Cu掺杂对ZnO基薄膜光学及磁学性能影响

本文采用脉冲激光沉积(PLD)方法在单晶Si(100)衬底上沿c轴方向生长出单晶ZnCoAlO薄膜,并通过加镀Cu层调节薄膜的光学和磁学特性。采用X射线衍射仪(XRD),光致发光光谱仪,振动样品磁强计(VSM)和霍尔效应仪对薄膜的结构、光学和磁学性能进行了研究。实验表明,样品均具有纤锌矿结构并沿(002)面择优生长。加镀Cu层之后,薄膜紫外发光得到增强,掺杂导致薄膜ZnO晶格能带间隙变宽,并使得近带边激子发光增强。同时发现,在室温下Cu离子对薄膜磁性和电子浓度产生影响,Cu掺杂可以改变薄膜中载流子浓度,并影响原有磁性的双交换机理。     

氧气流量对射频磁控溅射制备Cu_2O薄膜性能的影响

通过磁控溅射方法在玻璃衬底上制备Cu2O薄膜,采用X射线衍射(XRD)、分光光度计、原子力显微镜(AFM)和X射线光电子能谱(XPS)等研究了氧气流量对Cu2O薄膜性能的影响。结果表明:氧气流量为4.2 sccm时,薄膜为单相的Cu2O,具有较高的结晶质量和可见光透过率,光学带隙为2.29 eV,薄膜的导电类型是p型且空穴浓度为2×1016cm-3。通过XPS能谱分析Cu 2p和O 1s结合能,确定了薄膜中Cu以+1价存在。     

合成CVD金刚石涂层用硬质合金基体预处理工艺优化研究

以CH_3COCH_3和H_2为反应气源,采用热丝CVD法在经过两步法和三步法预处理的YG6硬质合金(WC-6wt%Co)基体上沉积金刚石涂层。利用扫描电子显微镜和能谱仪分析检测预处理后的YG6基体的表面形貌和钴含量,通过对比三步法与两步法的预处理结果确定三步法最佳工艺。利用扫描电镜、X射线衍射仪和硬度计检测所得金刚石涂层的表面形貌、结晶性和膜基结合性。结果表明:三步法最佳工艺为先采用酸溶液腐蚀20 s,然后采用碱溶液腐蚀20 min,最后继续用酸溶液腐蚀3 min。三步法预处理后的YG6基体获得的金刚石薄膜生长更加均匀致密,晶粒取向更高,膜基结合性能更好。     

Cu(In,Ga)Se_2薄膜表面镓(Ga)含量分布对太阳电池性能的影响

本文利用三步法共蒸发制备Cu(In,Ga)Se2多晶薄膜吸收层,通过改变第三步Ga的蒸发温度控制薄膜表面Ga的含量及其分布。随着吸收层表面Ga含量的增大,空间电荷区带隙变宽,电池的开路电压Voc明显增大。同时,Ga的梯度分布有效地扩宽了吸收层的光谱响应范围,减小了由于禁带宽度增大所引起的短路电流Jsc的损失,从而有效地提高了电池的转换效率。     

Ga源温度对共蒸发三步法制备Cu(In,Ga)Se_2太阳电池的影响

利用共蒸发三步法制备了Cu(In,Ga)Se2(CIGS)薄膜,并通过调整制备工艺中的一、三步的金属镓(Ga)的温度,改变Ga含量的梯度分布,研究不同梯度分布对CIGS薄膜及电池性能的影响。从而优化了电池带隙梯度分布,使电池的开路电压Voc在提高的同时,最大程度的减小了Jsc的损失。优化后薄膜表面的结晶情况得到改善,电池的结界面和二极管特性也得到相应的提高。量子效率测试发现,优化后的CIGS太阳电池在较长波段中(520~1100nm)的光子吸收损失大大减小。     

简易溶液法快速制备Cu_2ZnSnS_4纳米晶工艺研究

采用一种简易溶液法成功快速制备出低成本薄膜太阳能电池用Cu2ZnSnS4(CZTS)纳米晶。探讨合成温度和时间对CZTS纳米晶的结构、形貌、元素比例及光学特性的影响,实现可控的CZTS纳米晶合成。以上特性分别采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、能量色散谱仪(EDX)、紫外-可见光谱仪(UV-vis)进行表征。结果表明:温度为250℃,时间为1 h时可获得锌黄锡矿结构,团聚颗粒约为200~500 nm,化学计量比约为Cu∶Zn∶Sn∶S=2.17∶1∶1.23∶4.69,禁带宽度为1.5 eV的纳米晶,适合印刷法制备CZTS薄膜太阳能电池吸收层。     

Cu过量对Cu1+x Al1-x O2(0≤x≤0.04)薄膜结构与光电性能的影响

以单相多晶Cu1+x Al1-x O2陶瓷做靶材,采用射频磁控溅射方法在石英衬底上沉积了Cu过量的Cu1+x Al1-x O2(0≤x≤0.04)薄膜.通过X射线衍射(XRD)、紫外吸收光谱以及电导率的测试,表征了不同含Cu量Cu1+x Al1-x O2薄膜的结构与光电性能.结果表明,沉积态薄膜经退火处理后,由非晶转变为具有铜铁矿结构的纯相Cu1+x Al1-x O2;退火态薄膜在可见光区域的平均透过率约为55;,平均可见光透过率不受Cu含量的影响;退火态薄膜样品的室温电导率随Cu含量的增加而增大,Cu1.04 Al0.96 O2的室温电导率最高,为1.22×10-2 S/cm;在近室温区(200～300 K),退火态薄膜均很好地符合Arrhenius热激活模式.     

p型Cu_2O半导体薄膜的电化学沉积研究

以透明导电玻璃(ITO)和铜片为工作电极,用简单铜盐通过阴极还原制备了Cu2O 薄膜.采用X射线衍射(XRD) 和扫描电镜(SEM)研究了反应温度、pH值和电流密度对Cu2O 薄膜的微观结构和表面形貌的影响,并对薄膜的生长机理进行了讨论.结果表明:溶液的温度对Cu2O晶体的微观结构无显著影响,而溶液的pH值对Cu2O 的生长取向影响明显.在双电极的作用下,电沉积Cu2O薄膜的工作电流可以达到6 mA·cm-2,远远高于文献报导在三电极体系下低于1 mA·cm-2的工作电流密度.     

基于蒙脱石和层状双氢氧化物纳米剥离的层层自组装异构薄膜制备

以乙酸乙酯为剥离介质,采用超声法剥离有机蒙脱石(CTA-MMT)和层状双氢氧化物(Mg Al-SDS-LDH),以聚乙烯醇(PVA)为交联剂,采用层层自组装(LBL)的方法制备了蒙脱石-层状双氢氧化物异构薄膜(PVA/MMT/PVA/LDH)n。采用X射线衍射分析(XRD)、透射电子显微镜(TEM)、扫描电子显微镜(SEM)、原子力显微镜(AFM)和紫外-可见光分光光度计对样品进行了表征。结果表明,超声剥离处理后的CTA-MMT和Mg Al-SDS-LDH片层厚度分别达到17 nm和12 nm。(PVA/MMT/PVA/LDH)n异构薄膜层间距为1.81 nm,一个组装循环得到以MMT和LDH纳米片层构成薄膜单循环片层,厚度约为170 nm。薄膜对264 nm左右的光呈现强烈的吸收带,并且吸收强度与薄膜厚度之间呈线性关系,表明薄膜单元层具有良好均一性。     

离子束溅射制备Si/Ge多层膜及红外吸收性能研究

采用离子束溅射方法在S i衬底上制备S i/Ge多层膜。通过改变生长温度、溅射速率等因素得到一系列S i/Ge多层膜样品。通过X射线衍射、拉曼散射、原子力显微分析(AFM)等表征方法研究薄膜结构与生长条件的关系。在小束流(10mA)、室温条件下制备出界面清晰、周期完整的S i/Ge多层膜。通过红外吸收谱的测量发现薄膜样品具有较好的红外吸收性能。     

蓝宝石火花塞

在如何提高火花塞的工作质量方面有多种方法,但是其中最重要的一个问题还没有得到解决,那就是火花塞工作的热学模型问题。理想的火花塞应该能在点火的瞬间被立刻加热,并且在接下来的电脉冲过程中迅速冷却,由此在热量的存储与散发之间取得平衡,以避免自点火。本文力图展示一种具有自动调节源于点火区域热流能力的火花塞,其技术的关键是顶部绝缘体材料,它是由蓝宝石单晶制作,而非传统的氧化铝陶瓷。     

抗"灰迹"KTP晶体光学性能研究

用改进的熔盐顶部籽晶法生长了KTiOPO4(KTP)晶体并对该晶体进行了抗"灰迹"性能测试.测试表明,在功率密度为120kW/cm2的1064nm激光和10kW/cm2的532nm激光共同照射1000s后, 晶体在633nm处的吸收依然维持在1.05×10-4/cm左右,表明该晶体比普通KTP晶体具有更高的抗 "灰迹"性能.透过率测试表明,用本方法生长的KTP晶体在波长短于500nm的区域比普通KTP晶体有更高的透过率.通过实验测定,得出该晶体在室温下1064nm倍频Ⅱ类相位匹配角θ=90°时φ=24.40°.     

“三明治”PbS纳米晶/rGO复合材料的制备及其对NH_3的室温气敏性能研究

采用一步溶液法制备"三明治"PbS纳米晶/rGO复合材料,通过X射线衍射仪和场发射扫描电子显微镜对样品的晶体结构和表面形貌进行表征,并制作旁热式气敏元器件,测试其气敏特性。研究结果表明在PbS纳米晶/rGO复合材料中,PbS纳米晶均匀负载在rGO片层上,且复合材料存在类似"三明治"的三维结构。该复合材料在室温下对NH_3具有良好检测能力,对1000 ppm NH_3的灵敏度达到3.45,与纯PbS纳米晶及rGO相比,气敏性能得到显著提升,其最低检测极限为1 ppm,且具有良好的氨气选择性。对"三明治"PbS纳米晶/rGO复合材料气敏机理进行分析认为,rGO加入起到载流子传输层的作用,三维结构增加气体扩散速度及吸附面积。三明治状PbS纳米晶/rGO复合材料因其特殊结构及优异的气敏性能,有望在气敏领域得到广泛应用。     

A New <Emphasis Type="Italic">N</Emphasis>,<Emphasis Type="Italic">N</Emphasis>-Dimethyl Purine from an Australian <Emphasis Type="Italic">Dictyoceratid Sponge</Emphasis>

Abstract  

N6-methyl mucronatine (C₈H₁₂N₅O) has been isolated from a dictyoceratid sponge collected in South East Queensland. The solid state structure of the new metabolite (I) was confirmed by X-ray crystallography, while an NMR study in d ₄-MeOH reveals the presence of a minor tautomer identified as (II).     

Growth and characterization of pendeo-epitaxial GaN on 4H–SiC substrates

Growth on AlN/4H–SiC substrates of coalesced, non-polar GaN films having volumes of material with reduced densities of dislocations and stacking faults has been achieved from etched stripes via the statistical and experimental determination of the effect of temperature and V/III ratio on the lateral and vertical growth rates of the GaN{0 0 0 1} faces combined with pendeo-epitaxy. AFM of the uncoalesced GaN(0 0 0 1) and GaN vertical faces revealed growth steps with some steps terminating at dislocations on the former and a pitted surface without growth steps, indicative of decomposition, on the latter. Coalescence was achieved via (a) a two-step route and the parameters of (1) and V/III=1323 for 40 min and (2) 1020 °C and V/III=660 for 40 min and (b) a one-step route that employed and a V/III ratio=660 for 6 h. The densities of dislocations in the GaN grown vertically over and laterally from the stripes were 4×10¹⁰ cm⁻² and 2×10⁸ cm⁻², respectively; the densities of stacking fault in these volumes were 1×10⁶ cm⁻¹ and 2×10⁴ cm⁻¹, respectively. The defects in the wing material were observed primarily at the bottom of the film where lateral growth of the GaN occurred from the AlN and the SiC. Plan view AFM also revealed different microstructures and a reduction in the RMS roughness values from 1.2 to 0.95 nm in these respective regions.     

Structure of 6,13-bis(<Emphasis Type="Italic">N</Emphasis>, <Emphasis Type="Italic">N</Emphasis>-dimethylcarbamoyl) thioquinanthrene

The crystal structure of 6,13-bis-(N,N-dimethylcarbamoyl)thioquinanthrene 3 has been determined as monoclinic, with space group P2(1)/c with lattice parameters a = 10.044(2) Å, b = 21.385(4) Å, c = 10.889(3) Å, = 102.92(3)°, Z = 4 and D_calc = 1.342 Mg/m³. The middle 1,4-dithiin ring in the title compound 3, C₂₄H₂₀N₄O₂S₂ is in a boat conformation with the dihedral angle between the planes of the aromatic rings 132.45(8)°.     

Crystal and Molecular Structures of Di-1-Adamantylthiophosphinic Chloride, <Emphasis Type="Italic">P</Emphasis>,<Emphasis Type="Italic">P</Emphasis>-Diphenyl-<Emphasis Type="Italic">N</Emphasis>-Benzyl Phosphinothioic- and Selenoic- Amides

Abstract  Synthesis and X-ray structural determination of three phosphorus compounds are reported. (3b) is monoclinic P2(1)/c with a = 11.852(1), b = 12.825(1), c = 12.445(1) ?, β = 103.693(1)o; (4a) and (4b) are monoclinic P2(1)/n with a = 12.1422(16), b = 9.0860(12), c = 14.845(2) ?, β = 96.498(3)o for (4a), and a = 12.2714(16), b = 9.2812(12), c = 14.800(2) ?, β = 97.176(2)o for (4b). They all exhibit distorted tetrahedral geometry about the P atom. Ph₂P(X)NHC₇H₇ (X=S (4a) and X=Se (4b)) show typical P–S and P–Se double bond distances and P–N single bonds, while P–S bond in 1-Ad₂P(S)Cl (3b) is comparable to P–S single bonded probably due to the largeness of 1-adamantyl groups. Graphical Abstract  Synthesis and X-ray structural determination of 1-Ad₂P(S)Cl (3b), Ph₂P(S)NHC₇H₇ (4a) and Ph₂P(Se)NHC₇H₇ (4b) are reported.      

Electron diffraction study of 1<Emphasis Type="Italic">M</Emphasis> illites with interstratified <Emphasis Type="Italic">trans</Emphasis>- and <Emphasis Type="Italic">cis</Emphasis>-vacant 2 : 1 layers

Illites from the volcanogenic Zn-Au-Ag sulfide deposit Galkinskoe (Northern Urals) have been investigated using oblique-texture electron diffraction patterns in combination with the simulation of diffraction effects. Along with single-phase tv/cv1M illites, the structures of which are formed by statistically interstratified dioctahedral 2: 1 layers with vacant trans- or cis-octahedra, illites in the form of a mixture of two interstratified tv/cv1M phases, with the dominance of tv- or cv layers, are identified. It is shown that in the latter case the diffraction pattern can also be interpreted within the single-phase tv/cv model, provided that the tv- and cv layers are distributed with some tendency to segregate. The structural features indicating the preference of the two-phase model are analyzed.     

Crystal Structure and Conformational Analysis of 4-[(<Emphasis Type="Italic">p</Emphasis>-<Emphasis Type="Italic">N</Emphasis>,<Emphasis Type="Italic">N</Emphasis>-Dimethylamino)Benzylidene]-2-Phenyloxazole-5-One

Abstract  

Molecular and crystal structure of 4-[(p-N,N-dimethylamino)benzylidene]-2-phenyloxazol-5-one, C₁₈H₁₆N₂O₂, have been determined by single crystal X-ray diffraction study. The title compound is monoclinic, with a = 12.1704(23) ?, b = 3.9810(5) ?, c = 30.9603(56) ?, β = 101.176(15)°, Z = 4, D _x = 1.32 g/cm³, μ(Mo Kα) = 0.087 mm⁻¹, and space group is P12₁/c1. The structure was solved by direct methods and refined to a final R = 0.047 for 3166 reflections with I > 2σ(I). The crystal structure is stabilized by C–H⋯O and C–H⋯N type intra-molecular, C–H⋯O type inter-molecular interactions. To enlighten the flexibility and the geometric isomerism (E or Z) of the title compound, the selected torsion angle is varied from −180 to 180° in every 10° separately and molecular energy profile is calculated and analyzed.