以硅纳米孔柱阵列为模板制备金纳米薄膜

采用浸渍技术,分别以新鲜和老化两组硅纳米孔柱阵列(Si-NPA)衬底为模板制备了不同形貌特征的Au/Si-NPA.结果表明:造成两组衬底上形成的Au/Si-NPA形貌上的巨大差异主要是由于两组Si-NPA衬底表面氧含量的分布不同所致.进一步分析发现,Si-NPA在Au/Si-NPA的形成过程中既起到了模板作用,又起到了还原的双重作用.由于Si-NPA具有规则的阵列结构,从而使得金在Si-NPA表面上的沉积速率产生选择性,最终可以形成准周期的、规则的金纳米复合薄膜.     

氮化钛/氧化锰复合薄膜制备及其SERS特性研究

以四氯化钛为钛源,采用氨气还原氮化法得到氮化钛薄膜,再以草酸锰为原料,通过电化学沉积法在氮化钛薄膜表面沉积氧化锰纳米结构,利用XRD、XPS、FE-SEM、RAMAN测试表征薄膜组成、结构及其表面增强拉曼光谱(SERS)性能.XPS分析表明制备的复合薄膜中Mn元素以多种价态形式存在,利用XRD对薄膜晶相分析发现氮化钛为面心立方晶型,氧化锰为无定形.随着沉积时间的增加,沉积在薄膜上的氧化锰颗粒长大,并逐渐细化呈细条状,薄膜表面变得粗糙.利用R6G作为拉曼探针分子研究氮化钛/氧化锰复合薄膜的SERS效应,结果表明,氮化钛/氧化锰复合薄膜具有拉曼增强效应,在沉积时间为30 s时达到最大值,拉曼信号强度是纯氮化钛薄膜的2倍,且复合薄膜均匀性较好,拉曼检测极限为10-5 mol·L-1,经计算其拉曼增强因子为7.412×102.由此可见,采用电化学沉积制备的氮化钛/氧化锰复合薄膜具有作为SERS基底材料的应用潜力.     

晶体硅表面Ag纳米颗粒形貌控制及其对黑硅性能的影响

采用湿法化学法在太阳能级Si(100)表面沉积Ag纳米颗粒,并对Ag颗粒进行了退火处理.利用扫描电子显微镜研究了不同沉积时间及退火工艺对硅片表面Ag纳米颗粒形貌的影响规律.在此基础上采用退火前后的Ag纳米颗粒辅助化学腐蚀法制备了黑硅减反射结构,并用扫描电子显微镜观察了所制备黑硅的微结构,用紫外-可见分光光度计研究了所制备黑硅的反射率.研究表明,制备的Ag颗粒为不规则片状结构,并且随Ag沉积时间的延长,Ag颗粒逐渐长大.通过对样品退火处理,Ag颗粒收缩成球状纳米颗粒.利用未退火的Ag颗粒制备的黑硅呈不规则纳米线状微结构,在300 ～ 1100 nm范围内平均反射率为2.7;;而利用退火后球状Ag纳米颗粒制备的黑硅则呈多孔状微结构,同样波长范围内平均反射率为14.2;.     

枝状ZnO-TiO2复合纳米棒阵列的制备及表征

采用化学水浴沉积法,在预制晶种层的基底上得到垂直底面生长的有序ZnO纳米棒阵列,再用反应磁控溅射方法,沉积制备ZnO-TiO2复合结构的纳米棒阵列.利用X射线衍射(XRD)和扫描电子显微镜(SEM)对制备得到的样品进行结构和形貌表征,研究了晶种层、水浴生长液浓度和磁控溅射氧氩比对复合纳米阵列的影响.制备得到了具有TiO2分枝的复合纳米棒阵列,并初步探讨了TiO2分枝的形成机理,为制备基于复合纳米棒阵列的器件提供了条件.     

PECVD法制备不同衬底微晶硅薄膜的研究

采用等离子体增强化学气相沉积(PECVD)法分别在玻璃衬底和p型薄膜硅衬底上制备了微晶硅薄膜。使用拉曼谱仪、紫外-可见分光光度计、傅里叶红外光谱仪等对微晶硅薄膜进行检测,重点研究了硅烷浓度、衬底温度对薄膜沉积速率和晶化率的影响。实验结果表明:两种衬底上薄膜的沉积速率均随硅烷浓度的增大、衬底温度的升高而变大。硅烷浓度对两种衬底的薄膜晶化率影响规律相同,即均随其升高而降低;但两种衬底的衬底温度影响规律存在差别:对玻璃衬底而言,温度升高,样品晶化率减小;而p型薄膜硅衬底则在温度升高时,样品晶化率先增大后减小。此外还发现,晶化率与薄膜光学性能及含氧量存在较密切关联。     

银在硅纳米孔柱阵列上浸渍沉积的位置选择性

利用硅纳米孔柱阵列(Si-NPA)表面规则的图案化形貌和还原性,采用浸渍沉积技术制备了具有三种不同表面结构特征的Ag/Si-NPA复合纳米体系.在未经清洗的Si-NPA衬底,沉积银的形貌为树枝状;在新鲜衬底和自然老化衬底上,银的沉积都会形成规则的手链网络;而经过强氧化处理的衬底上则不能实现银的浸渍沉积.分析表明,Si-NPA表面的规则阵列和多孔结构等几何构型,在样品的后处理过程中将导致样品表面氧化程度随空间几何位置出现周期性梯度分布,从而对浸渍溶液中银离子在不同几何特征区域的还原、成核及生长模式产生控制作用,最终导致了银在Si-NPA表面浸渍沉积的位置选择性.本研究为采用浸渍沉积技术制备周期性、图案化的金属/硅复合纳米体系,研究其物理性能并探索其可能的器件应用奠定了基础.     

垂直导电衬底的ZnO纳米片的制备及其染料敏化太阳电池的性能

介绍了二水乙酸锌/甲醇体系和硝酸锌/尿素体系制备垂直导电衬底的多孔ZnO纳米片、相应染料敏化太阳电池的性能以及制备垂直导电衬底ZnO纳米片体系的发展和现状.硝酸锌/尿素体系更易得到垂直导电衬底的多孔ZnO纳米片,而采用二水乙酸锌/甲醇体系,既可得到垂直导电衬底的多孔ZnO纳米片,也可得到由纳米片组成的多级结构微球.当前,硝酸锌/尿素体系制备的垂直导电衬底的ZnO纳米片的电池最高光电转换效率已达6.06;.     

电化学沉积法制备镍枝晶

采用电化学沉积法制备了镍枝晶沉积物,考察了不同的试验参数对枝晶生长过程以及微观形貌的影响.结果表明,枝晶具有典型的自相似性,枝晶容易在高的电流密度下生长,电流密度高,提高了阴极过电位,有利于枝晶形成;电解液里Ni2浓度的增加,沉积层分型更加明显,制备的镍枝晶逐渐稀疏,分叉也相应减小.随着电解液温度的提高,沉积层由开放型向致密型转化.这是因为在很高电流密度下,很容易发生析氢反应,释放大量气泡;金属离子在气泡之间的空隙被还原形成多孔的沉积层.     

硅基AAO模板内电化学沉积ZnO纳米线及其光电性能研究

本文利用二次阳极氧化法在p型低阻〈100〉晶向的硅衬底上制备了AAO/Si,以硅基AAO为辅助模板,采用电化学沉积的方法以Zn(NO3).6H2O和HMT(C6H12N4)为原料,在80℃的水浴槽中制备了ZnO纳米线结构。采用SEM,XRD和拉曼光谱等手段对ZnO/AAO/Si复合结构进行表征。SEM图表明ZnO纳米线已成功组装到AAO/Si模板里,直径约45 nm,长度约为600 nm。XRD和拉曼光谱表明ZnO具有六角纤锌矿多晶结构。光致发光(PL)谱图表明ZnO/AAO/Si复合结构在565 nm附近有较宽黄绿发射峰,在395 nm附近有微弱的紫外发射峰。场发射测试结果表明,ZnO纳米线的场增强因子的β值为2490,场增强因子很高,具有广泛的应用前景。     

Ag/MoS2复合纳米材料对香精分子的SERS效应

采用正丁基锂插层法在室温下制备了MoS2纳米片悬浊液;同时,在酒石酸和抗坏血酸的还原作用下,由硝酸银溶液制备了Ag纳米粒子分散液.将两种液体按一定比例混合,再放置过夜后就可制得Ag/MoS2复合纳米材料.以邻氨基苯甲酸甲酯香精分子为标记物,在波长为785 nm的激光激发下,对该复合材料的表面增强拉曼散射(SERS)光谱性能进行了测试,结果表明,该材料对香精分子具有很高的SERS效应.     

低成本氧化铟锡基底的制备及其SERS活性

本文采用脉冲激光沉积和真空退火的方法在铝箔上制备氧化铟锡(indium tin oxide, ITO)表面增强拉曼散射(surface-enhanced Raman scattering, SERS)活性基底,并研究了ITO基底的SERS特性。沉积了700、1 000、1 300、1 600、2 000五组脉冲数的基底,测量结果显示薄膜厚度与脉冲数接近线性关系,当ITO薄膜厚度为60.80 nm(脉冲数为1 300)时,拉曼信号的增强程度达到最大值,其拉曼强度是Au基底的2~3倍。研究表明,真空退火能够显著提升ITO基底的拉曼增强效果,不同厚度的ITO薄膜基底均具有明显的SERS增强效果,可以通过控制薄膜厚度对ITO基底进行SERS调控。这些研究结果可为后续ITO材料SERS研究及应用提供参考依据。     

Electrical and sensory properties of zinc oxide – porous silicon nanosystems

Abstract

Zinc oxide nanostructures have been grown by electrochemical deposition on porous silicon–silicon substrate. The photoelectric and sensory properties of the obtained ZnO–porous silicon nanosystems were investigated in both DC and AC regimes. The obtained structures were characterized by photosensitivity in the 400–1100?nm wavelength range and by high sensitivity to moisture. Increase of relative humidity resulted in significant decrease of the electrical resistance and increase of the capacitance of the hybrid structures. To estimate the sensory properties of the ZnO–porous silicon nanostructures their adsorption sensitivity and dynamic characteristics were analyzed. Discovered features of the charge transport processes broaden the prospects of the semiconductor nanosystems application in gas sensors and photodetectors.     

多孔硅制备研究进展及其在锂离子电池方面的应用

多孔硅具有比表面积大、发光性能良好等特点,目前对于多孔硅的研究已经涉及到生物与化学传感器、药物递送、光催化、能源等领域。多孔硅中的孔隙可有效缓解硅在锂化时的体积膨胀,缩短锂离子从电解液向硅本体扩散的距离,促进高电流密度下的充放电过程。因此,多孔硅在储能领域得到了广泛研究与发展。但是一些挑战仍然存在,如制备成本、刻蚀机理、多孔结构的调控、多孔硅的电化学性能等还不能满足商业化应用的要求。本文对目前国内外多孔硅制备方法的研究进行了综述,并详细介绍了多孔硅在锂离子电池领域的应用。最后,对多孔硅材料在储能领域的发展进行了展望。     

镁离子掺杂多孔硅的蓝光发射

用电化学方法对多孔硅薄膜进行了镁离子的化学掺杂.用荧光分光光度计分析了样品的光致发光特性,发现镁掺杂增强了多孔硅的蓝光发射,当镁离子浓度增大到0.002mol/L时,可使蓝光强度达到多孔硅红光强度的一半.红外吸收谱表明,掺镁多孔硅的表面形成较完整的Si-O-Si网络结构,分析结果认为,多孔硅的蓝光光激发主要发生在多孔硅的纳米硅粒中,光发射主要发生在多孔硅中包裹纳米硅SiOx层中的发光中心上,对实验结果进行了合理的解释.     

Surface enhanced Raman scattering in an amorphous matrix for Raman amplification

In order to improve the efficiency of Raman Amplifiers, the Surface Enhanced Raman Scattering (SERS) effect of an amorphous matrix of TiO₂ was studied. First, optimisation of the amorphous layer quality was performed by depositing thin films on glass substrates at different temperatures. Then, thin films of amorphous TiO₂ were deposited on silicon commercial gold SERS substrates (Klarite®) by a dip-coating process. The SERS effect was demonstrated by the great difference of Raman intensities of the amorphous TiO₂ matrix dip-coated on active and inactive parts of Klarite® substrate under 633 nm and 780 nm laser excitations in the tail of the Surface Plasmon Resonance band of gold nanoparticles.     

Design and application of dielectric distributed Bragg back reflector in thin-film silicon solar cells

A dielectric distributed Bragg reflector (DBR) formed by four pairs of hydrogenated amorphous silicon/silicon nitride layers is used as the back reflector in thin-film silicon solar cells. The DBR was designed to perform in a broad wavelength range with the peak reflectance at 600 nm. The DBR was fabricated at low substrate temperature (172 °C) and applied at the rear side of flat and textured amorphous silicon single-junction solar cells in both superstrate (pin) and substrate (nip) configurations. The spectral response and electrical I–V characteristics were measured. Solar cells with optimized DBR exhibit an enhanced external quantum efficiency in the long wavelength range and the electrical performance is comparable to solar cells having conventional Ag back reflector.     

Surface migration of small crystallites: A monte Carlo simulation with continuous time

The migration of crystallites on an amorphous substrate by the mechanism of morphological changes was studied with a Monte Carlo simulation technique which used, in contrast to the usual methods, time as a continuous parameter. For this case an enormous increase in computational efficiency was achieved. As an example the activation energies for Au or Ag on alkalihalide substrates were used. It was shown that, and indicated how the theory of this migration mechanism has to be improved.     

Epitaxial growth in the (111)Ag/Cu and (111)Au/Cu systems

The initial stages of epitaxial growth in the (111)Ag/Cu and (111)Au/Cu systems were investigated using UHV-RHEED and TEM on the same specimens. Flat, monocrystalline (111)Cu substrates, 1100 Å thick, were formed in situ in the RHEED system on (111)NaCl/mica bilayers. The latter consisted of air-cleaved mica on which 150 Å of NaCl was vacuum-evaporated to form a (111)NaCl monocrystalline film. The NaCl layer allowed easy removal in water of the subsequently deposited bilayer metal film. RHEED showed that these Cu films grew with extremely flat surfaces at 400°C and 10 Å/sec deposition rates. They were then annealed at 500°C for 15 min to reduce their dislocation content and finally used as substrates for subsequent deposition of thin Ag or Au superlayers. The average Ag and Au superlayer thicknesses were varied from fractions of an Angstrom to approximately 20 Å. It was shown that despite the elongated streaks in the RHEED patterns, film growth occurred by an island mechanism, the islands having flat top surfaces. In the initial growth processes, the islands merely thickened. After a few average monolayers were deposited, the islands began to widen, often by means of much thinner islands, finally coalescing into a continuous film. The Au overgrowths became continuous in the 6–11 Å thickness range. In the case of Ag, there still were some open areas in the overgrowth at 20 Å. In both cases the continuous regions of the Ag and Au overgrowths consisted of sharply delineated thick and thin areas that gave rise to steps on the otherwise flat surface.     

Remote plasma deposition of microcrystalline silicon thin-films: Film structure and the role of atomic hydrogen

Microcrystalline silicon films grown in an expanding thermal plasma, i.e. in the absence of ion bombardment, are found to be porous and rich in nano-sized voids. By carrying out an extensive investigation on the material quality of films deposited in the amorphous-to-microcrystalline transition regime, on the microcrystalline silicon growth development, and on the influence of the substrate temperature, it is concluded that the inferior material quality is related to the lack of a sufficient amount of amorphous silicon tissue. As possible cause for the insufficient amount of amorphous silicon tissue, the interaction of atomic hydrogen with amorphous silicon films has been studied in order to highlight a possible competition between film growth and H-induced etching of amorphous silicon, and between film growth and H-induced surface/film modification. The etch rates obtained are too low to compete with film growth. Furthermore, atomic H cannot be considered responsible for the poor quality of amorphous tissue present in the microcrystalline silicon films, as the H up-take mainly takes place in divacancies. These results suggest that ion bombardment may be a necessary condition to provide good quality microcrystalline silicon films.     

Influence of heat treatment on the colour of Au and Ag glasses produced by the sol-gel pathway

In this work, coloured glasses were produced based on the synthesis of gold and silver nanoparticles by the sol-gel process having in mind their application in art works. Gold and silver were used separately or as a mixture by varying the mole fractions in order to get a range of colours from yellow to red. The gold and silver nanoparticles were prepared by the reduction of tetrachloroauric acid and silver nitrate with sodium citrate in aqueous solutions which were further introduced in the sol-gel system. Attention was focused on the thermal treatment of the sol-gel samples. Different temperatures were used in order to determine their influence on the obtained colour. The glasses were characterized by UV-Vis absorption spectroscopy and the size of the nanoparticles was examined by transmission electron microscopy (TEM).The range of colours mentioned above is obtained either by preparing nanoparticles of each metal and mixing them or by preparing nanoparticles from solutions containing initially ions of both metals. In the former case, two surface plasmon resonance (SPR) bands were observed for temperatures below 200 °C while higher temperatures promote the formation of alloys between the Ag and Au nanoparticles. In the latter case, only one SPR band is observed and the nanoparticle size distribution is narrower. The results were explained by nanoparticle aggregation promoted by temperature. Glasses containing only Ag did not present the typical yellow colour above 300 °C but it was shown that the colour could be stabilized if Au was added in small amounts (Au/Ag molar ratio 0.1).