中科院完成返回式卫星搭载实验

近日，中科院物理所和金属所合作，共同参与搭载我国第22颗返回式卫星进行空间微重力实验。在空间微重力环境下，观察了银基合金和半导体化合物熔滴形貌变化、液／固界面的润湿过程及熔滴凝固前后接触角的差异，研究了液／固界面反应及特性表征，并成功地完成了近距离摄像机、有视窗加热炉等硬件的研制，取得了预定结果。     

重力及微重力条件下Pd_(40)Ni_(40)P_(20)合金凝固组织中溶质原子的分布特征

研究了Ｐｄ４０Ｎｉ４０Ｐ２０合金在重力（１ｇ）及微重力（μｇ）条件下凝固组织中溶质原子的分布．与重力条件相比，微重力条件下凝固的样品组织中，初生相的Ｐ含量较低，而Ｐｄ的含量较高；共晶区域内的平均Ｐ含量较高而平均Ｐｄ含量较低．深入分析初生树枝晶一次枝晶间距Ｌ与冷却率υ以及固液界面前沿液相中溶质综合输运系数Ｄ的相互关系，发现地面条件下的固液界面前沿液相中溶质综合输运系数Ｄ１ｇ比空间的Ｄμｇ大１７倍．这是造成显微组织中溶质分布差异的主要原因     

重力及微重力条件下Pd40Ni40P20合金凝固组织中溶质原子的分布特征

研究了Pd₄₀Ni₄₀P₂₀合金在重力（1g）及微重力（μg）条件下凝固组织中溶质原子的分布．与重力条件相比，微重力条件下凝固的样品组织中，初生相的P含量较低，而Pｄ的含量较高；共晶区域内的平均P含量较高而平均Pｄ含量较低．深入分析初生树枝晶一次枝晶间距Ｌ与冷却率υ以及固液界面前沿液相中溶质综合输运系数D的相互关系，发现地面条件下的固液界面前沿液相中溶质综合输运系数D_1g比空间的D_μg大1.7倍． 关键词：     

空间材料科学的前沿学科——微重力晶体生长

 一、微重力晶体生长环境人类为了自身的生存,希望有一天能走出地球,从外层空间索取他们赖以生存的部分或全部资源.作为人类走向外层空间的第一步,当然是利用近地空间资源.而微重力资源则是首先受到重视和研究的近地空间资源之一。人们对空间晶体生长的研究,经历了从零重力到微重力的认识阶段.在60年代末到70年代初期,材料科学家们认为天空实验室内的晶体生长过程应是零重力场下的固-液界面反应过程,但一系列空间晶体生长实验表明:由于实验系统运动状态的不稳定,空间晶体生长环境仍然存在重力(g).     

不同重力下窄通道内薄材料表面的火焰传播

在常重力下模拟微重力燃烧对载人航天器的火灾安全具有重要意义.窄通道就是这样一种可以有效限制自然对流的模拟设施.但是,不同重力下火焰传播的相似性仍然是有待研究的问题.本文用实验和数值模拟的方法,比较了不同重力下有限空间内热薄材料表面的逆风传播火焰.不同重力下火焰形状和火焰传播速度的比较表明,1cm高的水平窄通道可以有效地限制自然对流,在常重力下用这种通道能够模拟微重力下相同几何尺寸的通道中的火焰传播.因此,在地面上首先利用水平窄通道,模拟相同环境中的微重力火焰传播,然后考虑通道尺寸变化对火焰传播的影响,有可能成为地面模拟其他尺寸的空间中的微重力燃烧的方法.     

表面张力效应对空间和地面合金凝固行为的影响

为揭示空间微重力条件下合金的凝固特性，分别于１９９０年及１９９６年两次利用我国返回式科学试验卫星，研究了Ａｌ－Ａｌ３Ｎｉ，Ａｌ－ＲＥ等共晶和Ａｌ－Ｂｉ偏晶合金的空间凝固行为．文章结合流体物理理论和两次卫星搭载的实验结果，着重讨论了合金中的表面张力梯度驱动对流和熔滴的Ｍａｒａｎｇｏｎｉ迁移现象及其在偏晶合金地面生产中的应用．     

凝固前沿和气泡相互作用的大密度比格子玻尔兹曼方法模拟

建立了二维双组分两相流的大密度比格子玻尔兹曼方法 (lattice Boltzmann method, LBM)模型. 该模型基于改进的Shan-Chen伪势多相流LBM模型, 结合采用不同时间步长的方法, 实现密度比达800以上的气液两相流模拟. 为了对模型进行验证, 模拟了在不同气液相互作用系数和密度比条件下气泡内外压力差与其半径之间的关系, 其结果满足Laplace定律. 将所建立的大密度比LBM与介观尺度的元胞自动机(cellular automaton, CA)和有限差分法(FDM)相耦合, 用LBM模拟气液两相流, 用CA方法模拟固相生长, 用有限差分法模拟温度场, 采用LBM-CA-FDM耦合模型对定向凝固过程中凝固前沿的气泡与液-固界面之间的相互作用进行模拟研究. 结果表明, 绝热气泡的存在影响了温度场分布, 使得凝固前沿接近气泡时, 液-固界面凸起, 在不同的固相生长速度条件下, 出现凝固前沿淹没气泡或气泡脱离凝固前沿的不同情况, 模拟结果与实验结果符合良好. 关键词： 格子玻尔兹曼方法 元胞自动机 凝固 气泡     

空间熔体材料科学:实践十号返回式科学实验卫星

微重力为深入研究被地面重力掩盖的物理现象提供了难得的机遇。特别是,由于浮力对流得到抑制,同时非接触生长更易实现,空间微重力环境有助于制备组分均匀、低缺陷浓度的合金晶体。基于此,实践十号卫星材料科学项目重点关注如下议题:(1)高质量半导体三元合金晶体生长;(2)金属合金的凝固、缺陷控制及界面现象研究;(3)熔体润湿性及金属基复合材料的合成。卫星在轨期间,各科学实验将依托于温场精确、样品位置可控的空间多功能炉,依次有序开展。基于项目研究,不但有望在晶体生长机理方面形成新见解,还有助于改进地面材料制备工艺。     

急冷条件下Cu-Pb偏晶合金的相分离研究

研究了Cu-Pb偏晶合金的急冷快速凝固和组织形成规律，并通过将金属熔体的热传导方程和Navier-Stokes方程相耦合, 理论分析了合金熔体的冷却速率、液固相变时间等物理参量与液相分离之间的相关性. 研究结果表明，在急冷快速凝固条件下，熔体的快速冷却对偏晶合金组织形成的影响要比熔体内部液相流动的影响更为显著. 快速凝固使液相分离受到抑制，Cu-Pb偏晶合金均可获得均匀的微观组织结构. 随着冷速的增大，晶粒尺寸明显减小，凝固组织显著细化，晶体形态由粗大枝晶向均匀细小的等轴晶过渡. 提高冷却速率，缩短液固相变时间是重力场中抑制液相分离、获得均匀偏晶组织结构的重要条件. 关键词： 偏晶合金 快速凝固 液相分离 微观结构     

平衡接触角对受热液滴在水平壁面上铺展特性的影响

壁面温度是影响壁面润湿性的重要外部条件. 为解决液滴铺展中三相接触线处应力集中问题, 已有研究多采用预置液膜假设, 但无法探究壁面温度对润湿性的影响. 本文针对受热液滴在固体壁面上的铺展过程, 基于润滑理论建立了演化模型, 通过数值模拟, 从平衡接触角角度分析了温度影响壁面润湿性及铺展过程的内部机理. 研究表明: 随温度梯度增大, 液滴所受Marangoni效应增强, 致使液滴向低温区的铺展速率加快; 铺展过程中, 位于高温区的接触线与液滴主体部分间形成一层薄液膜, 重力与热毛细力先后主导该区域的铺展; 当液-固或气-液界面张力对温度的敏感度高于另两个界面时, 低温区方向的平衡接触角不断增大, 使壁面润湿性恶化, 导致液滴铺展减慢; 而当气-固界面张力对温度的敏感度高于其他两个界面时, 低温区方向上的平衡接触角将减小, 由此改善壁面润湿性, 加快液滴铺展; 在温度影响壁面润湿性和液滴铺展过程中, 平衡接触角起关键作用.     

Wettability and reactivity of molten silicon with various substrates

Contact angles of molten silicon on various substrates have been determined using the sessile drop method and reactivity has been investigated by examining cross sections between silicon and substrates with an electron-probe microanalyzer (EPMA). The contact angles between molten silicon and oxide substrates, such as SiO₂(s), Al₂O₃(s) and MgO(s), are in the range 85° to 88°. The reaction zone is composed of forsterite (2MgO·SiO₂) and clinoenstatite (2MgO·2SiO₂) on the MgO(s)-side of the interface between the Si and MgO. The contact angle between molten silicon and Si₃N₄ is about 90°. Molten silicon spreads over the SiC plate and the contact angle is estimated to be 8°. Large contact-angle values (around 145°) have been observed on BN substrates. At the interface between Si(l) and the BN substrate, a discontinuous Si₃N₄ layer is believed to form and might retard the dissolution of BN into molten silicon. The BN substrate is regarded as being the most suitable substrate for supporting a molten silicon drop during surface tension measurements, due to the large contact angle and low contamination. PACS 68.08.Bc; 06.30.Bp; 73.40.Ns; 61.72.Tt     

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy

In this paper, the impact of growth parameters on the strain relaxation of highly lattice mismatched (11.8%) GaSb grown on GaP substrate by molecular beam epitaxy has been investigated. The surface morphology, misfit dislocation and strain relaxation of the GaSb islands are shown to be highly related to the initial surface treatment, growth rate and temperature. More specifically, Sb-rich surface treatment is shown to promote the formation of Lomer misfit dislocations. Analysis of the misfit dislocation and strain relaxation as functions of the growth temperature and rate led to an optimal growth window for a high quality GaSb epitaxial layer on (001) GaP. With this demonstrated optimized growth, a high mobility (25?500?cm(2)?V (-1)?s(-1) at room temperature) AlSb/InAs heterostructure on a semi-insulating (001) GaP substrate has been achieved.     

Formation and crystal structure of GaSb/GaP quantum dots

The atomic structure of GaSb/GaP quantum dots grown via molecular beam epitaxy on a (100) GaP surface at epitaxy temperatures of 420–470°C is investigated. It is established that, depending on morphology of the GaP growth surface, the deposition of 1 ML of GaSb leads to the formation of strained Ga(Sb, P)/GaP or fully relaxed GaSb/GaP quantum dots. The obtained heterostructures exhibit high photoluminescence efficiency.     

Evaporation-coupled wetting of ZrO2 by molten Mg in Ar atmosphere

The wetting behaviors of molten Mg drops on polycrystalline ZrO₂ substrate surfaces were studied in a controlled Ar atmosphere at 948–1173 K using an improved sessile drop method. The ZrO₂ substrate is virtually not wetted by molten Mg at temperatures below 1173 K. The wetting and evaporation stages according to different variation behaviors of contact angle, contact diameter and drop height were identified. Six representative modes were proposed to describe the evaporation-coupled wetting behaviors during different stages. The competitions between surface oxidation, chemical reaction and drop evaporation were discussed to account for the mechanisms for various wetting behaviors at different temperatures. The chemical reaction leads to the formation of more wettable MgO phase at the interface; however, it yields only an inconspicuous improvement in the wetting due to enhanced Mg evaporation.     

Wetting and coalescence of the liquid metal on the metal substrate

Molecular dynamics(MD) simulations are performed to investigate the wettability of liquid metal on the metal substrate. Results show that there exists different wettability on the different metal substrates, which is mainly determined by the interaction between the liquid and the substrate. The liquid metal is more likely to wet the same kind of metal substrate,which attracts the liquid metal to one side on the hybrid substrate. Exchanging the liquid metal and substrate metal has no effect on the wettability between these two metals. Moreover, the study of metal drop coalescing indicates that the metal substrate can significantly affect the coalescence behavior, in which the changeable wettability of liquid metal plays a predominant role. These studies demonstrate that the wetting behavior of liquid metal can be controlled by choosing the suitable metal substrate.     

GaP低阻欧姆接触层的AES和SIMS分析

本文用AES和SIMS分析讨论了p-GaP与三层金属膜Pd/Zn/Pd形成良好欧姆接触层的性质.     

GS-MBE生长的GaP/Si的XPS研究

利用X射线光电子能谱(XPS)深度剖析方法对气体源分子束外延(GS-MBE)生长的GaP/Si异质结构进行了详细的分析.其结果表明:(1)外延层内Ga、P光电子峰与GaP相相符,且组份分布均匀,为正化学比GaP.(2)在不同富PH₃流量条件下生长的样品,其表面富P量稍有不同,而GaP外延层内的测试结果相同.界面也未见有P的富集.(3)XPS剖析至GaP/Si界面附近,随外延层界面向衬底过渡,Si2p光电子峰向高结合能方向移动,且其结合能高于原衬底p型Si,接近于n型Si.但Ga、P光电子峰未发现有明显能移.(4)在XPS检测限内,外延层内和界面都未见有C、O等沾污.这一研究表明:无污染的本底超高真空、相对过剩的富₃生长环境、成功的Si衬底清洗方法等措施保证了GS-MBE生长出正化学比GaP/Si外延异质结构.     

Effect of magnesium addition on the wetting of alumina by aluminium

In this report the wetting behaviour between polycrystalline alumina substrates and molten aluminium doped with magnesium as a wetting agent has been studied using the sessile drop technique. The time required for equilibrium attainment is investigated. To explore the formation of possible phases at the interface, electron microscopic studies along with EDX analysis have been employed. It is found that magnesium reduces the time and temperature required for equilibrium in the Al/Al₂O₃ system. The Al-7 wt% Mg and Al-10 wt% Mg alloys can wet alumina at temperatures as low as 900 °C. It is also found that molten aluminium doped with magnesium can wet polycrystalline alumina at temperatures below 1000 °C. A thin reaction layer was observed at the Al-Mg/Al₂O₃ interface in the present study.     

New insights on contact angle/roughness dependence on high surface energy materials

The relationship between wettability and roughness has been studied on micro-roughened titanium surface after different cleaning procedures. Whereas most studies addressing (super)-hydrophobic behaviors have so far dealt with the wetting of low surface energy and textured substrates in air environment, we here report on a totally novel system and configuration involving the wetting of highly hydrophilic, textured metallic materials in liquid alkane medium, the so-called two liquid phase method. Roughness characterization showed that substrates were isotropic (2D), at a lengthscale much smaller than the size of the drop, with a heterogeneous (vertical) distribution of peaks and valleys. Depending on whether the alkane that initially penetrates and resides in the pores is displaced or not by the water drop (as for air pockets in air environment), we show that different wetting regimes may appear, depending on the cleaning procedure. To our knowledge, this is the first systematic study dealing with the interplay between surface roughness, the wetting behavior and in particular the (super)-hydrophilicity of high surface energy substrates, in non water miscible liquid environments. Whenever competitive processes of liquid/liquid displacement are involved at such high surface energy and textured substrates, such as titanium implant in bone tissue, these results may contribute understanding and predicting their wetting behavior.     

InAs/(GaIn)Sb superlattices for IR optoelectronics: Strain optimization by controlled interface formation

The structural properties of InAs/(GaIn)Sb and (InGa)As/GaSb superlattices (SLs), grown by solid-source molecular-beam epitaxy on GaAs substrates using a strain relaxed GaSb or InAs buffer layer or directly on InAs substrates, were analyzed by high-resolution X-ray diffraction and Raman spectroscopy. The residual strain within the SL was found to depend critically on the type of interface bonds, which can be either InSb- or GaAs-like. Thus, to achieve lattice matching to the buffer layer or substrate by strain compensation within the SL stack, the controlled formation of the interface bonds is vital. On the other hand, minimization of the residual strain is shown to be a prerequisite for achieving a high photoluminescence yield and high responsivities for InAs/(GaIn)Sb SL based IR detectors.