射频超导腔加速性能的改进

为提高超导加速腔的加速梯度和Q值，改进了薄膜型超导腔的加速性能。研究证明，对于铜铌溅射腔，在无氧铜衬底和铌膜之间加入NbN 层可以提高铌膜的超导转变温度，改善晶格结构；对纯铌超导腔提出了改进方法，在传统的纯铌超导腔表面制备多层的超导-绝缘-超导复合膜可以屏蔽Nb腔表面的界面场，提高超导腔的临界磁场，从而提高了铌腔的加速梯度。     

射频超导腔加速性能的改进

 为提高超导加速腔的加速梯度和Q值，改进了薄膜型超导腔的加速性能。研究证明，对于铜铌溅射腔，在无氧铜衬底和铌膜之间加入NbN 层可以提高铌膜的超导转变温度，改善晶格结构；对纯铌超导腔提出了改进方法，在传统的纯铌超导腔表面制备多层的超导-绝缘-超导复合膜可以屏蔽Nb腔表面的界面场，提高超导腔的临界磁场，从而提高了铌腔的加速梯度。     

铜铌溅射型低β超导腔的研制及初步实验

超导谐振腔是超导加速器的关键部件.用于重离子超导加速器的低β加速腔的最佳选择是四分之一波长谐振腔(QWR).目前,利用无氧铜为基底,溅射一层几微米厚的铌膜,可以获得极好的超导性能和加速离子性能.但是,四分之一波长谐振腔的内表面复杂,溅射均匀的铌膜比较困难.针对此难题,发展了一种多参数可调节的溅射方法,在640×φ220的大型腔体内,成功地生成了一层均匀的、超导性能优异的铌膜.超导腔的低温实验表明铌膜的性能良好.     

溅射方法干式处理超导加速腔表面的研究与分析

详细研究了利用超高真空氩离子清洗技术发展的一种超导铌腔表面的“干式”处理方法,从微观和宏观角度分析了溅射处理对铌的表面特性和对超导腔性能的影响.与传统的“湿式”处理方法(化学抛光BCP和电抛光EP)相比,干式处理方法具有结构简单、容易控制、没有污染等优点,是一种很有潜力的超导腔处理方法,可以提高超导腔的性能. 关键词： 超导加速腔 溅射 形貌分析 残留电阻比RRR     

北京大学国产大晶粒铌材超导腔的性能研究

大晶粒铌材是射频超导领域的研究热点之一.采用大晶粒铌材的射频超导谐振腔,其后处理工艺可以大大简化.北京大学对此进行了深入细致的研究,自主研制了采用国产大晶粒铌材的射频超导腔,对这些超导腔进行了简单的表面处理,包括标准的化学抛光(BCP)和120.C低温烘烤处理,未进行非常复杂的电抛光处理,低温性能测试结果表明其低温超导性能优越,大晶粒1.3GHz超导腔的加速梯度达到了43.5MV/m,为我国超导加速器的国产化打下了基础.     

北京大学国产大晶粒铌材超导腔的性能研究

大晶粒铌材是射频超导领域的研究热点之一. 采用大晶粒铌材的射频超导谐振腔, 其后处理工艺可以大大简化. 北京大学对此进行了深入细致的研究, 自主研制了采用国产大晶粒铌材的射频超导腔, 对这些超导腔进行了简单的表面处理, 包括标准的化学抛光(BCP)和120℃低温烘烤处理, 未进行非常复杂的电抛光处理, 低温性能测试结果表明其低温超导性能优越, 大晶粒1.3GHz超导腔的加速梯度达到了43.5MV/m, 为我国超导加速器的国产化打下了基础.     

提高射频超导加速腔性能的表面干式处理研究

射频超导谐振腔以其优越性在加速器领域起到了常温加速腔无法替代的作用. 超导腔的表面 特性直接影响到加速腔的性能. 为进一步提高超导腔的加速性能，北京大学利用超高真空氩 离子清洗技术发展了一种超导腔表面的干式处理方法. 与传统的湿处理方法(化学抛光BCP和 电抛光EP)相比，干式处理方法具有其特有的优点，有可能成为一种新的超导腔表面处理方 法，对提高加速腔的性能起到推动作用. 进一步的研究正在进行之中. 关键词： 射频超导 表面处理 溅射 抛光     

上海光源500MHz超导腔水平测试

上海光源是能量为3.5 GeV的第三代先进中能同步辐射光源，其储存环上安装了三台超导高频腔补偿电子因同步辐射等原因丢失的能量。为保障上海光源的长期稳定高效运行，中国科学院上海应用物理研究所和上海市低温超导高频腔技术重点实验室共同研制了具备低高次模损失参数和可承受更高入射功率的新型500 MHz超导腔，作为上海光源在线运行超导高频腔的备用腔。超导铌腔经低温垂直测试达到所需加速性能后，需要与高功率输入耦合器、高次模吸收器、低温恒温器等集成并完成水平测试，获得超导腔模组的加速性能、低温性能和真空性能。介绍了超导腔备用腔的研制、集成和测试过程，采用文丘里(Venturi)校准法获得模组的静态功耗反应模组的低温性能，并通过高功率测试获得了超导腔备用腔模组的加速性能。测试结果表明:自主研制的500 MHz超导腔备用腔满足上海光源的工作需求，在超导腔的加速腔压为2.0 MV时，无载品质因数为1.2×109 @4.2 K，且低温模组的静态热损耗为36.1 W。     

磁控溅射多层沉积Nb_3Sn超导薄膜北大核心CSCD

Nb3Sn金属合金是一种性能优良的超导材料。磁控溅射多层沉积是用两个溅射源分层沉积铌和锡,再经过高温退火后获得超导薄膜的方法。用这种方法所获得的超导薄膜的原子组分的调整比较方便,对于Nb3Sn的研究较为有利。实验测量了样品的超导参数和晶格参数,其超导临界温度(Tc)可达17 K,剩余电阻率(RRR)为5左右。需要进一步研究相关工艺,以便提高RRR,从而使这种方法在超导加速腔的制造中得到应用。     

磁控溅射多层沉积Nb_3Sn超导薄膜

Nb3Sn金属合金是一种性能优良的超导材料。磁控溅射多层沉积是用两个溅射源分层沉积铌和锡,再经过高温退火后获得超导薄膜的方法。用这种方法所获得的超导薄膜的原子组分的调整比较方便,对于Nb3Sn的研究较为有利。实验测量了样品的超导参数和晶格参数,其超导临界温度(Tc)可达17 K,剩余电阻率(RRR)为5左右。需要进一步研究相关工艺,以便提高RRR,从而使这种方法在超导加速腔的制造中得到应用。     

氮化铌表面氧化物的XPS研究

本文用X射线光电子能谱(XPS)对室温下自然氧化和射频氧化的氮化铌薄膜表面进行了成分分析。指出:与在类似条件下纯铌膜的氧化不同,NbN膜的表面氧化物中不存在NbO和NbO₂,而是以Nb₂O₃作为从NbN到Nb₂O_5-y的过渡相。氮化铌在氧化过程中表现出一种抑制Nb₂O,NbO等低价传导性氧化物生成的能力,这对于用氧化物作势垒的超导隧道结的研制具有实际参考价值。 关键词：     

Superconductivity of vapour quenched beryllium and beryllium-based alloys

The properties of Be films, quench-condensed upon a³He cooled substrate, have been investigated by resistance and tunneling measurements. The superconducting transition temperature,T _c , of Be films increased with thickness and a thick film limit of 9.95 K could be estimated. Alloying with Al or Pb decreasedT _c. The ratios between energy gaps andT _c 's indicated that Be is a weak coupling superconductor, and no phonon induced structure could be traced in tunneling curves neither in pure Be nor in the Be based alloys. Resistance change during annealing as well as superconducting data indicated that the vapour quenched Be films were amorphous as deposited.     

Metastable phases in YBCO films created by short-term annealings

The effect of short-term low-temperature annealing in air and in vacuum on the properties of HTSC films of YBCO is studied. It is shown that, under certain conditions of preparation of initial samples, a transition from the HTSC phase with the superconducting transition temperature T_c=90 K to a phase with T_c=60 K occurs without a noticeable change in the oxygen content. It is found that, as a result of short-term annealings, a transition from the HTSC phase with T_c=60 K to the phase with T_c=90 K can occur only through the vacuum annealing stage, which converts the sample into the superconducting state. Short-term annealings lead to multiple reversible “switching” of the films from one phase to another. The obtained results are of practical interest, since the proposed method can be used to quickly obtain superconducting YBCO films in various phase states. It is shown, in addition, that the annealing procedure makes it possible not only to increase the oxygen concentration but also to produce a structural rearrangement of a YBCO film.     

Metal-insulator transition and superconductivity in SnAr films

We studied the conductivity and superconducting transition temperature T_c of SnAr films. The films were prepared by condensing the SnAr mixture on a sapphire substrate held at 5 K. A plot of the conductivity as a function of Sn concentration shows a metal-insulator transition which agrees with a percolation model consisting of Sn clusters embedded in solid Ar. A drop of T_c is observed below the percolation threshold.     

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

Magnesium diboride (MgB₂) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB₂ thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature (T_c), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest T_c of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate (T_s) increased, T_c rose. However, the maximum T_s was limited due to the low magnesium sticking coefficient and thus the T_c value was limited as well. The highest T_c, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low T_c, did not have the well-developed MgB₂ grains while the films with higher T_c displayed the well-developed grains and smooth surface. Although the T_c of sputtered MgB₂ films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB₂ heterostructures using rather simple physical vapor deposition method such as sputtering.     

Superconducting properties and phase locking transition in NbN films

We report superconducting measurements on NbN film ($\text{d =}\text{820}\text{A}\text{?}$) obtained by sputtering characterized by a columnar structure (grain size ? 120 Å). At the largest temperatures, the paraconductivity is tri-dimensional and of the Azlamasov-Larkin form. Near T_c it becomes bi-dimensional when 2ξ(T) is larger than the width of the sample. Below T_c, the behavior of the resistance is described in terms of phase-locking transition. The values of the corresponding critical exponents are discussed.     

<Emphasis Type="Italic">Ab initio</Emphasis> calculations of the superconducting transition temperature for NbC at various pressures

Ab initio calculations of the superconducting properties have been performed for niobium carbide (NbC) at normal pressure and upon a 15 and 30% compression. Factors accounting for the relatively low values of the transition temperature T _c in transition metal carbides are considered and the possible ways of increasing this parameter are discussed.     

MgB2 thick films with remarkable ductility on stainless steel substrate

We fabricated several superconducting MgB₂ thick films on stainless steel (SS) substrates by using hybrid physical-chemical vapor deposition (HPCVD) technique. The thickness was in the 10μm to 20μm range, and the onset critical transition temperature T _c (onset) and the width of the superconducting transition (ΔT) were about 37.8 and 1.2 K. They were dense and textured along (101) direction with high tenacity, despite the existence of a little amount of MgO and Mg. We bent the films at different degrees and studied the ductility and transport properties of these MgB₂ thick films under applied force. The results demonstrated that the superconducting properties of these thick films, prepared by HPCVD, stay almost unaffected even with the films bent to a large degree with a curvature of 0.5 mm. This indicated that the superconducting wires or tapes of MgB₂ with a core of SS had the advantages of avoiding rigidity and brittleness in industrial handling. The technique of HPCVD has, therefore, a high application potential. __________ Translated from Chinese Journal of Low Temperature Physics, 2005, 27(2) (in Chinese)     

A comparative study of amorphous and crystalline superconducting molybdenum films by ultraviolet photoemission spectroscopy

Ultraviolet photoemission measurements at two photon energies are carried out, to understand the strong enhancement of the superconducting transition temperature T_c in the nitrogen stabilized amorphous molybdenum films. The rise of T_c can be attributed to a 40% increase of the electronic density of states at the Fermi level N(E_F) and a 15% softening of the phonon spectrum.