of Bi₂Se₃ nanostructures is proposed.     

Electronic structure,optical properties and Compton profiles of Bi2S3 and Bi2Se3

In this paper, we present the Compton profiles of Bi₂S₃ and Bi₂Se₃ using our 20 Ci ¹³⁷Cs Compton spectrometer. To compare our experimental data, we have computed the Compton profiles, energy bands and density of states using linear combination of atomic orbitals with density functional theory (DFT) and Hartree-Fock (HF) scheme. It is seen that hybrid functional involving HF and DFT approximations gives a relatively better agreement with experimental momentum densities than other approximations of DFT. We have also reported the band structure, density of states, valence charge densities, dielectric functions and electron energy loss spectra using full potential linearized augmented plane wave scheme. On the basis of charge densities, Mulliken’s population data and equal-valence-electron-density profiles, Bi₂S₃ is found to be more ionic than Bi₂Se₃. The calculated dielectric functions for the parallel and perpendicular polarizations show a small anisotropic effect. The electron energy loss spectrum for Bi₂Se₃ is found to be in good agreement with the available experimental data.     

微波加热制备空心和锯齿形貌Bi_2Te_3晶体(英文)

Well-crystallized Bi₂Te₃ hollow spheres and nanosaws were prepared by microwave heating. Both the ionic liquid and the microwave heating play important role in the formation of the above nanostructures. Hollow spheres can not be obtained only by electronic stove heating, while the addition of ionic liquid leads to fast preparation of nanosaws structure under microwave heating conditions. The similar experimental results have been observed in the preparation of Bi₂S₃, Sb₂S₃ and Bi₂Se₃ nanostructures.     

Untersuchungen zum quasibinären System Bi2Se3/BiI3

Investigations on the Pseudobinary System Bi₂Se₃/BiI₃ The phase diagram of the pseudobinary system Bi₂Se₃/BiI₃ was investigated by DTA, total pressure measurements and x-ray phase analysis. Only BiSeI exist as a ternary phase in this system. The compound melts incongruently at 545 °C. Heat of formation and standard entropy were calculated from vapor pressure data.ΔH_B° (BiSeI, f, 298) = (–23.4 ± 1.9) kcal/mol S°(BiSeI, f, 298) = (38.7 ± 3.5) cal/K · mol     

拓扑绝缘体二维纳米结构与器件

拓扑绝缘体是一种全新的量子功能材料, 具有绝缘性体能带结构和受时间反演对称性保护的自旋分辨的金属表面态, 属于Dirac 粒子系统, 将在新原理纳电子器件、自旋器件、量子计算、表面催化和清洁能源等方面有广泛的应用前景. 理论和实验相继证实Sb₂Te₃, Bi₂Se₃和Bi₂Te₃单晶具有较大的体能隙和单一Dirac 锥表面态, 已经迅速成为了拓扑绝缘体研究中的热点材料. 然而, 利用传统的高温烧结法所制成的拓扑绝缘体单晶块体样品常存在大量本征缺陷并被严重掺杂, 拓扑表面态的新奇性质很容易被体载流子掩盖. 拓扑绝缘体二维纳米结构具有超高比表面积和能带结构的可调控性, 能显著降低体态载流子的比例和凸显拓扑表面态, 并易于制备高结晶质量的单晶样品, 各种低维异质结构以及平面器件. 近年来, 我们一直致力于发展拓扑绝缘体二维纳米结构的控制生长方法和物性研究. 我们发展了拓扑绝缘体二维纳米结构的范德华外延方法, 实现了高质量大比表面积的拓扑绝缘体二维纳米结构的可控制备, 并实现了定点与定向的表面生长. 开展拓扑绝缘体二维纳米结构的谱学研究, 利用角分辨光电子能谱直接观察到拓扑绝缘体狄拉克锥形的表面电子能带结构, 发现了拉曼强度与位移随层数的依赖关系. 设计并构建拓扑绝缘体纳米结构器件, 系统研究其新奇物性, 观测到拓扑绝缘体Bi₂Se₃表面态的Aharonov-Bohm (AB)量子干涉效应等新奇量子现象, 通过栅电压实现了拓扑绝缘体纳米薄片化学势的调控, 并将拓扑绝缘体纳米结构应用于柔性透明导电薄膜. 本文首先简单介绍拓扑绝缘体的发展现状, 然后系统介绍我们开展的拓扑绝缘体二维纳米结构的范德华外延生长、谱学、电学输运特性以及透明柔性导电薄膜应用的研究, 最后对该领域所面临的机遇和挑战进行简要的展望.     

Selen‐Polykationen stabilisiert durch polymere Chlorobismutat‐Anionen: Synthesen und Kristallstrukturen von Se4[Bi4Cl14] und Se10[Bi5Cl17]

Selenium Polycations Stabilized by Polymeric Chlorobismuthate Anions: Syntheses and Crystal Structures of Se₄[Bi₄Cl₁₄] and Se₁₀[Bi₅Cl₁₇] Reactions of selenium with selenium(IV) chloride and bismuth(III) chloride in sealed evacuated glass ampoules at temperatures between 110 and 155 °C yield a series of compounds which are composed of discrete selenium polycations and polymeric chlorobismutate anions. Besides the already known Se₈[Bi₄Cl₁₄] two new compounds have been identified by crystal structure analyses as Se₄[Bi₄Cl₁₄] (tetragonal, P4/n, a = 1089.1(2) pm, c = 993.7(2) pm, Z = 2) and Se₁₀[Bi₅Cl₁₇] (monoclinic, P2₁/c, a = 1079.24(8) pm, b = 2062.9(2) pm, c = 1676.1(2) pm, β = 90.87(1)°, Z = 4). Se₄[Bi₄Cl₁₄] was obtained as red transparent platelike crystals and is the first example of a compound with (chalcogen₄)²⁺ ions of exact square‐planar symmetry and molecular point group D_4h in the solid state. The cations are surrounded by layers of two‐dimensional polymeric anions [Bi₄Cl₁₄]^2–. Se₁₀[Bi₅Cl₁₇] forms dark grey crystals with a reddish luster. The structure contains the known bicyclic polycation Se₁₀²⁺ which is disordered over two positions and the first three‐dimensional polymeric chlorobismutate anion [Bi₅Cl₁₇]^2–. The different BiCl_x polyhedra are linked by sharing common vertices, edges, and faces.     

Conversion Reactions of Solids: From a Surprising Three‐Step Mechanism towards Directed Product Formation

Directed conversion reactions from binary to multinary compounds are discovered from the reaction of Bi₂S₃ and Bi₂Se₃ with NiCl₂ ? 6 H₂O in polyol media under basic conditions. Control of the synthesis conditions allows the preparation of NiBiSe and superconducting Ni₃Bi₂S₂ and Ni₃Bi₂Se₂. The formation of Ni₃Bi₂S₂ from Bi₂S₃ is found from an unexpected three‐step reaction path with Bi and NiBi as intermediates. In the more complex Ni/Bi/Se system, the mechanism found can be used to selectively direct the reaction between the competing ternaries and to suppress side‐product formation. Contrary to solid‐state reactions (500–900 °C) control of product formation is reached at reaction temperatures and times between 166–300 °C and 0.5–10 h, respectively. The formation of different phases is discussed from results of DFT calculations.     

Highly sensitive,humidity-tolerant and flexible NO2 sensors based on nanoplate Bi2Se3 film

Recently, two-dimension (2D) materials have fueled considerable interest in the field of gas sensing to cope urgent demands at specific scenarios. Unfortunately, the susceptibility to ambient humidity, and/or fragile operation stability always frustrate their further practicability. To overcome these drawbacks, we proposed one novel flexible gas sensor based on bismuth selenide (Bi₂Se₃) nanoplates for sensitive NO₂ detection at room temperature. The as-prepared Bi₂Se₃ sensor exhibited favorable sensing performance, including remarkable NO₂ selectivity, high response of 120% and fast response time of 81 s toward 5 ppm NO₂, an ultralow detection limit of 100 ppb, and nice stability. Besides, the excellent humidity tolerance and mechanical flexibility endowed Bi₂Se₃ sensors with admirable reliability under harsh working conditions. The first-principles calculation further revealed the insights of extraordinary NO₂ selectivity and the underlying gas-sensing mechanism.     

The Bicyclic Polyselenium Cation Se102+ in the Structure of Se10[Bi4Cl14]

In the ternary system Se/Bi/Cl a new polycation containing phase besides the already known Se₄[Bi₄Cl₁₄], Se₈[Bi₄Cl₁₄], and Se₁₀[Bi₅Cl₁₇] was discovered. Red, transparent, plate shaped crystals of Se₁₀[Bi₄Cl₁₄] were formed by reaction of Se/SeCl₄/BiCl₃ in 15:1:8 molar ratio in evacuated glass ampoules applying a temperature gradient from 90 to 80 °C. The crystal structure consists of bicyclic Se₁₀²⁺ cations and of layered chloridobismutate anions with the cations located between the anionic planes. The atoms of the cation form a six membered ring with a Se₄ chain bridging over the 1,4 positions of the Se₆ ring. The anions are made up of BiCl₇ polyhedra connected by common edges to layers all contain an anion of identical formula and two‐dimensional connectivity, but these polymeric chloridobismutates are not isostructural. The structural differences are discussed on basis of the different topologies of the nets made up by the bismuth atoms.     

Synthese und Kristallstrukturen der quaternären Chalkogenidchloride AgBi2S3Cl und AgBi2Se3Cl

Synthesis and Crystal Structures of the Quaternary Chalcogenide Chlorides AgBi₂S₃Cl and AgBi₂Se₃Cl Grey crystals of AgBi₂S₃Cl and AgBi₂Se₃Cl were synthesized from AgCl and Bi₂S₃ or Bi₂Se₃by cooling stoichiometric melts from 790 K to room temperature. X‐ray diffraction on powders and single‐crystals revealed that the compounds crystallize isostructural with space group type P 2₁/m. In the crystal structure of AgBi₂S₃Cl the bismuth(III) cations have a capped trigonal prismatic coordination of sulfide and chloride ions. The prisms constitute a three‐dimensional framework by sharing common edges and faces. Silver(I) cations, which have a distorted octahedral coordination of sulfide ions, fill linear channels. Parallels to the crystal structures of Cu₃Bi₂S₄Cl and Pr₂Br₅ can be seen.     

Thermoelectric properties of Ag-doped n-type (Bi2Te3)0.9-(Bi2−xAgxSe3)0.1 (x=0-0.4) alloys prepared by spark plasma sintering

Ag-doped n-type (Bi₂Te₃)_0.9-(Bi_2−xAg_xSe₃)_0.1 (x=0-0.4) alloys were prepared by spark plasma sintering and their physical properties evaluated. When at low Ag content (x=0.05), the temperature dependence of the lattice thermal conductivity follows the trend of (Bi₂Te₃)_0.9-(Bi₂Se₃)_0.1; while at higher Ag content, a relatively rapid reduction above 400 K can be observed due possibly to the enhancement of scattering of phonons by the increased defects. The Seebeck coefficient increases with Ag content, with some loss of electrical conductivity, but the maximum dimensionless figure of merit ZT can be obtained to be 0.86 for the alloy with x=0.4 at 505 K, about 0.2 higher than that of the alloy (Bi₂Te₃)_0.9-(Bi₂Se₃)_0.1 without Ag-doping.     

Synthesis and characterization of quaternary chalcogenides InSn2Bi3Se8 and In0.2Sn6Bi1.8Se9

Quaternary chalcogenides InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ were synthesized on direct combination of their elements in stoichiometric ratios at T>800 °C under vacuum. Their structures were determined with X-ray diffraction of single crystals. InSn₂Bi₃Se₈ crystallizes in monoclinic space group C2/m (No. 12) with a=13.557(3) Å, b=4.1299(8) Å, c=15.252(3) Å, β=115.73(3)°, V=769.3(3) Å³, Z=2, and R₁/wR₂/GOF=0.0206/0.0497/1.092; In_0.2Sn₆Bi_1.8Se₉ crystallizes in orthorhombic space group Cmc2₁ (No. 36) with a=4.1810(8) Å, b=13.799(3) Å, c=31.953(6) Å, V=1843.4(6) Å³, Z=4, and R₁/wR₂/GOF=0.0966/0.2327/1.12. InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ are isostructural with CuBi₅S₈ and Bi₂Pb₆S₉ phases, respectively. The structures of InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ feature a three-dimensional framework containing slabs of NaCl-(311) type with varied thicknesses. Calculations of the electronic structure and measurements of electrical conductivity indicate that these materials are semiconductors with narrow band gaps. Both compounds show n-type semiconducting properties with Seebeck coefficients −270 and −230 μV/K at 300 K for InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉, respectively.     

Screw‐Dislocation‐Driven Bidirectional Spiral Growth of Bi2Se3 Nanoplates

Bi₂Se₃ attracts intensive attention as a typical thermoelectric material and a promising topological insulator material. However, previously reported Bi₂Se₃ nanostructures are limited to nanoribbons and smooth nanoplates. Herein, we report the synthesis of spiral Bi₂Se₃ nanoplates and their screw‐dislocation‐driven (SDD) bidirectional growth process. Typical products showed a bipyramid‐like shape with two sets of centrosymmetric helical fringes on the top and bottom faces. Other evidence for the unique structure and growth mode include herringbone contours, spiral arms, and hollow cores. Through the manipulation of kinetic factors, including the precursor concentration, the pH value, and the amount of reductant, we were able to tune the supersaturation in the regime of SDD to layer‐by‐layer growth. Nanoplates with preliminary dislocations were discovered in samples with an appropriate supersaturation value and employed for investigation of the SDD growth process.