组合倍率极紫外光刻物镜系统梯度膜设计方法

随着极紫外(EUV)光刻物镜的设计朝着组合倍率物镜系统的方向发展,物镜系统需要同时具有大视场和高数值孔径(NA),因而产生了物镜的光线入射角及入射角范围急剧增大的问题,需要研究适用于组合倍率极紫外光刻物镜系统的膜层设计的新方法。提出了渐进优化膜层的设计方法,该方法提高了镀制膜层的物镜系统的反射率,保证了组合倍率物镜系统的成像质量。利用该方法对NA为0.6的组合倍率物镜系统进行了膜层设计,设计结果表明,含膜极紫外光刻物镜系统的平均反射率大于65%,各反射镜的反射率峰谷值均小于3.35%,反射率均匀性良好。     

超高数值孔径Schwarzschild投影光刻物镜的光学设计

针对45nm及以下节点光刻相关技术的研究需求,确定了实验型投影光刻物镜的结构型式及设计指标。依据像差理论在非同心小遮拦的Schwarzschild反射系统中添加折射补偿镜组来进一步减小系统的中心遮拦,扩大像方数值孔径。设计了一套小中心遮拦,数值孔径为1.20的Schwarzschild折反式投影光刻物镜。设计结果表明,该投影光刻物镜工作带宽为100pm,像方视场为50μm,线中心遮拦比为13%,光学分辨力为80nm时(6240lp/mm)的系统调制传递函数大于0.45,全视场最大畸变为6.5nm,满足了45nm深紫外(DUV)浸没光刻实验平台对投影光刻物镜的需求。     

0.7微米i线投影曝光系统光刻物镜的设计与试制

介绍了微电子专用关键设备０．７μｍｉ线投影曝光系统光刻物镜的主要技术指标，及设计试制中解决的关键单元技术和试制结果。结果表明，数值孔径ＮＡ＝０．４２，光刻工作分辨力０．６μｍ，像场尺寸１４．６ｍｍ×１４．６ｍｍ，畸变＜±０．１μｍ的５倍精缩投影光刻物镜已试制成功。物镜具有双远心和有温度气压控制补偿，在满足高精度成像的同时，又能同时满足暗场同轴对准的特点。     

组合倍率极紫外光刻物镜梯度膜设计

10nm以下光刻技术牵引极紫外(EUV)光刻物镜向超高数值孔径(NA)、组合倍率设计形式发展,物镜系统的入射角和入射角范围因此急剧增大,传统规整膜和横向梯度膜难以满足该类物镜系统反射率及像质要求。为此,提出了横纵梯度膜组合法,用横向梯度膜提高反射率,用纵向梯度膜提高反射率均匀性,并补偿横向梯度膜引入的像差。应用该方法对一套NA为0.50的组合倍率EUV光刻物镜进行膜层设计,设计结果表明,在保证系统成像性能不变的情况下,平均每面反射镜的反射率大于60%,各反射镜的反射峰谷值均小于3.5%,满足光刻要求,验证了横纵梯度膜组合法的可行性。     

组合倍率极紫外光刻物镜梯度膜设计EI北大核心CSCD

10nm以下光刻技术牵引极紫外(EUV)光刻物镜向超高数值孔径(NA)、组合倍率设计形式发展,物镜系统的入射角和入射角范围因此急剧增大,传统规整膜和横向梯度膜难以满足该类物镜系统反射率及像质要求。为此,提出了横纵梯度膜组合法,用横向梯度膜提高反射率,用纵向梯度膜提高反射率均匀性,并补偿横向梯度膜引入的像差。应用该方法对一套NA为0.50的组合倍率EUV光刻物镜进行膜层设计,设计结果表明,在保证系统成像性能不变的情况下,平均每面反射镜的反射率大于60%,各反射镜的反射峰谷值均小于3.5%,满足光刻要求,验证了横纵梯度膜组合法的可行性。     

数字灰度光刻成像物镜设计

为了研究数字灰度光刻成像系统中栅格效应对像质的影响.在成像系统优化参量已有的研究基础上,综合考虑工作效率、光刻准确度、加工制造成本等因素,设计了一种能够有效消除数字灰度光刻成像栅格效应的光刻物镜.此光刻物镜技术指标为,数值孔径NA＝0.3,工作波长λ＝442 nm,倍率10×,分辨率R≤1.2 μm,焦深4 μm,且镜片数量少,光学加工、光学校装公差要求低.结果表明,该镜头完全满足数字灰度光刻高质量成像的需要.     

亚微米(i线和g线)投影光刻物镜的光学装校

本文列出了ｉ线和ｇ线大数值孔径亚微米投影光刻物镜的技术指标要求，讨论了这类超高精度光刻物镜的光学装校技术特点，报告了计算机辅助高精度复杂光学系统偏心校正仪器和方法，最后给出了ｉ线和ｇ线光刻物镜装校检测结果。     

投影光刻物镜的计算机辅助装调

针对投影光刻物镜苛刻的像质要求,将计算机辅助装调(CAA)技术引入投影光刻物镜的装调过程中,建立了相应的数学模型。选取33个视场Fringe Zernike多项式的4~37项,以及畸变作为校正对象,并选取19个结构参量作为补偿器。通过将CODE V的宏功能和Matlab结合,采集灵敏度矩阵和像质数据。提出用奇异值分解求加权最小二乘解的方法计算补偿量,通过权重因子实现对不同视场上不同Zernike项系数或畸变的改进。将补偿后光刻物镜的性能和理想光刻物镜对比,发现相比于设计镜头,装调后镜头的平均波前均方根(RMS)大约差0.004λ,平均畸变大约差1nm,该方法可以将系统波像差和畸变恢复到接近设计水平。     

极紫外投影光刻原理装置的集成研究

论述了光刻技术发展的历程，趋势和极紫外投影光刻技术的特性，并介绍了极紫外投影光刻原理装置的研制工作，该装置由激光等离子体光源,掠入射椭球聚光镜，透射掩模，施瓦茨微缩投影物镜及相应的真空系统组成，其工作波长为13nm，在直径为0．1mm的像方视场内设计分辨率优于0．1um。     

大数值孔径产业化极紫外投影光刻物镜设计

极紫外光刻技术(EUVL)是半导体制造实现22 nm及以下节点的下一代光刻技术,高分辨投影物镜的设计是实现高分辨光刻的关键技术.为设计满足22 nm产业化光刻机需求的极紫外光刻投影物镜,采用6枚高次非球面反射镜,像方数值孔径达到0.3,像方视场宽度达到1.5 mm.整个曝光视场内的平均波像差均方根值(RMS)为0.02...     

Conventional and modified Schwarzschild objective for EUV lithography: design relations

The design criteria of a Schwarzschild-type optical system are reviewed in relation to its use as an imaging system in an extreme ultraviolet lithography setup. Both the conventional and the modified reductor imaging configurations are considered, and the respective performances, as far as the geometrical resolution in the image plane is concerned, are compared. In this connection, a formal relation defining the modified configuration is elaborated, refining a rather naïve definition presented in an earlier work. The dependence of the geometrical resolution on the image-space numerical aperture for a given magnification is investigated in detail for both configurations. So, the advantages of the modified configuration with respect to the conventional one are clearly evidenced. The results of a semi-analytical procedure are compared with those obtained from a numerical simulation performed by an optical design program. The Schwarzschild objective based system under implementation at the ENEA Frascati Center within the context of the Italian FIRB project for EUV lithography has been used as a model. Best-fit functions accounting for the behaviour of the system parameters vs. the numerical aperture are reported; they can be a useful guide for the design of Schwarzschild objective type optical systems.     

Experience in the Development of a Configurable Laboratory UV Projection Photolithography System of Micron Resolution

The possibility of creating a laboratory UV photolithography setup with the help of commercially available components, such as optical-mechanical positioners and UV (ultraviolet) objective lenses, is discussed. Existing technical solutions concerning the optical systems of optical lithography, which rely on object?image reduction, are considered. The main trends in the design of such systems based on lens optics are analyzed. The theoretical and practical aspects underlying the design of similar systems are examined taking into account the basic conditions of image obtainment: congruence to the initial object, ray-path telecentricity, and achievement of the required parameters by linear fields and resolution.     

超大规模集成电路光学光刻技术的现状与展望

光学光刻是目前超大规模集成电路(VLSI)制备中主要的微米和亚微米的图形加工技术,这一技术将继续保持其主导地位成为90年代VLSI发展的关键。本文综述了近年来光学光刻工艺的发展,主要介绍了G线(436nm)、Ⅰ线(365nm)和准分子激光光刻的现状,并对实现高的光学光刻分辨率所必须解决的透镜设计、套准精度和像场面积等问题作了详细描述。最后展望了发展方向、     

宽带折反射式紫外光刻物镜的设计

本文设计了一种新系列的紫外或远紫外激光光刻物镜,它与国内外已有的紫外物镜相比,在365nm以下的光谱区,具有更宽的光谱工作带宽和较高的数值孔径.以宽带准分子激光或短弧汞氙灯做光源,无需另加色散补偿光学元件,可以进行同轴对准.     

Blue laser lithography for making antireflective submicron structures on silicon

The application of blue laser lithography for creating antireflective submicron structures on a crystalline silicon substrate was evaluated. The assembled blue laser lithography system was obtained by modifying a commercial blue laser optical pickup head and consisting of a 405-nm-wavelength blue laser and a 0.85-numerical-aperture objective lens. Si substrates were patterned with submicron column patterns of various periods and aspect ratios by blue laser lithography using a sputtered Ge-Sb-Sn-O layer as a resist. The reflectance of the patterned Si substrate decreased to 3% on average in the 300–1000 nm wavelength range, with a low sensitivity to the angle of incident light. Such patterned substrates showed potential for application in crystalline Si solar cells.     

Design and application of phase photon sieve

The imaging principle of Fresnel zone plate and photon sieve were analyzed in this paper. The design and fabrication of phase photon sieve were discussed. The feasibility of using phase photon sieve to realize nano-lithography was analyzed, a novel lithography experiment system based on phase photon sieve was presented, which not only has higher resolution and image contrast than the Fresnel zone plate lithography but also have higher diffractive efficiency than the amplitude photon sieve lithography.     

光刻物镜中透镜高精度支撑结构的设计及分析

光刻投影物镜中透镜的面形精度是影响光学系统成像质量的关键因素之一。为实现透镜面形精度均方根(RMS)值优于2nm的高精度指标,提出一种轴向多点挠性支撑、径向三点可调式定位的光学透镜支撑结构。基于自重变形对支撑结构进行优化设计,深入分析在此支撑结构下自重和热载荷对透镜面形影响。结果表明,重力引起的透镜上表面面形RMS值为0.186nm,下表面面形RMS值为0.15nm。热载荷引起的上表面面形RMS值为0.55nm,下表面面形RMS值为0.54nm。采用这种透镜的支撑结构,能够满足光刻投影物镜中透镜的高精度面形要求。     

用于数字光刻的非对称式投影物镜设计

针对DMD数字光刻,利用ZEMAX光学设计软件,设计出了一套适用于型号 0.7XGA DMD的10片式光刻投影物镜。该物镜采用非对称性结构,前组为改进的三分离物镜,后组为匹兹伐物镜加平像场镜,分辨率为2 m,近轴放大倍率为-0.15,像方数值孔径NA为0.158,全视场波像差小于/20 ,畸变小于0.014%,焦深为20 m,通过各项评价可知系统已经达到了衍射极限。在对该镜头进行公差分析后,利用Monte Carlo方法,模拟组装加工了100组镜头,得到90%的镜头MTF＞0.46,50%的镜头MTF＞0.51,证明了这种非对称性结构加工和校装的可能性。     

Enlarging lens design with f-Θ lens for real time laser lithography inspections

An enlarging lens, composed of a charge-coupled-device (CCD) lens and an f-Θ lens, has been designed for real time laser lithography visual inspection purposes. The object of this design is to enlarge the image of the working specimens in real time, which used to be done by an independent magnifying system after the lithography process. F-Θ lens has both roles in this design, being a laser lithography lens and a specimen imaging lens. A beam splitter has been inserted between the f-Θ lens and the CCD lens, which divides the UV laser beam and the visible beam to form a coaxial system. This design also reaches the image requirements in both wavelength bands, that the value of MTF is nearly diffraction-limit in UV wavelength and greater than 0.45 at 40 c/mm in visible wavelength.