溅射参数对ZnO薄膜物性的影响

采用磁控溅射方法分别在ITO玻璃和硅片上成功制备了具有良好C轴取向的ZnO薄膜.并研究了溅射气压,基底温度,以及氧偏压对ZnO薄膜物性的影响,从而确定了制备ZnO薄膜的最佳溅射条件.     

衬底温度对ZnO薄膜生长过程和微结构的影响

从原子尺度上去研究薄膜生长过程中温度对薄膜取向性、缺陷结构以及薄膜完整性的影响和作用规律, 对于解释薄膜生长的物理本质、控制生长条件、提高薄膜制备的质量具有重要意义. 本文应用基于反应力场的分子动力学方法研究了ZnO薄膜(000l)表面作为衬底的薄膜沉积生长过程, 初步讨论了衬底温度(200、500和800 K)变化对沉积较薄ZnO膜质量的影响, 部分结果与实验观察相符. 结果表明, 衬底温度在500 K左右时, 沉积原子结构径向分布函数曲线特征峰尖锐、明显, 有序度较高, 注入和溅射对薄膜完整性影响较小, 沉积形成的薄膜结构稳定而又致密. 在预置衬底表面平坦的情况下薄膜呈现一种链岛状的生长模式, 每原子层均具有两种生长取向, 导致其生长前锋交汇处形成了一种新的有序缺陷.     

热处理对电沉积制备CuInGaSe2 薄膜的影响

CuInGaSe2薄膜太阳能电池因具有稳定、高效、低成本和环保等特点而受到国内外科学家的重视.采用Mo/钠钙玻璃衬底为研究电极,饱和甘汞电极(SCE)为参比电极,大面积的铂网电极为辅助电极的三电极体系,在钼/钠钙玻璃衬底上利用电沉积技术制备出太阳能电池用的CuInGaSe2薄膜.分析了不同热处理温度对电沉积制备的CuInGaSe2薄膜的影响,结果表明:当热处理温度为450℃时,所制备的CuInGaSe2薄膜的化学组成接近理想的化学计量比,薄膜具有黄铜矿结构,颗粒均匀和致密性较好.     

溶胶-凝胶法制备高取向Bi4Ti3O12/SrTiO3(100)薄膜

Bi4Ti3O12具有良好的铁电、电光等性能山、特别是Bi4Ti3O12薄膜很适合作永久性存储材料，也可用于电光器件问．在微电子学、光电子学、集成光学、集成铁电学等领域均有广泛开发和应用前景，国外已用溅射法、激光沉积法制备出c轴取向Bi。Ti3Ol。薄膜【’，＼山东大学用MOCVD法制     

阳极电沉积Ti/MnO2电极及其苯酚降解的电催化性能

应用阳极电沉积法制备钛基二氧化锰(Ti/MnO2)电极.采用X射线衍射(XRD)、扫描电子显微镜(SEM)及能谱(EDS)表征电极结构、形貌.据V～logi曲线及苯酚降解实验优化电极制备工艺参数:在电流密度4mA·cm-2、Mn2+离子浓度0.5 mol·L-1及温度70℃条件下阳极电沉积Ti/MnO2电极.以苯酚为目...     

六氰合铁酸锰铬修饰电极的制备及其电化学行为

应用循环伏安法在活化玻碳电极(GCE)表面制备六氰合铁酸锰铬(MnCrHCF)膜修饰电极(MnCrH-CF/GCE)并研究其电化学性质.探讨影响膜电沉积的因素,研究pH值以及不同支持电解质等制备条件对该修饰电极性能的影响,优化制备工艺,分析其反应机理.     

Ti/nanoTiO_2-Pt阳极和Ti/nanoTiO_2阴极成对电合成葡萄糖酸锌和丁二酸

使用新颖的纳米结构电极成对电合成葡萄糖酸锌和丁二酸.采用溶胶-凝胶法制备Ti基纳米TiO2(Ti/nanoTiO2)电极,同时采用电沉积法制备Ti基纳米TiO2-Pt(Ti/nanoTiO2-Pt)修饰电极.通过循环伏安研究发现,Ti/nanoTiO2-Pt电极对葡萄糖氧化及Ti/nanoTiO2电极对马来酸还原均具有高催化活性.以Ti/nanoTiO2-Pt电极为阳极、Ti/nanoTiO2电极为阴极,通过正交实验得到成对电合成葡萄糖酸锌和丁二酸的优化条件为:阳极和阴极电流密度分别为1.2A·dm-2和3.0A·dm-2,阳极液为0.4mol·L-1葡萄糖+0.6mol·L-1NaBr,阴极液为0.6mol·L-1马来酸+0.2mol·L-1NaCl,温度50℃.成对电合成的总电流效率达到170%.     

氢气泡模板法电沉积制备三维多孔铜薄膜

应用阴极析氢气泡模板法电沉积制备三维多孔铜薄膜,基础电解液组成为0.2 mol.dm-3CuSO4和1.5 mol.dm-3H2SO4.研究了电流密度(0.5~8.0 A.cm-2)、温度(20~70℃)、支持电解质(Na2SO4)以及添加剂HC l和聚乙二醇(PEG)等对薄膜的孔径大小和孔壁结构的影响.扫描电子显微镜(SEM)分析表明,降低镀液温度和添加Na2SO4、PEG都可降低孔径的大小,但对孔壁结构无影响.加入微量的氯离子可显著改变薄膜的孔壁结构,得到孔壁结构较为致密的三维多孔铜电极.循环伏安(CV)测试结果显示三维多孔铜薄膜电极在碱性条件下电氧化甲醇的电流密度比光滑铜电极提高了近20倍.     

PtRu合金薄膜结构及其催化性能

采用离子束溅射技术(IBS)在碳纤维布基底上制备PtRu/C合金薄膜作为燃料电池电极催化材料. 应用XPS、XRD、GIXD、AFM等分析手段研究了PtRu薄膜表面的成分、化学状态、表面形貌以及PtRu薄膜的表层、次表层和体相的结构. 结果表明, 在双束离子沉积过程中, 由于溅射产生的Pt+和Ru+之间的相互作用, 使薄膜表面的化学状态和薄膜表层(15-40 nm范围内)结构发生了变化, 并影响PtRu薄膜的催化性能. 当xPt/xRu=0.64时, PtRu薄膜出现Ru固溶体在表层富集, 并在表层诱发形成Pt39Ru61非晶相.     

铁氰化铈薄膜固载血红蛋白修饰的过氧化氢生物传感器的制备及性能

采用电化学沉积法将铁氰化铈(CeHCF)薄膜修饰于玻碳电极(GCE)表面,得到铁氰化铈薄膜修饰玻碳电极;将血红蛋白(Hb)固载于该修饰电极表面,成功制得了Hb/CeHCF/GCE过氧化氢生物传感器.考察了铁氰化铈薄膜修饰玻碳电极的氧化还原机理和制备条件,并对血红蛋白在电极上的电子传递过程进行了较为深入的研究.结果表明,铁氰化铈薄膜为血红蛋白提供了温和的固载环境,可实现血红蛋白与电极表面的直接电子转移,提高了血红蛋白的电化学活性;所制得的传感器对过氧化氢具有较高的催化响应和较强的稳定性.相关研究结果在生物医学和临床医学领域具有一定的借鉴意义.     

Microstructure and ferroelectric properties of r.f. magnetron sputtering derived PZT thin films deposited on interlayer (PbO/TiO2)

Lead zirconate titanate (PZT) thin films were deposited on Pt/Ti/SiO₂/Si and interlayer/Pt/Ti/SiO₂/Si substrate by radio frequency (r.f.) magnetron sputtering with a Pb_1.1Zr_0.53Ti_0.47O₃ target. The crystallization of the PZT thin films was formed only by substrate temperature. When interlayer (PbO/TiO₂) was inserted between the PZT thin film and the Pt electrode, the grain growth and processing temperature of the PZT thin films were considerably improved. Compared to PZT/Pt structure, the dielectric constant and polarization properties of the PZT/interlayer/Pt structure were fairly improved. In particular, PZT/interlayer/Pt at the substrate temperature of 400 °C showed prevalent ferroelectric properties (_r=475.97, tanδ=0.0591, P_r=23 μC/cm²). As a result of an X-ray photoelectron spectroscopy (XPS) depth-profile analysis, it was found that PZT/interlayer/Pt deposited only by substrate temperature without the post-annealing process via r.f. magnetron sputtering method remained independent of each other regardless of substrate temperatures.     

Pt/Ti双层电极应力的微观分析研究

常温下用直流溅射法在Si（100）上淀积Pt/Ti电极薄膜.采用X射线衍射、原子力显微镜检测不同退火温度的薄膜,结果表明,退火初期Pt层内首先产生了压应力,从而使Pt表面形成了小丘凸起;退火过程产生的热应力在Pt层残余应力的产生中占主导地位,这种热应力使得Pt层最后的应力状态为张应力状态并且随着Pt层中Pt3Ti金属间化合物数量的增多而增大.     

Preparation of PZT Film and Powder by Sol-Gel Technique Using Ti- and Zr-Alkoxides and a Novel Pb-Precursor; Pb(NO3)2 1.5EO3

PZT (PbZr0.53Ti0.47O3) films and powders have been prepared by a precursor mixture containing Pb(NO3)1.5EO3 (EO3=triethylene glycol) and Zr- and Ti-methoxy ethanolates. The gel films have been deposited on Si/Ti/Pt substrates and on glass substrates from which they can easily be removed. The PZT films on the Si/Ti/Pt substrates were prepared with thicknesses up to 200 nm per layer after heating to 700°C. The phase development on heat-treatment of loose gel films to yield PZT was investigated by Powder-XRD, FT-IR, SEM-EDS, TEM-EDS, thermo-mass spectroscopy and DSC and the PZT was found to form in the region 550–700°C. PZT powders of 50–5000 nm sizes were prepared by hydrolysis under basic conditions and washing with water followed by heat-treatment to 650°C.     

Combined AES/factor analysis and RBS investigation of a thermally treated Pt/Ti metallisation on SiO2

Summary Pt/Ti metallisation bilayers are used as bottom electrodes for ferroelectric thin films. During deposition of the ferroelectric films, these electrodes are exposed to elevated temperatures causing modifications of the Pt/Ti bottom electrode. Diffusion and oxidation of the Ti adhesion layer have been studied by the application of factor analysis to AES depth profile data and by RBS. Factor analysis was employed to extract the chemical information from the measured AES spectra and to derive semiquantitative depth profiles of the identified material compounds. RBS was used to obtain the quantitative depth distribution of the elements. By the combination of both methods, diffusion and oxidation processes were observed and could be precisely described.     

Microstructure and properties of sol-gel derived Pb(Zr<Subscript>0.3</Subscript>Ti<Subscript>0.7</Subscript>)O<Subscript>3</Subscript> thin films on GaN/sapphire for nanoelectromechanical systems

Highly (111) oriented, phase-pure perovskite Pb(Zr_0.3Ti_0.7)O₃ (or PZT 30/70) thin films were deposited on single-crystal, (0001) wurtzite GaN/sapphire substrates using the sol-gel process and rapid thermal annealing. The phase, crystallinity, and stoichiometry of annealed PZT films were evaluated by X-ray diffraction and Rutherford backscattering spectroscopy. The atomic force microscopy revealed a smooth PZT surface (rms roughness ∼1.5 nm) with striations and undulations possibly influenced by the nature of the underlying GaN surface. The cross-sectional field-emission scanning electron microscopic images indicated a sharper PZT/GaN interface compared to that of sol-gel derived PZT on (111) Pt/TiO₂/SiO₂/(100) Si substrates. The capacitance-voltage (C-V) characteristics for PZT in the Pt/PZT/GaN (metal-ferroelectric-semiconductor or MFS) configuration were evaluated as a function of annealing temperature and applied voltage. The observed C-V hysteresis stemmed from trapped charge at defect sites within PZT. Also, the lower capacitance density (C/A = 0.35 μF/cm², where A is the area of an electrode) and remnant polarization (P _r ∼ 4 μC/cm²) for PZT in the MFS configuration, compared to the values for PZT in the MFM configuration (Pt/PZT/Pt), were attributed to the high depolarization field within PZT.     

Ultra light tunable capacitor based on PZT thin film deposited onto aluminium foil

Lead zirconate titanate (PZT) thin films with a Zr/Ti ratio of 57/43, elaborated by a derived sol–gel process, have been deposited onto bare and RuO₂ coated aluminium substrate 16 μm thick. Commercial aluminium foil presents many advantages as ultra light weight (43 g m^?2), conformability, conduction, can be easily cut, and is one of the cheapest substrates used for PZT thin films deposition (<0.1$ m^-2). XRD measurements have shown a well crystallized PZT in the perovskite structure and ferroelectric behaviour has also been observed. By the use of a RuO₂ film 100 nm thick at the PZT/aluminium interface, the coercive field and tunability values have been strongly improved despite an increase of the dielectric losses. The lead excess introduced in the precursor solution has been increased up to 65 % in order to lower the crystallization temperature of the PZT around 560 °C and tunability has been studied as a function of annealing time and temperature.     

Chemical solution-deposited PbZr 0.53 Ti 0.47 O3 on La 0.5 Sr 0.5 Co O3. SIMS investigation of the effect of different precursor additives on the layer structure

Chemical solution-deposited thin films of PbZr(0.53)Ti(0.47)O(3)/La(0.5)Sr(0.5)CoO(3) on Pt/TiO(2)/SiO(2)/Si substrates have been investigated by dynamic SIMS. The PbZr(0.53)Ti(0.47)O(3) (PZT) is intended to serve as a ferroelectric layer for microelectronic or microelectromechanical applications; conducting La(0.5)Sr(0.5)CoO(3) (LSCO) is a buffer layer intended to eliminate fatigue effects which usually occur at the Pt/PZT interface. Depth profiles of the main components were obtained and revealed that significant diffusion occurred during the deposition and crystallisation processes. Two types of sample, with different thickness of PZT and different types of poly(vinyl alcohol) (PVA) added to the LSCO precursor, were investigated.     

射频磁控溅射制备纳米TiO2薄膜的光电化学行为

在室温下采用射频磁控溅射法制备了纳米晶粒的TiO2薄膜,用循环伏安法研究了ITO/TiO2薄膜电极的光电化学行为,并测量了相应TiO2薄膜的亲水性与光催化能力.结果表明,在室温下制备的TiO2薄膜为无定形结构,当退火温度超过400 ℃时转化为锐钛矿结构.在400 ℃下退火的TiO2薄膜具有良好的亲水性和光催化能力. TiO2薄膜电极用254 nm的紫外光照射一定时间后会产生新的氧化峰,且随着光照时间的增加,峰电流也增加.初步认为用紫外光照射一定时间后, TiO2薄膜的循环伏安图的氧化峰属于光生的Ti3＋,而光致亲水性可能与Ti3＋的生成有关.     

Examples for the improvements in AES depth profiling of multilayer thin film systems by application of factor analysis data evaluation

Factor analysis has proved to be a powerful tool for the full exploitation of the chemical information included in the peak shapes and peak positions of spectra measured by AES depth profiling. Due to its ability to extract the number of independent chemical components, their spectra and their depth distributions, its information content exceeds the one of the usual peak-to-peak height evaluation of AES depth profile data. Using modern software with a graphically interactive user interface the analyst is put into a position, where he can work with Factor Analysis on a physically intuitive level despite of all the matrix algebra mathematics which it is based upon. The progress brought about by Factor Analysis to AES depth profiles of thin films is demonstrated by the analysis of two thin film systems. The first one is a Pt/Ti metallisation used as bottom electrode for ferroelectric thin films, the second one is a multilayer system where a Ti silicide formation of buried Ti/Si bilayers has been induced. Both examples show that Factor Analysis evaluation of AES depth profile data is capable to give access to stoichiometry information and to reveal interfacial layer phases, information which is hardly obtained from the conventional peak-to-peak height data evaluation.     

Effect of sol-gel preparation method on particle morphology in pure and nanocomposite PZT thin films

Double-scale composite lead zirconate titanate Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films of 360 nm thickness were prepared by a modified composite sol-gel method. PZT films were deposited from both the pure sol and the composite suspension on Pt/Al₂O₃ substrates by the spin-coating method and were sintered at 650°C. The composite suspension formed after ultrasonic mixing of the PZT nanopowder and PZT sol at the powder/sol mass concentration 0.5 g mL⁻¹. PZT nanopowder (≈ 40–70 nm) was prepared using the conventional sol-gel method and calcination at 500°C. Pure PZT sol was prepared by a modified sol-gel method using a propan-1-ol/propane-1,2-diol mixture as a stabilizing solution. X-ray diffraction (XRD) analysis indicated that the thin films possess a single perovskite phase after their sintering at 650°C. The results of scanning electron microscope (SEM), energy-dispersive X-ray (EDX), atomic force microscopy (AFM), and transmission electron microscopy (TEM) analyses confirmed that the roughness of double-scale composite PZT films (≈ 17 nm) was significantly lower than that of PZT films prepared from pure sol (≈ 40 nm). The composite film consisted of nanosized PZT powder uniformly dispersed in the PZT matrix. In the surface micrograph of the film derived from sol, large round perovskite particles (≈ 100 nm) composed of small spherical individual nanoparticles (≈ 60 nm) were observed. The composite PZT film had a higher crystallinity degree and smoother surface morphology with necklace clusters of nanopowder particles in the sol-gel matrix compared to the pure PZT film. Microstructure of the composite PZT film can be characterized by a bimodal particle size distribution containing spherical perovskite particles from added PZT nanopowder and round perovskite particles from the sol-matrix, (≈ 30–50 nm and ≈ 100–120 nm), respectively. Effect of the PZT film preparation method on the morphology of pure and composite PZT thin films deposited on Pt/Al₂O₃ substrates was evaluated.