Multimode phonon structure of Be‐containing II ‐ VI mixed crystals determined by IR spectroscopic ellipsometry

Spectroscopic ellipsometry in the infrared spectral range 250‐5000 cm^‐1 is used for analysis of the dielectric response of Zn_1‐x‐yBe_xMg_ySe and Zn_1‐x‐yBe_xMn_ySe crystals grown by a high‐pressure Bridgman method. Ellipsometric spectra display features in the spectral range 390‐500 cm^‐1 associated with BeSe‐type phonon modes. In the optical spectra of Zn_1‐x‐yBe_xMg_ySe crystals both BeSe‐type and MgSe‐type lattice absorption bands are detected. The MgSe‐like modes are located at approximately 300 cm^‐1. The complex dielectric functions can be reproduced using a model with two or three and one or two classical damped oscillators corresponding to the BeSe‐like and the MgSe‐like transverse‐optical phonon modes, respectively. The frequencies of longitudinal‐optical phonons have been derived from the dielectric loss functions. A red‐shift of the BeSe‐like phonons frequencies with a mean rate 0.42 cm^‐1 (0.50 cm^‐1) per mole percent of Mg (Mn) incorporated to the alloy has been found for examined concentration range x, y ≤ 0.25. A noticeable damping the intensities of BeSe‐type modes with increasing fraction of Mg and Mn dopant is observed in comparison to the strengths of BeSe‐type modes in Zn_1‐xBe_xSe crystals. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Investigation of II –VI alloy lattice dynamics by IR spectroscopic ellipsometry

Optical properties related to lattice vibrations of bulk Zn_1‐xBe_xSe, Zn_1‐x‐yBe_xMn_ySe and Cd_1‐xBe_xSe alloys are reported. Optical phonons of the mixed crystals grown by the Bridgman method have been investigated by infrared spectroscopic ellipsometry in the wave‐number range 300‐8000 cm^‐1. The complex dielectric functions can be reproduced using a model with two or three classical damped oscillators corresponding to the BeSe‐like transverse‐optical phonon‐modes and a Drude contribution from the free carriers. The frequencies of longitudinal‐optical phonons have been found from the imaginary parts of the dielectric loss functions. The influence of the alloy composition on the zone‐centre optical phonon frequencies is discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and photoluminescence properties of CdS solid solution semiconductor

Photoluminescence (PL) emitted from Cd_1‐xZn_xS and CdS_1‐ySe_y solid solution semiconductor was significantly stronger than PL from the pure CdS and CdSe semiconductor. The samples were prepared using an improved Se‐S‐Na₂S flux route. Photoluminescence in Cd_1‐xZn_xS crystal was brightly yellow at the room temperature under VU radiation. The phase and composition of the solid solution was measured by the XRD and was confirmed by UV‐NIS spectrum as x of 0.3 and y of 0.2. The enhanced photoluminescence was presumably due to the introduction of extra defect (vacancies) by solid solution action and consequently the increasing of luminescence center concentration. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and optical property of BexZn1‐xO nanorod arrays

Be_xZn_1‐xO nanorod arrays with high crystalline quality were fabricated on Si substrate by a simple, low‐cost hydrothermal method. The effect of Be‐corporation on the structure, morphology and optical property of ZnO nanorod arrays was investigated. The diameter of Be_xZn_1‐xO nanorods gradually decreased and the length of them increased with increasing Be concentration. Edge emissions of the Be_xZn_1‐xO nanorods show a obvious blue shift upon the increase of the Be content.     

Raman scattering characterization of Mn composition and strain in Ga1–x Mnx Sb/GaSb epitaxial layers

Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga_1–x Mn_x Sb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga_1–x Mn_x Sb samples show only GaSb‐like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x‐ray (EDX) experiments, the compositional dependence of GaSb‐like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga_1–x Mn_x Sb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb‐like phonon modes are suggested by reduced‐mass model. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Some structural considerations on the perovskite‐type A1‐ySryCo1‐xFexO3‐δ solid solution series

Solid solution series of La_1‐ySr_yCo_1‐xFe_xO_3‐δ were extensively studied in the past as cathode materials for solid oxide fuel cells. However, the crystal structure behavior of La_1‐ySr_yCo_1‐xFe_xO_3‐δ solid solution series when La‐ions are replaced with another rare‐earth ion or metallic alkaline earth metal is at present not fully understood. Here we report X‐ray powder diffraction measurements performed on samples of the Sm_0.8Sr_0.2Co_1‐xFe_xO_3‐δ solid solution series. This study demonstrates that the average A‐cation radius, as well as the Fe content (x), affects the structural modification of the A_1‐ySr_yCo_1‐xFe_xO_3+δ solid solution series significantly. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of superconductive Nd2‐xCexCuO4‐y single crystals

Nd_2‐xCe_xCuO_4‐y single crystals with different x values have been successfully grown by Traveling Solvent Floating Zone method (TSFZ). Electronic properties of Nd_2‐xCe_xCuO_4‐y single crystals with various x have been studied in detail. The results show that superconductivity can be found in crystals with x > 0.1 (0.13‐0.18) directly grown at oxygen‐reduced atmosphere without post‐annealed, while no superconductivity appears in crystals with x < 0.1 at the same atmosphere. It is also found that, the segregation coefficient of Ce is determined to be 0.946 and transition temperature Tc (onset) reaches maximum value of 23.5 K at nominal composition x = 0.165. With further increase of Ce concentration, transition temperature of single crystals declines due to the precipitation of secondary Phases. In addition, the variation of lattice constants of Nd_2‐xCe_xCuO_4‐y single crystals with different x is also given. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Light Emitting Diodes Fabricated from Liquid Phase Epitaxial InAs/InAsxP1‐x‐ySby/InAsx'P1‐x'‐y'Sby' and InAs/InAs1‐xSbx Multi‐Layers

Mid‐infrared light emitting diodes (LED) in 3‐5μm wavelength range have been fabricated from InAs/InAs_xP_1‐x‐ySb_y/InAs_x'P_1‐x'‐y'Sb_y' composition graded layer and InAs/InAsSb multilayers. The heterostructures were grown by liquid phase epitaxy (LPE) between 600 and 520°C. An output power of 3.1 mW at 11K and of 10 μW at 300 K have been obtained under a peak current of 100 mA (50 % duty ratio) from InAsSb multilayers. Recombination mechanisms for these diodes were studied by temperature‐dependent emission spectra using Fourier transform infrared (FTIR) measurement system with double modulation. The output powers of the LEDs decrease rapidly at temperatures above 153 K suggesting that nonradiative and Auger recombinations are the main limitation of the device performance at high temperatures.     

Effect of rapid thermal annealing on Zn1‐xCdxO layers grown by radio‐frequency magnetron co‐sputtering

Zn_1‐xCd_xO layers were deposited on the sapphire substrate using the radio‐frequency magnetron co‐sputtering system. The grown Zn_1‐xCd_xO layers were carried out in the post‐annealing treatment for 1 min at the 800 °C oxygen‐ambient by the rapid thermal annealing (RTA) method. X‐ray diffraction (XRD) experiment shows that the Zn_1‐xCd_xO layers are changed from the single phase of the hexagonal structure at 0≤x ≤0.08 to the double phase of hexagonal‐and‐cubic structure at x =0.13. Thus, the maximum Cd‐composition ratio with the hexagonal structure was found out to be x =0.08. Also, the crystallinity of Zn_1‐xCd_xO layers at x =0.13 was remarkably improved by the RTA annealing treatment. This crystal quality improvement was thought to be associated with the relaxation of the compressive strain remaining in the Zn_1‐xCd_xO layers. Therefore, the results of XRD and transmittance lead that the crystal quality of the Zn_1‐xCd_xO layers forming the hexagonal ZnO phase is better than that forming the cubic CdO phase. Consequently, the reliable formation and the crystallinity of the Zn_1‐xCd_xO layers were achieved by using the RTA method of short‐time thermal‐annealing at the high temperature. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Phase transformation in the system TlBi(Te1‐xSex)2

TlBiTe₂ and TlBiSe₂ ‐ that are ternary analogs of the IV‐VI semiconductors ‐, although they crystallize in the same space group R m (D⁵_3d), exhibit different behaviour during heating. The observed phase transformation depends on Se content (x) in the system TlBi(Te_1‐xSe_x)₂ and the transformation disappears by increasing Se content after a certain value (x = 0.25). This dependence is examined through the analysis of the DSC non‐isothermal measurements and an attempt for the explanation of the observed behaviour is undertaken through the consideration of off‐center atoms. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Paramagnetic behavior of Zn1−xMnxO at room temperature

Mn‐doped ZnO were synthesized by solid state reaction and sol‐gel method respectively. It was found that samples synthesized by solid state reaction containing Mn₂O₃ and MnO₂ are a mixture of ferromagnetic and paramagnetic phases. Contrary, samples without second phases were found to be paramagnetic at room temperature. According to previous report, interface effects between Zn‐rich Mn₂O₃ and MnO₂ interfaces may be the origin of the ferromagnetic behavior observed in our samples prepared by solid reaction, so the alloy of Zn_1−xMn_xO may be paramagnetic at room temperature. Prepared by sol‐gel technique, the samples without second phases in the XRD patterns are also room‐temperature paramagnetic. Therefore we believe that the magnetism of Zn_1−xMn_xO is paramagnetic at room temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and electrical properties of Mg‐doped ZnO nanoparticles

Mg_xZn_1‐xO (x=0.01‐0.3) nanoparticles were synthesized by the sol‐gel technique using solutions of Mg and Zn based organometalic compounds. The electrical properties of Mg doped zinc oxide (ZnO) were studied within wide temperature range from 300 to 500 K under the N₂ gas flow (flow rate: 20 sccm) and in the frequency range from 40 Hz to 1 MHz for ac electrical measurements. The dc conductivities and the activation energies were found to be in the range of 10^‐9‐10^‐6 S/cm at the room temperature and 0.26‐0.86 eV respectively depending on doping rate of these samples. The ac conductivity was well represented by the power law Aω^s. The conduction mechanism for all doped ZnO could be related to correlated barrier hopping (CBH) model. The complex impedance plots (Nyquist plot) showed the data points lying on a single semicircle, implying the response originated from a single capacitive element corresponding to the nanoparticle grains. The crystal structures of the Mg_xZn_1‐xO nanoparticles were characterized using X‐ray diffraction. The calculated average particle sizes values of Zn_1‐xMg_xO samples are found between 29.72 and 22.43 nm using the Sherrer equation. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and characterization of nano ZnS doped with Mn

Nanocrystalline samples of Zn_1‐xMn_xS (x = 0.0, 0.02, 0.04) were synthesized by chemical precipitation method and characterized for magnetism. EPR studies showed an evidence of ferromagnetism around room temperature. Hysterisis from vibrating sample magnetometer supports the observation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and optical properties of Mg‐doped ZnO nanoparticles by polyacrylamide method

Mg‐doped ZnO (Mg_xZn_1‐xO) nanoparticles with precise stoichiometry are synthesized through polyacrylamide polymer method. Calcination of the polymer precursor at 650 °C gives particles of the homogeneous solid solution of the (Mg_xZn_1‐xO) system in the composition range (x < 0.15). ZnO doping with Mg causes shrinkage of lattice parameter c. The synthesized Mg_xZn_1‐xO nanoparticles are typically with the diameter of 70–85 nm. Blue shift of band gap with the Mg‐content is demonstrated, and photoluminescence (PL) from ZnO has been found to be tunable in a wide range from green to blue through Mg doping. The blue‐related PL therefore appeared to be caused by energetic shifts of the valence band and/or the conduction band of ZnO. Mg_xZn_1‐xO nanoparticles synthesized by polyacrylamide‐gel method after modified by polyethylene glycol surfactant have a remarkable improvement of stability in the ethanol solvent, indicating that these MZO nanoparticles could be considered as the candidate for the application of solution–processed technologies for optoelectronics at ambient temperature conditions.     

Experimental and first‐principle investigation of Cu‐doped ZnO ferromagnetic powders

Zn_1‐xCu_x O powders were synthesized by using sol‐gel method. Electronic band structure and ferromagnetic properties of Zn_1‐xCu_x O powders were studied experimentally and theoretically. The simulations are based upon the Perdew‐Burke‐Ernzerhof form of generalized gradient approximation within the density functional theory. Zn_1‐xCu_x O shows dilute ferromagnetism, as a saturated magnetization of 0.9×10^‐3emu/g was observed for Zn_0.95Cu_0.05O powders. The strong p ‐d hybridization between Cu and its four neighbouring O atoms is responsible for the ferromagnetism. Comparing with ZnO whose Fermi level locates at the valence band maximum, the Fermi level of the Zn_1‐xCu_x O shifts upward into the valence band and hence the Zn_1‐xCu_x O system exhibits theoretically a p ‐type metallic semiconducting property. The Zn_1‐xCu_x O system may be a potential candidate in spintronics. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characterization of the optical properties of LPE InxGa1−xAsyP1−y thin layers grown on InP

A series of In_xGa_1?xAs_yP_1?y single-crystal thin layers have been grown on an InP substrate in a vertical liquid phase epitaxy furnace with a rotating slide boat system. The optical properties of these LPE quaternary alloys lattice-matched to InP have been investigated mainly by photoluminescence and electroreflectance measurements. Photoluminescence spectra of In_xGa_1?xAs_y P_1?y epitaxial layers are dominated by a strong luminescence line due to band-edge emission. At low temperatures, around 4.2 K, we have observed complicated luminescence bands with many fine structures. Electroreflectance spectra for the LPE In_xGa_1?xAs_yP_1?y layers are sufficiently broad to fulfil the low-field condition, and the analysis enabled us to determine precisely the band gap energy.     

Co nanoclusters as origin of ferromagnetism in sol‐gel synthesized Zn1‐xCoxO (x = 0.05, 0.10 and 0.15) samples

We report on the structural and magnetic properties of the polycrystalline samples of Zn_1‐xCo_xO (x = 0.05, 0.10 and 0.15) synthesized via sol‐gel route. The air sintered samples of all compositions exhibit paramagnetic behaviour at room temperature, on the other hand the same samples on annealing in Ar/H₂ atmosphere show room temperature ferromagnetism (RTFM) with enhanced magnetization. The value of magnetization increases with the Co concentration (x) in both the air sintered and Ar/H₂ annealed samples. The observed ferromagnetism in the Ar/H₂ annealed Zn_1‐xCo_xO (x = 0.05, 0.10 and 0.15) samples is attributed to the presence of Co nanoclusters as detected by XRD and FESEM‐EDAX. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Some physical and magnetic properties of Mg‐Zn ferrite

Some physical properties (such as lattice parameter, density and porosity) and magnetic properties of the system Mg_1‐xZn_xFe₂O₄; where x=0,0.1,0.2,0.3,0.4,0.5and 0.6 have been studied. It was found that the lattice parameter increases with increasing the zinc concentration. The composition dependence of the physical properties is divided into two regions. The first one is for x ≤ 0.3 and the second one is for x > 0.3. From the magnetization measurements, the basic composition (MgFe₂O₄) shows the lowest magnetization, while the composition of x=0.4 shows the highest one. The behaviour of magnetization M versus composition shows also two regions for x <>0.3. The behaviour of M versus x was discussed in the bases of cation distribution. From the B‐H loops, the remanence induction B_r, saturation induction B_s and the coercive force H_c were determined and studied with x. The Curie temperature T_C was determined from the measurements of the initial permeability μ_i versus temperature. It was found T_C decreases with increasing Zn‐content. Also paramagnetic temperature T_P was determined from the behaviour of M_S vs. T. In general it was found T_P > T_C by about 7‐10 K.     

Optical Properties of Bi2Se3‐xAsx Single Crystals

Bi₂Se_3‐xAs_x single crystals with the As content of c_As = 0 to 2.0x10¹⁹ atoms/cm³ prepared from the elements of 5N purity by means of a modified Bridgman method were characterized by measurements of infrared reflectance and transmittance. Values of the plasma resonance frequency omega_p, optical relaxation time tau, and high‐frequency permittivity were determined by fitting the Drude‐Zener formulas to the reflectance spectra. It was found that the substitution of As atoms for Se atoms in the Bi₂Se₃ crystal lattice leads to a decrease in the omega_p values. This effect is accounted for by a model of point defects in the crystal lattice of Bi₂Se_3‐xAs_x. The dependences of the absorption coefficient K on the energy of incident photons were determined from the transmittance spectra. The optical width of the energy gap is found to decrease with increasing As content. The values of the exponent b from the relation of K ∼ lamda^b for the long‐wavelength absorption edge range within the interval 2.0 to 2.3, i.e. the dominant scattering mechanism of free current carriers in Bi₂Se_3‐xAs_x crystals is the scattering by acoustic phonons.     

Studies on electrical conduction behavior of La1‐3xCaxBaxSrxMnO3 synthesized by chemical route

In the manganite La_1‐xM_xMnO₃ (M = Ca, Ba, Sr) the doping concentration introduces a mixed valency (Mn³⁺, Mn⁴⁺) which governs the magnetic and electrical properties of the compound. The perovskite oxides La_1‐3xCa_xBa_xSr_xMnO₃ (x = 0.00, 0.05, 0.10) were prepared by chemical method. Single‐phase formation is confirmed by XRD studies. The electrical behavior of compositions with x = 0.00, 0.05 and 0.10 in the system La_1‐3xCa_xBa_xSr_xMnO₃ was studied in the temperature range 300‐420 K. It is observed that conductivity decreases with increasing temperature as well as dopants concentration. Metallic behavior of these compositions decreases with increasing dopants concentration (x). The microstructures of these samples have been characterized using scanning electron microscopy (SEM). (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)