Al2O3／（W，Ti）C纳米复合陶瓷材料的显微结构

使用纳米、亚微米级的α-Al2O3粉体和微米级的(W,Ti)C粉体为原料,采用热压烧结工艺制备了Al2O3/(W,Ti)C纳米复合陶瓷材料.对热压后材料的硬度、断裂韧性和抗弯强度进行了测试和分析,利用透射电镜、扫描电镜及X衍射仪对Al2O3/(W,Ti)C纳米复合陶瓷材料的微观组织和结构进行了研究.结果表明,增强相(W,Ti)C与基体Al2O3互相穿插、包裹,界面结合良好,形成了典型的骨架结构;球磨后的(W,Ti)C颗粒粒度分布广泛,热压烧结后与基体材料形成了内晶/晶间型结构;断裂模式的改变、内部残余应力场、位错机制、裂纹分叉和偏转等促进了材料强度和韧性的提高.     

热物性参数对Al2O3/(W,Ti)C/CaF2梯度自润滑陶瓷刀具材料残余应力的影响

基于功能梯度材料的设计思想,设计并制造了Al2O3/(W,Ti) C/CaF2梯度自润滑陶瓷刀具材料.利用有限元法计算分析了梯度自润滑陶瓷刀具材料层间热膨胀系数差值、分布指数和弹性模量对其残余应力的影响,并给出了径向应力和Von Mises等效应力的分布图,为梯度自润滑陶瓷刀具的研制开发提供了理论基础.以此为基础,采用真空热压工艺制备了Al2O3/(W,Ti) C/CaF2梯度自润滑陶瓷刀具材料.结果表明:据此制备的梯度自润滑陶瓷刀具材料具有良好的力学性能.     

层数对梯度自润滑陶瓷刀具材料Al2O3/TiC/CaF2残余应力的影响

针对陶瓷减摩性能与耐磨性能不能在自润滑刀具中合理兼顾的难题,本研究将梯度功能材料设计思想引入Al2O3/TiC/CaF2自润滑陶瓷刀具材料的设计和制造中,并建立了该梯度自润滑陶瓷刀具材料的物理模型、组成分布模型和物性参数模型.采用有限元方法计算分析了层数对对称型梯度自润滑陶瓷刀具残余应力的影响,确定了最佳层数为7层.以本设计模型和有限元分析结果为基础,制备了分布指数为1.8的7层梯度自润滑陶瓷刀具材料Al2O3/TiC/CaF2.试验结果表明:所制备的梯度自润滑陶瓷刀具材料具有良好的力学性能.     

自润滑Al2O3/TiC/CaF2复合陶瓷材料摩擦特性

为了探索自润滑陶瓷材料的开发及应用,采用冷压烧结工艺制备Al2O3/TiC/CaF2自润滑复合陶瓷材料。在摩擦磨损实验机上对其进行摩擦磨损实验,并对其摩擦磨损行为及自润滑效应进行分析。结果表明:在实验过程中,Al2O3/TiC/CaF2复合陶瓷材料物理机械性能优于同条件下制备的Al2O3/TiC复合陶瓷材料,且具有较低的摩擦因数和磨损率,其减摩抗磨效果明显,具有一定的自润滑效应,其减摩抗磨机理为摩擦驱动下CaF2存在于摩擦副表面,形成减摩抗磨层,在表面形成一层平整、光滑的自润滑层,增加摩擦表面实际接触面积,起到自润滑效应。     

烧结工艺对原位合成ZrO2/TiB2复合陶瓷材料的力学性能影响

以TiC和B4C为原料反应生成TiB2,原位合成了TiB2含量为20％的ZrO2/TiB2复合陶瓷材料.分析了烧结工艺中烧结温度、保温时间和烧结压力对力学性能的影响.结果表明:当烧结温度由1650℃提高到1750℃时,复合陶瓷材料的抗弯强度由820 MPa增加到980 MPa,断裂韧性从7.2 MPa·m1/2提高到9.4 MPa·m12;当烧结温度升至1850℃时,抗弯强度和断裂韧性下降;显微硬度随烧结温度的升高而提高.在烧结温度1750℃压力为30MPa保温时间由30 min提高到45 min时,断裂韧性从8.6 MPa·m1/2提高到9.4 MPa·m1/2;保温时间增加至60 min时,断裂韧性下降;保温时间的变化对材料的抗弯强度、硬度影响不大.烧结压力对复合陶瓷材料的力学性能的影响较小.当烧结参数为1750℃、45 min、30MPa,ZrO2/TiB2复合陶瓷材料的抗弯强度、显微硬度、断裂韧性分别达到980 MPa、13.6 GPa、9.4 MPa·m1/2.     

Co包覆Al2O3/TiC复合材料的烧结及性能

采用Co包覆Al2O3/TiC微米级、纳米级粉料进行了不同Co含量、不同烧结温度的热压烧结实验.综合分析和对比了两种不同粒径包覆粉体的烧结结果,结果发现纳米级的粉体烧结效果优于微米级粉体的烧结效果.综合力学性能最佳的纳米级复相陶瓷材料的硬度为HRA92.7,抗弯强度σf为782 Mpa,断裂韧性KIC为7.81 Mpa·M1/2.利用SEM观察采取综合力学性能最佳的ATC纳米复合材料制备工艺制备的Al2O3、Al2O3/TiC和ATC的断口,可以看出Al2O3、Al2O3/TiC主要以沿晶断裂为主,而ATC为沿晶与穿晶混合断口,并从ATC断口,发现形成了晶内型结构,观察到了裂纹曲折的扩展路径以及裂纹的分叉、偏转、桥联这些有助于材料强度和韧性提高的现象.     

Al2O3/TiB2/AlN/TiN复合陶瓷材料的力学性能及显微结构

将金属Al、Al3Ti和TiB2以AlTiB中间合金的形式引入Al2O3基体材料中,采用热压原位反应生成法制备了Al2O3/TiB2/AlN/TiN复合陶瓷材料.复合材料在烧结过程处于过渡液相烧结,并有新相AlN和TiN生成;对热压烧结后材料的硬度、断裂韧性和抗弯强度进行了测试和分析;分析了复合材料力学性能随AlTiB体积百分含量的变化规律;探讨了复合材料断面断裂方式的变化对其力学性能的影响;并对AlTiB中间合金的细化特性进行了分析.     

原位合成ZrO2/TiB2复相陶瓷材料的制备及性能

以3Y-ZrO2为基体,用TiC和B4C为原料反应生成TiB2,原位合成了ZrO2/TiB2复相陶瓷材料,测试和分析了复合材料的抗弯强度、维氏显微硬度和断裂韧性。结果表明:原位生成的TiB2对基体起到较好的增韧补强作用。当TiB2的质量分数为30%时,复合陶瓷的综合力学性能最好,其抗弯强度、维氏显微硬度及断裂韧性分别达到1060 MPa、14.5 GPa和11.2 MPa.m1/2。     

c-BN含量对(Ti,W)C/WC/Co金属陶瓷刀具材料力学性能的影响

采用真空热压烧结工艺制备了(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料,分析了(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料的微观结构、元素成分和物相组成,研究了不同含量c-BN对(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料微观结构和力学性能的影响.研究结果表明:适量添加c-BN 能有效细化颗粒,减少气孔等缺陷,提高材料的相对密度,(Ti,W)C/WC/c-BN/Co金属陶瓷刀具材料的断裂模式为穿/沿晶混合断裂模式;当c-BN含量为1wt;时,(Ti,W)C/WC/c-BN/Co金属陶瓷刀具的综合力学性能最优,其抗弯强度、断裂韧性和维氏硬度分别为769.32±10.21 MPa、6.69±0.18 MPa·m1/2和22.83±0.46 GPa.     

AlN/Mo/TiB2微波衰减材料的制备及介电性能研究

采用放电等离子烧结制备了AlN/Mo/TiB2微波衰减材料.研究了TiB2的含量对复合材料的相组成、致密度、电阻率及介电性能的影响.利用XRD、SEM、网络分析仪对样品的相组成、微观结构、介电性能进行测试分析.结果表明:随着TiB2的含量的增加,复合陶瓷的致密度先增大后减小,当加入15wt; TiB2时,致密度达到最大,为98.71;.加入TiB2有利于复合陶瓷介电常数和介电损耗的增加.从电导率测试结果可知,复合陶瓷的渗流阈值在TiB2含量为15wt;.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.     

Crystal growth of NdAl3(BO3)4 from K2O/MoO3/Nd2O3/B2O3/KF flux

NdAl₃(BO₃)₄ single crystals were grown by the flux method and the TSSG technique using a K₂O/3MoO₃/B₂O₃/0.5Nd₂O₃/KF flux system. Light-violet clear crystals could be obtained. The effects of fluoride on the growth of NAB crystals were investigated. As the content of KF was gradually increased, the growth form of NAB was changed from the equant to the columnar and the primary crystalline region of NAB was shrinked. At the ratio of KF/K₂O = 0.75, NAB crystals could not be grown.     

Synthesis and structure of new phases of the Am?1Bi2BmO3m+3 (m = 2) type

Three polycrystalline bismuth-containing layered perovskite-like oxides are synthesized by high-temperature solid-state reactions. One of these compounds was described previously, namely, Bi₃Ti_1.5W_0.5O₉, for which the unit cell parameters a = 5.372(5) Å, b = 5.404(4) Å, and c = 24.95(2) Å are determined in this study. The other two compounds, namely, Na_0.75Bi_2.25Nb_1.5W_0.5O₉ with the unit cell parameters a = 5.463(1) Å, b = 5.490(7) Å, and c = 24.78(0) Å and Ca_0.5Bi_2.5Ti_0.5Nb_1.5O₉ with the unit cell parameters a = b = 3.843(2) Å and c = 24.97(6) Å, are synthesized for the first time. The compositions of these compounds are based on the composition of the well-known compound Bi₃TiNbO₉ with a high Curie temperature (T _C = 1223 K), in which bismuth, niobium, and titanium atoms are partially or completely replaced by other atoms. The experimental and calculated interplanar distances determined from the X-ray diffraction patterns of the studied compounds are presented. __________ Translated from Kristallografiya, Vol. 50, No. 1, 2005, pp. 59–64. Original Russian Text Copyright ? 2005 by Geguzina, Shuvaev, Shuvaeva, Shilkina, Vlasenko.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers

We propose a new growth scheme of digitally alloyed modulated precursor flow epitaxial growth (DA-MPEG) using metalorganic and hydride precursors for the growth of Al_xGa_1−xN layers with high-Al content at relatively low temperatures. The growth of high-quality, high-Al content Al_xGa_1−xN layers (x_Al>50%) that are composed of AlN and Al_yGa_1−yN monolayers on AlN/sapphire template/substrates by DA-MPEG was demonstrated. The overall composition of the ternary Al_xGa_1−xN material by DA-MPEG can be controlled continuously by adjusting the Column III mole fraction of the atomic Al_yGa_1−yN sub-layer. X-ray diffraction and optical transmittance results show that the AlGaN materials have good crystalline quality. The surface morphology of DA-MPEG AlGaN samples measured by atomic force microscopy are comparable to high-temperature-grown AlGaN and are free from surface features such as nano-pits.     

Crystallization behaviours ofCo100−1(x+y)NbxBy amorphous alloys

The crystallization behaviours of Co_100?1(x+y)Nb_xB_y amorphous alloys were investigated by means of differential thermal analysis and a conventional X-ray diffractometer. The crystallization sequences are discussed in terms of the equilibrium phase diagram of the ternary alloy system.Assuming crystallization occurs as a result of nucleation and growth, the stabilizing effect of eutectic phase separation on the crystallization is shown by introducing the effective free energy of the critical nucleus.