Nonlinear Temperature Dependence of Magnetization of Two-Band Superconductors Near Upper Critical Field

Temperature dependence of the magnetization M （T） of two-band superconductors is studied in the vicinity of upper critical field He2 by using a two-band Ginzburg-Landau （GL） theory. It is shown that magnetization M（T） has a nonlinear character due to positive curvature of upper critical field Hc2（T） and temperature dependence of effective Ginzburg-Landau parameter Neff（T）. The results are shown to be in qualitative agreement with experimental data for the superconducting magnesium diboride, MgB2.     

Pair-Breaking Critical Current Density of Two-Band Superconductor MgB2

Temperature dependence of tbe pair-breaking critical current density of MgB2, jd（T）, is studied using a two-band Ginzburg-Landau theory. The results are shown to be in good agreement with experimental data for the superconducting magnesium diboride MgB2.     

Fluctuating specific heat in two-band superconductors

Theory of thermal fluctuations in two-band superconductors under an essentially homogeneous magnetic field is developed within the framework of the two-band Ginzburg-Landau theory. The fluctuating specific heat is calculated by using the optimized self-consistent perturbation approach and the results are applied to analyze the thermodynamic data of the iron-based superconductors Ba_(1-x)K_xFe_2As_2 with x ~0.4, which have been suggested to have a two-band structure by recent experiments. We estimate the fluctuation strength in this material and find that the specific heat is described well with the Ginzburg number Gi = 4 · 10~(-4). The influence of interband coupling strength is investigated and the result of the two-band Gaussian approximation approach is compared.     

A MOVING SCREW DISLOCATION IN A ONE-DIMENSIONAL HEXAGONAL QUASICRYSTAL

This paper extends a moving screw dislocation theory in a conventional crystal to a one-dimensional hexagonal quasicrystal in the framework of the Landau theory. By introducing two functions φ and ψ which satisfy wave equations, respectively, a general solution is suggested in terms of φ and ψ. The analytical expressions for displacement and stress fields induced by a moving screw dislocation as well as the energy are found. The results obtained here when imposing the condition that the phason fields is absent reduce to those for a moving screw dislocation in a crystal.     

Local resonant characteristics of a layered cylinder embedded in the elastic medium

Three kinds of resonant modes of a single layered circular elastic cylinder embedded in the elastic medium are analysed by considering the oscillation of the scatter＇s core, based on the fact that the core moves as a rigid body when the shell material is very compliant. The resonant frequencies of the single resonator acquired by our method are in good agreement with those calculated by the local interaction simulation approach （LISA） for the local resonant phononic crystal. Therefore, the local resonant characteristics of a single layered circular elastic cylinder can be used to evaluate the resonant frequencies of the phononic crystal. The effects of the geometrical and physical parameters of the shell and the core are also studied in details. This work is significant for designing the locally resonant phononic crystal based on the local resonant characteristics of the single resonator, and the resonant frequencies can be tuned by selecting the geometrical sizes and the materials.     

Crystal-Orientation Dependent Evolution of Edge Dislocations from a Void in Single Crystal Cu

The micro-void growth by dislocation emission under tensile loading is explored with focus on the influence of crystal orientations. Based on the elastic theory, a dislocation emission criterion is formulated. It is predicted that the preferential location of dislocation nucleation and its threshold stress are dependent on the crystal orientation. Large-scale molecular dynamics （MD） simulations are also performed for single crystal copper to illustrate the dislocation evolution pattern associated with a nano-void growth. The results are in line with those given by the theoretical prediction. As revealed by MD simulations, the characteristics of void growth at micro-scale depend greatly on the crystal-orientation.     

Towards a Mechanism Underlying the Stability of the Tetragonal CuO Phase： Comparison with NiO and CoO by Hybrid Density Functional Calculation

By means of hybrid density functional theory, we interpret the stability mechanism of the tetragonal CuO phase, which was synthesized using the pulsed laser deposition. The orbital ordering resulted from the crystal field splitting is found to be favorable for the do electronic configuration of the Cu2＋ ion, yielding two possible metastable tetragonal phases （c/a 〈 1 and c/a 〉 1） of CuO. A detailed comparison is also performed with the ideal rock-salt compounds CoO and NiO.     

Fabrication of Two-Dimensional Arrays of Micron-Sized Gold Rings Based on Preferential Nucleation at Reentrant Sites

A templating method for fabricating two-dimensional （2D） arrays of micron-sized goM rings is reported. The microstructures are formed by electroless plating in a through-porous polymer membrane on a silicon substrate obtained from a closed-packed silica colloidal crystal. Our results show that the sizes of gold rings can be altered by varying electroless plating conditions for the porous polystyrene membranes. Moreover, we explain the growth mechanism of gold rings using the classical crystal growth theory that is preferential nucleation at reentrant sites.     

Microwave Response of MgB2/A12O3 Superconducting Thin Films by Microstrip Resonator Technique

Double-sided superconducting MgB2 thin films are deposited onto c-A120a substrates by the hybrid physical chemical vapour deposition method. The microwave response of MgB2/A12O3 is investigated by microstrip resonator technique. A grain-size model is introduced to the theory of microstrip resonators to analyse microwave properties of the films. We obtain effective penetration depth of the films at OK （λe0 = 463nm） and surface resistance （R8 = 1.52 mΩ at 11 K and 8. 73 GHz） by analysing the resonant frequency and unload quality factor of the microstrip resonator, which suggests that the impurities and disorders of grain boundaries of MgB2/A12 Oa result in increasing penetration depth and surface resistance of the films.     

Hole arrayed metal-insulator-metal structure for surface enhanced Raman scattering by self-assembling polystyrene spheres

A fabrication process based on the self-assembling polystyrene spheres is proposed to obtain hole arrayed metal-insulator-metal （HA-MIM） structure for surface enhanced Raman scattering （SERS）. The localized field enhancement aroused by the gap resonance in the HA-MIM structure is analyzed by finite-different time domain （FDTD） method. With reference to the theory result, the structure is experimentally fabricated and the Raman scattering spectrum of rhodamine 6G （R6G） is measured by a miniaturized Raman spectrometer. The results shows that the enhancement factor is 3.85 times higher than the control sample with single layered metal hole array. The fabrication process to obtain the HA-MIM SERS substrate is reproducible, fast, large area and low cost.     

超导材料NbS2上临界磁场的理论分析

根据两带Ginzburg-Landau 理论计算了层状超导材料NbS₂的上临界磁场, 以及上临界磁场各向异性参数随温度的变化情况, 并将NbS₂与MgB₂, NbSe₂上临界磁场的各向异性进行比较. 所得计算结果与已有实验数据符合得很好, 充分说明了NbS₂的超导电性具有两能隙特征. NbS₂上临界磁场各向异性参数在5.0 K附近逐渐变小, 这与MgB₂和NbSe₂有相似之处. 但NbS₂的上临界磁场各向异性参数大约为7.3, 明显大于MgB₂和NbSe₂. 计算结果还表明, NbS₂较大能隙所对应能带的有效质量比约为54, 另一能带的有效质量基本为各向同性.     

Fluctuation conductivity in superconducting MgB2

According to the crystal structure of MgB₂ and band structure calculations, quasi-two-dimensional (2D) boron planes are responsible for the superconductivity. We report on critical-field and resistance measurements of 5.6-μm-thick MgB₂ films grown on a sapphire single-crystal substrate. Resistivity measurements yield a temperature dependence of the fluctuation conductivity above the critical temperature, which agrees with the Aslamazov-Larkin and Maki-Thompson theory of fluctuations in layered superconductors, indicating a quasi-two-dimensional nucleation of superconductivity in MgB₂.     

Temperature dependence of transmittance and effective surface resistance of MgB2 film

Using the Kubo formula approach and Green's function method, the temperature dependence of the transmittance and effective surface resistance of high quality MgB₂ film are calculated in the framework of the two-band model. For large interval of temperatures below T_C our results are in agreement with experimental data. We show a single-gap model based on BCS theory, which is insufficient to understand such quantities, but a two-band model with different symmetries can describes the experimental data rather well. In the two-gap model we consider that the transmittance and effective surface resistance are a weighted sum of the contributions from σ and π bonds and hybridization between them is negligible.     

Anisotropy of the upper critical field in MgB<Subscript>2</Subscript>: The two-band Ginzburg-Landau theory

The temperature dependence of the anisotropy parameter of the upper critical field \(\gamma _{H_{c2} } (T) = H_{c2}^\parallel (T)/H_{c2}^ \bot (T)\) is calculated using the two-band Ginzburg-Landau theory for layered superconductors. It is shown that the anisotropy parameter γ(T) increases with decreasing temperature. The results of the calculations are in agreement with experimental data for single crystals of MgB₂ and with other calculations.     

WEAK QUANTUM FLUX CREEP AND STRONG PINNING IN THE NEW SUPERCONDUCTOR MgB2

The newly discovered superconductor MgB₂ has a transition temperature T_c of about 40 K, which is touching the upper line of that predicted by the phonon-mediated Bardeen--Cooper--Schrieffer (BCS) theory. It is interesting to investigate the flux creep in MgB₂ and compare it with other superconductors. We have measured the magnetization relaxation of MgB₂ sintered at high temperature and high pressure. It is found that the quantum tunnelling and the thermally activated flux creep are very weak, implying a strong pinning in this material.     

Influence of shock-wave pressure up to 65 GPa on the crystal structure and superconducting properties of MgB2

The influence of shock-wave pressure treatment up to 65 GPa on the crystal structure and the superconducting transition temperature of a polycrystalline MgB₂ sample has been investigated. X-ray diffraction measurements have revealed that the shock-wave pressure does not result in any irreversible structural phase transitions in the MgB₂, except for microdistortions formed in the crystal structure of the shock-wave pressure-treated MgB₂ sample. This conclusion is in agreement with the results of superconducting transition temperature measurements of a MgB₂ sample performed before and after its shock-wave pressure treatment.     

Critical temperature of two-band superconductors in intermediate e-ph coupling: The case of MgB2

Critical temperature of two-band superconductors is studied using Eliashberg theory in approach of intermediate e-ph coupling. The results are shown to be in qualitative agreement with experimental data for the superconducting magnesium diboride, MgB₂.     

Excess current in point contacts on two-band superconductor MgB2 in magnetic field

A series of I(V) characteristics and bias-dependent differential resistance dV/dI(V) curves of point contacts made between a single crystal of two-band superconductor MgB₂ and Cu were measured in magnetic fields up to 9 T. The magnetic field dependences of the excess current in the I(V) curves were obtained and analyzed using Koshelev and Golubov's [Phys. Rev. Lett. 90, 177002 (2003)] theoretical results for the mixed state of a dirty two-band superconductor. Introducing a simple model for the excess current in the point contact in the mixed state, our data can be qualitatively described using the theoretical magnetic field dependence of the superconducting order parameter of the σ and π-bands and the averaged electronic density of states in MgB₂.     

利用电泳法在金属基底上制备MgB2超导厚膜

利用电泳技术在高熔点金属基底Ta，Mo和W上制备MgB₂超导厚膜.厚膜中的MgB2晶粒结合紧密，粒度小于1μm，呈随机取向生长.电阻测量表明沉积在Ta，Mo，W上的MgB₂厚膜的超导起始转变温度分别为36.5K，34.8K，33.4K，对应的转变宽度为0.3K，1.5K和2.0K.三种基底上制备的MgB₂厚膜的临界电流密度在不同温度下随外磁场的变化情况 基本相同，MgB₂/Mo厚膜的临界电流密 关键词： 2超导厚膜')" href="#">MgB₂超导厚膜 电泳 金属基底     

Effective action approach to the Leggett's mode in two-band superconductors

We investigate a collective excitation (Leggett's mode) corresponding to small fluctuations of the relative phase of two condensates in two-band superconductor using the effective “phase only” action. We consider the possibility of observing Leggett's mode in MgB₂ superconductor and conclude that for the known at present values of the two-band model parameters for MgB₂ Leggett's mode arises above the two-particle threshold. Received 10 May 2002 Published online 19 November 2002