Is the band gap of pristine TiO(2) narrowed by anion- and cation-doping of titanium dioxide in second-generation photocatalysts?

Second-generation TiO(2)-(x)D(x) photocatalysts doped with either anions (N, C, and S mostly) or cations have recently been shown to have their absorption edge red-shifted to lower energies (longer wavelengths), thus enhancing photonic efficiencies of photoassisted surface redox reactions. Some of the studies have proposed that this red-shift is caused by a narrowing of the band gap of pristine TiO(2) (e.g., anatase, E(bg) = 3.2 eV; absorption edge ca. 387 nm), while others have suggested the appearance of intragap localized states of the dopants. By contrast, a recent study by Kuznetsov and Serpone (J. Phys. Chem. B, in press) has proposed that the commonality in all these doped titanias rests with formation of oxygen vacancies and the advent of color centers (e.g., F, F(+), F(++), and Ti(3+)) that absorb the visible light radiation. This article reexamines the various claims and argues that the red-shift of the absorption edge is in fact due to formation of the color centers, and that while band gap narrowing is not an unknown occurrence in semiconductor physics it does necessitate heavy doping of the metal oxide semiconductor, thereby producing materials that may have completely different chemical compositions from that of TiO(2) with totally different band gap electronic structures.     

Origin of improved visible photocatalytic activity of nitrogen/hydrogen codoped cubic In2O3: first-principles calculations

We have employed DFT calculations to carry out an accurate analysis of the effect of N- and NH-doping on the visible photocatalytic activity in the cubic In(2)O(3). In the substitutional N-doped In(2)O(3), the 2p impurity states of N induce a red shift in the optical absorption, while in the interstitial N-doping the red shift is dominantly caused by the localized π antibonding states of NO. When a H atom is accompanied by a N impurity in the lattice, the H atom acts as a charge donor and compensates the hole state created by N-doping, thus the energy level of the impurity states is reduced. As a result, the mixing of impurity states and the valence band is enhanced. At the same nitrogen dopant concentration, NH-codoping yields a larger band gap narrowing, especially for the interstitial NH-codoping. The theoretical calculations presented in this work explain well the previous experimental results of the enhanced visible photocatalytic activity in NH-codoped cubic In(2)O(3).     

Band gap engineering of bulk ZrO2 by Ti doping

It has been experimentally observed that Ti doping of bulk ZrO(2) induces a large red-shift of the optical absorption edge of the material from 5.3 to 4.0 eV [Livraghi et al., J. Phys. Chem. C, 2010, 114, 18553-18558]. In this work, density functional calculations based on the hybrid functional B3LYP show that Ti dopants in the substitutional position to Zr in the tetragonal lattice cause the formation of an empty Ti 3d band about 0.5 eV below the bottom of the conduction band. The optical transition level ε(opt)(0/-1) from the topmost valence state to the lowest empty Ti impurity state is found at 4.9 eV in a direct band gap of 5.7 eV. The calculated shift is consistent with the experimental observation. The presence of Ti(3+) species in Ti-doped ZrO(2), probed by means of electron paramagnetic resonance (EPR), is rationalized as the result of electron transfers from intrinsic defect states, such as oxygen vacancies, to substitutional Ti(4+) centers.     

Characterization of paramagnetic species in N-doped TiO2 powders by EPR spectroscopy and DFT calculations

Electron paramagnetic resonance (EPR), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations are combined for the first time in an effort to characterize the paramagnetic species present in N-doped anatase TiO2 powders obtained by sol-gel synthesis. The experimental hyperfine coupling constants are well reproduced by two structurally different nitrogen impurities: substitutional and interstitial N atoms in the TiO2 anatase matrix. DFT calculations show that the nitrogen impurities induce the formation of localized states in the band gap. Substitutional nitrogen states lie just above the valence band, while interstitial nitrogen states lie higher in the gap. Excitations from these localized states to the conduction band may account for the absorption edge shift toward lower energies (visible region) observed in the case of N-doped TiO2 with respect to pure TiO2 (UV region). Calculations also show that nitrogen doping leads to a substantial reduction of the energy cost to form oxygen vacancies in bulk TiO2. This suggests that nitrogen doping is likely to be accompanied by oxygen vacancy formation. Finally, we propose that the relative abundance of the two observed nitrogen-doping species depends on the preparation conditions, such as the oxygen concentration in the atmosphere and the annealing temperature during synthesis.     

N掺杂TiO_2光催化剂的微结构与吸光特性研究

以紫外可见漫反射光谱(UV-VIS-DRS)和X射线光电子能谱(XPS)分析和研究了四种方法制备的N掺杂TiO2光催化剂的结构,即水解法(N/TiO2-H)、氨热还原法(N/TiO2-A)、机械化学法(N/TiO2-M)和尿素热处理法(N/TiO2-T)等.结果表明,N/TiO2-H和N/TiO2-T两种催化剂在490 nm处有吸收带边,可见光激发途径是掺杂的N以填隙方式形成的杂质能级吸收电子发生的跃迁引起的;而N/TiO2-A和N/TiO2-M两种催化剂在整个可见光区域内具有可见光吸收,其对可见光的激发途径是掺杂N和氧空缺共同作用的结果.理论计算的N杂质能级位于价带上0.75 eV,与实验观察到的吸收带边结果十分吻合.XPS结果表明,几种催化剂的N1 s结合能位置都在399 eV附近,显示为填隙掺杂的N原子.填隙掺杂的N/TiO2,其Ti原子的2p结合能与未掺杂的TiO2相比增加了+0.3-+0.6 eV,而O1s电子的结合能增加了+0.2-+0.5eV,这是因为填隙的N原子夺取Ti和O的电子,Ti和O原子周围的电子密度降低了.电子能谱和吸光特性的研究都表明,掺杂的机理是在TiO2晶格内形成N原子的填隙.     

Electronic Structure and Optical-absorption Properties of C-, N-, and S-doped BiOCl: the First-principles Calculations

Impurity formation energy, electronic structure, and photocatalytic properties of C-, N-, or S-doped BiOCl are investigated by density-functional theory plus U calculations(DFT + U). Results show that the doping effect of S is better than that of C or N on the tunable photocatalytic activities of BiOCl. At low concentration, S-doped BiOCl systems are the most stable under Bi-rich growth conditions because of their lower impurity-formation energy. Compared with the electronic structures of S-doped BiOCl, C-or N-doped BiOCl have relatively deeper impurity energy levels appearing in their band gap(except Bi_(36)O_(35)NCl_(36)), which may act as photogenerated carrier-recombination centers and reduce photocatalytic activity. At high concentration, S is substituted on the O lattice site system, whereas some S 3p states mix with the valence band; this mixture leads to an obvious band-gap decrease and continuum-state formation above the valence-band edge of BiOCl. Such activity is advantageous to photochemical catalysis response. Compared with pure Bi OCl and a low-concentration S-doped system, a high-concentration S-doped system shows an obvious redshift on the absorption edge and has better photocatalytic O_2 evolution performance.     

Al掺杂对锐钛矿型TiO2光催化性能影响的研究

采用平面波赝势(PWPP)方法进行密度泛函(DFT)计算,研究了Al掺杂对锐钛矿晶体能带、态密度的影响.分析发现掺杂后Al原子3s和3p轨道上的电子虽然对晶体的价带和导带贡献不大,却诱使导带发生较大程度下移,禁带宽度减小,理论预测可以发生红移.采用低温燃烧合成法制备了Al掺杂锐钛矿型纳米TiO2,紫外-可见吸收光谱检测和甲基橙降解实验证明,Al掺杂TiO2光吸收强度增强,吸收带边界发生红移;光催化性能较纯TiO2有所改善.理论计算结果与实验结果相符.     

Electronic Structure and Optical Properties of K2Ti6O13 Doped with Transition Metal Fe or Ag

Based on the experimental study of the optical properties of K₂Ti₆O₁₃ doped with Fe or Ag, their electronic structures and optical properties are studied by the first-principles method based on the density functional theory (DFT). The calculated optical properties are consistent with the experiment results. K₂Ti₆O₁₃ doped with substitutional Fe or Ag has isolated impurity bands mainly stemming from the hybridization by the Fe 3d states or Ag 4d states with Ti 3d states and O 2p states and the band gap becomes narrower, the absorption edge of K₂Ti₆O₁₃ thus has a clear red shift and the absorption of visible light can be realized after doping. For Fe-doped K₂Ti₆O₁₃, the impurity bands are in the middle of the band gap, suggesting that they can be used as a bridge for valence band electrons transition to the conduction band. For Ag-doped K₂Ti₆O₁₃, the impurity bands form a shallow acceptor above the valence band and can reduce the recombination rate of photoexcited carriers. The experimental and calculated results are significant for the development of K₂Ti₆O₁₃ materials that have absorption under visible light.     

Bi掺杂锐钛矿相TiO2第一性原理计算

采用密度泛函理论(DFT)下的第一性原理平面波超软赝势方法计算了Bi掺杂前后锐钛矿相TiO2的电子结构和光学性质。结果分析发现:掺杂后Ti的电荷布居数下降,O的布居数增加;同时在TiO2禁带中引入了杂质能级,禁带宽度略微变大,但是杂质能级的作用抵消了禁带宽度变大带来的不利影响,使得掺杂后TiO2吸收带边红移并在可见光范围内吸收明显增强。     

N doping of TiO2(110): photoemission and density-functional studies

The electronic properties of N-doped rutile TiO2(110) have been investigated using synchrotron-based photoemission and density-functional calculations. The doping via N2+ ion bombardment leads to the implantation of N atoms (approximately 5% saturation concentration) that coexist with O vacancies. Ti 2p core level spectra show the formation of Ti3+ and a second partially reduced Ti species with oxidation states between +4 and +3. The valence region of the TiO(2-x)N(y)(110) systems exhibits a broad peak for Ti3+ near the Fermi level and N-induced features above the O 2p valence band that shift the edge up by approximately 0.5 eV. The magnitude of this shift is consistent with the "redshift" observed in the ultraviolet spectrum of N-doped TiO2. The experimental and theoretical results show the existence of attractive interactions between the dopant and O vacancies. First, the presence of N embedded in the surface layer reduces the formation energy of O vacancies. Second, the existence of O vacancies stabilizes the N impurities with respect to N2(g) formation. When oxygen vacancies and N impurities are together there is an electron transfer from the higher energy 3d band of Ti3+ to the lower energy 2p band of the N(2-) impurities.     

First systematic band-filling control in organic conductors

The systematic study of band-filling control for four kinds of organic conductors with various kinds of ground states has succeeded. (1) By partial substitution of (GaCl(4))(-) by (MCl(4))(2-) [M = Co, Zn] in the anion blocking layer of lambda-ET(2)(GaCl(4))(-) [ET = bis(ethylenedithio)tetrathiafulvalene], single crystals of lambda-ET(2)(GaCl(4))(-)(1-x)(MCl(4))(2-)(x) [x = 0.0, 0.05, 0.06] have been obtained. The resistivity at room temperature decreases from 3 Omega cm (x = 0.0) to 0.1 Omega cm (x = 0.06) by doping to the antiferromagnet with an effective half-filled band (x = 0.0). (2) Another 2:1 (donor/anion) salt, delta'-ET(2)(GaCl(4))(-), which is a spin gap material, has been doped as delta'-ET(2)(GaCl(4))(-)(1-x)(MCl(4))(2-)(x) [x = 0.05, 0.14]. The resistivity is lowered from 10 Omega cm (x = 0.0) to 0.3 Omega cm (x = 0.14). For both 2:1 salts, the semiconducting behaviors have transferred to relatively conductive semiconducting ones by doping. (3) As for alpha-type 3:1 salts, the parent material is in a charge-ordering state such as alpha-(ET(+)ET(+)ET(0))(CoCl(4))(2-)(TCE), where the charge-ordered donors are dispersed in the two-dimensional conducting layer. Although the calculation of alpha-ET(3)(CoCl(4))(2-)(TCE) shows a band-insulating nature, and the crystal structure analysis indicates that this material is in a charge-ordering state, the metallic behavior down to 165 K has been observed. With doping of (GaCl(4))(-) to the alpha-system, isostructural alpha-ET(3)(CoCl(4))(2-)(1-x)(GaCl(4))(-)(x)(TCE) [x = 0.54, 0.57, 0.62] have been afforded, where the pattern of the horizontal stripe-type charge ordering changes with an increase of x. (4) By doping (GaCl(4))(-) to the 3:2 gapless band insulator which is isostructural to beta'-ET(3)(MCl(4))(2)(2-) [M = Zn, Mn], the obtained beta'-ET(3)(CoCl(4))(2-)(2-x)(GaCl(4))(-)(x) [x = 0.66, 0.88] shows metallic behavior down to 100 and 140 K, respectively. They are the first metallic states in organic conductors by band-filling control of the gapless band insulator. These systematic studies of band-filling control suggest that the doping to the gapless band insulator with a pseudo-1/2-filled band is most effective.     

Effect of Zr and C Co-doping on the Optical Properties and Electronic Structure of TiO_2

The systematic trends and effect introduced by Zr and C co-doping to TiO2 of electronic structure and optical properties of anatase TiO2 have been calculated by the plane-wave ultra-soft pseudopotential density functional theory (DFT) method within the generalized gradient approximation (GGA) for the exchange-correlation potential. Through the current calculations, the density of states (DOS), energy band structure and optical absorption coefficients have been obtained for TiO2 and compared with the doped TiO2, and the influence of electronic structure and optical properties caused by Zr and C co-doping has been presented qualitatively together. The results revealed that the energy band gap has been decreased owing to the doped Zr and C, whereas the optical absorption coefficients have been increased in the region of 400～800 nm and a red shift of absorption band can be found. Accordingly, photo catalytic activity of TiO2 has been enhanced. The current calculations are in good agreement with the experimental data.     

Indium induced band gap tailoring in AgGa(1-x)In(x)S(2) chalcopyrite structure for visible light photocatalysis

Indium was substituted at gallium site in chalcopyrite AgGaS(2) structure by using a simple solid solution method. The spectroscopic analysis using extended x-ray absorption fine structure and x-ray photoelectron spectroscopy confirmed the indium substitution in AgGaS(2) lattice. The band gap energy of AgGa(1-x)In(x)S(2) (x=0-1) estimated from the onset of absorption edge was found to be reduced from 2.67 eV (x=0) to 1.9 eV (x=1) by indium substitution. The theoretical and experimental studies showed that the indium s orbitals in AgGa(1-x)In(x)S(2) tailored the band gap energy, thereby modified the photocatalytic activity of the AgGa(1-x)In(x)S(2).     

Sol-Gel法制备La~(3+)改性的TiO_2纳米粉体

在常用的半导体光催化材料中,研究较多的有TiO2、ZnO、CdS等[1-3],其中TiO2因性能稳定、催化活性高、无毒、不产生二次污染和成本低廉等优点,在光催化降解污染物领域显示出优越的应用前景[3-6].     

Theoretical study of the structure and optical properties of carbon-doped rutile and anatase titanium oxides

The structure and optical properties of carbon-doped titanium oxides, TiO2, in the rutile and anatase forms have been investigated theoretically from first principles. Two possible doping sites were studied, carbon at an oxygen site (anion doping) and carbon at a titanium site (cation doping). The calculated structures suggest that cation-doped carbon atoms form a carbonate-type structure, whereas anion-doped carbon atoms do not invoke any significant structural change. A density-of-states analysis revealed three in-gap impurity states for anion doping. The optical properties of anion-doped cells qualitatively agree with the experimentally reported visible-light absorbance values. We ascribe part of the absorption to transitions from the valence band to one of the impurity states. These transitions should be able to promote photocatalytic reactions, because electron holes in the valence band are considered to be crucial for this process. Neither in-gap impurity states nor visible-light absorbance were observed in the case of cation doping. The effect of oxygen vacancies was also investigated. Introduction of oxygen vacancies into anion-doped TiO2 populates the impurity states and thus suppresses photocatalysis. The interaction of a doped carbon atom with an oxygen vacancy at a finite spatial separation was also carried out. The possibility of either a carbon-oxygen vacancy pair or higher carbon-oxygen vacancy complex existing is discussed.     

TixV1-xO2薄膜的光学及相变特性

采用射频磁控溅射方法,在c-Al2O3(0001)基底上制备了不同钒钛比例的TixV1-xO2(0≤x≤1)薄膜,利用X射线衍射(XRD)、拉曼(Raman)光谱、紫外-可见-近红外(UV-Vis-NIR)光谱对薄膜结构及光学性能进行测试分析,计算薄膜的太阳能智能调节率和光学带隙.实验结果及分析表明:随着Ti含量的增加,薄膜的红外调节特性和热滞特性逐渐减弱直至消失;薄膜样品的光学带隙随着Ti含量的增加而变宽,光响应范围发生蓝移;其光学带隙随着V含量的增加而变窄,光响应范围发生红移.     

水热法合成多孔Ag_2S敏化二氧化钛催化剂及其可见光催化活性(英文)

Porous Ag2S sensitized TiO2 catalysts were synthesized by the hydrothermal process.The crystallization and porous structure of the Ag2S/TiO2 composite photocatalysts were investigated by X-ray diffraction,scanning electron microscopy with energy dispersive X-ray analysis,UV-Vis diffuse reflectance spectroscopy,and N2 adsorption.The Ag2S/TiO2 composites were mainly composed of anatase TiO2 and acanthite Ag2S.The absorption edge wavelengths of TiO2 and the Ag2S/TiO2 composite prepared with 3 mmol Na2S.5H2O were 400 and 800 nm,respectively,that is,the absorption edge of the composite had a pronounced red shift.The photocatalytic activity under visible light was investigated by the degradation of methylene blue with a UV-Vis spectrophotometer.The photocatalytic activities under visible light of the Ag2S/TiO2 photocatalysts were much higher than that of TiO2.     

Pyrogenic iron(III)-doped TiO2 nanopowders synthesized in RF thermal plasma: phase formation, defect structure, band gap, and magnetic properties

Iron(III)-doped TiO(2) nanopowders, with controlled iron to titanium atomic ratios (R(Fe/Ti)) ranging from nominal 0 to 20%, were synthesized using oxidative pyrolysis of liquid-feed metallorganic precursors in a radiation-frequency (RF) thermal plasma. The valence of iron doped in the TiO(2), phase formation, defect structures, band gaps, and magnetic properties of the resultant nanopowders were systematically investigated using M?ssbauer spectroscopy, XRD, Raman spectroscopy, TEM/HRTEM, UV-vis spectroscopy, and measurements of magnetic properties. The iron doped in TiO(2) was trivalent (3+) in a high-spin state as determined by the isomer shift and quadrupole splitting from the M?ssbauer spectra. No other phases except anatase and rutile TiO(2) were identified in the resultant nanopowders. Interestingly, thermodynamically metastable anatase predominated in the undoped TiO(2) nanopowders, which can be explained from a kinetic point of view based on classical homogeneous nucleation theory. With iron doping, the formation of rutile was strongly promoted because rutile is more tolerant than anatase to the defects such as oxygen vacancies resulting from the substitution of Fe(3+) for Ti(4+) in TiO(2). The concentration of oxygen vacancies reached a maximum at R(Fe/Ti) = 2% above which excessive oxygen vacancies tended to concentrate. As a result of this concentration, an extended defect like crystallographic shear (CS) structure was established. With iron doping, red shift of the absorption edges occurred in addition to the d-d electron transition of iron in the visible light region. The as-prepared iron-doped TiO(2) nanopowders were paramagnetic in nature at room temperature.     

Role of complex defects in photocatalytic activities of nitrogen-doped anatase TiO(2)

Deep impurity states associated with a substitutional nitrogen at an oxygen site (N(O)) are believed to be the source of the visible-light absorption of nitrogen-doped titanium dioxide (TiO(2)). Our comprehensive study using density functional theory (DFT) plus onsite Coulomb interaction (U) reveals that a titanium atom at an interstitial site (Ti(i)) is highly mobile and strongly binds with N(O). Hybridizations of N p with Ti d states of Ti(i) give rise to a new band at the valence band edge, eliminating the hole-trapping centers originated from the deep N(O) states. The suggested mechanism explains the photocatalytic oxidation reactions as well as the visible-light absorption observed on N-doped anatase TiO(2).     

Titanium oxide complexes with dinitrogen. Formation and characterization of the side-on and end-on bonded titanium oxide-dinitrogen complexes in solid neon

The reactions of titanium oxide molecules with dinitrogen have been studied by matrix isolation infrared spectroscopy. The titanium monoxide molecule reacts with dinitrogen to form the TiO(N(2))(x) (x = 1-4) complexes spontaneously on annealing in solid neon. The TiO(η(1)-NN) complex is end-on bonded and was predicted to have a (3)A' ground state arising from the (3)Δ ground state of TiO. Argon doping experiments indicate that TiO(η(1)-NN) is able to form complexes with one or more argon atoms. Argon atom coordination induces a large red-shift of the N-N stretching frequency. The TiO(η(2)-N(2))(2) complex was characterized to have C(2v) symmetry, in which both the N(2) ligands are side-on bonded to the titanium metal center. The tridinitrogen complex TiO(η(1)-NN)(3) most likely has C(3v) symmetry with three end-on bonded N(2) ligands. The TiO(η(1)-NN)(4) complex was determined to have a C(4v) structure with four equivalent end-on bonded N(2) ligands. In addition, evidence is also presented for the formation of the TiO(2)(η(1)-NN)(x) (x = 1-4) complexes, which were predicted to be end-on bonded.