溶液法制备氧化锌半导体薄膜及其顶栅极晶体管器件

采用旋涂法用浓度分别为0.05,0.10和0.25 mol·L^-1的氧化锌前躯体溶液制备了氧化锌薄膜,并且制备了基于氧化锌多层膜的顶栅极晶体管器件,其中以利用光刻工艺刻蚀的氧化铟锡为源漏电极。通过原子力显微镜(AFM)和X-射线衍射(XRD)分别表征了薄膜的形貌以及结晶情况,并且讨论了前躯体的浓度顺序对氧化锌多层膜的影响。按照浓度从大到小的顺序依次旋涂前躯体溶液制备的氧化锌薄膜表现出了较高的载流子迁移率(7.1×10^-3 cm²·V^-1·s^-1),而按照浓度从小到大的顺序依次旋涂前躯体溶液制备的氧化锌薄膜的载流子迁移率为5.2×10^-3 cm²·V^-1·s^-1。文中通过对两种多层薄膜的形貌和结晶性能的分析表明影响顶栅极薄膜晶体管性能的主要因素是薄膜的粗糙度。平整的薄膜有利于形成较好的半导体层/绝缘层接触界面,从而有利于提高器件的载流子迁移率。     

有机场效应晶体管中给体-受体共聚物材料研究进展

自20世纪80年代至今,有机场效应晶体管(Organic field-effect transistor,OFET)的研究已经取得了很大的发展,目前可用于场效应晶体管的有机半导体材料已达数百种.经过30年的发展,有机场效应晶体管的迁移率从10-6~10-5cm2?V-1?s-1提高到12 cm2?V-1?s-1,增长了6个数量级,其性能已经超过了无定形性硅场效应晶体管(0.1~1 cm2?V-1?s-1).值得指出的是,目前该类高性能的材料几乎都是基于给体-受体(Donor-Acceptor,简称D-A)的共轭聚合物,它也被誉为第三代半导体材料.本文综述了近年来国内外D-A共聚物半导体材料的研究状况,对空穴传输型、双极传输型和电子传输型的D-A共聚物半导体材料进行了分类总结和评述,并对其设计思路,器件制备及性能做了详细介绍,总结了材料的化学结构与器件性能间的基本规律,为今后应用于有机场效应晶体管的给体-受体共聚物半导体材料提供设计思路.     

应用混合溶剂制备高性能聚噻吩有机薄膜晶体管

采用良溶剂与不良溶剂混合的方法,提高了聚3-己基噻吩(P3HT)薄膜晶体管的场效应迁移率.UV-Vis吸收光谱、掠角X-射线衍射和原子力显微镜研究表明,通过向P3HT的氯仿溶液中加入适量二氧六环可以增强溶液分子间π-π相互作用,在溶液中形成分子链有序排列的P3HT聚集体,从而提高了旋涂得到的聚合物薄膜结晶度,并控制分子沿着有利于电荷传输方向排列.薄膜的场效应迁移率在二氧六环的含量为10vol%时达到最高值1.7×10-2 cm2 V-1 s-1,与纯氯仿溶液制得的P3HT薄膜的迁移率相比提高了50多倍.     

基于表面等离子共振效应的有机光敏晶体管

通过原位制备金纳米颗粒,利用表面等离子共振效应,在金纳米颗粒表面旋涂无可见光响应的聚合物获得了同时具有高迁移率(0.12 cm2·V-1·s-1)和高响应度(11.6 A/W)的有机光敏晶体管.金纳米颗粒表面的化学修饰对提高器件性能起到关键作用.基于表面等离子共振效应建立了一种利用无可见光响应(或弱可见光响应)有机半导体获得高性能有机光敏晶体管的方法.     

聚(茚并芴-三苯胺)的合成及性能

设计并合成了一类新的可用于有机场效应晶体管(OFET)的聚合物半导体材料聚(茚并芴-三苯胺)(pIFTPA1~4), 通过核磁共振谱和凝胶渗透色谱等对聚合物进行了表征, 同时对其场效应薄膜晶体管性能进行了测试. 结果表明, 这些聚合物形成了无定形半导体膜, 在空气中稳定, 其载流子迁移率远高于聚三苯胺(pTPA)类材料, 其中pIFTPA1载流子迁移率高达4×10^-2 cm²/(V·s), 开关比为10⁶.     

聚(3-己基)噻吩薄膜中电荷传导的研究

对两种具有相同化学结构的聚(3-己基)噻吩膜进行了电荷传导研究以检验膜的结构对载流子迁移率的影响. 一种膜是由3-己基噻吩单体经电化学合成直接制备的膜(原位生长膜); 另一种膜是将原位生长膜溶于三氯甲烷后重新滴涂而成的(滴涂膜). 研究表明, 虽然两种膜的制备方法不一样, 但在最低(0.02%)和较高(20%～30%)掺杂率下两膜中的载流子迁移率相一致; 然而在中等掺杂率区域, 两膜中的载流子迁移率明显不同. 对于原位生长膜, 载流子迁移率在低掺杂区域几乎保持不变, 当掺杂率大于1%后开始上升; 而在滴涂膜中, 随着掺杂率的增加, 迁移率先下降然后迅速升高. 上述两种迁移率变化特征分别与以前研究中观察到的电化学合成高分子膜和化学合成高分子旋涂或滴涂膜中迁移率的变化特征相一致, 表明了迁移率随掺杂率变化特征的改变是由膜的结构变化而引起的     

紫外光照射对掺铝氧化锌薄膜导电和透光性质的影响

本文采用光助溶胶—凝胶法制备了掺铝氧化锌(AZO)透明导电薄膜.研究了紫外光照射对薄膜导电性和透光性质的影响.结果表明:光照使薄膜的导电性显著提高,且光照后薄膜方阻的降低幅度随薄膜晶粒尺寸的减小而逐渐增加;而随着紫外光照射时间延长,薄膜的紫外吸收边蓝移,近红外区透光率降低.以上实验现象可能与表面吸附氧解吸引起的载流子浓度增加、迁移率升高以及分层退火处理形成的薄膜结构有关.     

Nafion基氧化还原聚合物在空气中的电荷传输性能

利用三明治电池和伏安法测试了不同制备条件的Nafion基氧化还原聚合物膜在空气中的电荷传输性能. 研究结果表明, 混合适量聚乙二醇(PEG)的Nafion基金属联吡啶配合物{Nafion[M(bpy)2+3, PEG](M=Ru, Fe)}膜的表观电荷传递扩散系数(Dct)达到10-6-10-7 cm2·s-1 , 电子或空穴迁移率(μ)达到10-4-10-5 cm2·V-1·s-1. 在导电玻璃(ITO)电极与Nafion基氧化还原聚合物膜界面引入一层导电聚苯胺(PANI)后, 降低了其接触电阻, 使氧化还原聚合物膜的Dct提高至10-5-10-6 cm2·s-1, μ提高至10-3-10-4 cm2·V-1·s-1, 且工作电流提高了近两个数量级. 该固态氧化还原聚合物膜的性能比较稳定, 在空气中放置30天后其Dct和μ降低得很少.     

蒽类衍生物的电荷传输性质

以具有较高迁移率的对称取代类蒽的衍生物{2,6-二[2-(4-戊基苯基)乙烯基]蒽,DPPVAnt;2,6-二-噻吩蒽,DTAnt;2,6-二[2-己基噻吩]蒽,DHTAnt}为研究对象,采用密度泛函理论的B3LYP方法,在6-31G(d)的基组水平上研究了三种蒽类衍生物的分子结构、电子结构、重组能和电荷传输积分,采用Einstein关系式计算了室温下的载流子迁移率,并与蒽的相关计算结果进行了比较.DPPVAnt是较好的空穴传输材料,其空穴迁移率为0.49cm2·V-1·s-1;DHTAnt有利于电子传输,其电子迁移率为0.12cm2·V-1·s-1;而DTAnt是一种较好的双极性材料,其空穴迁移率和电子迁移率分别为0.069和0.060cm2·V-1·s-1.计算得到的迁移率与实验结果处于同一数量级.三种蒽类衍生物的电子重组能与蒽的相近,而空穴重组能均大于蒽的空穴重组能,大小顺序为蒽DPPVAntDTAntDHTAnt.这与计算的迁移率结果不一致,说明分子的堆积结构决定材料的电荷传输性质.     

含1,4-二酮吡咯并吡咯和铂的共轭聚合物的场效应性质研究

本文介绍了一种含有1,4-二酮吡咯并吡咯和铂的金属有机共轭聚合物。通过紫外-可见吸收光谱及电化学测得该聚合物的LUMO和HOMO分别为-3.4e V和-5.3e V。通过旋涂方法制备了该材料的底栅底接触场效应器件,并在退火至160℃之后测得其最高性能为:空穴迁移率1.0×10-3cm2·V-1·s-1,开关比105,阈值电压-15V。同时,通过原子力显微镜和X射线衍射对材料薄膜的退火过程进行了研究。     

A structurally ordered thiophene-thiazole copolymer for organic thin-film transistors

This paper reports a new donor-acceptor copolymer semiconductor, PTBTh, comprising bithiophene and bithiazole where the regular coplanar structure and the intramolecular charge transfer are expected to increase the opportunity for --- stacking and charge transport. The AFM image shows lamellar stacking of the polymer on the surface. The field-effect transistor (FET) properties of PTBTh have been evaluated by a bottom-contact/bottom-gate TFT configuration. The device showed a high hole mobility of 1.14×10-2 cm2 V-1 s-1 and a current on/off ratio of 3×105 with the polymer thin film annealed at a mild temperature of 120 ℃ when measured under ambient conditions.     

ZnO/eosin-Y混合薄膜的生长机理和形态

Thin hybrid films of ZnO/eosin-Y were prepared by electrodeposition at-0.8 and-0.9 V in aqueous and non-aqueous baths at temperatures ranging from 40 to 90 ℃ with dye concentrations of 100 and 400 μmol·L-1.The films were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),energy-dispersive X-ray analysis (EDX),and absorption spectroscopy.The films prepared in a non-aqueous bath were non-porous and did not adsorb dye molecules on their surface.However,the films grown in aqueous media were porous in nature and adsorbed dye during the deposition of ZnO.Preferential growth of the film along the (002) face was observed,and the highest crystallinity was achieved when the film was deposited at 60 ℃.The maximum absorption was achieved for the films grown at 60 to 70 ℃,a deposition potential of-0.9 V,and a dye concentration of 100 μmol·L-1.     

Doping properties of polydithienylmethine: a study on the correlation between polymer chain length, spectroscopy, and transport

(1S)-(+)-10-Camphorsulfonic acid-doped polydithienylmethine was prepared through an acid-catalyzed condensation reaction of alpha,alpha'-di-2-thienyl-(2,2'-bithiophene)-5,5'-dimethanol and was characterized by 1H NMR spectroscopy and size exclusion chromatography (SEC). The electronic and vibrational properties of the resulting polymer thin films vary with the loadings of the (1S)-(+)-10-camphorsulfonic acid. The dark conductivity and drift mobility, which is significantly high, of the polymer thin films were enhanced with increasing doping levels and reached maximum values of 8.0x10(-5) S.cm-1 and 3.5x10(-2) cm2.V-1.s-1, respectively, at a 7 mol % dopant loading. Higher doping levels (>7 mol %) result in nonuniform polymer thin films with degraded optical quality due to the formation of nanocrystalite and thus a decrease in conductivity and drift mobility was observed. The doped polydithienylmethine thin film also exhibited a photoconductivity response with an excitation at 457 nm and the highest photoconductivity (2x10(-4) S.cm-1) was again observed at the 7 mol % doping level. Spectroscopic investigation suggests that the enhanced transport properties can be attributed to polaronic species present. The electronic and vibrational changes which relate to such doping were characterized by electronic absorption spectroscopy, Raman spectroscopy, and FTIR spectroscopy. The changes in transport values can be directly related to the changes we see in our spectroscopic investigations.     

Air-assisted high-performance field-effect transistor with thin films of picene

A field-effect transistor (FET) with thin films of picene has been fabricated on SiO2 gate dielectric. The FET showed p-channel enhancement-type FET characteristics with the field-effect mobility, mu, of 1.1 cm2 V-1 s-1 and the on-off ratio of >10(5). This excellent device performance was realized under atmospheric conditions. The mu increased with an increase in temperature, and the FET performance was improved by exposure to air or O2 for a long time. This result implies that this device is an air (O2)-assisted FET. The FET characteristics are discussed on the basis of structural topography and the energy diagram of picene thin films.     

Synergistic Effects of Solvent Vapor Assisted Spin-coating and Thermal Annealing on Enhancing the Carrier Mobility of Poly(3-hexylthiophene) Field-effect Transistors

Poly(3-hexylthiophene)(P3 HT) thin films, obtained by normal spin-coating and solvent vapor assisted spin-coating(SVASP) before and after thermal annealing(TA), and the corresponding devices were prepared to unravel the microstructure-property relationship, which is of great importance for the development of organic electronics. When SVASP-TA films were used as the active layers of the organic field-effect transistors,a hole mobility up to 0.38 cm~2·V~(–1)·s~(–1) was achieved. This mobility was one of the highest values and one order of magnitude higher than that of the normal spin-coating films based transistors. The relationship between the microstructure and the device performance was fully investigated by UV-Vis absorption spectra, grazing incident X-ray diffraction(GIXD), and atomic force microscopy(AFM). The impressive mobility was attributed to the high crystallinity and ordered molecule packing, which stem from the synergistic effects of SVASP and thermal annealing.     

耐蚀Zn-Al合金材料的组合材料芯片方法优选

应用组合材料芯片方法, 通过离子束溅射法制备了全组分范围的Zn-Al薄膜样品阵列. 沉积得到的多层薄膜经370 ℃扩散处理2 h形成合金薄膜. 通过扫描俄歇能谱仪(AES)、X射线衍射仪(XRD)及扫描电子显微镜(SEM)对样品的成分、结构和形貌进行表征. 结果显示, 在低温退火后, 合金薄膜成分均匀, 结晶良好, 表面致密. 材料芯片上的样品在0.1 mol·L-1氯化钠溶液中的极化电阻测试结果表明, 对于全组分的Zn-Al合金薄膜, Al摩尔分数在87%附近的成分具有最高的极化电阻值.进一步的实验发现, 在83%-86%这一较宽的摩尔分数区间内, 极化电阻值均保持在105 Ω·cm-2以上, 比传统热镀锌镀层的极化电阻高1个数量级.     

含杂原子的并五苯类似物合成及场效应性能研究

以N,N'-二苯基-1,4-苯二胺为原料, 合成了含硫和氮杂原子的并五苯类似物, 用可见-紫外吸收光谱和电化学测试对这类化合物进行表征, 确定了其光学带隙及轨道能级, 与并五苯相比它们具有低的最高占用分子轨道能级. 得到了三苯并二噻嗪的单晶结构, 分子具有平面结构, 分子间具有强的π…π相互作用和N…S相互作用. 首次将该类并五苯类似物应用于有机薄膜场效应晶体管中, 器件显示好的场效应特性, 迁移率为0.01 cm²·V^-1·s^-1.     

纳米ZnO薄膜的制备及其可见光催化降解甲基橙

采用溶胶-凝胶方法制备ZnO透明溶胶, 在铝箔上涂膜后经500 ℃处理制得具有可见光响应的纳米ZnO薄膜光催化剂. 以甲基橙模拟有机污染物, 在可见光下研究了薄膜的降解性能, 结果表明, 用一片有效面积为200 cm2的ZnO/Al薄膜作为催化剂, 甲基橙的降解率达到96.3％, 比ZnO负载在玻璃上制得的ZnO/glass薄膜催化剂活性高得多. 采用扫描电镜与原子力显微镜对ZnO/Al薄膜制备条件进行了表征, 结果发现多孔ZnO/Al薄膜比致密ZnO/Al薄膜具有更高的活性, 实验制备的具有高活性的ZnO/Al薄膜颗粒平均直径为52.2 nm. 采用本方法制备的ZnO/Al薄膜是一种具有应用前景的, 能在可见光下降解有机物的有效光催化剂.