Study of dielectric characteristics of graded Ba<Subscript>1−x</Subscript>Ca<Subscript>x</Subscript>Zr<Subscript>0.05</Subscript>Ti<Subscript>0.95</Subscript>O<Subscript>3</Subscript> thin films grown by a sol-gel process

The compositionally graded Ba_1−xCa_xZr_0.05Ti_0.95O₃ (x = 0, 0.05, 0.10) (BCZT) thin films with compositional gradient from BaZr_0.05Ti_0.95O₃ to Ba_0.90Ca_0.10Zr_0.05Ti_0.95O₃ were deposited on Pt/Ti/SiO₂/Si substrates by sol-gel processing. The crystal structure of the thin films was determined by X-ray diffraction. Field emission scanning electron microscopy (FESEM) was used to examine crystallite size and morphology of compositionally graded thin films. The dielectric properties of compositionally graded thin films were characterized by measuring the dielectric constant and dielectric loss as a function of temperature, applied electric field and frequency. As a result, compositionally graded thin films with weak temperature dependence were realized. Dielectric constant peaks, common to a ferroelectric transition, were not observed in the temperature range from 298 to 413 K. The compositionally graded BCZT thin films with weak temperature dependence of tunability could be attractive materials for frequency and phase agile tunable microwave components such as tunable filters, tunable oscillators, and phase shifters for application in phased array antennas.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Characteristics of Ag/Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript>/p-Si heterostructure prepared by sol-gel processing

The metal-ferroelectric-semiconductor (MFS) heterostructure has been fabricated using Bi_3.25La_0.75Ti₃O₁₂ (BLT) as a ferroelectric layer by sol-gel processing. The effect of annealing temperature on phase formation and electrical characteristics of Ag/BLT/p-Si heterostructure were investigated. The BLT thin films annealed at from 500°C to 650°C are polycrystalline, with no pyrochlore or other second phases. The C-V curves of Ag/BLT/p-Si heterostructure annealed at 600°C show a clockwise C-V ferroelectric hysteresis loops and obtain good electrical properties with low current density of below 2×10⁻⁸ A/cm² within ±4 V, a memory window of over 0.7 V for a thickness of 400 nm BLT films. The memory window enlarges and the current density reduces with the increase of annealing temperature, but a annealing temperature over 600°C is disadvantageous for good electrical properties.     

Characterization of CuInS2 Thin Films with Different Cu/In Ratio

Thin films of CuInS₂ were grown on glass substrate by successive ionic layer adsorption and reaction method with different [Cu]/[In] ratios and annealed at 400 °C for 30 min. The crystal structure and grain sizes of the thin films were characterized by X-ray diffraction method. Atomic force microscopy was used to determine surface morphology of the films. Optical and electrical properties of these films were investigated as a function of [Cu]/[In]ratios. The electrical resistivity of CuInS₂ of thin films was determined using a direct current-two probe method in the temperature range of 300—470 K. It is observed that, the electrical resistivity values show a big decreasing with increasing [Cu]/[In] ratio. Hence, the [Cu]/[In] ratio in the solution can drastically affect the structural, electrical, and optical properties of thin films of CuInS₂.     

Study on the Superhydrophilicity of the SiO2-TiO2 Thin Films Prepared by Sol-Gel Method at Room Temperature

Nanoscale SiO₂-TiO₂ composite thin films with the thickness of about 100 nm were prepared by sol-gel method at room temperature in air. The chemical states of the elements on the surface and near the surface were measured by XPS. The results showed that the Ti on/near the surface of the thin films existed not only as TiO₂ but also as Ti₂O₃. Part of the TiO₂ was changed to Ti₂O₃ after UV irradiation. The crystalline structure of the TiO₂ in the SiO₂-TiO₂ thin films was anatase with the crystallite size of 14–20 nm. It was found that the thin film prepared at room temperature in air has good superhydrophilic property and has strong adherence to the substrate.     

Influence of the process parameters on the structural and electric properties of ferroelectric and antiferroelectric PZT thin films realized on stainless steel by a Sol–gel derived method

Pb _x Zr_yTi_1−yO₃ thin films were prepared by a modified Sol–gel method using alkoxides precursor compounds and spin-coating onto RuO₂ coated stainless steel substrates. Depending on the zirconate/titanate ratio, both, ferroelectric and antiferroelectric behaviour has been obtained. Oxidation of the metal substrate due to the PZT crystallization process was studied in order to verify the influence of the heat treatment on the substrate morphology. In order to improve the properties of antiferroelectric Pb _x Zr_0.95Ti_0.05O₃, the influence of the lead excess in the composition was investigated. Thefs dependence of the switching field distribution from the annealing time and temperature, as well as the fatigue behaviour of the films, is discussed.     

La2Ti6O15-CeTi21O38-PbTiO3 ceramics formed in gaseous penetration of La-Ce into PbTiO3 and their electric properties

The gaseous penetration of La-Ce into PbTiO₃ ceramics is reported. The compounds of La₂Ti₆O₁₅ and CeTi₂₁O₃₈ are formed and the new La₂Ti₆O₁₅-CeTi₂₁O₃₈-PbTiO₃ ceramics are prepared by the penetration of La and Ce in the gaseous state. The new ceramic materials have a significant change in electric properties. The room temperature resistivity decreases from 2.0×10¹⁰ to 0.248 Ω. m, and the grain resistance exhibits an obvious PTCR effect with the change of temperature. However, the grain boundary resistance decreases rapidly with increase in temperature. The change rule of the total resistance is similar to that of the grain boundary, and the PTCR effect disappears and the tendency of transition to a conductive body is manifest. The XPS analysis suggests that the particles that are Pb, Ti, La and Ce in La₂Ti₆O₁₅-CeTi₂₁O₃₈-PbTiO₃ ceramics all change their valence and lead to decreasing resistivity, and the bound energy peak values of elements in La₂Ti₆O₁₅-CeTi₂₁O₃₈-PbTiO₃ ceramics are also reported. The La₂Ti₆O₁₅-CeTi₂₁O₃₈-PbTiO₃ ceramics have a better thermal stability in high temperatures through TG-DTA analysis.     

Bi4Ti3O12 Thin Films from Mixed Bismuth-Titanium Alkoxides

Bi₄Ti₃O₁₂ thin films were obtained by the sol-gel method. The precursor solution was prepared by allowing the two metallic alkoxides, Bi(OC₂H₄OCH₃)₃ and Ti(OC₂H₄OCH₃)₄, to react in 2-methoxy-ethanol to form the mixed alkoxide. This stable sol was deposited by spin-coating onto platinized silicon substrates. X-Ray diffraction patterns indicate that the perovskite initial crystallization temperature is 460°C for powder samples and it ranges between 400 and 500°C, for thin films, as a function of the number of coating layers. Dense, smooth and crack free thin films with grain sizes ranging from 20 nm to 500 nm are obtained, depending on the number of coating layers and on the post-deposition temperature annealing.     

Effect of surface modification on the properties of plasma-polymerized hexamethyldisiloxane thin films

Plasma-polymerized hexamethyldisiloxane (pp-HMDSO) thin films have been deposited in a radiofrequency (RF) remote plasma-enhanced chemical vapor deposition (PECVD) system, on different types of substrates: silicon wafers, glass, quartz crystals, and chemiresistor structure. The as-grown thin films have been post treated in two types of reactive plasmas produced in SF₆ and O₂ gases. The effect of this surface modification on different properties of the as-grown pp-HMDSO thin film (chemical structure, elemental composition, surface morphology, film density and thickness, optical bandgap, and electrical resistivity) has been investigated. It is found that SF₆ plasma and O₂ plasma surface modifications of the as-grown pp-HMDSO thin film induce property changes different from each other. SF₆ plasma converted the as-grown pp-HMDSO film to a more porous material and caused a narrowing of its optical band gap of about 33%, while O₂ plasma induced a lowering of film electrical resistivity of about two orders of magnitude.     

Ultraviolet-Laser-Induced Crystallization of Sol-Gel Derived Inorganic Oxide Films

Structural changes stimulated by ultraviolet (UV) laser irradiations of sol-gel derived inorganic oxide films were investigated. Dried gel films of TiO₂, Nb₂O₅, Ta₂O₅, SrTiO₃ and Pb(Zr _x Ti_1–x )O₃ (PZT) were found to be crystallized by the laser irradiation. On the other hand, the photo-induced change in gel films of BaTiO₃, LiNbO₃ and LiTaO₃ was not observed although the laser beams were absorbed in the films. These sol-gel films were thermally crystallized at almost the same temperature around 600–700°C except TiO₂. Thus, the UV-laser-induced crystallization is not directly ascribed to a simple thermal effect with the irradiation. Photochemical properties of the cations are assumed to be important for the change in sol-gel films.     

Aerosol-Gel Deposition of Optically Active Thin Films in the System Y2Ti2O7-Er2Ti2O7

Optically active thin films in the system Y₂Ti₂O₇-Er₂Ti₂O₇ (YETO) have been deposited using the Aerosol-gel process. Depending on the heat-treatment temperature, amorphous or crystalline films could be prepared in the range 600–950°C. The study shows that dilution of erbium ions within a Y₂Ti₂O₇ (YTO) matrix allows to prevent short range distance interactions between those ions and to promote good photoluminescence properties of YETO films. These properties are discussed and compared with those of sol-gel derived silica films doped with erbium.     

Investigation of opto-dielectric properties of Ti-doped Ga2O3 thin films

Several Ti-incorporated Ga-oxide (Ga₂O₃) thin films with different amounts of Ti contents have been prepared by vacuum evaporation method on glass and silicon substrates. The Ti incorporation level was measured with energy dispersion X-ray spectroscopy (EDX) method. The crystalline structure of the prepared films was determined with X-ray diffraction method. Experimental data indicate that Ti⁴⁺ ions doped in host Ga₂O₃ form solid solutions (SS) even with so large Ti% content ∼10.4% wt. All the prepared solid solutions have the known orthorhombic (ɛ-phase) phase of Ga₂O₃. The doping controls the optical and electrical properties of the host Ga₂O₃. It was found that the bandgap of the prepared undoped Ga oxide is 5.23 eV, which was decreased monotonically with increasing of Ti doping level so that it is possible to engineer the bandgap. Furthermore, the electrical measurements show that with Ti doping, it is possible to turn the high-k Ga oxide into low-k dielectric material. The optical sensitivity of the capacitance, dissipation factor, and ac-conductance of the Ga₂O₃:Ti films grown on Si was studied as a function of Ti-doping level. It was observed that the prepared Ga₂O₃:Ti film with 6–10% doping level has the highest photosensitivity among the other samples.     

Hyphenated thermal analysis for in situ study of (Bi,Nd)<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> formation from aqueous solution–gel synthesis

High-temperature X-ray diffraction, absorption–reflection infrared spectrometry and thermal analysis coupled on-line to mass spectrometry, were applied to citratoperoxo precursor gels and films of (Bi,Nd)₄Ti₃O₁₂ (BNdT). A slow heating rate resulted in secondary phases (Bi₂Ti₂O₇ and Bi₂O₃) while a high rate yielded phase pure layered perovskite BNdT. Comparison of the evolved gas profiles from the bulk gel and thin film, showed complete decomposition of the film at lower temperature than expected from thermogravimetric and evolved gas analysis of the bulk gel. Thermal methods adapted to thin films, therefore are crucial for understanding and controlling the oxide formation in the film.     

Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

Pb_0.4Sr_0.6TiO₃ (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2<x<0.4, the PST/Bi₂Ti₂O₇ biphase were obtained. The thin films with pure Bi₂Ti₂O₇ pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi₂Ti₂O₇ biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase.     

Semiconductor-metal transition in Ti3O5

Ti₃O₅ shows a first-order phase transition from the monoclinic structure to the pseudobrookite structure at 448°K, at which temperature a magnetic susceptibility anomaly has been reported earlier in the literature. There is an electrical conductivity discontinuity accompanying the phase transition. Incorporation of Fe stabilizes the high-temperature phase of Ti₃O₅; while with 2% Fe the transition temperature and enthalpy change are lowered, with 5% Fe there is no transition. Mössbauer spectra of 2% Fe-doped Ti₃O₅ are similar below and above the transition temperature and show no evidence for magnetic ordering in the low-temperature phase. These results are compared to the VO₂ transition.     

Fabrication and properties of xBiFeO3-(1 − x)Bi4Ti3O12 system by sol–gel process

The thin films of mixture of xBiFeO₃-(1 − x)Bi₄Ti₃O₁₂ (x = 0.4, 0.5, and 0.6) system were prepared by a sol–gel process. The thicknesses of the thin films were 540, 500, and 570 nm, respectively. The crystal structure of all thin films annealed at 650 °C was analyzed by X-ray diffraction. It was found that the thin films at x = 0.4 and 0.5 mainly consisted of a Bi₄Ti₃O₁₂ phase while Bi₅Ti₃FeO₁₅ was the major phase of the thin film at x = 0.6. The thin film (x = 0.6) showed better ferroelectric properties in remnant polarization and polarization fatigue than those observed in the thin films (x = 0.4 and 0.5). The values of remnant polarization 2P _r and coercive field 2E c of the thin film at x = 0.6 were 36 μC/cm² and 192 kV/cm at an applied electric field of 260 kV/cm, respectively. There was almost no polarization fatigue up to 10¹⁰ switching cycles. Also weak ferromagnetism was observed in the thin film at x = 0.6.     

Effect of sintering temperature on the structural, optical and electrical properties of sol–gel derived indium oxide thin films

Sol gel derived indium oxide, In₂O₃; films were prepared by spin coating technique. The films were dried and sintered at different sintering temperatures (300, 400, 450 and 500 °C) in air. The effect of sintering temperature on the structural, optical and electrical properties of In₂O₃ thin films was studied. The morphology and structure of the films were analyzed by scanning electron microscope and X-ray diffraction. The films showed a bcc structure that changes its 400-preferential orientation to 222 orientation as the sintering temperature increases from 300 to 500 °C. The optical behavior of the films was studied by measuring the transmission spectra in the wavelength range 200–2,500 nm. Different optical models have been proposed for fitting the transmittance data and simulate the optical constants as well as the film thickness of In₂O₃ films. The best fitting of the data was obtained by combining the classical Drude and OJL models coupled with the Bruggeman effective medium approximation. The optical parameters of Drude model (plasma frequency and damping constant) are used calculate the electrical properties of the films. The calculated values of the electrical sheet resistance were compared with those measured experimentally by four probes. The correlation between the film orientation change and its optical and electrical properties was discussed.     

室温下制备以{211}晶面为主的Ti1-xVxO2薄膜及其可见光催化性能

以金属Ti和V作为靶材,采用直流反应共溅射技术在室温下制备了以{211}晶面为主的锐钛矿相Ti_1-xV_xO₂薄膜,研究了不同V靶功率对Ti_1-xV_xO₂薄膜的薄膜成分、晶相结构和可见光催化性能的影响。研究表明,Ti_1-xV_xO₂薄膜的晶相结构为锐钛矿相,择优取向为(211),而结晶度受V靶功率的影响。随着V靶功率的增加,薄膜中V元素含量逐渐增加,同时,晶粒和沉积速率也逐渐增加。另外,当V靶功率为150 W时,薄膜的表面粗糙度值有一个最大值。V的掺杂导致薄膜的能带间隙变窄,对光的吸收向可见光区偏移,从而有效地改善了薄膜的可见光催化能力。当V靶功率为150 W时,Ti_1-xV_xO₂薄膜的能带间隙值为 2.82 eV,其在2 h的可见光照射下分解了80%的RhB染料。这被归结于能带间隙窄,高能晶面{211}和结晶度高的共同作用。     

室温下制备以{211}晶面为主的Ti1-xVxO2薄膜及其可见光催化性能

以金属Ti和V作为靶材,采用直流反应共溅射技术在室温下制备了以{211}晶面为主的锐钛矿相Ti_1-xV_xO₂薄膜,研究了不同V靶功率对Ti_1-xV_xO₂薄膜的薄膜成分、晶相结构和可见光催化性能的影响。研究表明,Ti_1-xV_xO₂薄膜的晶相结构为锐钛矿相,择优取向为(211),而结晶度受V靶功率的影响。随着V靶功率的增加,薄膜中V元素含量逐渐增加,同时,晶粒和沉积速率也逐渐增加。另外,当V靶功率为150W时,薄膜的表面粗糙度值有一个最大值。V的掺杂导致薄膜的能带间隙变窄,对光的吸收向可见光区偏移,从而有效地改善了薄膜的可见光催化能力。当V靶功率为150W时,Ti_1-xV_xO₂薄膜的能带间隙值为2.82eV,其在2h的可见光照射下分解了80%的RhB染料。这被归结于能带间隙窄,高能晶面{211}和结晶度高的共同作用。     

Enhanced dielectric properties of LSCO-buffered Ba(Sn<Subscript>0.05</Subscript>Ti<Subscript>0.95</Subscript>)O<Subscript>3</Subscript> thin film prepared by sol–gel processing

Ferroelectric Ba(Sn_0.05Ti_0.95)O₃ (BTS) thin films were deposited onto Pt/Ti/SiO₂/Si substrates by sol–gel technique with a 100 nm thick LSCO buffer layer. The influence of buffer layer on the phase and microstructure of the thin films was examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current (DC) electric field. The results show that the LSCO buffer layer had a marked effect on the dielectric properties of the BTS films. The BTS thin films with LSCO buffer layer had enhanced dielectric properties.