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1.
本文研究了10;摩尔分数Gd2O3 掺杂CeO2(简称10GDC)纳米粉体的水系流延技术.重点在于探讨各种添加剂在流延浆料中的作用及其相关机理,最终得到最佳的10GDC纳米粉体流延浆料配方及其流延工艺参数.研究表明:通过使用聚丙烯酸(PAA)作为分散剂、聚乙烯醇(PVA)作为粘结剂、聚乙二醇作为塑性剂、控制浆料pH值为9.0~10.0可制备出具有高固相含量(55;体积分数)、稳定分散、具有适当粘度的浆料.该浆料流延、干燥后可以得到表面光滑、无裂纹、组分均匀、强度高、柔韧性好、生坯密度高(相对密度为51.5;)的流延坯片.  相似文献   

2.
本论文采用水系流延技术制备了95氧化铝陶瓷基片,主要对浆料中各种添加剂的作用作了系统研究.分散剂通过与无机粉料的吸附,提供双重稳定效应使浆料具有较好的分散性,实验中分散剂PAA(聚丙烯酸)最佳的用量为0.5wt;.粘结剂PVA(聚乙烯醇)最佳用量为4.5wt;.塑化剂PEG(聚乙二醇)的加入可以降低粘结剂的玻化温度,提高坯片柔韧性.塑化剂与粘结剂的用量比值(R)在1~1.2之间为宜.最终获得了具有一定强度、韧性、表面光滑的坯片,烧结出密度为3.785g/cm395氧化铝陶瓷基片.  相似文献   

3.
分别采用聚乙烯吡咯烷酮(PVP)、聚乙烯酸(PAA)、聚丙烯酰胺为分散剂,以苯丙乳液为粘结剂,丙三醇为增塑剂,去离子水为分散介质,水系流延成型法制备添加B2O3-CuO-LiCO3(BCL)玻璃料为烧结助剂的(Ca0.9375Sr0.0625)03(Li0.5Sm0.5)07TiO3 (CSLST)微波介质陶瓷,研究了分散剂种类及含量对陶瓷粉体浆料分散稳定性以及流延膜片的影响.结果表明:当以PVP为分散剂,添加量为0.8;,调节浆料的pH=10时,浆料的分散稳定性最佳,经流延后可制备得到表面光滑,均匀无裂纹的延膜片.  相似文献   

4.
纳米BaTiO_3粉体的水系流延研究   总被引:1,自引:0,他引:1  
以纳米BaTiO3粉体为原料,通过研究BaTiO3的颗粒特性、pH值、分散剂、粘结剂、塑化剂的用量等因素对浆料和流延生坯片性能的影响,成功制备了BaTiO3陶瓷基片。当pH值大于10时,可以有效抑制Ba2+的溶出;分散剂PAA的用量为1.0 wt%时,纳米BaTiO3在水体系中有最佳的分散效果;复合粘结剂的用量为5 wt%~8 wt%(D-1070∶PVA=7∶3),塑化剂与粘结剂质量比为4∶5时,可获得综合性能较好的生坯片。所得的流延生坯片相对密度达55%,BaTiO3颗粒在坯片中分散均匀。在1300℃烧结,可以得到平整、无缺陷、相对密度达98.5%的BaTiO3陶瓷基片。  相似文献   

5.
高性能氮化硅陶瓷凝胶注模成型的研究   总被引:2,自引:0,他引:2  
凝胶注模成型工艺的关键在于制备低粘度高固相体积含量的陶瓷浆料.本文以四甲基氢氧化铵(TMAH)溶液为分散剂制备氮化硅陶瓷浆料,研究了pH值、分散剂含量、助烧剂含量以及固相体积含量对氮化硅浆料流变性的影响;测定了凝胶注模成型素坯以及烧结体的力学性能.研究结果表明:当pH=10.5,分散剂加入量为6;(相对于氮化硅固相体积比),助烧剂加入量为10;(质量分数)时,浆料具有最好的流变性.根据以上制备的工艺参数,制备得到固相体积含量大于50;,具有良好流变性的浆料.铸模成型干燥后,素坯的抗弯强度达27MPa;常压烧结后氮化硅陶瓷具有优异的力学性能,其抗弯强度为730 MPa,断裂韧性高达8.8 MPa·m1/2.  相似文献   

6.
以聚乙烯醇水溶液为粘结剂,乙二醇为增塑剂,聚羧酸铵盐为分散剂,通过水基流延工艺制备了Li1.075Nb0.625Ti0.45O3(LNT)微波介质陶瓷基片.对Li1.075Nb0.625 Ti0.45O3微波介质陶瓷水基流延浆料流变特性的研究表明,当分散剂用量为0.6 wt;.粘结剂用量为5 wt;,增塑剂用量为10 wt;时,流延浆料分散稳定性良好,呈现典型的剪切变稀型流体特性,满足流延成型工艺的要求.采用该配方制备的Li1.075Nb0.625Ti0.45O3水基流延基片力学性能良好,基片的微观结构均匀.  相似文献   

7.
王科  杨建  丘泰  郭坚 《人工晶体学报》2012,41(3):753-758
采用非水基流延成型工艺制备Y3Fe4.85O12铁氧体基片,分析了分散剂种类及用量、固相含量等因素对浆料流变性能的影响,并研究制定流延膜片的排胶制度及烧结工艺。研究结果表明:分散剂OP-85的分散效果明显优于磷酸三乙酯,其最佳的分散剂添加量为0.65wt%。固相含量为25vol%和30vol%的浆料具有典型剪切变稀行为的Herschel/Bulkley流体特征,适合于流延成型。TG-DSC数据分析说明:在温度为400℃的条件下,流延膜片内的有机成分已经完全分解。当烧结温度为1490℃时,烧结膜片的体积密度达到5.09 g/cm3,接近于98%的理论密度。X射线衍射分析烧结膜片晶相纯正,扫描电镜照片显示烧结膜片的微观结构均匀。  相似文献   

8.
采用固相合成法制备了0.94(Na1/2 Bi1/2)TiO3-0.06BaTiO3(BNBT)陶瓷粉体,用传统压电陶瓷工艺制备了无铅压电陶瓷,研究了烧结工艺对其径向收缩率和相对密度的影响.结果表明:随着保温时间的增加,径向收缩率和相对密度都出现了极大值.将陶瓷粉体与分散剂均匀混合制成高固相含量的浆料,以SrTiO3(100)单晶基片做模板,通过流延法制备了晶粒定向生长模型材料,初步探讨了热处理工艺对晶粒定向生长习性的影响.结果表明,随着保温时间的增加,晶体生长层厚度增加,生长层致密度增大.  相似文献   

9.
采用凝胶注模成型超细粒度氧化锆陶瓷.使用小分子型分散剂PBTCA(2-磷酸丁烷1,2,4-三羧酸)制备高固相、低粘度浆料.探讨了分散剂含量、单体与交联剂的比例及引发剂的含量对生坯及氧化锆陶瓷性能的影响.结果表明:当固相含量为50vol;,分散剂加入量为0.2wt;,浆料的粘度为0.86 Pa·s.且当单体和交联剂的比例为15∶1、引发剂的加入量为2.5wt;时,生坯抗弯强度为29.56 MPa;经1520℃烧结后,氧化锆陶瓷体积密度和抗弯强度分别达到5.96 g/cm3和828.46 MPa.通过SEM进行断面观察,其结构均匀致密.  相似文献   

10.
凝胶注模作为一种新型成型技术,具有成本低和净尺寸成型的优点.本文通过凝胶注模成型工艺制备SiCw/B4C复合陶瓷素坯.采用绵白糖作为碳源制备低粘度的陶瓷浆料,并加入不同质量分数的SiCw,通过反应烧结制备SiCw/B4C复合陶瓷材料.对所制备的陶瓷材料的显微组织和力学性能进行研究.结果 表明:绵白糖的加入降低了陶瓷浆料粘度并提高素坯抗弯强度,但是过量的绵白糖会对素坯结构造成破坏.SiCw加入有助于复合陶瓷材料力学性能的提高;当SiCw含量为12wt;时,B4C陶瓷材料抗弯强度为201 MPa,相比未加入SiCw的B4C陶瓷材料提高了24;.  相似文献   

11.
Rakin  V. I. 《Crystallography Reports》2020,65(6):1033-1041
Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...  相似文献   

12.
The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.  相似文献   

13.
A review of measurement of thermophysical properties of silicon melt   总被引:2,自引:0,他引:2  
Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi3 existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.  相似文献   

14.
SAXS in situ experiments on the evolution of TMOS solutions during hydrolysis and polycondensation lead to power laws with scaling exponents ≈ 2. It is suggested that this could be the result of the polydispersity of the samples and that only an apparent fractal dimension can be obtained in this way. Kinetic studies tend to indicate that agglomeration in the sol is the result of a diffusion-controlled process.  相似文献   

15.
Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.  相似文献   

16.
We investigate the possibility of controlling the curvature parameters of parabolic mirrors that are modular elements of two types consisting of a base and thin inserts placed at the opposite side of the work surface. In the first type of modular elements, bending is controlled by the difference in the coefficients of the thermal expansion of the base and inserts. In the second type of elements, the profile is changed by the piezoelectric straining of the inserts under an electric field. A correlation is established between the parameters of modular elements and their surface curvature profile.  相似文献   

17.
Crystallography Reports - Macroscopic jumps of plastic deformation (few percent in amplitude) on creep curves of aluminum–magnesium alloy, caused by a local effect of concentrated solution of...  相似文献   

18.
Crystal chemical characteristics of the α and β modifications of Zn2V2O7 are calculated based on in situ high-temperature X-ray measurements. The expansion of the structure is found to be strongly anisotropic up to the negative volumetric thermal expansion of the α-Zn2V2O7 unit cell in the temperature range of 300–600°С, α V =–17.94 × 10–6 1/K. The transformations of the “hard” and “soft” sublattices with an increase temperature and at the phase transition are considered in detail. It is shown that the negative volumetric thermal expansion of α-Zn2V2O7 is due to the degeneracy of the zigzag-like shape of zinc–oxygen columns at constant distances between their vertices.  相似文献   

19.
I. Avramov 《Journal of Non》2011,357(22-23):3841-3846
The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts xi of all oxides dissolved in SiO2, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature Tr , at which viscosity is ηr = 1013 [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, li is a product of molar part xi and a specific dimensionless coefficient 0  ki  1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature Tr,SiO2 of pure SiO2.  相似文献   

20.
Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.  相似文献   

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