A full-coupling model of PN junctions based on the global-domain carrier motions with inclusion of the two metal/semiconductor contacts at endpoints

A full-coupling model on the current-voltage(J-V) characteristics of PN junctions is put forward in the paper by taking into account both the whole junction and the two electrode regions consisting of metal/semiconductor(M/S) contacts. The depletion layer assumption proposed by the Shockley model is discarded. Gauss' law on the electric potential and the electric field is applied in the whole junction region such that the majority-carrier currents inside and outside the P/N barrier region are able to be exactly defined and clearly calculated. Then, the stable continuity equations of the electron and hole currents are established to show the current conversion between minority-and majority-carriers inside the whole PN junction region. By analyzing all the conversion procedure, the J-V characteristics of a PN junction are obtained with good agreement to the experimental results, which are closely dependent on the minority-carrier lifetime and doping concentrations. Obviously, the study on this topic possesses referential significance to mechanically tuning the performance of piezoelectric PN junctions and piezotronic devices.     

Electromechanical Fields Near a Circular PN Junction Between Two Piezoelectric Semiconductors

We study electromechanical fields near the interface between a circular piezoelectric semiconductor cylinder and another piezoelectric semiconductor in which it is embedded.The cylinder is p-doped. The surrounding material is n-doped. The phenomenological theory of piezoelectric semiconductors consisting of the equations of piezoelectricity and the conservation of charge for holes and electrons is used. The theory is linearized for small carrier concentration perturbations. An analytical solution is obtained, showing the formation of a PN junction near the interface. Various electromechanical fields associated with the junction are calculated. The effects of a few physical parameters are examined.     

Electronic band energy of a bent ZnO piezoelectric semiconductor nanowire

The electric band energy variation in a bent piezoelectric semiconductor(PSC) nanowire of circular cross-section induced by the mechanical force is analyzed based on a six-band k · p method. The electric-mechanical fields are first obtained analytically in a cantilever bent PSC nanowire by solving the fully-coupled electro-mechanical equations. Then, the band energy is acquired numerically via the six-band Hamiltonian.By considering further the nonlinear coupling between the piezoelectric and semiconducting quantities, the contribution of the redistribution carriers to the electric field is analyzed from the Gauss' s law. Numerical examples are carried out for an n-type Zn O nanowire in different locations induced by an applied concentrated end force. They include the electric potential, heavy hole(HH), light hole(LH), spin-orbit split-off(SO),and conduction band(CB) edges along the axial and thickness directions. Our results show that the applied force has a significant effect on the band energies. For instance, on the bottom surface along the axial direction, the bandgaps near the fixed end are greater than those near the loading end, and this trend is reversed on the top surface. Moreover,at a fixed axial location, the energy level of the lower side can be enhanced by applying a bending force at the end. The present results could be of significant guidance to the electronic devices and piezotronics.     

Interfacial cracks between piezoelectric and elastic materials under in-plane electric loading

A new experimental technique for accelerated fatigue crack growth tests was recently developed (Du et al., 2001). The technique, which uses piezoelectric actuators, enables application of cyclic loading at frequencies several orders higher than that by mechanical loading. However, the validity of this technique relies on the equivalence between piezoelectric and mechanical loading. In this paper, the behavior of an interfacial crack between a piezoelectric material and an elastic material under in-plane electric loading is studied. The displacement mismatch along a bonded interface due to electric potential loading on the piezoelectric material is modeled by inserting an array of uniformly distributed dislocations along the interface. By means of Fourier transformation methods, the governing equations are converted to an integral equation, which is then converted to a standard Hilbert problem. A closed form solution for stresses, electric field, and electric displacements along the bonded interface is obtained. The results agree very well with those obtained from numerical simulations. The results show that the closed form solution is accurate not only for far field distributions of stresses and electric variables, but also for the asymptotic distributions near the crack tip. The solution also suggests the likelihood of domain switching in the piezoelectric material near the crack tip, a process that may influence the interfacial fracture resistance.     

Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers

In this paper, we propose a specific two-layer model consisting of a functionally graded (FG) layer and a piezoelectric semiconductor (PS) layer. Based on the macroscopic theory of PS materials, the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated. The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series. Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer. In addition, by creating jump discontinuities in the material properties of the FG layer, potential barriers/wells can be produced in the middle of the fiber. Similarly, the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way, which offers a new choice for the design of PN junction based devices.

     

应用干涉云纹测量工艺应力分布

本文就冷胀孔周残余应力分布的测量技术和干涉螺接孔周干涉应力分布的测量技术进行了实验研究。沿着径向将试件切割,以释放欲测的应力,同时用干涉云纹技术测量由于释放应力而引起的附加应变场。文中还就残余应力在循环载荷作用下的松弛问题进行了实验研究。提供了典型的实验结果,讨论了引起实验误差的主要原因。     

Concentration of electric field near electrodes on piezoelectric layer

This paper aims at the study of electric field concentration near the edge of the electrodes for a piezoelectric layer. For simplicity, attention is focussed on a piezoelectric layer that is bonded to a rigid, conductive substrate and then covered by a pair of conductive electrodes on the surface. The analysis is performed within the scope of linear piezoelectricity. Fourier transform technique is applied to reduce the boundary value problem to a pair of dual integral equations. An analytical solution to the integral equations is obtained by using an iteration method. Numerical results for distributions of stresses and electric fields are displayed and discussed.     

压电材料平面问题的尖端场和应力强度因子的求解

利用Lekhnitskii理论和Stroh理论的相互联系,把已知的基于Lekhnitskii理论平面应变结果转化为Stroh理论形式的结果,直接获得Stroh公式中A,B的显式表达式,此方法可扩展到平面应力情况,然后导出压电材料平面应变问题的尖端场Williams形式的展开式,采用半权函数法计算有限大压电体平面问题应力和电位移强度因子。对无穷大板含中心裂纹的情况下本文结果和已有结果进行了比较,表明本文方法得到的结果精度可靠。本文方法的最大优点是可以求解有限压电体的应力强度因子,并且需要的单元少,精度高,实用性好。     

Periodic set of limited electrically permeable interface cracks with contact zones

Plane problem for an infinite space composed of two different piezoelectric or piezoelectric/dielectric semi-infinite spaces with a periodic set of limited electrically permeable interface cracks is considered. Uniformly distributed electromechanical loading is applied at infinity. The frictionless contact zones at the crack tips are taken into account. The problem is reduced to the combined Dirichlet–Riemann boundary value problem by means of the electromechanical factors presentation via sectionally analytic functions, assuming that the electric flux is uniformly distributed inside the cracks. An exact solution of the problem is proposed. It permits to find in a closed form all necessary electromechanical characteristics at the interface and to formulate the equation for the determination of the electric flux value. Analysis of this equation confirms the correctness of the assumption concerning the uniform distribution of the electric flux in the crack region.Formulae for stresses, electric displacement vector, elastic displacements and electric potential jump at the interface as well as the intensity factors at the crack tips are given. Equation for the contact zone length determination is presented. Calculations for certain material combinations are carried out. The influence of electric permeability of cracks on electromechanical fields and the fracture mechanical parameters is analyzed.     

The electro-elastic field of the infinite piezoelectric medium with two piezoelectric circular cylindrical inclusions

The electro-elastic field of the infinite piezoelectric medium with two piezoelectric circular cylindrical inclusions is derived under the antiplane shear stresses and inplane electric fields. The analytical solution is obtained. The proposed method is based upon the use of conformal mapping and the theorem of analytic continuation. From the results obtained, it can be found that the electro-elastic field depends on the material constants of individual phases, the geometric parameters of the system and the applied antiplane shear stresses and electric fields at infinity. In addition, the specific cases when two circular cylindrical inclusions are tangent to each other and they are holes and/or rigid ones, are also studied in this paper. The project supported by the National Natural Science Foundation of China (19872023) and the Foundation of the Ministry of Education for trans-century outstanding scholars     

磁-电-弹性半空间在轴对称热载荷作用下的三维问题研究

考虑力-电-磁-热等多场耦合作用, 基于线性理论给出了磁-电-弹性半空间在表面轴对称温度载荷作用下的热-磁-电-弹性分析, 并得到了问题的解析解. 利用Hankel 积分变换法求解了磁-电-弹性材料中的热传导及控制方程, 讨论了在磁-电-弹性半空间在边界表面上作用局部热载荷时的混合边值问题, 利用积分变换和积分方程技术, 通过在边界表面上施加应力自由及磁-电开路条件, 推导得到了磁-电-弹性半空间中位移、电势及磁势的积分形式的表达式. 获得了磁-电-弹性半空间中温度场的解析表达式并且给出了应力, 电位移和磁通量的解析解. 数值计算结果表明温度载荷对磁-电-弹性场的分布有显著影响. 当温度载荷作用的圆域半径增大时, 最大正应力发生的位置会远离半无限大体的边界; 反之当温度载荷作用的圆域半径减小时, 最大应力发生的位置会靠近半无限大体的边界. 电场和磁场在温度载荷作用的圆域内在边界表面附近有明显的强化, 而磁-电-弹性场强化区域的强化程度跟温度载荷的大小和作用区域大小相关. 本研究的相关结果对智能材料和结构在热载荷作用下的设计和制造具有指导意义.      

THREE-DIMENSIONAL ANALYSIS OF A MAGNETOELECTROELASTIC HALF-SPACE UNDER AXISYMMETRIC TEMPERATURE LOADING 1)

考虑力-电-磁-热等多场耦合作用, 基于线性理论给出了磁-电-弹性半空间在表面轴对称温度载荷作用下的热-磁-电-弹性分析, 并得到了问题的解析解. 利用Hankel 积分变换法求解了磁-电-弹性材料中的热传导及控制方程, 讨论了在磁-电-弹性半空间在边界表面上作用局部热载荷时的混合边值问题, 利用积分变换和积分方程技术, 通过在边界表面上施加应力自由及磁-电开路条件, 推导得到了磁-电-弹性半空间中位移、电势及磁势的积分形式的表达式. 获得了磁-电-弹性半空间中温度场的解析表达式并且给出了应力, 电位移和磁通量的解析解. 数值计算结果表明温度载荷对磁-电-弹性场的分布有显著影响. 当温度载荷作用的圆域半径增大时, 最大正应力发生的位置会远离半无限大体的边界; 反之当温度载荷作用的圆域半径减小时, 最大应力发生的位置会靠近半无限大体的边界. 电场和磁场在温度载荷作用的圆域内在边界表面附近有明显的强化, 而磁-电-弹性场强化区域的强化程度跟温度载荷的大小和作用区域大小相关. 本研究的相关结果对智能材料和结构在热载荷作用下的设计和制造具有指导意义.     

Mixed-mode thermal stress intensity factors from the finite element discretized symplectic method

A finite element discretized symplectic method is introduced to find the thermal stress intensity factors (TSIFs) under steady-state thermal loading by symplectic expansion. The cracked body is modeled by the conventional finite elements and divided into two regions: near and far fields. In the near field, Hamiltonian systems are established for the heat conduction and thermoelasticity problems respectively. Closed form temperature and displacement functions are expressed by symplectic eigen-solutions in polar coordinates. Combined with the analytic symplectic series and the classical finite elements for arbitrary boundary conditions, the main unknowns are no longer the nodal temperature and displacements but are the coefficients of the symplectic series after matrix transformation. The TSIFs, temperatures, displacements and stresses at the singular region are obtained simultaneously without any post-processing. A number of numerical examples as well as convergence studies are given and are found to be in good agreement with the existing solutions.     

Application of the multipole method to the problem on two close holes

We consider the plane elasticity problem on the interaction of two close identical holes under biaxial loading conditions at infinity. We study the stress state in the region of mutual interaction of the holes and near their contours. We propose a method for solving this problem on the basis of the representation of the jump displacement function as a sum of multipoles. Special attention is paid to the dependence of stress concentration on the parameters of the system of holes and its orientation with respect to the applied load. The stress fields are obtained for various locations of the holes. We also present the dependences of the maximum stress attained on the contour and the point of maximum stress concentration on the orientation of the pair of holes with respect to the external load.     

Effects of bottom shear stresses on the wave-induced dynamic response in a porous seabed：PORO-WSSI （shear） model

When ocean waves propagate over the sea floor,dynamic wave pressures and bottom shear stresses exert on the surface of seabed.The bottom shear stresses provide a horizontal loading in the wave-seabed interaction system,while dynamic wave pressures provide a vertical loading in the system.However,the bottom shear stresses have been ignored in most previous studies in the past.In this study,the effects of the bottom shear stresses on the dynamic response in a seabed of finite thickness under wave loading will be examined,based on Biot’s dynamic poro-elastic theory.In the model,an "u-p" approximation will be adopted instead of quasi-static model that have been used in most previous studies.Numerical results indicate that the bottom shear stresses has certain influences on the wave-induced seabed dynamic response.Furthermore,wave and soil characteristics have considerable influences on the relative difference of seabed response between the previous model(without shear stresses) and the present model(with shear stresses).As shown in the parametric study,the relative differences between two models could up to 10% of p0,depending on the amplitude of bottom shear stresses.     

A new analytical-numerical method for calculating interacting stresses of a multi-hole problem under both remote and arbitrary surface stresses

Based on the elementary solutions and new integral equations, a new analytical-numerical method is proposed to calculate the interacting stresses of multiple circular holes in an infinite elastic plate under both remote stresses and arbitrarily distributed stresses applied to the circular boundaries. The validity of this new analytical-numerical method is verified by the analytical solution of the bi-harmonic stress function method, the numerical solution of the finite element method, and the analytical-numerical solutions of the series expansion and Laurent series methods. Some numerical examples are presented to investigate the effects of the hole geometry parameters (radii and relative positions) and loading conditions (remote stresses and surface stresses) on the interacting tangential stresses and interacting stress concentration factors (SCFs). The results show that whether the interference effect is shielding (k <1) or amplifying (k> 1) depends on the relative orientation of holes (α) and remote stresses (σ_x^∞, σ_y^∞). When the maximum principal stress is aligned with the connecting line of two-hole centers and σ_y^∞ <0.5σ_x^∞, the plate containing two circular holes has greater stability than that containing one circular hole, and the smaller circular hole has greater stability than the bigger one. This new method not only has a simple formulation and high accuracy, but also has an advantage of wide applications over common analytical methods and analytical-numerical methods in calculating the interacting stresses of a multi-hole problem under both remote and arbitrary surface stresses.     

Penny-shaped crack in transversely isotropic piezoelectric materials

Using a method of potential functions introduced successively to integrate the field equations of three-dimensional problems for transversely isotropic piezoelectric materials, we obtain the so-called general solution in which the displacement components and electric potential functions are represented by a singular function satisfying some special partial differential equations of 6th order. In order to analyse the mechanical-electric coupling behaviour of penny-shaped crack for above materials, another form of the general solution is obtained under cylindrical coordinate system by introducing three quasi-harmonic functions into the general equations obtained above. It is shown that both the two forms of the general solutions are complete. Furthermore, the mechanical-electric coupling behaviour of penny-shaped crack in transversely isotropic piezoelectric media is analysed under axisymmetric tensile loading case, and the crack-tip stress field and electric displacement field are obtained. The results show that the stress and the electric displacement components near the crack tip have (r ^−1/2) singularity. The project supported by the Natural Science Foundation of Shaanxi Province, China     

Residual Stresses Induced by Cold Expansion of Adjacent and Cut-Out Holes

Fatigue life of fastener holes can be enhanced via a cold-expansion process to introduce a compressive residual stress field around the hole edge and to reduce crack growth propagation. Considering that aerospace components contain multiple rows of holes, the present investigation focuses on the evaluation of the three-dimensional residual stress distribution in adjacent cold-expanded (CE) holes. The redistribution of residual stresses caused by a cut introduced between two adjacent holes was also investigated. Finite element (FE) analysis and experimental technique were used to assess the residual stress distribution in a 6082-T6 aluminum plate with two adjacent holes expanded sequentially at 4 % nominal interference. The influence of center-to-center distance between holes was explored to assess the optimal level of separation between adjacent holes. Results suggested that residual stresses near second CE hole are markedly lower than those of first CE hole and that a cutting process does not affect the beneficial compressive residual stress around CE holes. These effects may delay fatigue crack propagation from CE holes or cut-out holes.     

Interaction between bending and mobile charges in a piezoelectric semiconductor bimorph

We study the bending of a two-layer piezoelectric semiconductor plate (bimorph). The macroscopic theory of piezoelectric semiconductors is employed. A set of two-dimensional plate equations is derived from the three-dimensional equations. The plate equations exhibit direct couplings among bending, electric polarization along the plate thickness, and mobile charges. In the case of pure bending, a combination of physical and geometric parameters is identified which characterizes the strength of the interaction between the mechanical load and the distribution of mobile charges. In the bending of a rectangular plate under a distributed transverse mechanical load, it is shown that mobile charge distributions and potential barriers/wells develop in the plate. When the mechanical load is local and self-balanced, the induced carrier distributions and potential barriers/wells are also localized near the loading area. The results are fundamentally useful for mechanically manipulating mobile charges in piezoelectric semiconductor devices.     

On the singularities of the thermo-electro-elastic fields near the apex of a piezoelectric bonded wedge

Based on the generalized Lekhnitskii formulation and Mellin transform, the thermo-electro-elastic fields of a piezoelectric bonded wedge are investigated in this paper. From the potential theory in a wedge-shaped region, a general form of the temperature change is proposed as a particular solution in the generalized Lekhnitskii formulation. The emphasis is on the singular behavior near the apex of the piezoelectric bonded wedge, including singularity orders and angular functions, which can be computed numerically. The interface between two materials can be either perfectly bonded, namely type A, so that the continuity of electric displacements holds, or a thin electrode, namely type B, so that the electric potential is grounded. Case studies of PZT-5H/PZT-4 and graphite-epoxy/PZT-4 bonded wedges reveal that, in most cases, the type B continuity condition has more severe singularities than type A due to the mixed boundary point of the electrostatics at the apex of the wedge. The results of this study show that the reduction or disappearance of singularity orders is possible through the appropriate selection of poling/fiber orientations and wedge angles.