Glass transition and dynamics of single and stacked thin films of poly(2-chlorostyrene)

The glass transition temperature and the dynamics of the α-process have been investigated using dielectric relaxation spectroscopy for single and stacked thin films of poly(2-chlorostyrene) (P2CS). The stacked film consists of 10 layers of single thin films with thickness of 12 nm or 18 nm. The glass transition temperature T _g of the single thin films of P2CS is found to decrease with decreasing film thickness in a similar way as observed for polystyrene thin films. The magnitude of the depression of T _g for the stacked thin films is larger than that of the single thin films with corresponding thickness. The depression of the temperature at which the dielectric loss shows a peak due to the α-process at a given frequency, T _α, is larger than that of the single thin films, although the magnitude is smaller than that of T _g . Annealing at a high temperature could cause the T _g and T _α of the stacked thin films to approach the values of the bulk system.     

Confinement and processing effects on glass transition temperature and physical aging in ultrathin polymer films: Novel fluorescence measurements

Fluorescence intensity measurements of chromophore-doped or -labeled polymers have been used for the first time to determine the effects of decreasing film thickness on glass transition temperature, T _g, the relative strength of the glass transition, and the relative rate of physical aging below T _g in supported, ultrathin polymer films. The temperature dependence of fluorescence intensity measured in the glassy state of thin and ultrathin films of pyrene-doped polystyrene (PS), poly(isobutyl methacrylate) (PiBMA), and poly(2-vinylpyridine) (P2VP) differs from that in the rubbery state with a transition at T _g. Positive deviations from bulk T _g are observed in ultrathin PiBMA and P2VP films on silica substrates while substantial negative deviations from bulk T _g are observed in ultrathin PS films on silica substrates. The relative difference in the temperature dependences of fluorescence intensity in the rubbery and glassy states is usually reduced with decreasing film thickness, indicating that the strength of the glass transition is reduced in thinner films. The temperature dependence of fluorescence intensity also provides useful information on effects of processing history as well as on the degree of polymer-substrate interaction. In addition, when used as a polymer label, a mobility-sensitive rotor chromophore is demonstrated to be useful in measuring relative rates of physical aging in films as thin as 10 nm. Received 21 August 2001     

Formation of textured Ni(200) and Ni(111) films by magnetron sputtering

The effect of the working gas pressure (P ≈ 1.33–0.09 Pa) and the substrate temperature (T_s ≈ 77–550 K) on the texture and the microstructure of nickel films deposited by magnetron sputtering onto SiO₂/Si substrates is studied. Ni(200) films with a transition type of microstructure are shown to form at growth parameters P ≈ 0.13–0.09 Pa and T_s ≈ 300–550 K, which ensure a high migration ability of nickel adatoms on a substrate. This transition type is characterized by a change of the film structure from quasi-homogeneous to quasi-columnar when a film reaches a critical thickness. Ni(111) films with a columnar microstructure and high porosity form at a low migration ability, which takes place at P ≈ 1.33–0.3 Pa or upon cooling a substrate to T_s ≈ 77 K.     

The suppression of structural phase transformation in LaVO3 and La1−xSrxVO3 thin films fabricated by pulsed laser deposition

Highly oriented (100) thin films of LaVO₃ and La_1−xSr_xVO₃ have been fabricated by pulsed laser deposition in a reducing atmosphere. The films show a transition from insulating to metallic behaviour in the composition region of x, 0.175<x<0.200. In the single crystals of the antiferromagnetic insulating phase, a first-order structural phase transition is observed few degrees below the magnetic transition, which manifests itself as a kink in the temperature dependence of resistivity. In the highly oriented thin films of LaVO₃ and La_1−xSr_xVO₃ fabricated on lattice matched substrates in this study, the structural phase transformation in the insulating phase has been suppressed. The electrical conduction is found to take place via hopping through localized states at low temperatures. The metallic compositions show a non-linear (T^1.5) behaviour in the temperature dependence of resistivity. V (2p) core level spectra of these films show a gradual change in the relative intensities of V³⁺ and V⁴⁺ ions as the value of x increases.     

Molecular dynamics in thin films of isotactic poly(methyl methacrylate)

The molecular dynamics in thin films (18 nm-137 nm) of isotactic poly(methyl methacrylate) (i-PMMA) of two molecular weights embedded between aluminium electrodes are measured by means of dielectric spectroscopy in the frequency range from 50 mHz to 10 MHz at temperatures between 273 K and 392 K. The observed dynamics is characterized by two relaxation processes: the dynamic glass transition (α-relaxation) and a (local) secondary β-relaxation. While the latter does not depend on the dimensions of the sample, the dynamic glass transition becomes faster (≤2 decades) with decreasing film thickness. This results in a shift of the glass transition temperature T _g to lower values compared to the bulk. With decreasing film thickness a broadening of the relaxation time distribution and a decrease of the dielectric strength is observed for the α-relaxation. This enables to deduce a model based on immobilized boundary layers and on a region displaying a dynamics faster than in the bulk. Additionally, T _g was determined by temperature-dependent ellipsometric measurements of the thickness of films prepared on silica. These measurements yield a gradual increase of T _g with decreasing film thickness. The findings concerning the different thickness dependences of T _g are explained by changes of the interaction between the polymer and the substrates. A quantitative analysis of the T _g shifts incorporates recently developed models to describe the glass transition in thin polymer films. Received 12 August 2001 and Received in final form 16 November 2001     

Half Ca-doped LaMnO3 films on (0 0 1) SLAO and STO substrate studied by magnetization and transport measurements

In this study, La_0.5Ca_0.5MnO₃ (LCMO) films, at the boundary between ferromagnetic metallic and charge-ordered antiferromagnetic insulator according to the bulk phase diagram, were epitaxially grown on (0 0 1) SrTiO₃ (STO) and SrLaAlO₄ (SLAO) substrates by pulsed laser deposition technique. The films were analyzed by X-ray diffraction, magnetization and magnetoresistance measurements. A considerably higher magnetization was measured for 290-nm-thick film on SLAO substrate compared to the film on STO substrate, although both films have the same chemical composition, thickness and epitaxial orientation. The film on SLAO shows a metal-insulator (MI) transition, which occurs at higher temperatures with increasing applied magnetic field, whereas only insulating behavior was observed for the 290-nm-thick film on STO except for the highest applied magnetic field (7 T). In addition, transport measurements were performed and analyzed by Mott's variable range hopping (VRH) model to correlate the resistivity of the films with the Jahn-Teller strain (ε_J−T) in the structure.     

Thickness dependence of superconductivity for In/Mo thin films

We report on the superconducting characteristics of the Indium thin films on molybdenum under-layer as a function of the In film thickness. Our molybdenum under-layer with thickness of 50 Å does not cause the occurrence of superconductivity until 1.5 K and the sheet resistance has logarithmic temperature dependence observed in the present investigation. As thickness of In increased, the oscillation phenomenon of T_C was observed at early stage of deposition and the value of T_C is higher than the that for bulk of In. Furthermore, it is found that with increase of the In thickness, there are large differences of the strengths of the upper critical magnetic field H_C2(T), resistivity and T_C between films with thickness below and above 100 Å. On the other hand, the T_C decreases monotonously as sheet resistance increases, when the T_C is plotted against sheet resistance. To clarify the relation of superconducting characteristics and the surface structure of the films with different thickness, we have performed surface observation by atomic force microscope. As a result, we have found that the surface changes from homogeneous structure to inhomogeneous (or percolative) structure, when the thickness of in films pass through about 100 Å. Superconductivity of In/Mo films with relatively thick-inhomogeneous films cannot be explained in terms of the simple percolation theory. Therefore, we analysis the experimental data of H_C2(T) near T_C, using a extended Landau–Ginzburg model. It is found out that our In/Mo films must consider some factors; such as, grain size, the distance of grain space, and the strength of couplings between grains.     

Qualitative discrepancy between different measures of dynamics in thin polymer films<Superscript>⋆</Superscript>

We have used ellipsometry to measure the initial stages of interface healing in bilayer polystyrene films. We also used ellipsometry to measure the glass transition temperature T_g of the same or identically prepared samples. The results indicate that as the film thickness is decreased, the time constant for the interface healing process increases, while at the same time the measured glass transition temperature in the same samples decreases as the film thickness is decreased. This qualitative difference in the behavior indicates that it is not always possible to make inferences about one probe of polymer dynamics from measurements of another. We propose a reason for this discrepancy based on a previously discussed origin for reduction in the T_g value of thin films.     

Magnetic, electrical, and crystallographic properties of thin La1−x SrxMnO3 films

A study is reported of the magnetic, electrical, and crystallographic properties of La_1−x Sr_xMnO₃ (0.15⩽x⩽0.23) epitaxial films grown on single-crystal substrates of (001)ZrO₂(Y₂O₃) having the fluorite structure and (001)LaAlO₃ having the perovskite structure. It was found that films with close compositions for x=0.15 and 0.16, grown on different substrates, have different properties, namely, the film on a fluorite substrate is semiconducting and has a coercive strength 30 times that of the film on a perovskite substrate; the temperature dependence of electrical resistance of the latter film has a maximum around the Curie point T _C and follows metallic behavior for T<T _C. These differences are explained as due to different structures of the films. The x=0.23 film on the perovskite substrate has been found to exhibit a combination of giant magnetoresistance at room temperature with a resistance of ≈300 Ω which is useful for applications. The maxima in resistance and absolute value of negative magnetoresistance are accounted for by the existence of two-phase magnetic states in these films. Fiz. Tverd. Tela (St. Petersburg) 40, 290–294 (February 1998)     

Phase transition in thin epitaxial ferroelectric films as derived from thermal measurements

The temperature dependence of the heat capacity of thin epitaxial films BaTiO₃/MgO is studied by the dynamic 3ω method in the thickness range 50–500 nm. It is revealed that the heat capacity exhibits diffuse anomalies due to phase transitions. The temperature of the ferroelectric phase transition T _C increases with decreasing film thickness. The reasons for the strong diffuseness of the transition and the nonlinear dependence of the transition temperature on the film thickness are discussed.     

Thermodynamic approach to the size dependence of the melting temperatures of films

The size dependence of melting temperature T _m of metallic films (tin and copper) on different substrates, including amorphous carbon and another refractory metal (i.e., the dependence of T _m on film thickness h) is investigated. It is found that the effect of the interfacial boundary can result in the growth of T _m for thin metallic films on carbon substrates with a reduction in film thickness h. For a system with a metallic film on a metallic substrate, the size dependence of T _m is less pronounced and T _m falls with a reduction in h.     

La0.67Ca0.33MnO3(001)薄膜表面结构的扫描隧道显微术研究

利用Scanning Tunneling Microscope(STM)和Scanning Tunneling Spectroscopy(STS)技术研究了La_0.67Ca_0.33MnO₃(001)表面性质,研究发现表面呈现多相分离现象,在锰氧终端面观察到了绝缘性的( 2 × 2 )R45°重构表面和金属性的(1×1)重构表面,在镧钙氧终端面,观察到了表面呈现条纹状结构.La_0.67Ca_{0.33 关键词： 镧钙锰氧薄膜 终端面 绝缘金属转变}     

Charge ordering and structural transitions in Pr0.5Sr0.41Ca0.09MnO3

The structural and magnetic transitions in Pr_0.5Sr_0.41Ca_0.09MnO₃ have been investigated by neutron diffraction and electron microscopy. Two structural transitions, Imma to I4/mcm and I4/mcm to Pmmn, are observed by decreasing the temperature. Two magnetic transitions, from a paramagnetic insulating to a ferromagnetic metallic and from a ferromagnetic metallic to an antiferromagnetic insulating states at T_C=250 K and T_N=180 K, respectively, are also observed. The structures of these three forms have been determined from neutron powder diffraction data. The first important result concerns the low temperature antiferromagnetic CE type and charge ordered structure, which has been refined in the Pmmn space group, without any constraint. This structure is completely long range ordered, with two Mn-sites, Mn³⁺ in tetragonally elongated octahedra, and Mn⁴⁺, off-centered in nearly regular octahedra. The second important point concerns the abrupt character of the structural transition from the I4/mcm to the Pmmn structure, without any appearance of incommensurability. The magnetic and transport properties of this compound are compared with those of Pr_0.5Sr_0.5MnO₃.     

Mössbauer spectroscopic study of the thermal spin crossover in [Fe(II)(isoxazole)6](ClO4)2

The ⁵⁷Fe Mössbauer spectroscopy of mononuclear [Fe(II)(isoxazole)₆](ClO₄)₂ has been studied to reveal the thermal spin crossover of Fe(II) between low-spin (S=0) and high-spin (S=2) states. Temperature-dependent spin transition curves have been constructed with the least-square fitted data obtained from the Mössbauer spectra measured at various temperatures between 84 and 270 K during a cooling and heating cycle. This compound exhibits an unusual temperature-dependent spin transition behaviour with T_C(↓)=223 and T_C(↑)=213 K occurring in the reverse order in comparison to those observed in SQUID observation and many other spin transition compounds. The compound has three high-spin Fe(II) sites at the highest temperature of study of which two undergo spin transitions. The compound seems to undergo a structural phase transition around the spin transition temperature, which plays a significant role in the spin crossover behaviour as well as the magnetic properties of the compound at temperatures below T_C. The present study reveals an increase in high-spin fraction upon heating in the temperature range below T_C, and an explanation is provided.     

Variety of LaSrMnO structures induced by growth conditions and laser irradiation

Crystallographic phase transitions in perovskite-like LaSrMnO metallic oxides are studied. The transitions are induced when internal stresses generated during film synthesis (at temperatures between 450 and 730°C) vary (decrease or increase) upon subsequent irradiation by a KrF laser emitting in the UV range. As the synthesis temperature T _s grows, the rhombohedral-to-orthorhombic phase transition occurs at 650–670°C. The resistivity is shown to be either temperature-independent, ρ(T)=const, at T<T _crit, or varies and reaches a maximum, ρ(T)=ρ_max, at the Curie temperature T _c. Optical transmission spectra taken at photon energies ℏω=0.5–2.5 eV exhibit both a high (0.8–0.9) and low (0.1–0.3) transmission coefficient t, depending on the synthesis temperature. As follows from X-ray diffraction data, the laser irradiation causes a phase transition only in LaSrMnO films grown at T _s<650°C. Phases of different size scales appear: the long-range-order orthorhombic matrix and mesoscopic-range-order rhombohedral clusters are observed in the films grown at T _s=450–550°C and the rhombohedral matrix with orthorhombic clusters, in the films grown at T _s=550–650°C.     

New features from transparent thin films of EuTiO3

ABSTRACT

The almost multiferroic perovskite EuTiO₃ (ETO) has been prepared as films on substrates of SrTiO₃. For all prepared film thicknesses highly transparent insulating films with atomically flat surfaces and excellent orientation have been grown. They were characterized by X-ray diffraction, magnetic susceptibility and birefringence measurements and found to exhibit bulk properties, namely an antiferromagnetic transition at T_N = 5.1 K and a structural transition at T_S = 282 K. The latter could only be identified due to the high transparency of the samples since the optical band gap is of the order of 4.5 eV and larger than observed before for any bulk and thin film samples.     

Effect of isovalent doping of manganite (La1?xPrx)0.7Ca0.3MnO3 films (0≤x≤1) on their optical, magnetooptical, and transport properties near the metal-insulator transition

The optical, magnetooptical, and electric properties of epitaxial (La_1−x Pr_x)_0.7Ca_0.3MnO₃ films (0≤x≤1) grown by MOCVD on LaAlO₃ and SrTiO₃ substrates were studied. It is shown that the decrease in the average cation radius resulting from isovalent substitution of the Pr for La ions brings about a lowering of the Curie temperature, the metal-insulator transition temperature, and the temperatures of the maxima in magnetotransmission (MT) and magnetoresistance (MR). These temperatures depend only weakly on the substrate type. Substitution of La by Pr does not change the shape of the spectral response of the transverse Kerr effect. For concentrations x≤0.50, the maximum values of the Kerr effect and of the MT vary insignificantly, which should be assigned to the existence of a singly connected ferromagnetic metallic region at low temperatures. In films with x=0.75, the presence of ferromagnetic metallic drops in an antiferromagnetic insulating matrix was revealed. The totality of the experimental data obtained suggest that nanoscopic magnetic and electronic nonuniformities exist both in films with a singly connected metallic region and in an x=1 film, which is an antiferromagnetic insulator. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 7, 2004, pp. 1203–1213. Original Russian Text Copyright ? 2004 by Sukhorukov, Loshkareva, Gan’shina, Kaul’, Gorbenko, Mostovshchikova, Telegin, Vinogradov, Rodin.     

SiC film growth on Si(111) by supersonic beams of C 60

The development of electronic devices based on Silicon Carbide (SiC) has been strongly limited by the difficulties in growing high quality crystalline bulk materials and films. We have recently elaborated a new technique for the synthesis of SiC on clean Si substrates by means of supersonic beams of C₆₀: the electronic and structural properties of the film can be controlled by monitoring the beam parameters, i.e. flux and particles energy and aggregation state. SiC films were grown in Ultra High Vacuum on Si(111)-7×7, at substrates temperatures of 800 ^° C, using two different supersonic beams of C₆₀: He and H₂ have been used as seeding gases, leading to particles energy of 5 eV and 20 eV, respectively. Surface characterisation was done in situ by Auger and X-Ray photoelectron spectroscopy, as well as by low energy electron diffraction and ex situ by atomic force microscopy technique. SiC films exhibited good structural and electronic properties, with presence of defects different from the typical triangular voids. Received 20 November 2001     

Auger line shape changes in epitaxial (111)Pd/(111)Cu films

Epitaxial Pd films ranging in thickness from a few tenths of a monolayer up to many monolayers were formed on (111)Cu substrate films at room temperature under UHV conditions. The growth of these Pd films was monitored in situ by Auger electron spectroscopy. The line profiles of the Cu MMM (61 eV) and Pd MVV (329 eV) AES doublets varied significantly with the amount of Pd deposited. A new measure of the AES doublet line profile, called the R-factor, was defined. A graph R_pd versus Pd film thickness shows a sharp decline with increasing thickness. Superimposed on the major trend is a cyclical variation. A corresponding periodicity in R_cu was observed for the Cu MMM (61 eV) AES doublet. The results suggest that the R-factor provides a direct measure of changes in the electronic structures of the overgrowth and substrate films as the former thickens by a layer-growth mechanism.     

Anomalous behavior of the surface tension at the interface of the metallic and insulating phases in the vicinity of the metal-insulator phase transition in a magnetic field

Mean-field equations describing the metal-insulator (MI) transition are formulated. They involve two coupled order parameters characterizing this transition: (i) a scalar order parameter describing the density change accompanying the transition from the insulating state to the metallic one and (ii) an order parameter (a two-component vector) describing the electron density in the metallic or semimetallic phase affected by the applied magnetic field. Two components of this vector correspond to different possible spin states of electrons in the applied magnetic field. The transition in the density of metallic and insulating phases being a first order phase transition is treated in terms of the Cahn-Hilliard-type gradient expansion. The transition in the electron density is a second order phase described by the Ginzburg-Landau-type functional. The coupling of these two parameters is described by the term linearly dependent on the electron density n in the metal with the proportionality factor being a function of the density of the metallic phase. The derived equations are solved in the case of the MI interface in the presence of both parallel and perpendicular uniform magnetic fields. The calculated surface tension Σ_mi between the metallic and insulating phases has a singular behavior. In the limit of zero electron density n ? 0, Σ_mi ～ n ^3/2. Near the MI transition point T _c(h) in the applied magnetic field, Σ_mi ～ [T - T _c(h)]^3/2. The singular behavior of the surface tension at the MI interface results in the clearly pronounced hysteresis accompanying the transition from the insulating to metallic state and vice versa.