水热法生长立方MgO微晶研究

以尿素与Mg(NO3)2·6H2O在不同的反应温度和不同物质的量配比条件下,制备出前驱体Mg5(OH)2(CO3)4·4H2O/MgCO3,经煅烧得到立方MgO微晶粉末.利用X射线衍射仪(XRD)和扫描电子显微镜(SEM)对所制得产物的晶相和形貌进行了表征.结果表明:当尿素和Mg(NO3)2·6H2O物质的量的比为2∶1时,在160℃的水热反应条件下,制备出立方MgO前驱体微晶,在1000℃煅烧2h后能够获得晶型完整、形貌规则、粒径约为5μm的MgO立方微晶.     

共沉淀法制备Ba(Fe0.5 Nb0.5)O3纳米粉体

以廉价的Nb2O5为铌源,采用共沉淀法制备了纳米Ba(Fe0.5Nb0.5)O3粉体.用XRD、TG-DSC、FT-IR、SEM等测试手段分析了烧结温度、保温时间、体系温度、pH值等对前驱体粉体的物相、形貌及晶粒大小的影响,并对粉体的磁学性能进行了表征.结果表明:合成温度在950℃,体系温度在30℃和50℃均可获得纯相立方钙钛矿结构的Ba(Fe0.5 Nb0.5)O3粉体,保温时间和pH值对粉体相结构变化无影响.在体系温度为30℃,pH=10,前驱体粉体在950℃煅烧2h后获得颗粒尺寸约30 nm的Ba(Fe05Nb0.5)O3粉体,且粉体具有弱的铁磁性.     

GaOOH和Ga2O3的制备及光学性能研究

采用水热法制备了不同形貌和尺寸的GaOOH前驱体.通过XRD、SEM和TEM进行表征,并探讨分析了GaOOH的生长机理.结果表明,前驱液的pH值对GaOOH的形貌有明显的调控作用并对其结晶度有一定影响.然后将制备的GaOOH前驱体分别在温度为600℃和900℃的空气中煅烧转化成了α-Ga2O3和3-Ga2O3.煅烧后的产物具有良好的形貌继承性.荧光光谱测试(λex=250 nm)结果显示,pH值为5时制备的GaOOH和Ga2O3的发射峰位于415 nm和465 nm,而在pH值为3和8时的发射峰均位于370 nm和465 nm.     

La掺杂CaMnO3基热电材料微观结构与热电性能研究

采用共沉淀法制备,分别在空气与混合了纳米碳粉的Al2 O3粉末(高温渗碳处理)中进行高温烧结后得到多晶钙钛矿型Ca1-xLaxMnO3(x=0,0.02,0.04,0.10)热电陶瓷,并对陶瓷样品的微观结构、热电性能进行了表征与评价.结论如下:T>700 K时,进行过高温渗碳处理的La2/C(x=0.02)系列,具有体系最大Seebeck系数绝对值240～250μV/K,功率因子PF在2.2～2.4 W·m-1·K-2,即电性能最优.所有掺杂样品较本征半导体热导率κ均有所降低.在920 K时,La2/C系列具有体系最大的热电优值ZTmax=0.067,约为同温度下未掺杂CaMnO3陶瓷ZT值的2倍.     

不同形貌MnO2的制备及其电化学性能

用化学共沉淀法和水热法制备了海胆型和纳米线型的Mn O2。采用X射线衍射仪(XRD)、扫描电镜(SEM)对电极材料的物相和形貌进行表征。采用电化学阻抗、循环伏安和恒电流充放电对其进行电化学性能测试。结果表明,采用相同材料不同制备方法得到的Mn O2具有不同的形貌。化学共沉淀法制备的海胆型Mn O2,其直径约为300~500 nm;水热法制备的纳米线型Mn O2,其直径约为10~30 nm,长度约为100~500 nm。两种形貌的Mn O2在6 mol·L-1KOH溶液中具有良好的电容特性,1 A·g-1的电流密度下,海胆型Mn O2的比电容为539 F·g-1;纳米线型Mn O2的比电容为375 F·g-1。经过1000圈的循环后,海胆型Mn O2仅损失了15%的比容量。     

SOFC阳极阻挡层La0.3Ce0.7O2-δ薄膜的制备

镓酸镧基SOFC存在的关键问题是在阳极/电解质界面发生固相反应生成绝缘相,一个根本的解决办法是在阳极与电解质之间制备一层薄且致密的阻挡层La0.3Ce0.7O2-δ(LDC30).本文采用共沉淀法制备了LDC30的前驱体,高温煅烧后,通过XRD分析和粒度分布测试,表明La2O3成功地掺杂到CeO2晶格中,制得了粒径较小的纯相LDC30粉体,并确定了最佳的煅烧条件是在1000℃下煅烧2h.采用丝网印刷法将阻挡层浆料涂覆在电解质表面并高温烧结,通过烧结收缩曲线及微观形貌观测,发现在1400℃时烧结2h可以成功的制备一层厚约10μm的致密的阻挡层薄膜,将电池的放电性能提高了44;.     

共沉淀法制备Al2O3-ZrO2复合纳米粉体

以ZrOCl2·8H2O、Al(NO3)3·9H2O、Y(NO3)3为原料,NH4HCO3 (AHC)为络合剂,采用共沉淀法制备Al2 O3-ZrO2复合纳米粉体.利用X射线衍射分析(XRD)、扫描电镜(SEM)、透射电子显微镜(TEM)、激光粒度分析仪等对Al2 O3-ZrO2复合粉体进行测试表征,详细研究了pH和AHC/Zr摩尔比对复合粉体的影响.结果表明,当前驱体的煅烧温度低于1200℃时,只形成t-ZrO2相,当煅烧温度达到1300℃时,α-Al2O3相开始形成;沉淀反应的pH和AHC/Zr摩尔比对Al2O3-ZrO2复合粉体的产率有很大的影响.在pH7、AHC/Zr =4.5:1的条件下制备前驱体,经过1300℃煅烧2h得到两相纯度高,分散性能好,粒度分布窄,平均粒径为0.75 μm的Al2O3-ZrO2复合粉体.     

低温水热制备BaZrO3微晶及其结晶动力学研究

在碱性条件下([NaOH] =0.008 mol/mL),以氯化钡(BaCl2·2H2O)和氧氯化锆(ZrOCl2·8H2O)为原料,采用传统水热法在低温下制备了锆酸钡(BaZrO3)微晶.利用XRD和SEM分别对产物进行了物相组成及微晶形貌的测试与表征.研究了反应温度为135℃时不同反应时间对产物微观结构及形貌变化的影响.结果表明:在135℃下反应2h即可合成纯相的BaZrO3粉体,且随着水热温度的升高,产物由无定形态变为类球状结构最终变为棱角分明的菱形十二面体结构,结晶程度提高,晶粒尺寸增大.通过对其结晶动力学研究,计算得到BagrO3微晶的表观成核活化能为24.36 kJ/mol.     

热处理对NiCuZn铁氧体磁性能的影响

利用化学共沉淀法制备了细小均匀的NiCuZn铁氧体前驱体粉体,通过XRD、TG-DSC、激光粒度仪(LPS)、精密阻抗分析仪、振动样品磁强计(VSM)等手段对粉体进行表征.研究前驱体的粒度分布及晶化过程,在不同的预烧温度下样品的磁性能,不同烧结温度的相结构、磁滞回线和磁性能.结果表明:前驱体粒度分布均匀,烧结后可以得到纯相的尖晶石型NiCuZn铁氧体.当预烧温度为500℃,烧结温度为900℃时,样品磁导率μi约为200,品质因数Q约为150,截止频率约为70 MHz.     

In2O3纳米粉体的制备及其气敏性能研究

以In(NO3)3·4.5H2O为原料,采用室温固相合成法、化学共沉淀法、均匀沉淀法、溶胶-凝胶法、微乳液法、水热法等六种不同方法制备In2O3纳米粉体.通过XRD、SEM、TEM等手段对粉体的物相、形貌、粒度等进行表征.结果表明,室温固相合成法、化学共沉淀法和水热法制备的粉体形貌为棒状,微乳液法、溶胶-凝胶法和均匀沉淀法制备的粉体形貌为粒径非常小的颗粒状.均匀沉淀法制备的In2O3气敏元件对Cl2具有最高的灵敏度,110 ℃工作温度下对100 ppm Cl2的灵敏度高达1175,且具有选择性好,响应-恢复时间短等特性.     

CsI-LiCl共晶材料的坩埚下降法生长与闪烁性能研究

本文采用坩埚下降法,在真空密封的石英坩埚中成功生长出CsI-LiCl与CsI-LiCl:Na共晶闪烁体。通过扫描电子显微镜(SEM)观察晶体微结构表明该共晶中LiCl相与CsI相存在周期性的层状排列,CsI相的厚度在5 μm左右。共晶样品的X射线激发发射谱显示在CsI-LiCl和CsI-LiCl:Na共晶样品存在缺陷发光,在CsI-LiCl样品中还观察到了纯CsI的自陷激子(STE)发光。CsI-LiCl样品在α粒子激发下的多道能谱中观察到明显的全能峰,这一结果证明CsI-LiCl共晶可用于热中子探测的潜力。     

静电纺丝法制备CeO2微纳米纤维及其除氟性能

以聚丙烯腈(PAN)为载体,六水合硝酸铈[Ce(NO₃)₃·6H₂O]为原料,采用静电纺丝法制备了Ce(NO₃)₃/PAN纤维,在空气中热处理得到CeO₂微纳米纤维,通过XRD、BET和SEM对CeO₂微纳米纤维进行表征。采用静态吸附实验探讨了CeO₂微纳米纤维去除水溶液中氟离子的性能,考察了溶液pH值、初始氟离子浓度及共存阴离子等对吸附性能的影响。结果表明,pH=3时,CeO₂微纳米纤维对F^-的吸附性能最佳,CeO₂吸附量随着F^-浓度的增大呈上升趋势。CeO₂微纳米纤维对F^-的吸附等温线遵循Langmuir模型,二级动力学模型能很好地描述CeO₂微纳米纤维对F^-的吸附过程。CeO₂微纳米纤维的除氟性能优良,可为其实际应用提供理论参考。     

X-ray analysis of sideroxol from <Emphasis Type="Italic">Sideritis leptoclada</Emphasis>

Sideroxol (1), a kaurane diterpene which has the ent-7α,18-dihydroxy-15β,16β-epoxykaurane structure (MW = 320.47, C₂₀H₃₂O₃) was obtained from the acetone extract of Sideritis leptoclada plant as well as from some other Sideritis species. It crystallizes in the orthorhombic space group P2₁, 2₁, 2₁ with a = 10.967(3), b = 24.555(5), c = 6.372(4) Å, Dc = 1.240 g cm⁻³, Z = 4, and refines to R = 0.065 for 721 independent reflections. The skeleton consists of three fused six-membered rings and a five-membered ring with fused epoxide. The six membered rings exhibited slightly distorted chair conformation. In addition to sideroxol, two kaurane and five kaurene diterpenes were isolated from the hexane and acetone extracts of the studied plant.     

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

We have studied the optical, structural and surface morphology of doped and undoped GaN thin films. The p- and n-type thin films have been successfully prepared by low-pressure MOCVD technique by doping with Mg and Si, respectively. The different carrier concentrations were obtained in the GaN thin films by varying dopant concentrations. Photoluminescence (PL) studies were carried to find the defect levels in the doped and undoped GaN thin films at low temperature. In the undoped GaN thin films, a low intensity and broad yellow band peak was observed. The donor–acceptor pair (DAP) emission and its phonon replicas were observed in both the Si or Mg lightly doped GaN thin films. The dominance of the blue and the yellow emissions increased in the PL spectra, as the carrier concentration was increased. The XRD and SEM analyses were employed to study the structural and surface morphology of the films, respectively. Both the doped and the undoped films exhibited hexagonal structure and polycrystalline nature. Mg-doped GaN thin films showed columnar structure whereas Si-doped films exhibited spherical shape grains.     

New zeotype borophosphates with chiral tetrahedral topology: (H)0.5M1.25(H2O)1.5[BP2O8]·H2O (M = Co(II) and Mn(II))

Two new isostructural open‐framework zeotype transition metal borophosphate compounds, (H)_0.5M_1.25(H₂O)_1.5[BP₂O₈]·H₂O (M = Co(II) and Mn(II)) were synthesized by mild hydrothermal method. The structure of compounds were characterized by single‐crystal X‐ray diffraction which have ordered, alternating, vertex‐sharing BO₄, PO₄, and (MO₄)OM(H₂O)₂ groups with hexagonal, P 6₁ 2 2 (No 178) space group and unit cell parameters for Co a = 9.4960(6) Å, c = 15.6230(13) Å, for Mn a = 9.6547(12) Å, c = 15.791(3) Å, Z = 1 for both of them. TGA/DTA analysis, IR spectroscopy were used for characterization. Magnetic susceptibility measurements for both of the compound indicate strong antiferromagnetic interaction between metal centers. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Solubility of Ag2O into the Na2O–B2O3–Al2O3 system

The solubility of Ag₂O was measured for the Na₂O–B₂O₃ and Na₂O–B₂O₃–Al₂O₃ system with the rotating crucible method and static method, respectively, under air atmosphere at temperatures ranging from 1273 to 1423 K. The contamination of melts from crucibles could be avoided by the rotating crucible method, with which it became possible to measure the solubility of Ag₂O for the Na₂O–B₂O₃ system above the melting point of Ag for the first time. It was found that the addition of Na₂O decreases the solubility of Ag₂O while the addition of Al₂O₃ had little effect on the solubility. The effect of Na₂O and Al₂O₃ on the solubility of Ag₂O is expressed by interaction coefficients and is analyzed in terms of the basicity of melts. The solubility of Ag₂O in Na₂O–B₂O₃–Al₂O₃ melts increased with increased temperature. This phenomena was explained by a small enthalpy change in oxidation of silver.     

Considerations on the structure and physical properties of B2O3-SiO2 and GeO2-SiO2 glasses

Data of density, refractive index and thermal expansion coefficient for B₂O₃-SiO₂ and GeO_2-SiO₂ glasses have been analyzed. The volumes of the structural units are the same found for the vitreous B₂O₃, GeO₂ and SiO₂. The volume of any structural unit is constant over the entire composition region of the glass system. The same has been found for the differential refraction and unit refraction of the structural units in these glasses. Different features are observed for the differential expansion of the structural units. There is a considerable change with composition in the differential expansion of BO₃, GeO₄ and SiO₄ units. The effect is attributed to a change in the asymmetry of vibrations with the number of Si-O-B or Si-O-Ge linkages in the matrix. The thermal expansion coefficient is mainly determined by the contribution of B₂O₃ or GeO₂ in the concerned glasses.     

Molecular structure and crystal packing of uncomplexed 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C22H18N4O2

The X-ray crystal structure of 1,6-bis(N-cyano-p-methoxy-anilino)-2,4-hexadiyne, C₂₂H₁₈N₄O₂, is determined. The crystal packing is dominated by phenyl stacking interactions. Weak C–H···N hydrogen bonds help align the molecules. C–H··· hydrogen bonding is not apparent.     

Structural and electrical properties of vapour phase grown Cd1 − xFexTe single crystals

Cd_1 − xFe_xTe single crystals were prepared by vapour phase growth method in the composition range of 0 ≤ x ≤ 0.03. Chemical analysis, surface morphology, structural investigations and electrical properties were carried out by EDAX, SEM, XRD, TEM and transport technique, respectively. Microscopic variations between the target and actual compositions were noticed. Morphology studies revealed that dislocation aided growth is active in the present crystals. TEM and XRD studies confirmed that the samples of all compositions crystallized in zinc blende structure, and the lattice parameters varied almost linearly decreases with Fe content. At room temperature, the resistivity of the Cd_1 − xFe_xTe crystals of all compositions (x = 0.01, 0.015, 0.02, 0.025 and 0.03) lies in the range of 3.5-6.5 M Ω, the activation energies lie in the range of 63-133 meV, and the samples were show the ‘p’ type conductivity.     

空位浓度对纤锌矿CdS电子结构和光学性质影响的第一性原理研究

本文基于密度泛函理论的平面波超软赝势方法,采用第一性原理研究了含Cd空位缺陷CdS和含S空位缺陷纤锌矿CdS的几何结构、能带结构、电子态密度及光学性质。通过计算分析可知,含Cd空位缺陷的CdS体系均为p型半导体,含S空位缺陷的CdS体系跃迁方式均由直接跃迁变为间接跃迁。Cd、S空位缺陷的CdS体系的态密度总能量降低。空位CdS体系相较于本征CdS体系的静介电常数均有提高,并随着空位浓度的增大而增大,Cd空位缺陷体系更为明显,极化能力得到显著提升。空位Cd的CdS体系相较于本征CdS体系在红外波段存在明显的吸收,空位S的CdS体系相较于本征CdS体系在可见光波段存在明显的吸收。