Hf/Ta/W单掺锐钛矿相TiO2的电子结构和光学性质的第一性原理研究

运用第一性原理赝势方法计算过渡金属X(Hf、Ta、W)单掺锐钛矿相TiO2后的电子能带结构、态密度和光学性质.计算结果表明,X掺锐钛矿相TiO2,使得掺杂后体系的体积增大,并随着X掺杂浓度的增加而增大;掺杂体系的禁带宽度都比纯TiO2的要小;由能带图可知,Ta、W单掺后,费米能级进入导带,说明这两种单掺体系属于N型半导体;随着不同浓度Hf、Ta、W的掺入,发现吸收光谱都发生了不同程度的红移,其中Ta、W掺杂体系的光响应范围覆盖了整个可见光区域,对比所有掺杂体系发现Ti0.9375 W0.0833 O2在可见光区域的光响应能力最强,这些现象说明X的掺入大大提升了TiO2光催化能力.     

稀土元素Sm与C共掺SnO2的电子结构和光学性质的第一性原理研究

利用第一性原理密度泛函理论,计算了Sm-C共掺SnO2体系的能带结构、能态密度、光学性质.计算结果表明:Sm-C近邻共掺体系的晶胞的结构比较稳定.在电子结构方面,共掺体系的禁带宽度值最小,表明电子从价带激发到导带所需的能量最小.在光学性质方面,掺杂体系都发生了红移,其中Sm-C共掺体系的红移程度最大,增强了对可见光的响应范围;在可见光区,掺杂体系的反射系数、静态介电常数、静态折射率的值都大于纯SnO2,且Sm-C共掺杂体系的值最大.     

稀土元素(Ce/Nd/Eu/Gd)与N共掺金红石相TiO2的第一性原理研究

基于密度泛函理论的第一性原理平面波超软赝势计算方法,计算分析了纯金红石相TiO2,Ce、Nd、Eu和Gd四种稀土元素单掺杂金红石相TiO2,以及与N共掺金红石相TiO2的晶体结构、电子结构和光学性质.由掺杂前后的结果分析发现,掺杂后晶胞膨胀,晶格发生畸变;费米能级上移进入导带,导带底部引入杂质能级,提高了掺杂体系的电导率和对可见光的响应;光学性质、介电函数和吸收谱掺杂体系峰值比纯TiO2小,反射谱和能量损耗谱出现红移现象.     

Ag,N共掺锐钛矿TiO2电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT)的第一性原理研究了未掺杂,Ag、N单掺杂及Ag-N共掺杂锐钛矿TiO2的晶体结构,电子结构及光学特性.研究结果表明,掺杂后锐钛矿TiO2晶胞膨胀,晶格发生明显畸变;Ag-N共掺杂TiO2禁带中引入新的杂质能级,导带下移,禁带宽度减小到1.34 eV,TiO2的光吸收带边发生明显红移,在紫外区和可见光区的吸收系数增大,提高了TiO2的光催化效率.     

Ce、N共掺杂锐钛矿相TiO2光学性能的第一性原理研究

采用密度泛函理论研究了Ce、N共掺杂锐钛矿相TiO2的电子结构、态密度和光学特性.计算结果表明,不同位置Ce、N共掺杂对TiO2的杂质形成能、带隙和光学性质是有影响的.共掺杂带隙比单掺杂TiO2的更窄,导致电子从杂质能级激发到导带的概率增大,这会提高共掺杂TiO2的光量子效率.Ce、N共掺杂后TiO2吸收带边红移至可见光区的更远处,光学吸收系数比单掺杂时更强,这主要是由Ce、N共掺杂的协同效应引起的.带边位置的计算结果表明掺杂TiO2的强氧化还原能力得到保持.因此,Ce、N共掺后TiO2在可见光区具有良好的光催化性能.     

La,Ce共掺锐钛矿相TiO2的电子结构及光学性质的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理对La和Ce单掺杂及La-Ce共掺杂锐钛矿TiO2前后的晶格参数、能带结构、态密度以及光吸收特性进行了计算。结果表明:掺杂后导致锐钛矿TiO2晶胞膨胀,晶格发生明显畸变并减小了锐钛矿相TiO2的禁带宽度;La-Ce共掺杂后引入新的杂质能级,导带下移,TiO2的光吸收带边发生明显红移,在紫外区和可见光区的吸收系数增大,有效提高了TiO2的光催化效率。     

GGA+U方法研究C与Ti掺杂GaN的电子结构和光学性质

作为一种优良的半导体材料,GaN所具有的宽禁带导致其只能吸收可见光中的紫光,因此如何增加GaN材料对可见光的利用率是一个值得研究的问题,掺杂是解决这个问题常用的手段。本文利用第一性原理的方法对本征GaN,C单掺、Ti单掺、C-Ti共掺GaN四种体系的电子结构和光学性质做了计算和分析,结果表明:掺杂后的体系都具有良好的稳定性;掺杂后各体系的体积均增大,说明杂质的引入使体系晶格发生畸变,对光生空穴-电子对的分离有促进作用,进而提高材料的光催化性能;杂质元素的引入使体系能级发生劈裂,电子跃迁更加容易;掺杂后各体系的介电函数虚部主峰均向低能区移动,吸收谱均红移至可见光区域,其中共掺体系在蓝绿光区域的吸收系数最大,由此可以推测C-Ti共掺有助于提高GaN的光催化性能。     

掺杂铁系元素对TiO2电子结构和光催化性能的影响

采用基于密度泛函理论的第一性原理平面波超软赝势方法研究了纯锐钛矿相TiO2掺杂铁系原子(Fe、Co、Ni)的电子结构和光学性质.计算结果表明,掺杂能级的形成主要是掺杂离子3d轨道的贡献,在吸收光谱的红移中起关键作用.随着掺杂原子序数的增加,TiO2的导带、价带及杂质能级向低能量方向移动,且移动的幅度逐渐减小.掺杂后TiO2的带隙宽度减小,吸收光谱移至可见光区域,与实验结果相吻合,合理的解释了Fe、Co、M金属掺杂对锐钛矿相TiO2光催化性能影响的机理.     

Cu-I掺杂锐钛矿相TiO2的第一性原理研究

采用基于密度泛函理论的第一性原理,计算了未掺杂,Cu、I单掺杂以及Cu-I共同掺杂锐钛矿相TiO2的电子结构和光学性质.结果 表明,Cu、I单独掺杂TiO2都使得吸收带边红移,I单掺时I5p跟O2p态造成禁带宽度变小,吸收带边红移,Cu单掺时Cu的3d态杂质能级引入价带顶部造成禁带宽度变小,吸收带边红移更加明显.对于Cu-I共同掺杂TiO2,Cu主要作用于价带顶,I主要作用于导带底,进而引入杂质能级,使得禁带宽度明显减小,吸收带边明显红移,通过Cu-I协同作用形成电子、空穴俘获中心,有效地阻碍了电子-空穴对的复合,提高了对可见光的催化效率.     

Cr掺杂锐钛矿相TiO2光学性质的第一性原理研究

本文对Cr掺杂TiO2进行了基于密度泛函理论的第一性原理研究.模拟计算了完整及Cr掺杂TiO2的电子结构,介电函数及吸收光谱的偏振特性.计算结果表明完整的锐钛矿型TiO2晶体在可见光范围内无吸收;掺Cr后晶体的禁带宽度减小到2.25 eV,吸收边红移,并在可见光区域出现了2.51 eV(495 nn)的吸收峰,表明Cr掺杂有利于提高TiO2对太阳光的吸收.计算结果与实验结果基本相符.     

Growth and characterization of GaP and GaAs1−xPx

The minority carrier lifetime at low and high excitation densities was determined in VPE layers of GaP and GaAs_?0.2 P_?0.8. The lifetime at high excitation densities, having a value up to ∽350 ns, is one to two orders of magnitude larger than the lifetime at low excitation densities. It is shown that impurities are involved in some saturable killer centres dominating at low excitation densities. In the case of the largest values of the minority carrier lifetime and at a dislocation density of > 10⁵ cm^?2, the non-radiative recombination at high excitation densities is shown to occur at dislocations; at lower values of the minority carrier lifetime the killer action may be due to microprecipitates. These findings also hold for LPE layers of GaP. It is shown that by measuring the minority carrier lifetime as a function of temperature a discrimination is possible between killer action due to diffusion of minorities towards sinks like dislocations or microprecipitates and due to capture by a normal point-defect type recombination centre.     

Vapour epitaxial growth and characterization of InAs1-xPx

The vapour growth of InAs_1-xP_x layers has been carried out by the hydride process. The phosphorus rich part of the system (0.7 ? x ? 1) was especially investigated. Heteroepitaxial deposits of InAs_1-xP_x and InP have been performed on substrates such as InAs, GaAs and GaP. A systematic study of the influence of the substrate orientation on the quality of the layer has been carried out by growth on hemispherical substrates. Preferential planes have been pointed out: (100) and (111) A for InAs, (111) for GaAs and GaP. The band gap variation as a function of the composition has been determined by photoluminescence at 4.2 °K and X-ray diffraction measurements. It fits the equation: E_G(x) eV = 0.425 + 0.722 x + 0.273 x² at 4.2 °K.     

Growth and properties of GaSb, Ga1-xInxSb and Ga1-xAlxSb epilayers by MOCVD

GaSb-based compound semiconductors are suitable materials for low-noise avalanche photo-diodes(APD's) and long wavelength laser diodes and photodetectors. In this paper, we review the metal organic chemical vapor deposition (MOCVD) growth conditions and the properties of GaSb, GaInSb and AlGaSb epitaxial layers, including the effects of III/V ratio, growth temperature, pressure and growth rate on electrical quality, optical properties, surface morphology and solid distribution coefficients.     

Calculation of phase diagrams in AlxIn1−xAs/InP,AsxSb1−xAl/InP and AlxIn1−xSb/InSb nano-film systems

The models for calculation of phase diagrams of semiconductor thin films with different substrates were proposed by considering the contributions of strain energy, the self-energy of misfit dislocations and surface energy to Gibbs free energy. The phase diagrams of the Al_xIn_1−xAs and As_xSb_1−xAl thin films grown on the InP (1 0 0) substrate, and the Al_xIn_1−xSb thin films grown on the InSb (1 0 0) substrate at various thicknesses were calculated. The calculated results indicate that when the thickness of film is less than 1 μm, the strain-induced zinc-blende phase appears, the region of this phase extends with decreasing of the layer thickness, and there is small effect of surface energies of liquid and solid phases on the phase diagrams.     

Glass formation and properties of chalcogenide systems XXVI: Permittivity and the structure of glasses AsxSe1−x and GexSe1−x

Correlation between the real part of the dielectric constant and the structure of glasses in the system As_xSe_1?x and Ge_xSe_1?x is reported. The mole polarization is calculated using the Sellmeyer approximation neglecting the Lorentz field. The vibrationally caused part of the permittivity which is obtained by subtraction of the mole refraction reflects ordered states in the investigated series. Besides the known crystalline compounds As₂Se₃ and As₄Se₄ the formation of the vitreous AsSe₃ and As₃Se₂ from the liquid state has to be supposed. In the system Ge_xSe_1?x the formation of the compounds GeSe₂ and Ge₂Se₃ is completed by GeSe₄ which as Ge₂Se₃ obviously only exists in the non-crystalline state. GeTe₄ has been reported as a metastable crystalline phase. The temperature dependence of ?_r of vitreous As₂Se₃ is tentatively interpreted in terms of the dipole orientation caused by conversion of the charge in valence alternation pairs.     

Growth and defect structure of CdF2 and nonstoichiometric Cd1?xRxF2 + x phases (R = rare earth elements and In). I. Growth of Cd1?xRxF2 + x single crystals (R = La-Lu, Y)

This article begins a series of publications on growth of single crystals of nonstoichiometric Cd_{1− x} R _x F_{2 + x} phases (R = La-Lu, Y, In) with the defect CaF₂-type structure, their crystal structures, and some properties. The present article is dedicated to the phase diagrams of the CdF₂-RF₃ systems in the region of Cd_1−x R _x F_{2 + x} formation. Their analysis shows that it is possible to synthesize homogeneous Cd_0.9 R _0.1F_2.1 crystals. The dependence of the defect structure of the crystals on the type and concentration of rare earth elements is studied on specially grown Cd_0.9 R _0.1F_2.1 (R = La-Lu) and Cd_1−x Y_xF_{2 + x} (x = 0.1, 0.15, 0.20) crystals. It is shown that, despite the fact that all the Cd_0.9 R _0.1F_2.1 crystals melted congruently, irrespectively of the rare earth elements used, they were rather homogeneous. The chemical compositions of the Cd_1−x R _x F_{2 + x} phases (R = Sm, Gd, Tb, Ho, and Lu) determined by the method of inductively coupled plasma atomic emission spectroscopy (ICP-AES) turned out to be close to Cd_0.9 R _0.1F_2.1. __________ Translated from Kristallografiya, Vol. 49, No. 3, 2004, pp. 566–574. Original Russian Text Copyright ? 2004 by Buchinskaya, Ryzhova, Marychev, Sobolev.     

Composition dependence of the refractive index and its photo-induced variation in the binary glass systems: Ge1−xSex and As1−xSex

The composition dependence of the refractive index and its photo-induced variation have been calculated for the Ge_1?xSe_x and As_1?xSe_x binary glass systems, using the random network model. It is found that the refractive index has a minimum in Ge_1?xSe_x at x = 0.8, while it shows a monotomic increase with increasing As content in As_1?xSe_x glasses. The refractive index of the Ge_1?xSe_x system decreases with illumination and the variation Δn of GeSe₂ is ?0.0316, while the refractive index of the As_1?xSe_x system increases with illumination and the variation of As₂Se₃ is 0.01. These results are in agreement with the experimental results reported by several workers.     

Crystal and Molecular Structures of C6H5CH2SOCH2CONHCH2C6H5 and C6H5SOCH2CON(iC3H7)2

Abstract  The crystal structures for two of the ligands C₆H₅CH₂SOCH₂CONHCH₂C₆H₅ (1) and C₆H₅SOCH₂CON(ⁱC₃H₇)₂ (2) have been determined by X-ray diffraction. These compounds crystallize in orthorhombic system with space groups and cell parameters, Pca21(no. 29), a = 8.4600(5) ?, b = 5.3534(5) ?, c = 32.136(2) ?, V = 1455.42(15) ?³ and Pna21(no. 33) a = 17.5563(11) ?, b = 5.7902(4) ?, c = 14.2866(9) ?, V = 1452.30(16) ?³, respectively. These molecules are stabilized in solid state by various intra and intermolecular hydrogen bonding interactions to give polymeric structures. The reported IR spectra of these compounds in solid state could be explained on the basis of the observed intermolecular hydrogen bonding interactions. Index Abstract  The title compounds C₆H₅CH₂SOCH₂CONHCH₂C₆H₅ (1) and C₆H₅SOCH₂CON(ⁱC₃H₇)₂ (2) were prepared by the oxidation of corresponding sulfides with H₂O₂/SeO₂ in methanol and their structures were determined. The structures show that the SO and CO groups are having “anti” configuration in 1 and “syn” configuration in 2. Electronic supplementary material  The online version of this article (doi:) contains supplementary material, which is available to authorized users.     

Structure and properties of the pure and Pr-doped Ge25Ga5Se70 and Ge30Ga5Se65 glasses

The Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ pure and Pr³⁺-doped glasses were prepared by direct synthesis from elements and PrCl₃. It was found that up to 1 mol% PrCl₃ can be introduced in the Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ glasses. Both types of glasses with overstoichiometric and substoichiometric content of Se were homogeneous and of black color. The optical energy gap is E^opt_g=2.10 eV, and the glass transition temperature is T_g=543 K for Ge₂₅Ga₅Se₇₀ and T_g=633 K for Ge₃₀Ga₅Se₆₅. The long-wavelength absorption edge is near 14 μm and it corresponds to multiphonon processes. Doping by Pr³⁺ ions creates absorption bands in transmission spectra, which can be assigned to the electron transitions from the ground ³H₄ level to the higher energy levels of Pr³⁺ ions ³H₅, ³H₆, ³F₂, ³F₃ and ³F₄, respectively. By excitation with YAG:Nd laser line (1064 nm), two intense luminescence bands (1343 and 1601 nm) were excited. The first band can be ascribed to electron transitions between ¹G₄ and ³H₅ energy levels of Pr³⁺ ions. Full width at half of maximum (FWHM) of the intensity of luminescence was found to be 70 nm for (Ge₂₅Ga₅Se₇₀)_1 − x(PrCl₃)_x and (Ge₃₀Ga₅Se₆₅)_1 − x(PrCl₃)_x glasses. The FWHM in selenide glasses is lower than in halide and sulphide glasses. The second luminescence band (1601 nm) can be probably ascribed to the transitions between ³F₃ and ³H₄ energy levels of Pr³⁺ ions. The absorption and luminescence spectra of Pr³⁺ ions in studied glasses are slightly influenced by stoichiometry of glassy matrix. The Raman spectra of studied glasses were deconvoluted and assignment of Raman bands to individual vibration modes of basic structural units was suggested. The structure of studied glasses is mainly formed by corner-sharing and edge-sharing GeSe₄ tetrahedra. The vibration modes of Ga-containing structural units were not found, they are apparently overlapping with Ge-containing structural units due to small difference between atomic weights of Ge and Ga. In the glasses with substoichiometry of Se, the Ge–Ge bonds of Ge₂Se₆ structural units were found. In Se-rich glasses the Se–Se vibration modes were found. In all studied glasses also ‘wrong' bonds between like atoms were found in small amounts. Maximum phonon energy of studied glasses is 320 cm⁻¹.