Thermal decomposition kinetics of polysilanes: Disilane,trisilane, and tetrasilane

The decomposition kinetics of disilane with added butadiene, trisilane both neat and with added butadiene, trimethylsilane or H₂, and normal and iso-tetrasilane both neat and in the presence of added butadiene are reported. Arrhenius parameters of the primary dissociation reactions are determined: A-factors suggest that polysilane decompositions (1) have similar intrinsic activation entropies (ΔS? ≈? 6.2 ± 5 e.u.) and (2) have activation energies which increase with increasing reaction endothermicities. Relative trapping efficiencies of SiH₄, Si₂H₆, Si₃H₈, C₄H₆, Me₃SiH, and H₂ toward SiH₂ and SiH₃SiH are also determined. Other results include the heat of formation of silylsilylene, ΔH ${}_{\text{°}}^{\text{f}}$ (SiH₃SiH) = 75.3 Kcal/mol, and the activation energy for 1,1-H₂ elimination from disilane (EH₂ = 57.8 kcal/mol).     

The reactions between negative hydrogen ions and silane

Contracted CI-calculations have been performed in order to find out the mechanisms of the reactions involved when negative hydrogen ions react with silane. There were initially severe problems to find a balanced basis set to describe the reactions including correlation, particularly for the choice of diffuse functions. Finally, in agreement with earlier calculations, SiH ₅ ^– was found to be more stable than SiH₄+H^– by 21 kcal/mol but less stable than SiH ₃ ^– and H₂ by 6 kcal/mol. A barrier in the S _N2 reaction SiH₄+H^– SiH₅ has previously been predicted by calculations, which was not confirmed by the present CI calculations. The lack of a barrier is in agreement with experimental evidence. Contrary to what is expected from the orbital symmetry rules, which predict two allowed pathways, SiH ₅ ^– does not dissociate easily to the lower lying SiH ₃ ^– + H₂. A barrier of 57 kcal/mol, which was very difficult to locate, was finally found. In order to explain the experimental observation of SiH ₃ ^– and the lack of observation of SiH ₅ ^– a different mechanism for the reaction SiH₄+H^– SiH ₃ ^– + H₂ is suggested. For a direct proton transfer a barrier of less than 10 kcal/mol is predicted.     

Ab initio chemical kinetics for reactions of H atoms with SiHx (x = 1–3) radicals and related unimolecular decomposition processes

Hydrogen atoms and SiH_x (x = 1–3) radicals coexist during the chemical vapor deposition (CVD) of hydrogenated amorphous silicon (a‐Si:H) thin films for Si‐solar cell fabrication, a technology necessitated recently by the need for energy and material conservation. The kinetics and mechanisms for H‐atom reactions with SiH_x radicals and the thermal decomposition of their intermediates have been investigated by using a high high‐level ab initio molecular‐orbital CCSD (Coupled Cluster with Single and Double)(T)/CBS (complete basis set extrapolation) method. These reactions occurring primarily by association producing excited intermediates, ¹SiH₂, ³SiH₂, SiH₃, and SiH₄, with no intrinsic barriers were computed to have 75.6, 55.0, 68.5, and 90.2 kcal/mol association energies for x = 1–3, respectively, based on the computed heats of formation of these radicals. The excited intermediates can further fragment by H₂ elimination with 62.5, 44.3, 47.5, and 56.7 kcal/mol barriers giving ¹Si, ³Si, SiH, and ¹SiH₂ from the above respective intermediates. The predicted heats of reaction and enthalpies of formation of the radicals at 0 K, including the latter evaluated by the isodesmic reactions, SiH_x + CH₄ = SiH₄ + CH_x, are in good agreement with available experimental data within reported errors. Furthermore, the rate constants for the forward and unimolecular reactions have been predicted with tunneling corrections using transition state theory (for direct abstraction) and variational Rice–Ramsperger–Kassel–Marcus theory (for association/decomposition) by solving the master equation covering the P,T‐conditions commonly employed used in industrial CVD processes. The predicted results compare well experimental and/or computational data available in the literature. © 2013 Wiley Periodicals, Inc.     

Ab Initio Chemical Kinetics for SiHx Reactions with Si2Hy (x = 1,2,3,4; y = 6,5,4,3; x + y = 7) under a‐Si:H CVD Condition

Gas‐phase reactions of SiH_x with Si₂H_y (x = 1,2,3,4; y = 6,5,4,3) species, respectively, which may coexist under chemical vapor deposition (CVD) conditions, have been investigated by means of ab initio molecular orbital and statistical theory calculations. Potential energy surface (PES) predicted at the CCSD(T)/CBS//B3LYP/6–311++G(3df,2p) level shows that these reactions take place primarily via trisilany radicals, n‐Si₃H₇ and i‐Si₃H₇. For example, SiH₂ can associate with Si₂H₅ producing n‐H₂SiSiH₂SiH₃ exothermically by 55.8 kcal/mol; SiH₃ can undergo addition to H₂SiSiH₂ to produce n‐Si₃H₇ or associate with H₃SiSiH barrierlessly forming i‐Si₃H₇; whereas SiH can insert into one of the Si─H bonds of Si₂H₆ to give excited n‐Si₃H₇. Similarly, H₂SiSiH and SiSiH₃ can undergo insertion reactions with SiH₄ producing n /i‐Si₃H₇ intermediates, respectively, to be followed by fragmentation to various smaller species. These processes are fully depicted in the complete PES. The predicted heats of formation of various species agree well with available thermochemical data. The rate constants and product branching ratios for the low‐energy channel products have been calculated for the temperature range 300–1000 K by variational RRKM (Rice–Ramsperger–Kassel–Macus) theory with Eckart tunneling corrections. The results may be employed for realistic kinetic modeling of the plasma‐enhanced chemical vapor deposition growth of a‐Si:H thin films under practical conditions.     

Sequential Barium‐Catalysed N−H/H−Si Dehydrogenative Cross‐Couplings: Cyclodisilazanes versus Linear Oligosilazanes

Starting from Ph₃SiH, the barium precatalyst Ba[CH(SiMe₃)₂]₂?(THF)₃ was used to produce the disilazane Ph₃SiN(Bn)SiPh₂NHBn ( 4 ) by sequential N?H/H?Si dehydrogenative couplings with BnNH₂ and Ph₂SiH₂. Substrate scope was extended to other amines and hydrosilanes. This smooth protocol gives quantitative yields and full chemoselectivity. Compound 4 and the intermediates Ph₃SiNHBn and Ph₃SiN(Bn)SiHPh₂ were structurally characterised. Further attempts at chain extension by dehydrocoupling of Ph₂SiH₂ with 4 instead resulted in cyclisation of this compound, forming the cyclodisilazane c‐(Ph₂Si‐NBn)₂ ( 5 ) which was crystallographically authenticated. The ring‐closure mechanism leading to 5 upon release of C₆H₆ was determined by complementary experimental and theoretical (DFT) investigations. Ba[CH(SiMe₃)₂]₂?(THF)₃ and 4 react to afford the reactive Ba{N(Bn)SiPh₂N(Bn)SiPh₃}₂, which was characterised in situ by NMR spectroscopy. Next, in a stepwise process, intramolecular nucleophilic attack of the metal‐bound amide on the terminal silicon atom generates a five‐coordinate silicate. It is followed by turnover‐limiting β‐C₆H₅ transfer to barium; this releases 5 and forms a transient [Ba]?Ph species, which undergoes aminolysis to regenerate [Ba]?N(Bn)SiPh₂N(Bn)SiPh₃. DFT computations reveal that the irreversible production of 5 through such a stepwise ring‐closure mechanism is much more kinetically facile (ΔG^≠=26.2 kcal mol^?1) than an alternative σ‐metathesis pathway (ΔG^≠=48.2 kcal mol^?1).     

Theoretical study of the molecular ions SiH−5 and SiH−3

Ab initio HF and Cl calculations were performed to determine the equilibrium geometry of SiH^?₅ and SiH^?₃, the barrier for internal rotation (SiH^?₅) and inversion (SiH^?₃) and the stability of SiH^?₅ and further to study the effect of electron correlation on reaction energies. The gaussian-type basis included d and f functions on Si and a p set on II. The D_3h structures of SiH^?₅ is lower in energy than the C_4v structure by 2.9(3.2) kcal/mol (corresponding HF results in parentheses). SiH^?₃ has C_3v structure, the inner-ion barrier computed is 26.2 (27.3) kcal/mol. SiH^?₅ turns out to be stable with respect to SiH₄ + H^? by 20.3 (13.8) kcal/mol, but it is unstable with respect to SiH^?₃ ← H₂ by 6.3 (5.6) kcal/mol. These results show that electron correlation has a small effect on barriers of inversion (SiH^?₃) or pseudorotation (SiH^?₅), but may have a pronounced effect on reaction energies even if all systems involved have closed shells. The correlation energy contributions are analyzed in terms of intrapair and interpair terms in order to get a better understanding of the influence of correlation on reaction and activation energies.     

Hydrosilylation Induced by N→Si Intramolecular Coordination: Spontaneous Transformation of Organosilanes into 1‐Aza‐Silole‐Type Molecules in the Absence of a Catalyst

Our attempts to synthesize the N→Si intramolecularly coordinated organosilanes Ph₂L¹SiH ( 1 a ), PhL¹SiH₂ ( 2 a ), Ph₂L²SiH ( 3 a ), and PhL²SiH₂ ( 4 a ) containing a CH?N imine group (in which L¹ is the C,N‐chelating ligand {2‐[CH?N(C₆H₃‐2,6‐iPr₂)]C₆H₄}^? and L² is {2‐[CH?N(tBu)]C₆H₄}^?) yielded 1‐[2,6‐bis(diisopropyl)phenyl]‐2,2‐diphenyl‐1‐aza‐silole ( 1 ), 1‐[2,6‐bis(diisopropyl)phenyl]‐2‐phenyl‐2‐hydrido‐1‐aza‐silole ( 2 ), 1‐tert‐butyl‐2,2‐diphenyl‐1‐aza‐silole ( 3 ), and 1‐tert‐butyl‐2‐phenyl‐2‐hydrido‐1‐aza‐silole ( 4 ), respectively. Isolated organosilicon amides 1 – 4 are an outcome of the spontaneous hydrosilylation of the CH?N imine moiety induced by N→Si intramolecular coordination. Compounds 1–4 were characterized by NMR spectroscopy and X‐ray diffraction analysis. The geometries of organosilanes 1 a – 4 a and their corresponding hydrosilylated products 1 – 4 were optimized and fully characterized at the B3LYP/6‐31++G(d,p) level of theory. The molecular structure determination of 1 – 3 suggested the presence of a Si?N double bond. Natural bond orbital (NBO) analysis, however, shows a very strong donor–acceptor interaction between the lone pair of the nitrogen atom and the formal empty p orbital on the silicon and therefore, the calculations show that the Si?N bond is highly polarized pointing to a predominantly zwitterionic Si⁺N^? bond in 1 – 4 . Since compounds 1 – 4 are hydrosilylated products of 1 a – 4 a , the free energies (ΔG₂₉₈), enthalpies (ΔH₂₉₈), and entropies (ΔH₂₉₈) were computed for the hydrosilylation reaction of 1 a – 4 a with both B3LYP and B3LYP‐D methods. On the basis of the very negative ΔG₂₉₈ values, the hydrosilylation reaction is highly exergonic and compounds 1 a – 4 a are spontaneously transformed into 1 – 4 in the absence of a catalyst.     

Kinetics and mechanism of the silane decomposition

The homogeneous gas-phase decomposition kinetics of silane has been investigated using the single-pulse shock tube comparative rate technique (T = 1035–1184?K, P_total ≈? 4000 Torr). The initial reaction of the decomposition SiH₄ \documentclass{article}\pagestyle{empty}\begin{document}$ {\rm SiH}_{\rm 4} \mathop \to \limits^1 {\rm SiH}_{\rm 2} + {\rm H}_{\rm 2} $\end{document} SiH₂ + H₂ is a unimolecular process in its pressure fall-off regime with experimental Arrhenius parameters of logk₁ (sec^?1) = 13.33 ± 0.28–52,700 ± 1400/2.303RT. The decomposition has also been studied at lower temperatures by conventional methods. The results confirm the total pressure effect, indicate a small but not negligible extent of induced reaction, and show that the decomposition is first order in silane at constant total pressures. RRKM-pressure fall-off calculations for four different transition-state models are reported, and good agreement with all the data is obtained with a model whose high-pressure parameters are logA₁ (sec^?1) = 15.5, E_1(∞) = 56.9 kcal, and ΔE^0±₀(1) = 55.9 kcal. The mechanism of the decomposition is discussed, and it is concluded that hydrogen atoms are not involved. It is further suggested that silylene in the pure silane pyrolysis ultimately reacts with itself to give hydrogen: 2SiH₂ → (Si₂H₄)* → (SiH₃SiH)* → Si₂H₂ + H₂. The mechanism of H ? D exchange absorbed in the pyrolysis of SiD₄-hydrocarbon systems is also discussed.     

The structure and energy of SiH+5. comparisons with CH+5 and BH5

Differences between SiH⁺₅ and CH⁺₅ are more significant than the similarities. The proton affinity of SiH₄ exceeds than of CH₄ by ≈25 kcal/mol. but the heat of hydrogenation of SiH⁺₃ is smaller than that of CH⁺₃ by nearly the same amount. Like CH⁺₅ the C₅ structures of SiH⁺₅ are preferred, but SiH⁺₅ is best regarded as a weaker SiH⁺₃—H₂ complex. D_3h, C_2v, and C_4v forms are much higher in energy and SiH⁺₅ should not undergo hydrogen scrambling (pseudorotation) readily, as does CH⁺₅ The neutral BH₅ is only weakly bound toward loss H₂, and the D_3h. C_2v, and C_4v forms are also high in energy. The contral-atom electronegativities, C⁺ > B > Si⁺, control this behavior. The electronegativities also determine the ability to bear positive charges. Thermodynamically. SiH⁺₅ and SiH⁺₃ are more stable than CH⁺₅ and CH⁺₃, respectively; hydride transfer occurs from SiH₄ to CH⁺₃ and proton transfer from CH⁺₅ to SiH₄.     

Bildung siliciumorganischer Verbindungen. 111. Die Hydrierung Si-chlorierter,C-spiroverbrückter 2,4-Disilacyclobutane mit LiAlH4 und iBu2AlH. Der Zugang zum Si8C3H20

Formation of Organosilicon Compounds. 111. The Hydrogenation of Si-chlorinated, C-spiro-linked 2,4-Disilacyclobutanes with LiAlH₄ or iBu₂AlH. The Access to Si₈C₃H₂₀ The hydrogenation of Si-chlorinated, C-spiro-linked 2,4-disilacyclobutanes containing C(SiCl₃)₂ terminal groups with LiAlH₄ in Et₂O proceeds under complete cleavage of the fourmembered rings and under elimination of one SiH₃ group. Such, Si₈C₃Cl₂₀ 4 forms (H₃Si)₂CH? SiH₂? CH(SiH₃)? SiH₂? CH(SiH₃)₂ 4 α, and even Si₈C₃H₂₀ 4a with LiAlH₄ forms 4 α. The hydrogenation of related compounds containing however CH(SiCl₃) terminal groups similarly proceeds under ring cleavage but no SiH₃ groups are eliminated. Such, (Cl₃Si)CH(SiCl₂)₂CH(SiCl₃) 41 forms (H₃Si)₂CH? SiH₂? CH₂(SiH₃) 41 α. However, in reactions with iBu₂AlH in pentane neither the disilacyclobutane rings are cleaved nor are SiH₃ groups eliminated. Only by this method Si₈C₃H₂₀ is accessible from 4 , Si₆C₂H₁₆ 3a from Si₆C₂Cl₁₆ 3 and Si₄C₂H₁₂ 41a from 41 . C(SiCl₃)₄ cleanly produces C(SiH₃)₄. Based on the knowledge about the different properties of LiAlH₄ and iBu₂AlH in hydrogenation reactions of disilacyclo-butanes it was possible to elucidate the composition and the structures of the hydrogenated derivatives of the product mixture from the reaction of MeCl₂Si? CCl₂? SiCl₃ with Si(Cu) [1] and to trace them back to the initially formed Si chlorinated disilacyclobutanes Si₆C₂Cl₁₅Me 34 , Si₆C₂Cl₁₄Me₂ 35 , Si₈C₃Cl₁₉Me 36 and Si₈C₃Cl₁₈Me₂ 37 . Compound 4a forms colourless crystals of space group P1 with a = 799.7(6), b = 1263.6(12), c = 1758.7(14) pm, α = 103.33(7)°, β = 95.28(6)°, γ = 105.57(7)° and Z = 4.     

Bonding and correlation analysis of various Si2CO isomers on the potential energy surface

At various levels of theory, singlet and triplet potential energy surfaces (PESs) of Si₂CO, which has been studied using matrix isolation infrared spectroscopy, are investigated in detail. A total of 30 isomers and 38 interconversion transition states are obtained at the B3LYP/6‐311G(d) level. At the higher CCSD(T)/6‐311+G(2d)//QCISD/6‐311G(2d)+ZPVE level, the global minimum ¹1 (0.0 kcal/mol) corresponds to a three‐membered ring singlet O‐cCSiSi (¹A′). On the singlet PES, the species ¹2 (0.2 kcal/mol) is a bent SiCSiO structure with a ¹A′ electronic state, followed by a three‐membered ring isomer Si‐cCSiO (¹A′) ¹3 (23.1 kcal/mol) and a linear SiCOSi ¹4 (¹Σ⁺) (38.6 kcal/mol). The isomers ¹1, ¹2, ¹3 , and ¹4 possess not only high thermodynamic stabilities, but also high kinetic stabilities. On the triplet PES, two isomers ³1 (³B₂) (18.8 kcal/mol) and ³7 (³A″) (23.3 kcal/mol) also have high thermodynamic and kinetic stabilities. The bonding natures of the relevant species are analyzed. The similarities and differences between C₃O, C₃S, SiC₂O, and SiC₂S are discussed. The present results are also expected to be useful for understanding the initial growing step of the CO‐doped Si vaporization processes. © 2008 Wiley Periodicals, Inc. Int J Quantum Chem, 2009     

Bridged structures in multiply bonded silicon compounds: Disilyne,protonated disilyne and disilene

Ab initio SCF and electron correlation calculations are reported for the singlet ground state of the title compounds. These calculations confirm earlier findings that non-planar bridged Si₂H₂ is the most stable structure. For protonated disilyne (Si₂H³⁺) a bridged D_3h structure is the global mimimum. Two bridged structures of C_2v and C_2h symmetry are found in the case of disilene (Si₂H₄) which are only 14–17 kcal/mol above the D_2h structure.     

SiH+5 and the proton affinity of monosilane

Tandem mass spectrometric studies show that SiH⁺₅ is formed in bimolecular reactions of SiH₄ and NH⁺₂, C₂H⁺₃, C₂H⁺₆ and C₃H⁺₈ ions. The dependence of the reaction cross sections on ion energy indicates the formation of SiH⁺₅ from NH⁺₂, C₂H⁺₃, and C₂H⁺₆ to be exothermic reactions, while formation from C₃H⁺₈ is endothermic. Using known thermochemical data, these facts permit the assignment of 150 and 156 kcal/mole to the lower and upper limits of the proton affinity of monosilane.     

Reactions of trimethylgallium with silicon hydrides,germane and diborane

Methylation of SiH₄, MeSiH₃, Si₂H₆, GeH₄ and B₂H₆, but not of PH₃ or AsH₃, was observed during reaction (230–324°C) with GaMe₃. The products from the SiH₄ and Si₂H₆ reactions were MeSiH₃, Me₂SiH₂ and Me₃SiH. The GeH₄-derived products were similar, with Me₄Ge also being formed. The only methylated products from B₂H₆ was BMe₃. The silane reactions were surface-catalyzed (presumably by surface hydroxyl groups), while those of GeH₄ and B₂H₆ may have occurred via gas-phase free radical processes.     

A theoretical study of protonation of triatomic silicon–carbon compounds

Ab initio molecular orbital methods are employed to study the low-lying states of C₃H⁺, SiC₂H⁺, Si₂CH⁺, and Si₃H⁺. Special attention is paid to a comparative study between C₃H⁺ and Si₃H⁺. In both cases a ³B₂ state is found to lie the lowest at the HF level, although inclusion of correlation effects favor a linear structure (¹Σ⁺ state) for C₃H⁺, which lies 25 kcal/mol below the ³B₂ state at the MP 4 level, and a bent structure (¹A′ state) for Si₃H⁺, which lies just 2 kcal/mol below the ³B₂ state. The proton affinities of C₃, SiC₂, Si₂C, and Si₃ are estimated at different levels of theory. Both protonation at carbon and silicon atoms are considered for SiC₂ and Si₂C. It is found that C₃ comparatively has a low proton affinity. On the other hand, Si₃ has a relatively high proton affinity compared with the protonation at silicon atom for both SiC₂ and Si₂C. These results are discussed on the basis of electronic structure arguments.     

The decomposition kinetics of disilane and the heat of formation of silylene

The static system decomposition kinetics of disilane (\documentclass{article}\pagestyle{empty}\begin{document}${\rm Si}_{\rm 2} {\rm H}_{\rm 6} \mathop {\longrightarrow}\limits^1 {\rm SiH}_{\rm 2} + {\rm SiH}_{\rm 4}$\end{document}, 538–587 K and 10–500 Torr), are reported. Reaction rate constants are weakly pressure dependent, and best fits of the data are realized with RRKM fall-off calculations using logA_1,∞ = 15.75 and E_1,∞ = 52,200 cal. These parameters yield AH_f⁰(SiH₂)₂₉₈ = (63.5 ? E_{b, c}) kcal mol,^?1 where E_{b, c} is the activation energy for the back reaction at 550 K, M = 1 std state. Five other silylene heat-of-formation values (ranging from 63.9 – E_{b, c} to 66.0 - E_{b, c} kcal mol^?1) are deduced from the reported decomposition kinetics of trisilane and methyldisilane, and from the reported absolute and relative rate constants for silylene insertions into H₂ and SiH₄. Assuming E_{b, c} = 0, an average value of ΔH_f⁰(SiH₂) = 64.3 ± 0.3 kcal mol^?1 is obtained. Also, a recalculation of the activation energy for silylene insertion into H₂, based in part on the new disilane decomposition Arrhenius parameters, gives (0.6 + E_{b, c}) kcal mol^?1, in good agreement with theoretical calculations.     

Gas‐phase reactions of SiHn+ (n = 1,2) with NF3: A computational investigation on the detailed mechanistic aspects

The mechanism of the gas‐phase reactions of SiH_n⁺ (n = 1,2) with NF₃ were investigated by ab initio calculations at the MP2 and CAS‐MCSCF level of theory. In the reaction of SiH⁺, the kinetically relevant intermediates are the two isomeric forms of fluorine‐coordinated intermediate HSi‐F‐NF₂⁺. These species arise from the exoergic attack of SiH⁺ to one of the F atoms of NF₃ and undergo two competitive processes, namely an isomerization and subsequent dissociation into SiF⁺ + HNF₂, and a singlet‐triplet crossing so to form the spin‐forbidden products HSiF⁺ + NF₂. The reaction of SiH₂⁺ with NF₃ involves instead the concomitant formation of the nitrogen‐coordinated complex H₂Si‐NF₃⁺ and of the fluorine‐coordinated complex H₂Si‐F‐NF₂⁺. The latter isomer directly dissociates into NF₂⁺ + H₂SiF, whereas the former species preferably undergoes the passage through a conical intersection point so to form a H₂SiF‐NF₂⁺ isomer, which eventually dissociates into H₂SiF⁺ and NF₂. © 2012 Wiley Periodicals, Inc.     

A study of aromatic three membered rings

The resonance energies (REs) of neutral three membered ring analogs of the cyclopropenyl cation, computed using block localized wave function (BLW) methods, reveal considerable variations. The RE's of cyclopropenes substituted with exocyclic double bonded groups C?X, (X = O, NH, CH₂, S, PH, SiH₂) increase with the electronegativity of X in the same row (SiH₂ < PH < S and CH₂ < NH < O). The extra cyclic resonance energies (ECREs) (an energetic measure of aromaticity based on comparisons with the RE's of acyclic models) of these derivatives range from +10.5 kcal/mol for cyclopropenone (X = O) (somewhat aromatic; the benzene ECRE is 29.3 kcal/mol) to ?2.4 kcal/mol (slightly antiaromatic) for X = SiH₂. Additional disubstitution of the C?C double bond by X′ groups (X′ = CH₃, NH₂, OH, SiH₃, PH₂, SH) increases the REs considerably, but has only small effects on the ECREs. Even the ECRE of deltic acid (X = O, X′ = OH) is only increased to +13.3 kcal/mol. The conclusion based on ECRE's, that all 12 of the three membered rings are only marginally aromatic/antiaromatic, is supported by the satisfactorily plot (R² = 0.92) of ECRE against values of NICS(0)_πzz (a superior nucleus chemical independent shift magnetic index of aromaticity), which range only from ?6.1 ppm (diatropic) for deltic acid (cf., ?35.5 ppm for benzene and ?14.2 ppm for the parent cyclopropenium ion) to +8.9 ppm (paratropic) for the silicon derivative, X = SiH₂, X′ = SiH₃. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem, 2011     

ab initio calculations and thermochemical analysis on C1 atom abstractions of chlorine from chlorocarbons and the reverse alkyl abstractions: Cl2 + R· ↔ Cl· + RCl

Thermodynamic properties (ΔH°_f(298), S°₍₂₉₈₎ and Cp(T) from 300 to 1500 K) for reactants, adducts, transition states, and products in reactions of CH₃ and C₂H₅ with Cl₂ are calculated using CBSQ//MP2/6‐311G(d,p). Molecular structures and vibration frequencies are determined at the MP2/6‐311G(d,p), with single‐point calculations for energy at QCISD(T)/6‐311 + G(d,p), MP4(SDQ)/CbsB4, and MP2/CBSB3 levels of calculation with scaled vibration frequencies. Contributions of rotational frequencies for S°₍₂₉₈₎ and Cp(T)'s are calculated based on rotational barrier heights and moments of inertia using the method of Pitzer and Gwinn [1]. Thermodynamic parameters, ΔH°_f(298), S°₍₂₉₈₎, and C_P(T), are evaluated for C₁ and C₂ chlorocarbon molecules and radicals. These thermodynamic properties are used in evaluation and comparison of Cl₂ + R· → Cl· + RCl (defined forward direction) reaction rate constants from the kinetics literature for comparison with the calculations. Data from some 20 reactions in the literature show linearity on a plot of Ea_fwd vs. ΔH_rxn,fwd, yielding a slope of (0.38 ± 0.04) and intercept of (10.12 ± 0.81) kcal/mole. A correlation of average Arrhenius preexponential factor for Cl· + RCl → Cl₂ + R· (reverse rxn) of (4.44 ± 1.58) × 10¹³ cm³/mol‐sec on a per‐chlorine basis is obtained with Ea_Rev = (0.64 ± 0.04) × ΔH_rxn,Rev + (9.72 ± 0.83) kcal/mole, where Ea_Rev is 0.0 if ΔH_rxn,Rev is more than 15.2 kcal/mole exothermic. Kinetic evaluations of literature data are also performed for classes of reactions. Ea_fwd = (0.39 ± 0.11) × ΔH_rxn,fwd + (10.49 ± 2.21) kcal/mole and average A_fwd = (5.89 ± 2.48) × 10¹² cm³/mole‐sec for hydrocarbons: Ea_fwd = (0.40 ± 0.07) × ΔH_rxn,fwd + (10.32 ± 1.31) kcal/mole and average A_fwd = (6.89 ± 2.15) × 10¹¹ cm³/mole‐sec for C₁ chlorocarbons: Ea_fwd = (0.33 ± 0.08) × ΔH_rxn,fwd + (9.46 ± 1.35) kcal/mole and average A_fwd = (4.64 ± 2.10) × 10¹¹ cm³/mole‐sec for C₂ chlorocarbons. Calculation results on the methyl and ethyl reactions with Cl₂ show agreement with the experimental data after an adjustment of +2.3 kcal/mole is made in the calculated negative Ea's. © 2000 John Wiley & Sons, Inc. Int J Chem Kinet 32: 548–565, 2000     

The kinetics and mechanism of the shock induced gas phase decomposition of ethylsilane

The decomposition kinetics of ethylsilane under shock tube conditions (P_T ca. 3100 torr, T ? 1080–1245 K), both in the absence and presence of silylene trapping agents (butadiene and acetylene) are reported. Arrhenius parameters under maximum butadiene inhibition are: log k(C₂H₅SiH₃) = 15.14-64,769 ± 1433 cal/2.303 RT; log k(C₂H₅SiD₃) = 15.29-66,206 ± 1414/2.303 RT. The uninhibited reaction is subject to silylene induced decomposition (63% lowest T -- 24% highest T). Major reaction products are ethylene and hydrogen, consistent with two dominant primary dissociation reactions: C₂H₅SiD₃ → C₂H₅SiD + D₂, ? ? 0.66; C₂H₅SiD₃ → CH₃CH = SiD₂ + HD, ? ? 0.30. Minor products suggest several other less important primary processes: alkane elimination, ? ?0.02, and free-radical production via simple bond fission, ? ?0.02. An upper limit for the activation energy of the decomposition, C₂H₅SiH → C₂H₄ + SiH₂, of E < 30 ± 4 kcal is established, and speculations on the mechanism of this decomposition (concerted or stepwise) with conclusions in favor of the stepwise path are made. Computer modeling studies for the reaction both in the absence and presence of butadiene are shown to be in good agreement with the experimental observations.