Chemical binding and electronic structure of fluorite-like zirconium oxynitrides

The electronic energy structures offluorite-like (F) zirconium dioxynitrides F-ZrO_2-xN_y in Zr-O-N systems were studied by the linear muffin-tin orbital-tight binding (LMTO-TB) ab initio band structure method. The electronic structures of defects (nitrogen atoms and anion vacancies) and their effect on the band structure of F-ZrO₂ are discussed; defect clustering and probable reasons for structural ordering in the F-ZrO_2-xN_y phases are analyzed. Interatomic interaction indices are estimated in terms of Hiickel’s semi-empirical band structure method. The cubic structure of zirconium dioxynitrides is stabilized by the formation of new bonding hybrid Zrd-Np states; the role of anion vacancies reduces to providing the optimal population of these states. Translated from Zhurnal Strukturnoi Khimii, Vol. 41, No. 4, pp. 679-686, July-August, 2000 This work was supported by RFFR grant No. 98-03-32512.     

X-Ray Spectra and Electronic Structure of 3C SiC and BN Based Solid Solutions

The local coherent potential approximation is used in the framework of multiple-scattering theory to calculate the electronic energy structure of solid solutions of silicon carbide Si_1-xCR_x and boron nitride BN_1-xR_x and B_1-xNR_x (x = 0-0.75, R = C, Al, Ti) in a diamond-like modification. The total and partial densities of states are calculated for each atom in the solid solutions. The crystal potential is evaluated in an MT approximation. The lattice parameter is determined by Vegard's rule. The electronic energy structures of the solid solutions are compared with each other and with binary analogs in the framework of one approximation. The calculated partial densities of states are compared with the experimental X-ray spectra of silicon in the compounds. The calculation of the partial charges of atoms at the top of the valence band showed that the charge transfer (0.35 e) from boron to nitrogen in binary 3C BN changes sign in B_0.75NC_0.25. In the latter system, nitrogen donates 0.19 e to boron, and carbon acts as a donor for the electronic configurations of boron and nitrogen. An electronic structure analysis of the solid solutions indicates that the quasicore resonance states inherent in the binary compounds are delocalized, probably because of the weakening of chemical binding in the solid solutions.     

Molecular engineering of CxNy: Topologies,electronic structures and multidisciplinary applications

As a class of metal-free two-dimensional (2D) semiconductor materials, polymeric carbon nitrides have attracted wide attention recently due to its facile regulation of the molecular and electronic structures, availability in abundance and high stability. According to the different ratios of C and N atoms in the framework, a series of C_xN_y materials have been successfully synthesized by virtue of various precursors, which further triggers extensive investigations of broad applications ranging from sustainable photocatalytic reactions and highly sensitive optoelectronic biosensing. In view of topological structures on their electronic structures and material properties, the as-reported C_xN_y could be generally classified into two main categories with three- or six-bond-extending frameworks. Owing to the effective n→π* transition in most C_xN_y materials, the relative energy level of the lone-pair electrons on N atoms is high, which thus endows the materials with the capability of visible light absorption. Meanwhile, the different repeating units, bridging groups and defect sites of these two kinds of C_xN_y allow them to effectively drive a diverse of promising applications that require specific electronic, interfacial and geometric properties. This review paper aims to summarize the recent progress in topological structure design and the relevant electronic band structures and striking properties of C_xN_y materials. In the final part, we also discuss the existing challenges of C_xN_y and outlook the prospect possibilities.     

Crystal Structure and Property of Perovskite-Type Oxides Containing Ion Vacancy

Studies on the role of oxygen vacancy in structural change of nonstoichiometric perovskites and a property of oxygen-deficient perovskite-related K₂NiF₄ compounds are reviewed.The structural changes on which the authors focused are cation ordering and lattice distortion. The relationship between the distortion and oxygen vacancy was investigated by comparing the structures of Sr₂(Sr_1-xM_x)TaO_6-d (M = Ca²⁺ and Nd³⁺) solid solutions. It was found that distortion of a perovskite-type lattice decreased with an increasing amount of oxygen vacancies. In order to investigate the relationship between the cation ordering on octahedral sites and oxygen vacancy, structures of stoichiometric Sr_2-xLa_xCo_1-yTa_1+yO₆ and oxygen-deficient Sr_2-xLa_xMg_1-yTa_1+yO_6-d solid solutions were compared. The authors' work reveals that the cation ordering affects the amount of oxygen vacancies in addition to cation charge and size.     

X-Ray Photoelectron Spectra and Electronic Structure of Solid Solutions Based on Cubic Boron Nitride

The electronic energy structure of substitution solid solutions based on boron nitride B _1-x NR _x and BN _1-x R_x (R = C, O) (x=0.25) in a diamond-like modification of ZnS type has been investigated by the local coherent potential method in terms of multiple-scattering theory. The total and partial densities of states were calculated for each element in a solid solution. The crystalline potential was calculated using an MT approximation. The lattice parameter was chosen based on X-ray diffraction data for c-BN: 0.3615 nm. The electronic energy structures of the solid solutions and binary c-BN are compared in the framework of a single approximation. The calculated partial densities of states are compared with the experimental X-ray emission and photoelectron spectra of boron, nitrogen, and oxygen in these compounds. The calculated partial charges of electrons at the top of the valence band show that charge transfer from boron to nitrogen takes place in the solid solutions. An analysis of the electronic structures of the solid solutions of boron nitride indicates that the quasicore resonances inherent in binary c-BN are delocalized and that chemical bonding in the solid solutions of boron nitride is weakened.     

Electronic structures of YBa2Cu3OY doped by La

Based on the EHMO approach, the band structures for the Y? Ba? Cu? O superconductors doped by La were calculated. The influence of the partial substitutions of La for Y and Ba in YBa₂CU₃O_y on its electronic structures was investigated. The results demonstrate that the La doping at the Ba site has a great effect on the electronic structures of the Y? Ba? Cu? O superconductors, whereas the change in the band structures caused by the La doping at the Y site is very small. The increase in the oxygen content caused by the La doping results in an increase in the densities of states at E_f, N(E_f), for La_1+x Ba_2?xCu₃O_y, but the increase in N(E_f) cannot compensate the decrease caused by the La doping at the Ba site. In addition, the 2D Cu? O planes are much more sensitive to the change in N(E_f) than are the 1D Cu? O ribbons, which implies an important role of the 2D Cu? 0 planes in the Y? Ba? Cu? O superconducting system, regardless of whether La substitutes for Y or for Ba. © 1995 John Wiley & Sons, Inc.     

Effect of Nitrogen Substitution in V2O3 on the Metal–Insulator Transition

The effect of N‐doping on the paramagnetic–antiferromagnetic transition associated with the metal–insulator (M–I) transition of V₂O₃ at 150 K has been studied in bulk samples as well as in nanosheets. The magnetic transition temperature of V₂O₃ is lowered to ～120 K in the N‐doped samples. Electrical resistivity data also indicate a similar lowering of the M–I transition temperature. First‐principles DFT calculations reveal that anionic (N) substitution and the accompanying oxygen vacancies reduce the energy of the high‐temperature metallic corundum phase relative to the monoclinic one leading to the observed reduction in Nèel temperature. In the electronic structure of N‐substituted V₂O₃, a sub‐band of 2p states of trivalent anion (N) associated with its strong bond with the vanadium cation appears at the top of the band of O(2p) states, the 3d‐states of V being slightly higher in energy. Its band gap is thus due to crystal field splitting of the degenerate d‐orbitals of vanadium and superexchange interaction, which reduces notably (ΔE_g=?0.4 eV) due to their hybridization with the 2p states of nitrogen. A weak magnetic moment arises in the monoclinic phase of N‐substituted V₂O₃ with O‐vacancies, with a moment of ?1 μ_B/N localized on vanadium atoms in the vicinity of oxygen vacancies.     

Probing the Electronic Structure and Photoactivation Process of Nitrogen‐Doped TiO2 Using DRS,PL, and EPR

The electronic structure and photoactivation process in N‐doped TiO₂ is investigated. Diffuse reflectance spectroscopy (DRS), photoluminescence (PL), and electron paramagnetic resonance (EPR) are employed to monitor the change of optical absorption ability and the formation of N species and defects in the heat‐ and photoinduced N‐doped TiO₂ catalyst. Under thermal treatment below 573 K in vacuum, no nitrogen dopant is removed from the doped samples but oxygen vacancies and Ti³⁺ states are formed to enhance the optical absorption in the visible‐light region, especially at wavelengths above 500 nm with increasing temperature. In the photoactivation processes of N‐doped TiO₂, the DRS absorption and PL emission in the visible spectral region of 450–700 nm increase with prolonged irradiation time. The EPR results reveal that paramagnetic nitrogen species (N_s^.), oxygen vacancies with one electron (V_o^.), and Ti³⁺ ions are produced with light irradiation and the intensity of N_s^. species is dependent on the excitation light wavelength and power. The combined characterization results confirm that the energy level of doped N species is localized above the valence band of TiO₂ corresponding to the main absorption band at 410 nm of N‐doped TiO₂, but oxygen vacancies and Ti³⁺ states as defects contribute to the visible‐light absorption above 500 nm in the overall absorption of the doped samples. Thus, a detailed picture of the electronic structure of N‐doped TiO₂ is proposed and discussed. On the other hand, the transfer of charge carriers between nitrogen species and defects is reversible on the catalyst surface. The presence of oxygen‐vacancy‐related defects leads to quenching of paramagnetic N_s^. species but they stabilize the active nitrogen species N_s^?.     

Tuning thermal stability and electronic properties of germanium oxide on Ge(001) surface with the incorporation of nitrogen

The application of germanium as a channel material of transistors in near future requires an improved understanding of the interface between germanium and its potential passivation layer. In this study, we study effects of nitrogen incorporation on the thermal stability and electronic properties of GeO_xN_y/Ge interface by using high‐resolution X‐ray photoemission spectroscopy. We find that with the increasing nitrogen concentration in the GeO_xN_y films, the thermal stability can be increased, while the valence band offset with the Ge(001)substrate is decreased. First‐principles calculations further suggest that the unpaired p orbitals of nitrogen atoms induce electronic states near valence band edge, contributing to the reduction of the valence band offset. Our results provide a possibility to tune electronic and thermal properties of GeO_xN_y/Ge interface by controlling nitrogen concentrations during the growth.     

Thermodynamic Quantities and Defect Structure of La0.6Sr0.4Co1−yFeyO3−δ(y=0–0.6) from High-Temperature Coulometric Titration Experiments

The partial energies and entropies of O₂in perovskite-type oxides La_0.6Sr_0.4Co_1−yFe_yO_3−δ(y=0, 0.1, 0.25, 0.4, 0.6) were determined as a function of nonstoichiometryδby coulometric titration of oxygen in the temperature range 650–950°C. An absolute reference value ofδwas obtained by thermogravimetry in air. The nonstoichiometry at a given oxygen pressure and temperature decreases with iron contenty. At low nonstoichiometries the oxygen chemical potential decreases withδ. The observed behavior can be interpreted by assuming random distribution of oxygen vacancies, an electronic structure with both localized donor states on Fe, and a partially filled itinerant electron band, of which the density of states at the Fermi level scales with the Co content. The energy of the Fe states is close to the energy at the Fermi level in the conduction band. The observed trends of the thermodynamic quantities can be interpreted in terms of the itinerant electron model only when the iron content is small. At high values ofδthe chemical potential of O₂becomes constant, indicating partial decomposition of the perovskite phase. The maximum value ofδat which the compositions are single-phase increases with temperature.     

Study of iron-containing carbon-supported catalysts for oxidative decomposition of hydrogen sulfide: The activity—structure relationship

Clusters of nonstoichiometric magnetite Fe₃O_4+δ and pyrrhotite Fe_1-xS were shown to be the active structures of iron-containing carbon-supported catalysts for oxidative decomposition of hydrogen sulfide. A model of the surface active centers is discussed in terms of the anion vacancies participating in the reaction. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 1 pp. 86–90, January 1997     

Enhanced visible light photocatalytic activity in N-doped edge- and corner-truncated octahedral Cu2O

Edge- and corner-truncated octahedral Cu₂O is successfully synthesized using an aqueous mixture of CuCl₂, sodium dodecyl sulfate, NaOH, and NH₂OH₃·HCl. Cu₂O_1-xN_x(150 °C, 30 min) samples are synthesized by nitridation of Cu₂O using an ammonothermal process. Cu retains a formal valence state through and beyond the nitridation process. N concentration in this sample is 1.73 at%, out of which 1.08 at% is substitutional in nature. Photocatalytic activity of Cu₂O_1-xN_x(150 °C, 30 min) sample is investigated and compared to that of pristine edge- and corner-truncated octahedral Cu₂O. Results show that Cu₂O_1-xN_x(150 °C, 30 min) sample with dominant {110} facets has a higher photocatalytic activity than the pristine Cu₂O material. Higher surface energy and a greater density of the “Cu” dangling bonds on {110} facets of edge- and corner-truncated octahedral Cu₂O_1-xN_x is the plausible reason for the observed optimum catalytic activity. Furthermore defect states induced by nitridation results in improved visible light adsorption. And also the band edge states changes which brought about by N doping. This is an interesting result since it bypasses the usual challenge faced by pristine Cu₂O which have band edge states between which transitions are normally forbidden. Selective radical quenching experiments suggest that photocatalytic activity of Cu₂O_1-xN_x is due to formation of hydroxyl radicals in water, subsequent to photogeneration of charge carriers in the photocatalyst.     

The Binary Group 4 Azides [PPh4]2[Zr(N3)6] and [PPh4]2[Hf(N3)6]

The binary zirconium and hafnium polyazides [PPh₄]₂[M(N₃)₆] (M=Zr, Hf) were obtained in near quantitative yields from the corresponding metal fluorides MF₄ by fluoride–azide exchange reactions with Me₃SiN₃ in the presence of two equivalents of [PPh₄][N₃]. The novel polyazido compounds were characterized by their vibrational spectra and their X‐ray crystal structures. Both anion structures provide experimental evidence for near‐linear M‐N‐N coordination of metal azides. The species [M(N₃)₄], [M(N₃)₅]^? and [M(N₃)₆]^2? (M=Ti, Zr, Hf) were studied by quantum chemical calculations at the electronic structure density functional theory and MP2 levels.     

Role of oxygen content in electronic structures of Ba0.6K0.4BiO3–δ

The band structure calculations on the K-doped superconductor Ba_0.6K_0.4BiO_3–δ were carried out, and the effect of the oxygen content on its electronic structures was studied in the present work. The results show that the variation in the oxygen content caused by the partial substitution of K for Ba has a great effect on its electronic structure. The oxygen vacancies cause the saddle point singularity to be displaced gradually as the oxygen content is decreased, whereas the band structure is only translated a little and remains unchanged in shape, which reflects the non-rigid-bandlike behavior of Ba_0.6K_0.4BiO_3–δ in the presence of the oxygen vacancies. When the saddle point singularity is displaced and lies at the Fermi level E_f, the total density of states at E_f, N(E_f), has the highest value which is twice as large as that of the Ba_0.6K_0.4BiO₃ compound without the oxygen vacancies. These results reveal the important role of the oxygen content in the Ba–K–Bi–O superconducting system. © 1997 John Wiley & Sons, Inc. Int J Quant Chem 64 : 703–710, 1997     

Electronic structures of superconductors YBa2Cu3−x M x O y (M=Sn,Ni)

Based on the EHMO approach, the energy band structures for superconductors YBa₂Cu_3–x Sn _x O _y (y>7) and YBa₂Cu_3–x Ni _x O_y (y<7) were calulated in the present paper. The influence of the cation doping at the Cu site in the unit cell and the oxygen content on their electronic structures was studied. The results showed that the cation doping at the Cu site resulted in the great decreases in the bandwidths of the broad anisotropic Cu-O bands and the densities of states. In YBa₂Cu_3–x Sn _x O _y , however, these decreases are compensated by the increase in the oxygen content caused by the Sn-doping, which results in a small change in the total densities of states. For YBa₂Cu_3–x Ni _x O _y , the effect of the doping on its electronic structures in dominant. The Ni-doping, therefore, results in a great change in the electronic structures. In addition, the study on the projected densities of states of the Ni-doped system revealed that the 2D Cu-O planes in the Y-Ba-Cu-O system played a dominant role in superconductivity.     

Electronic structure and chemical bonding in nonstoichiometric zirconium nitrides

X-ray emission spectra were taken and band calculations using the Green function LMTO method and cluster calculations using the discrete variational X method were carried out for the electronic structure and chemical bonding parameters for nonstoichiometric zirconium nitrides containing metallic and metalloid vacancies. The existence of structural defects leads to a redistribution of the occupancies of the major sub-bands of the nitride valence spectrum and the formation of a new group of states between the p-d- and d-like bands of ZrN_1.0.Institute of Chemistry, Urals Branch, Academy of Sciences of the USSR. Translated from Zhurnal Strukturnoi Khimii, Vol. 30, No. 5, pp. 82–89, September–October, 1989.     

Thermodynamic Quantities and Defect Structure of La0.6Sr0.4Co1−yFeyO3−δ(y=0–0.6) from High-Temperature Coulometric Titration Experiments

The partial energies and entropies of O₂in perovskite-type oxides La_0.6Sr_0.4Co_1−yFe_yO_3−δ(y=0, 0.1, 0.25, 0.4, 0.6) were determined as a function of nonstoichiometryδby coulometric titration of oxygen in the temperature range 650–950°C. An absolute reference value ofδwas obtained by thermogravimetry in air. The nonstoichiometry at a given oxygen pressure and temperature decreases with iron contenty. At low nonstoichiometries the oxygen chemical potential decreases withδ. The observed behavior can be interpreted by assuming random distribution of oxygen vacancies, an electronic structure with both localized donor states on Fe, and a partially filled itinerant electron band, of which the density of states at the Fermi level scales with the Co content. The energy of the Fe states is close to the energy at the Fermi level in the conduction band. The observed trends of the thermodynamic quantities can be interpreted in terms of the itinerant electron model only when the iron content is small. At high values ofδthe chemical potential of O₂becomes constant, indicating partial decomposition of the perovskite phase. The maximum value ofδat which the compositions are single-phase increases with temperature.     

Ab-initio calculation of structural, electronic, and optical characterizations of the intermetallic trialuminides ScAl3 compound

We present first-principles study of the electronic and the optical properties for the intermetallic trialuminides ScAl₃ compound using the full-potential linear augmented plane wave method within density-functional theory. We have employed the generalized gradient approximation (GGA), which is based on exchange-correlation energy optimization to calculate the total energy. Also we have used the Engel-Vosko GGA formalism, which optimizes the corresponding potential for calculating the electronic band structure and optical properties. The electronic specific heat coefficient (γ), which is a function of density of states, can be calculated from the density of states at Fermi energy N(E_F). The N(E_F) of the phase L1₂ is found to be lower than that of D0₂₂ structure which confirms the stability of L1₂ structure. We found that the dispersion of the band structure of D0₂₂ is denser than L1₂ phase. The linear optical properties were calculated. The evaluations are based on calculations of the energy band structure.     

The effect of Fe-doping on superconductivity of YBa2Cu30 y

In the present paper, an approximate band-structure treatment based on the EHMO approach is suggested and used to calculate the electronic structures of the Fe-doped superconductors YBa₂Cu_3–x Fe _x O _y . The present treatment gives, indeed, average band structures and average densities of states as the doping fraction increases. From investigations of the influence of the Fe-doping at the Cu-site on their properties, it is shown that as the Fe-doping fractionx in YBa₂Cu_3–x Fe _x O _y is raised from 0.0 to 0.5, (i) the broad anisotropic bands arising from the 1D Cu-O chains and the 2D Cu-O planes are displaced and depart from the Fermi levelE _f toward the high-energy zone by degrees, while the total electronic densities of states nearE _f are drastically decreased; (ii) the band arising from the Cu-O chains doped by Fe is gradually separated from the broad anisotropic bands arising from the 2D Cu-O planes; (iii) at the doping fractionx = 0.5, the Fe-doping results in an energy gap (about 0.2 eV) near E_f; (iv) the oxygen content is not a predominant factor for the superconducting properties of the Fe-doped Y-Ba-Cu-O system; (v) the total densities of states atE _f,N(E _f), and their decrease caused by the Fe-doping arise mainly from the 2D Cu-O planes, which implies the important role of the 2D Cu-O planes in the Y-Ba-Cu-O superconducting system.     

N／F掺杂和N-F双掺杂锐钛矿相TiO2（101）表面电子结构的第一性原理计算

采用密度泛函理论(DFT)平面波赝势方法计算了N/F掺杂和N-F双掺杂锐钛矿相TiO2(101)表面的电子结构.由于DFT方法存在对过渡金属氧化物带隙能的计算结果总是与实际值严重偏离的缺陷,本文也采用DFT+U(Hubbard系数)方法对模型的电子结构进行了计算.DFT的计算结果表明N掺杂后,N2p轨道与O 2p和Ti 3d价带轨道的混合会导致TiO2带隙能的降低,而F掺杂以及氧空位的引入对材料的电子结构没有明显的影响.DFT+U的计算却给出截然不间的结果,N掺杂并没有导致带隙能的降低,而只是在带隙中引入一个孤立的杂质能级,反而F掺杂以及氧空位的引入带来明显的带隙能降低.DFT+U的计算结果与一些实验测量结果能够较好地符合.