Ca^2＋对KDP晶体的光损伤阈值的影响

Ca2 是KDP原料中一种常见的杂质离子,这种杂质不仅会影响晶体的生长过程,而且会加重晶体的光散射.通过传统降温法和点籽晶快速生长法生长不同Ca2 掺杂浓度的KDP晶体样品,对样品进行激光损伤实验,结果表明,Ca2 的存在降低了KDP晶体的光损伤阈值,其原因主要在于Ca2 掺杂导致晶体内部缺陷增多,内应力增加以及晶体中的散射颗粒密度增大使晶体光吸收加重.     

P和Al掺杂立方相Ca2Si电子结构及光学性质的第一性原理计算

采用基于密度泛函理论的第一性原理平面波超软贋势方法,分别计算了立方相Ca2Si及掺杂P、Al的电子结构和光学性质.结果表明:立方相Ca2Si是带隙为0.55483 eV的直接带隙半导体,价带主要由Si的3p和Ca的3d、4s态电子构成,导带主要由Ca 的3d、4s和Si的3p态电子共同构成,静态介电常数为11.92474,折射率为3.45322.Ca2Si掺P后,Ca2Si转变为n型半导体,其带隙值是0.42808 V,价带主要由Si、Al的3p和Ca的3d、4s态电子构成,导带主要由Ca的3d、Al的3p、3s和Si的3p态电子构成.静态介电常数为7.92698,折射率为2.81549.掺Al后, Ca2Si转变为n型半导体,带隙值是0.26317 eV,费米面附近的价带主要由Si、P的3p和Ca的3d态电子构成,导带主要由Ca的3d 4s、P的3p、3s和Si的3p态电子构成.静态介电常数为17.02409,折射率为4.12603.掺P和Al均降低Ca2Si的反射率,提高Ca2Si的吸收系数,提高Ca2Si的光利用率.说明掺杂能够有效地改变Ca2Si的电子结构和光学性质,为Ca2Si材料的研发和应用提供理论依据.     

Ag,N共掺锐钛矿TiO2电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT)的第一性原理研究了未掺杂,Ag、N单掺杂及Ag-N共掺杂锐钛矿TiO2的晶体结构,电子结构及光学特性.研究结果表明,掺杂后锐钛矿TiO2晶胞膨胀,晶格发生明显畸变;Ag-N共掺杂TiO2禁带中引入新的杂质能级,导带下移,禁带宽度减小到1.34 eV,TiO2的光吸收带边发生明显红移,在紫外区和可见光区的吸收系数增大,提高了TiO2的光催化效率.     

高压与掺杂对KDP晶体能带结构的影响

构建了高压条件下KDP晶体的原子结构模型和掺杂有Li+、Na+、Rb+、Cs+、Be2、Mg2+、Ca2+、Cr3+、Co2+、Cu2+、Al3+、La3+等12种阳离子的KDP晶体超级原胞结构模型,采用第一性原理计算了高压下的KDP晶体的能带结构和态密度,研究了替位式掺杂的形成能以及不同掺杂离子对电子结构的影响.结果表明:KDP晶体的带隙宽度随着压强的增加呈线性增长趋势;Co2+、Cu2+、La3+等重金属离子具有较低的掺杂形成能而易于形成替位式掺杂;碱金属离子掺杂后其带隙比二价离子和三价离子替位掺杂情形大得多,且随原子序数增大而增大.文章还依据能带理论构建了材料的电导率和热导率与带隙的关联式,分析讨论了高压和掺杂对KDP晶体热导率和激光损伤的影响.     

Pt掺杂CdS光学性质的第一性原理研究

采用基于密度泛函理论的平面波超软赝势方法分析了CdS和Pt掺杂CdS的几何、电子结构和光学性质,计算结果表明Pt掺杂的CdS结构引入了由Pt贡献的导电载流子,增强了CdS的电导率,另外,费米能级下移进入价带.研究表明,Pt掺杂的CdS结构在费米能级附近出现了杂质能级,这是由Pt的5d态电子所形成;在光学性质上,Pt掺杂的CdS在可见光区的吸收系数比理想CdS高,能量损失峰出现红移现象,可见,Pt掺杂的CdS晶体具有更高的光催化活性.     

新型Q开关晶体Cr4+∶YAG的生长和退火研究

采用二价Ca离子作为电荷补偿离子由提拉法生长出了具有高光学质量的调Q开关晶体Cr4+∶YAG并对该晶体进行了退火研究.吸收光谱测量表明原生态晶体中已有少量Cr4+离子存在.晶体经空气中退火后Cr4+离子浓度和1.06μm处的吸收系数均显著提高.晶体生长和退火实验显示出晶体中Cr4+离子的浓度不仅取决于掺杂的Cr3+离子的浓度,而且同晶体中的Ca/Cr浓度比密切相关.     

掺杂Rh离子SrTiO3晶体缺陷形成能和电子结构的研究

使用CRYSTAL-09软件包模拟计算了完整SrTiO3晶体的电子结构以及Rh离子掺杂SrTiO3晶体的缺陷形成能和电子结构.结果表明Rh离子在晶体中将优先占据Sr格位;Rh掺杂SrTiO3晶体在禁带中出现了一个4d态杂质能级,导致禁带宽度减小,可见光区的光催化活性提高;解释了Rh掺杂SrTiO3晶体具有较高H2产量的原因机理.     

梯度掺杂的YVO4-Nd∶YVO4复合晶体

利用改进的提拉法生长了一种新型YVO₄-Nd∶YVO₄ 复合晶体,在晶体中部实现了Nd³⁺的0.10%~0.25%(原子数分数)浓度梯度掺杂。晶体中, Nd³⁺掺杂区的弱吸收系数较未掺杂区大,表现出界面吸收现象。观测了复合晶体对泵浦光的吸收和温度分布,发现晶体沿轴向的泵浦吸收相对均匀,温度梯度相对较小。未镀膜的复合晶体样品在1 064 nm波段显示了良好的连续激光性能,光-光转换效率为37.0%,斜效率为40.9%。     

掺Yb3+钇铝石榴石晶体的生长和性能研究

用提拉法生长出φ40×190mm3的掺Yb3+钇铝石榴石(Yb∶YAG)晶体,摸索出了合适的温场系统、生长工艺和热处理条件.通过测量Yb∶YAG晶体在939nm处的透过率得出了其吸收系数与原始掺杂浓度之间的关系.所生长Yb∶YAG晶体的光-光转换效率为38.6;,斜率效率达55.1;.     

不同价态稀土元素Eu掺杂锐钛矿相TiO2的电子结构及光学性质

基于密度泛函理论(DFT)的第一性原理的平面波超软赝势法对锐钛矿TiO2晶体和Eu3+,Eu2分别掺杂的锐钛矿TiO2晶体的晶格参数、能带结构、态密度、差分电荷密度以及吸收光谱进行了计算.结果表明:不同价态Eu掺杂后锐钛矿TiO2晶胞膨胀,晶格都发生畸变;同时引入了杂质能级,减小了锐钛矿相TiO2的禁带宽度,TiO2的光吸收带边发生明显红移,在紫外区和可见光区的吸收系数增大.     

CsI-LiCl共晶材料的坩埚下降法生长与闪烁性能研究

本文采用坩埚下降法,在真空密封的石英坩埚中成功生长出CsI-LiCl与CsI-LiCl:Na共晶闪烁体。通过扫描电子显微镜(SEM)观察晶体微结构表明该共晶中LiCl相与CsI相存在周期性的层状排列,CsI相的厚度在5 μm左右。共晶样品的X射线激发发射谱显示在CsI-LiCl和CsI-LiCl:Na共晶样品存在缺陷发光,在CsI-LiCl样品中还观察到了纯CsI的自陷激子(STE)发光。CsI-LiCl样品在α粒子激发下的多道能谱中观察到明显的全能峰,这一结果证明CsI-LiCl共晶可用于热中子探测的潜力。     

静电纺丝法制备CeO2微纳米纤维及其除氟性能

以聚丙烯腈(PAN)为载体,六水合硝酸铈[Ce(NO₃)₃·6H₂O]为原料,采用静电纺丝法制备了Ce(NO₃)₃/PAN纤维,在空气中热处理得到CeO₂微纳米纤维,通过XRD、BET和SEM对CeO₂微纳米纤维进行表征。采用静态吸附实验探讨了CeO₂微纳米纤维去除水溶液中氟离子的性能,考察了溶液pH值、初始氟离子浓度及共存阴离子等对吸附性能的影响。结果表明,pH=3时,CeO₂微纳米纤维对F^-的吸附性能最佳,CeO₂吸附量随着F^-浓度的增大呈上升趋势。CeO₂微纳米纤维对F^-的吸附等温线遵循Langmuir模型,二级动力学模型能很好地描述CeO₂微纳米纤维对F^-的吸附过程。CeO₂微纳米纤维的除氟性能优良,可为其实际应用提供理论参考。     

X-ray analysis of sideroxol from <Emphasis Type="Italic">Sideritis leptoclada</Emphasis>

Sideroxol (1), a kaurane diterpene which has the ent-7α,18-dihydroxy-15β,16β-epoxykaurane structure (MW = 320.47, C₂₀H₃₂O₃) was obtained from the acetone extract of Sideritis leptoclada plant as well as from some other Sideritis species. It crystallizes in the orthorhombic space group P2₁, 2₁, 2₁ with a = 10.967(3), b = 24.555(5), c = 6.372(4) Å, Dc = 1.240 g cm⁻³, Z = 4, and refines to R = 0.065 for 721 independent reflections. The skeleton consists of three fused six-membered rings and a five-membered ring with fused epoxide. The six membered rings exhibited slightly distorted chair conformation. In addition to sideroxol, two kaurane and five kaurene diterpenes were isolated from the hexane and acetone extracts of the studied plant.     

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

We have studied the optical, structural and surface morphology of doped and undoped GaN thin films. The p- and n-type thin films have been successfully prepared by low-pressure MOCVD technique by doping with Mg and Si, respectively. The different carrier concentrations were obtained in the GaN thin films by varying dopant concentrations. Photoluminescence (PL) studies were carried to find the defect levels in the doped and undoped GaN thin films at low temperature. In the undoped GaN thin films, a low intensity and broad yellow band peak was observed. The donor–acceptor pair (DAP) emission and its phonon replicas were observed in both the Si or Mg lightly doped GaN thin films. The dominance of the blue and the yellow emissions increased in the PL spectra, as the carrier concentration was increased. The XRD and SEM analyses were employed to study the structural and surface morphology of the films, respectively. Both the doped and the undoped films exhibited hexagonal structure and polycrystalline nature. Mg-doped GaN thin films showed columnar structure whereas Si-doped films exhibited spherical shape grains.     

New zeotype borophosphates with chiral tetrahedral topology: (H)0.5M1.25(H2O)1.5[BP2O8]·H2O (M = Co(II) and Mn(II))

Two new isostructural open‐framework zeotype transition metal borophosphate compounds, (H)_0.5M_1.25(H₂O)_1.5[BP₂O₈]·H₂O (M = Co(II) and Mn(II)) were synthesized by mild hydrothermal method. The structure of compounds were characterized by single‐crystal X‐ray diffraction which have ordered, alternating, vertex‐sharing BO₄, PO₄, and (MO₄)OM(H₂O)₂ groups with hexagonal, P 6₁ 2 2 (No 178) space group and unit cell parameters for Co a = 9.4960(6) Å, c = 15.6230(13) Å, for Mn a = 9.6547(12) Å, c = 15.791(3) Å, Z = 1 for both of them. TGA/DTA analysis, IR spectroscopy were used for characterization. Magnetic susceptibility measurements for both of the compound indicate strong antiferromagnetic interaction between metal centers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Solubility of Ag2O into the Na2O–B2O3–Al2O3 system

The solubility of Ag₂O was measured for the Na₂O–B₂O₃ and Na₂O–B₂O₃–Al₂O₃ system with the rotating crucible method and static method, respectively, under air atmosphere at temperatures ranging from 1273 to 1423 K. The contamination of melts from crucibles could be avoided by the rotating crucible method, with which it became possible to measure the solubility of Ag₂O for the Na₂O–B₂O₃ system above the melting point of Ag for the first time. It was found that the addition of Na₂O decreases the solubility of Ag₂O while the addition of Al₂O₃ had little effect on the solubility. The effect of Na₂O and Al₂O₃ on the solubility of Ag₂O is expressed by interaction coefficients and is analyzed in terms of the basicity of melts. The solubility of Ag₂O in Na₂O–B₂O₃–Al₂O₃ melts increased with increased temperature. This phenomena was explained by a small enthalpy change in oxidation of silver.     

Considerations on the structure and physical properties of B2O3-SiO2 and GeO2-SiO2 glasses

Data of density, refractive index and thermal expansion coefficient for B₂O₃-SiO₂ and GeO_2-SiO₂ glasses have been analyzed. The volumes of the structural units are the same found for the vitreous B₂O₃, GeO₂ and SiO₂. The volume of any structural unit is constant over the entire composition region of the glass system. The same has been found for the differential refraction and unit refraction of the structural units in these glasses. Different features are observed for the differential expansion of the structural units. There is a considerable change with composition in the differential expansion of BO₃, GeO₄ and SiO₄ units. The effect is attributed to a change in the asymmetry of vibrations with the number of Si-O-B or Si-O-Ge linkages in the matrix. The thermal expansion coefficient is mainly determined by the contribution of B₂O₃ or GeO₂ in the concerned glasses.     

Molecular structure and crystal packing of uncomplexed 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C22H18N4O2

The X-ray crystal structure of 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C₂₂H₁₈N₄O₂, is determined. The crystal packing is dominated by phenyl stacking interactions. Weak C–H···N hydrogen bonds help align the molecules. C–H··· hydrogen bonding is not apparent.     

Structural and electrical properties of vapour phase grown Cd1 − xFexTe single crystals

Cd_1 − xFe_xTe single crystals were prepared by vapour phase growth method in the composition range of 0 ≤ x ≤ 0.03. Chemical analysis, surface morphology, structural investigations and electrical properties were carried out by EDAX, SEM, XRD, TEM and transport technique, respectively. Microscopic variations between the target and actual compositions were noticed. Morphology studies revealed that dislocation aided growth is active in the present crystals. TEM and XRD studies confirmed that the samples of all compositions crystallized in zinc blende structure, and the lattice parameters varied almost linearly decreases with Fe content. At room temperature, the resistivity of the Cd_1 − xFe_xTe crystals of all compositions (x = 0.01, 0.015, 0.02, 0.025 and 0.03) lies in the range of 3.5-6.5 M Ω, the activation energies lie in the range of 63-133 meV, and the samples were show the ‘p’ type conductivity.     

空位浓度对纤锌矿CdS电子结构和光学性质影响的第一性原理研究

本文基于密度泛函理论的平面波超软赝势方法,采用第一性原理研究了含Cd空位缺陷CdS和含S空位缺陷纤锌矿CdS的几何结构、能带结构、电子态密度及光学性质。通过计算分析可知,含Cd空位缺陷的CdS体系均为p型半导体,含S空位缺陷的CdS体系跃迁方式均由直接跃迁变为间接跃迁。Cd、S空位缺陷的CdS体系的态密度总能量降低。空位CdS体系相较于本征CdS体系的静介电常数均有提高,并随着空位浓度的增大而增大,Cd空位缺陷体系更为明显,极化能力得到显著提升。空位Cd的CdS体系相较于本征CdS体系在红外波段存在明显的吸收,空位S的CdS体系相较于本征CdS体系在可见光波段存在明显的吸收。