Production and characterization of nitrided CVD-SiC films

Silicon Carbide (SiC) and SiC with free silicon [SiC(Si)] thin films were prepared by chemical vapor deposition (CVD) using a CH₃SiCl₃-H₂-Ar gas mixture at a temperature of 1223 K. Afterwards these layers were gas nitrided in an ammonia-hydrogen-argon mixture at 1273 K. The solid product is an extremely thin film of silicon nitride on SiC or SiC(Si)-basic layers. These ultra thin silicon nitride films were investigated by glow discharge optical spectroscopy (GDOS) and x-ray photoelectron spectroscopy (XPS). The thickness of the layers was determined to a maximum value of 30 nm.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Identification of selective oxidation of TiC/SiC composite with X-ray diffraction and Raman spectroscopy

Open cell 3D titanium carbide/silicon carbide (TiC/SiC) composite was oxidised to titanium oxide/silicon carbide (TiO₂/SiC) following different temperature profiles in a thermal gravimetric analysis (TGA) instrument in continuous air-flow and static air (oven) environments. The TiC oxidation to anatase, starting at temperatures over 450°C, was confirmed by Raman spectroscopy and X-Ray diffraction (XRD). By increasing the temperature, the mass fraction of anatase diminished, while the mass fraction of rutile increased. SiC oxidation started at 650°C when a mixture of TiO₂/SiO₂/SiC could be observed by Raman, XRD and HRTEM.     

A highly sensitive electrochemical sensor for simultaneous determination of hydroquinone and bisphenol A based on the ultrafine Pd nanoparticle@TiO2 functionalized SiC

A titanium dioxide–silicon carbide nanohybrid (TiO₂–SiC) with enhanced electrochemical performance was successfully prepared through a facile generic in situ growth strategy. Monodispersed ultrafine palladium nanoparticles (Pd NPs) with a uniform size of ∼2.3 nm were successfully obtained on the TiO₂–SiC surface via a chemical reduction method. The Pd-loaded TiO₂–SiC nanohybrid (Pd@TiO₂–SiC) was characterized by transmission electron microscopy and X-ray diffractometry. A method for the simultaneous electrochemical determination of hydroquinone (HQ) and bisphenol A (BPA) using a Pd@TiO₂–SiC nanocomposite-modified glassy carbon electrode was established. Utilizing the favorable properties of Pd NPs, the Pd@TiO₂–SiC nanohybrid-modified glassy carbon electrode exhibited electrochemical performance superior to those of TiO₂–SiC and SiC. Differential pulse voltammetry was successfully used to simultaneously quantify HQ and BPA within the concentration range of 0.01–200 μM under optimal conditions. The detection limits (S/N = 3) of the Pd@TiO₂–SiC nanohybrid electrode for HQ and BPA were 5.5 and 4.3 nM, respectively. The selectivity of the electrochemical sensor was improved by introducing 10% ethanol to the buffer medium. The practical application of the modified electrode was demonstrated by the simultaneous detection of HQ and BPA in tap water and wastewater samples. The simple and straightforward strategy presented in this paper are important for the facile fabrication of ultrafine metal NPs@metal oxide–SiC hybrids with high electrochemical performance and catalytic activity.     

Effect of Nb,Ti, and W ion implantation on surface properties and cell compatibility of silicon carbide

Silicon carbide is considered as a bio-inert semiconductor material; consequently, it has been proposed for potential applications in human body implantation. In this study, we study the effect of implanting different metal ions on the surface properties of silicon carbide single crystal. The valence states of the elements and the surface roughness of implanted SiC were studied using X-ray photoelectron spectroscopy and atomic force microscope, respectively. Osteoblastic MG-63 cells were utilized to characterize the cytocompatibility of ion implanted SiC. The results show that after Nb ion implantation on the SiC surface, it mainly exists in the form of Nb–C bond, Nb–O bond, and a small amount of metallic niobium. The titanium implanted on SiC primarily forms Ti-C bond and Ti-O bond. The tungsten implanted on SiC mostly presents as metallic tungsten and W–O bond. The roughness of silicon carbide single crystal is improved by ion implantation of all three metal ions. Ion implantation of titanium and niobium can improve the cell compatibility and hydrophilicity of silicon carbide, whereas ion implantation of tungsten reduces the cell compatibility and hydrophilicity of silicon carbide.     

A DFT investigation of the interactions of Pd,Ag, Sn,and Cs with silicon carbide

With a view to understand the diffusion of radionuclides through the silicon carbide layers in tristructural isotropic coated fuel particles, density functional theory calculations are applied to assess the interaction of palladium, silver, tin, and caesium with silicon carbide. The silicon carbide molecule (Si₂C₂), crystalline cubic silicon carbide (β‐SiC), and the (120) ∑5 grain boundary of β‐SiC are investigated to elucidate the differences in the interactions of silicon carbide with these elements. The main stabilizing forces in the PdSi₂C₂ complex were found to be donor‐acceptor charge transfer (covalent) interactions, the Ag and Sn complexes involve significant contributions from both electrostatic and covalent interactions, while the Cs atom is bonded dominantly by electrostatic forces. For the unconstrained M? Si₂C₂ model, the following energetic ordering was obtained: Pd > Sn > Cs > Ag. The steric constraints in the bulk SiC and on the grain boundary change the order of binding energies to Pd > Ag > Sn > Cs in the interstitials and Pd > Sn > Ag > Cs in vacancies and at the grain boundary. By comparing the incorporation energies in the solid phases, it is possible to group these elements by similarities in the patterns of incorporation energies. Silver and palladium form a group with carbon, tin is grouped with silicon, and caesium is on its own. © 2014 European Commission. International Journal of Quantum Chemistry published by Wiley Periodicals, Inc.     

Hollow Silicon Carbide Nanostructures

Hollow silicon carbide nanostructures with length up to 1 m have been produced for the first time along with threadlike structures. The preparation of SiC nanostructures from silicon and carbon at 1000-1100 °C was carried out without prior gasification of these elements. The growth of SiC nanostructures involves a step featuring atomization of silicon and carbon at such low temperatures. The growth of SiC nanotubes upon the reduction of carbon by SiO₂ in the initial period of the preparation proceeds with their predominant formation as bundles. Silicon carbide may correspond to the highly textured -modification.     

Template‐Synthesized Porous Silicon Carbide as an Effective Host for Zeolite Catalysts

A facile method has been developed for the fabrication of porous silicon carbide (SiC) by means of sintering a mixture of SiC powder and carbon pellets at a relatively lower temperature, that is, 1450 °C, in air. The pore density and the total pore volume of the resulting porous SiC could be tuned by changing the initial SiC/C weight ratio. The structure evolution and the associated property changes during the preparation were examined through X‐ray diffraction, scanning electron microscopy, thermogravimetric analysis, ²⁹Si magic‐angle spinning (MAS) NMR spectroscopy, and mercury‐intrusion porosimetry analyses. Silica and SiO_xC_y ceramics formed in situ during the calcination process acted as binders of the porous SiC grains. The porous SiC can be used as a host for the growth of ZSM‐5 zeolite crystals to form the ZSM‐5/porous‐SiC composite material. After loading another catalytic active component of molybdenum, a novel catalytic material, Mo‐ZSM‐5/porous‐SiC, was obtained, which exhibited improved catalytic activity in the methane dehydroaromatization reaction.     

Solid State Reactions in the Al‐Si‐C System

The study is aimed to prevent the formation of the aluminium carbide compound Al₄C₃ that negatively affects Al‐Si‐C based materials. The reaction products of elementary aluminium, silicon and graphite as well as aluminium with either β‐SiC or α‐SiC without and with graphite at temperatures 1200°‐2500 °C under different atmospheres and reaction times were characterized using powder X‐ray diffraction and scanning electron microscopy (SEM) with an energy dispersive X‐ray (EDX) analysis. The results of the powder diffraction study show that under the conditions (1450 °C; 8 h; vacuum) the formation of Al₄C₃ could be prevented. The reaction products at those conditions consist of the ternary compound Al₄SiC₄ besides SiC and residual carbon. The ternary aluminium silicon carbide Al₄SiC₄ crystallizes in a hexagonal crystal system with unit cell dimensions a = 327.64(4) pm, b = 2171.2(6) pm and space group P6₃mc (no. 186). The crystal structure of Al₄SiC₄ is isostructural with Al₅C₃N and consists of layers of Al₄C₃ and SiC.     

Rheological Properties of SiC Suspensions with a Compound Surface Modification Using Ethyl Orthosilicate and Ethylene Glycol

Ultrafine silicon carbide (SiC) powders were surface-modified using ethyl orthosilicate (TEOS) combined with ethylene glycol. SiC suspensions with favorable rheological properties, low viscosity, and high solid loading were successfully obtained. The mechanisms of the compound surface modification for SiC powders as well as the influences of the compound surface modification not only on functional groups and charge state of the surface for SiC powders but also on the rheological properties of SiC suspensions were investigated in the present study. The results show that under alkaline conditions and acidic conditions, the surface charge states of SiC powders were [Si-OCH₂CH₂O]^? and [Si-OCH₂CH₂OH₂]⁺, respectively. The absolute value of zeta potential reached the maximum value of 22.69 mV at pH 11. Additionally, with added 1 wt% TEOS and 3 wt% ethylene glycol, the SiC suspensions exhibited good rheological properties, low viscosity and high stability due to the steric hindrance and electrostatic repulsion offered by the [Si-OCH₂CH₂O]^- with a high concentration.     

Synthesis of Poly(silyne-co-hydridocarbyne) for Silicon Carbide Production

Pre-ceramic polymers have previously been shown to be polymeric precursors to silicon carbide, diamond and diamond-like carbon. Here, we report the synthesis of a pre-ceramic polymer, poly(silyne-co-hydridocarbyne), which was electrochemically synthesized from one monomer containing both silicon and carbon in its structure. The polymer is soluble in common solvents such as CHCl₃, CH₂Cl₂ and THF. Since the polymer contains both silyne and carbyne on its backbone, it can be easily converted to silicon carbide upon heating under an ambient inert atmosphere, or to SiO₂ under ambient air atmosphere. Poly(silyne-co-hydridocarbyne) was characterized with UV/Vis spectroscopy, FTIR, ¹H-NMR, GPC and Raman spectroscopy. Conversion of the polymer to SiC ceramic was accomplished by heating at 1000 and 750°C under an argon atmosphere and characterized with optical microscopy, SEM, X-Ray and Raman spectroscopies.     

Chemical etching of hot‐pressed p‐type polycrystalline SiC surfaces by HF/K2S2O8 solutions

In this work, an experimental study on the etching of p‐type hot‐pressed silicon carbide (SiC) was carried out in HF/K₂S₂O₈ solutions. The SiC wafers used in this work were p‐type polycrystalline materials, supplied by Goodfellow, with an acceptor concentration of 2.31 × 10¹² cm^?3. The SiC substrate was a hot‐pressed material, the latter realized from a mixture of 1 part of SiO₂ with 3 parts of C (carbon) ‘1SiO₂ + 3C’ heated in an oven at 2500 °C. In order to facilitate the chemical etching of the SiC substrate, a thin aluminium film was deposited on the SiC substrate. The morphology of the etched surface was examined with varying K₂S₂O₈ concentration. The surfaces of the etched samples were analysed using secondary ions mass spectrometry (SIMS), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT‐IR) and photoluminescence (PL). The surface morphology of the samples etched in HF/K₂S₂O₈ is shown to depend on the solution composition. The investigation of the effect of the HF/K₂S₂O₈ solution on SiC samples shows that as K₂S₂O₈ concentration increases, the chemical etching reveals defects with random geometry. Finally, chemical etching of p‐type SiC induces a decrease in the PL intensity, which indicates clearly the defects on the polycrystalline SiC surface. In addition, the result is very interesting, as to date no chemical etching solution at low temperature (<100 °C) has been developed for SiC. Finally, we have proposed a dissolution mechanism of SiC in 2HF/1K₂S₂O₈ solutions. Copyright © 2007 John Wiley & Sons, Ltd.     

Selective Etching of Silicon from Ti3SiC2 (MAX) To Obtain 2D Titanium Carbide (MXene)

Until now, MXenes could only be produced from MAX phases containing aluminum, such as Ti₃AlC₂. Here, we report on the synthesis of Ti₃C₂ (MXene) through selective etching of silicon from titanium silicon carbide—the most common MAX phase. Liters of colloidal solutions of delaminated Ti₃SiC₂‐derived MXene (0.5–1.3 mg mL^?1) were produced and processed into flexible and electrically conductive films, which show higher oxidation resistance than MXene synthesized from Ti₃AlC₂. This new synthesis method greatly widens the range of precursors for MXene synthesis.     

Catalytic transformation of silicon tetraisocyanate Si(NCO)4 to a polymeric silylcarbodiimide

A new way for the preparation of inorganic polymeric carbodiimide‐based networks is presented which resembles the transformation of molecular isocyanates using 1‐phenyl‐3‐methyl‐2‐phospholene‐1‐oxide as a catalyst. The respective reaction sequence, well established in preparative organic chemistry, has been applied for the synthesis of carbodiimide‐based SiNC(O) materials. Starting from Si(NCO)₄ (silicon tetraisocyanate), a transformation to an insoluble extended inorganic array was achieved in boiling dodecan (T = 216 °C). Analysis of the polymer using X‐ray diffraction, FT‐IR, density measurement, matrix‐assisted laser desorption/ionization time of flight and TGA revealed that this highly moisture‐sensitive amorphous network consists of oligomers of high molar mass and exhibits a high density of around 1.5 g cm^?3, which corresponds quite well to the calculated density of crystalline Si(NCN)₂ reported in the literature. Degradation of this 'SiNC(O) phase' with the release of N₂ and (CN)₂ finally provided SiC as the only crystalline product. No indication of the formation of crystalline Si₃N₄ or intermediate crystalline 'SiC₂N₄', silicon carbodiimide (= Si(NCN)₂), was noticed. Copyright © 2013 John Wiley & Sons, Ltd.     

Production of HfB<Subscript>2</Subscript>–SiC (10–65 vol % SiC) Ultra-High-Temperature Ceramics by Hot Pressing of HfB<Subscript>2</Subscript>–(SiO<Subscript>2</Subscript>–C) Composite Powder Synthesized by the Sol–Gel Method

The formation of HfB₂–SiC (10–65 vol % SiC) ultra-high-temperature ceramics by hot pressing of HfB₂–(SiO₂–C) composite powder synthesized by the sol–gel method was studied. By the example of HfB₂–30 vol % SiC ceramic, it was shown that the synthesis of nanocrystalline silicon carbide is completed at temperatures of as low as ≥1700°C (crystallite size 35–39 nm). The production of the composite materials with various contents of fine silicon carbide at 1800°C demonstrated that the samples of the composition HfB₂–SiC (20–30 vol % SiC) are characterized by the formation of SiC crystallites of the minimum sizes (36–38 nm), by the highest density (89%), and by higher oxidation resistance during heating in an air flow to 1400°C.     

Chemical Vapor Deposition of Silicon Carbide and Silicon Nitride—Chemistry's Contribution to Modern Silicon Ceramics

Pure silicon carbide and silicon nitride have valuable properties in bulk pore-free form; however, their industrial exploitation has hardly been possible so far. Neither compound can be melted or sintered in pure form; hot pressing or sintering at normal pressure requires the presence of additives; and the reaction-sintering process in which only Si and C or Si and N are employed as additives affords porous materials.–The novel process of chemical vapor deposition has partly overcome the drawbacks of the previous methods. In the new process SiC is produced, e.g., by pyrolysis of CH₃SiCl₃, and Si₃N₄ by reaction of SiCl₄ with NH₃. This technique can also be used for pore filling in objects made of SiC and Si₃N₄ (gas phase impregnation) and for producing extremely fine SiC and Si₃N₄ (gas phase impregnation) and for producing extremely fine SiC and Si₃N₄ powder and SiC monofilaments suitable as components for SiC composites. Moreover, gas phase impregnation can also give fiber composites.     

Sonochemical synthesis of Fe–TiO2–SiC composite for degradation of rhodamine B under solar simulator

Fe–TiO₂–SiC composite with photocatalytic activity has been synthesized by a low cost sonochemical process in the presence of citric acid. The addition of citric acid during the sonochemical process allows the formation of a photocatalytic coating of Fe–TiO₂ onto silicon carbide. Experimental characterization results indicate that the composite was formed over all the surface of the silicon carbide (SiC) with an anatase crystalline TiO₂ phase with iron incorporation. The incorporation of iron narrows the band gap of TiO₂ which allow the absorbtion of light with a large wavelength. The obtained Fe–TiO₂–SiC composite exhibits good enhanced photocatalytic activity for the degradation of rhodamine B under solar simulator irradiation in comparison with the commercial TiO₂–P25.     

Porous MoO3@SiC hallow nanosphere composite as an efficient oxidative desulfurization catalyst

A novel N‐doped MoO ₃ @SiC hollow nanosphere has been synthesized through two steps. Due to the first step, N‐doped MoO₂@C nanosphere was synthesized using the hydrothermal method and in the second step, Si‐C bonds were formed through the low‐temperature magnesiothermic method and MoO ₃ @SiC hollow nanosphere was produced. The prepared nanostructures were identified by various techniques such as IR, XRD, XPS, BET/BJH, SEM/EDS, and Raman spectroscopy. Results show that converting of C to SiC increase the surface area from 17 to 241 m²/g with remarkably decrease in pore diameter. Also, molybdenum is present in the form of MoO₂ in carbon catalyst while during magnesiothermic process, it transfers to MoO₃ form in the SiC catalyst. The synthesized products were employed as catalysts in oxidative desulfurization of model fuel. The results displayed that MoO ₃ @SiC hollow nanostructure shows a superior catalytic activity (99.9%, 40 min) compared to C support (56%, 60 min). Furthermore, the recycling of MoO₂@C catalyst shows a dramatic decrease even after the first run, while, SiC support exhibit higher stability during the stronger interaction between molybdenum catalyst and SiC support.     

SiC Monolayers as Promising Substrates for the Development of Highly Stable Palladium Single Atom Catalysts: A Density Functional Theory Study

Single-atom catalysts have been touted as highly efficient catalysts, but the catalytic single-atom sites are unstable and tend to aggregate into nanoparticles during chemical reactions. In this study, we show that SiC monolayers are promising substrates for the development of highly stable single-atom catalysts (Pd₁/SiC) within the density functional theory. In presence of a Si-vacancy, the diffusion barrier energy of a Pd₁ atom embedded in the SiC monolayer is substantially enhanced from 2.3 to 7.8 eV, which is much higher than the reported diffusion barrier energies of graphene, boron nitride and defective MgO of the same catalytic system. Ab initio molecular dynamic calculations at 500 K also confirm the enhanced stability of Pd₁/SiC monolayer (Si-vacancy) such that the Pd₁ atom remains embedded in the vacancy. Additionally, the Pd₁/SiC monolayer (Si-vacancy) catalysts show a ∼34 % reduction of activation barrier energy for CO oxidation as compared to pristine catalysts. This work implies that nanostructured SiC materials are promising substrates for the synthesis of highly stable single-atom catalysts.     

Evaluation of exchange‐correlation functionals in comparison to B3LYP for the description of silicon and Cu‐doped silicon clusters

Several developed exchange‐correlation functionals in density functional theory have been systematically applied to describe the geometries and electronic properties of small silicon (Si_n+1, n < 5) and doped silicon (CuSi_n) clusters. The performance of the various approaches is done with their critical comparison with B3LYP and available high level wave function methods. Our calculations indicate that all functional give reasonable results. Further, OLYP/6‐311+G* approach generally agrees with B3LYP results. The good performance of OLYP is of significant interest knowing that the hybrid functionals are computationally more demanding than nonhybrid schemes. So, we recommend OLYP/6‐311+G* approach for studying the doped silicon clusters and understanding the electronic properties of silicon by the presence of doped metal impurities. © 2007 Wiley Periodicals, Inc. Int J Quantum Chem, 2008