Pulsed electron-beam melting of a copper — steel 316 system: Evolution of the chemical composition,microstructure, and properties

The surface topography, chemical composition, microstructure, nanohardness, and tribological characteristics of a Cu (film, 512 nm)-stainless steel 316 (substrate) system subjected to pulsed melting by a low-energy (20–30 keV), high-current electron beam (2–3 μs, 2–10 J/cm²) were investigated. The film was deposited by sputtering a Cu target in the plasma of a microwave discharge in argon. To prevent local exfoliation of the film due to cratering, the substrate was multiply pre-irradiated with 8–10 J/cm². On single irradiation, the bulk of the film survived, and a diffusion layer containing the film and substrate components was formed at the interface. The thickness of this layer was 120–170 nm irrespective of the energy density. The diffusion layer consisted of subgrains of γ-Fe solid solution and nanosized particles of copper. In the surface layer of thickness 0.5–1 μm, which included the copper film quenched from melt and the diffusion layer, the nanohardness and the wear resistance nonmonotonicly varied with energy density, reaching, respectively, a maximum and a minimum in the range 4.3–6.3 J/cm². As the number of pulsed melting cycles was increased to five in the same energy density range, there occurred mixing of the film-substrate system and a surface layer of thickness ∼2 μm was formed which contained ∼20 at. % copper. Displacement of the excess copper during crystallization resulted in the formation of two-phase nanocrystal interlayers separating the γ-phase grains. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 6–13, December, 2005.     

Effect of focusing of primary electrons on their reflection from a crystal and on the associated Auger emission

The orientational dependence for different groups of secondary electrons — quasi-elastically scattered, inelastically reflected with excitation of a plasmon and with ionization of the core level M _4.5, and the Auger electrons M _4.5 VV — are measured in the primary electron energy range 0.6–1.5 keV. The data are obtained for a Nb (100) single crystal by varying the azimuthal angle of incidence of the primary beam, with complete collection of secondaries. A relationship is established between the processes of focusing and defocusing of the electrons that have penetrated into the crystal in the 〈110〉 and 〈133〉 directions, which differ substantially in the atomic packing density. Specific details of the Auger orientation effect, due to the focusinginduced variation of the flux density of the reflected electrons, are identified and explained. The contributions, both of anisotropy of ionization of the core level and of variation of the backscattering intensity, to the angular dependence of Auger emission and reflection with ionization loss are estimated. The possibilities of using such orientational dependences for an element-sensitive analysis of the local atomic structure of surfaces are assessed. Zh. Tekh. Fiz. 67, 117–123 (August 1997)     

Electron yield per ion charge-state correction for an ion collector with unsuppressed secondary electron emission

The electron yield per ion charge-state γ/q was measured for emission of electrons from clean polycrystalline gold induced due to impact of Ta ^q+ (11≤q≤41) ions with kinetic energy per chargeE _i/q from 15 keV/q to 150 keV/q. The dependence of γ on angle of incidence was analyzed with use of relation γ(ϑ)=γ₀ cos^−f ϑ. The fitting of experimental data gives a range of γ₀/q from 1 to 1.75 for Ta¹³⁺ and from 1.5 to 1.73 for Ta³⁹⁺. The dependence of γ₀/q onq andE _i is discussed with respect to measurement of ion currents emitted from laser-produced plasmas with an ion collector with unsuppressed secondary electron emission. This work was supported by the Division of Chemical Sciences, Office of Basic Energy Sciences, Office of Energy Research, U.S. Department of Energy, and by grant A1010819 from the Grant Agency of the Academy of Sciences of the Czech Republic.     

Formation of electronically excited states in ultrathin Alq3 films during electron bombardment

Electronic and vibrational electron energy loss spectra are studied on ultrathin Alq₃ films for different electron energies, thicknesses, and temperatures of the film. The shape of the spectrum and the position of the lines are very weakly dependent on the film thickness, indicating weak interaction between the adsorbed molecules and the platinum substrate. The temperature dependence of the vibrational bands is weak. The positions of the triplet and singlet maxima are close to gas-phase and thin-film data obtained for high electron energy. Interference of electrons is observed in measuring the energy loss spectra. The effect of dipole and collisional excitation mechanisms is shown. From the similarity between the energy loss spectra it follows that the nature of the interaction between low-energy electrons and organic materials is the same in gas and thin-film phases, and likewise for the characteristics of the motion of the electrons. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 6, pp. 786–791, November–December, 2006.     

Nuclear structure investigations in the region of superheavy nuclei

Radioactive decay from the ground state or isomeric states has been investigated for a series of nuclei in the region of Z = 100–106 by means of α–γ—or evaporation residue-(γ, conversion electron)—measurements in prompt and delayed coincidence. Systematic trends in single-particle level energies in N = 145–151 odd-even isotones could be extended up to Z = 104, while an energy systematics of lowlying Nilsson levels in odd-mass einsteinium isotopes was established. Information on nuclear levels at E* > 500 keV was obtained from the decay study of isomeric states in ^251−255No. The text was submitted by the author in English.     

a-Si/SiN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> multilayered light absorber for solar cell

40 alternate a-Si/SiN _x multilayer are incorporated as an absorber layer in a p–i–n solar cell. The device is fabricated using hot-wire chemical vapor deposition (HWCVD) technique. The structure of the multilayer film is examined by high resolution transmission electron microscopy (HR-TEM) which shows distinct formation of alternate a-Si and SiN _x layers. The a-Si and SiN _x layers have thickness of ~3.5 and 4 nm, respectively. The photoluminescence (PL) of multilayer film shows bandgap energy of ~2.52 eV, is larger than that of the c-Si and a-Si. Dark and illuminated current–voltage (I–V) characterization of the ML films shows that these ML are photosensitive. In the present work, it is seen that the p–i–n structure with i-layer as ML quantum well (QW) structures show photovoltaic effect with relatively high open-circuit voltage (V _OC). The increment of bandgap energy in PL and high V _OC of the device is attributed to the quantum confinement effect (QCE).     

Nuclear DVCS at small <Emphasis Type="Italic">x</Emphasis> using color-dipole phenomenology

Using the high-energy color-dipole formalism, we study the coherent and incoherent nuclear DVCS process, γ ^* A→γ  X, in the small-x regime. We consider simple models for the elementary dipole–hadron scattering amplitude that capture the main features of the dependence on atomic number A, on energy and on momentum transfer t. Using the amplitudes obtained we make predictions for the nuclear DVCS cross section at the photon level in collider kinematics.     

Corresponding states theory for the prediction of surface tension of ionic liquids

The surface tension of ionic liquids is studied according to phenomenological scaling and the law of corresponding states. The reduced coordinates γ*–T*, where γ* represents the reduced surface tension and T* is the reduced temperature, are introduced for the prediction of the surface tension from the melting point up to boiling point. It has been shown that the correlation can be expressed as a unique straight-line plot with a linear correlation coefficient of 0.984 that requires only the melting and boiling point parameters and can predict the surface tension accurately.     

Nonlinear repolarization processes in ferroelectric liquid-crystal thin films

The dynamics of spontaneous polarization switching of the ferroelectric smectic C* in a variable electric field are examined theoretically and experimentally with the help of polarized light scattering. The observed effect of quasiresonant scattering both in freely suspended smectic films and in ordinary electro-optical cells is interpreted within the framework of the nonlinear model of isolated movable kinks in the director orientation distribution. It is shown that the maximum of the scattering intensity at the characteristic frequency of the applied electric field disappears at low temperatures and for small thicknesses of the smectic film. The dependence of the “resonant” frequency on the electric field amplitude, the proximity to the phase transition temperature, the film thickness and thickness of the ferroelectric domains, and also various material parameters is found. Estimates are made of such important characteristics as the dielectric anisotropy, viscosity, and elasticity of the smectic films. The effect of film thickness on the density distribution of the polar anisotropy energy in the film and on the corresponding shape of the moving orientation front within the film are discussed. Zh. éksp. Teor. Fiz. 111, 919–937 (March 1997)     

Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film

The surface transport properties of naturally oxidized p-type Hg_0.776Cd_0.224Te thin film were investigated in the magnetic-field region 0–14 T and in the temperature region 8–300 K. The Hall electron concentration increases with temperature, while the surface concentration of the two-dimensional electrons in the naturally oxidized surface, calculated by Shubnikov–de Haas oscillations, decreases as temperature increases at temperatures below 20 K. The contradiction and the extraordinary quantum Hall filling factors are accounted for by assuming extra bulk-like electrons in the surface region, which dominate the surface transport properties at temperatures over 8 K.     

Ionization of atoms in weak fields and the asymptotic behavior of higher-order perturbation theory

Using the imaginary time method, we study the structure of the perturbation series for the hydrogen atom in electric ℰ and magnetic ℋ fields. It is shown that there is a “critical” value of the ratio γ=ℋ|ℰ at which the perturbation series for the ground state changes from having a fixed sign (for γ<γ _c ) to having a variable sign (for γ>γ _c ). This conclusion is confirmed by direct higher-order perturbation calculations. The change in the asymptotic regime is explained by competition among the contributions of the various complex trajectories that describe the subbarrier motion of the electrons. Here the parameter γ _c depends on the angle θ between the electric and magnetic fields. Zh. éksp. Teor. Fiz. 113, 2047–2055 (June 1998)     

Electronic spectrum in a quantum double CdS/β-HgS/H2O cylindrical wire

The electronic spectrum in a cylindrical CdS/β-HgS semiconductor heterosystem of the quantum wire type located in an H₂O dielectric medium is investigated. In the energy interval where the levels of both potential wells merge, there is a repulsion effect on the levels (a “bottleneck” effect). The nonmonotonic dependence of the electron and hole spectra on the thickness of the β-HgS film means that in experiments there is an instability of the energy position of the exciton lines in a certain frequency range. Chernovits State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 79–85, May, 1997.     

Optical and magneto-optical properties of Fe/Cu multilayered films: Influence of the modulation period and the bcc-fcc phase transition in iron

The optical and magneto-optical properties of multilayered film samples of the Fe/Cu system prepared by high-frequency sputtering on an Si(100) substrate are studied by ellipsometry and by measuring the equatorial Kerr effect (the δ _p effect) in the spectral range 0.25–7 μm. The optical characteristics, the plasma frequency ω _p and the relaxation frequency γ ₀ of the conduction electrons, and the δ _p effect are found as functions of the modulation period D=12.5–100 Å. Anomalous behavior of the optical and magneto-optical characteristics is discovered in short-period Fe/Cu structures. The results are discussed within a phenomenological theory of optical and magneto-optical properties for layered structures. Several factors, such as the indirect exchange interaction between the iron layers, the presence of a transition layer on the internal boundaries, the possible “magnetizing” of copper, and the formation of an fcc iron phase in the thin layers, are taken into account in the analysis of the experimental data. Zh. éksp. Teor. Fiz. 112, 1694–1709 (November 1997)     

Magnetoplasma resonance in a GaAs/AlGaAs quantum well in a strong parallel magnetic field

The dispersion of magnetoplasma excitations in two-dimensional electron systems in a strong parallel magnetic field has been studied. A considerable increase in the electron cyclotron mass with an increase in the parallel component of magnetic field has been detected. It has been found that the cyclotron mass increment is a quadratic function of the magnetic field parallel to the interface. It has been shown that the mass anisotropy of 2D electrons induced by the parallel magnetic field reaches nearly 2.5 in B _‖ = 7 T. The energy of space quantization of the electron in the quantum well has been estimated from the magnetic field dependence of the anisotropy.     

Adsorption effect in non-reaction wetting: In–Ti on CaF2

The experiments show that the alloying liquid In with only (0.1–0.5) at% Ti dramatically reduces the equilibrium contact angle Θ _∞ formed by In on the surface of CaF₂. The aim of this paper is to clarify whether this practically important and conceptually challenging effect can be explained solely by Ti adsorption at the F-terminated solid–liquid interface without resorting to any other Ti-induced effect. The combination of ab initio calculations and regular solution approximation was proposed for finding the binding energy, ΔE _Ti of Ti adatom with the interface “CaF₂/liquid solutions In–Ti.” With thus obtained ΔE _Ti=1.16 eV, we calculated from the Shishkovsky isotherm the reduction in the solid–liquid interface energy, Δγ _SL induced by Ti adsorption from liquid In with various Ti concentration, C. It was found that Δγ _SL(C) dependence demonstrated close inverse correspondence with Θ _∞(C) and that the theory fitted very well all available experimental data on the concentration and temperature dependence of Δγ _SL. It was concluded that the Ti adsorption effect is large enough to account for the observed wetting improvement. The proposed multiscale modeling approach to the role of adsorption in wetting can be applied also to other nonreactive systems “liquid metal–ceramics” where the substrate determines the surface density of the adsorption sites for the active element.     

The mystery of the alkali metals; the induced anomalous Hall effect in thin Cs films

Sandwiches made from Fe and Cs films are investigated as a function of the magnetic field and the Cs thickness. Conduction electrons which cross from the Fe to the Cs are marked by a drift velocity component perpendicular to the electric field. The anomalous Hall effect in the Fe provides this “non-diagonal” kick to the electrons that cross from the Fe into the Cs. The ballistic propagation of the conduction electrons can be monitored as a function of the Cs film thickness. The free propagation into the Cs is measured in terms of the non-diagonal conductance L_xy which we denote as the “induced anomalous Hall conductance”L _xy ⁰. For a normal (non-magnetic) metal in contact with Fe, L_xy increases with the thickness of the normal metal until the film thickness exceeds (half) the mean free path of the conduction electrons. For Cs on top of Fe the induced anomalous Hall conductance increases up to a Cs coverage of about 100 A, then, in contrast to other non-magnetic metals, L _xy ⁰ decreases for larger Cs coverage and approaches zero. This behavior cannot be explained with the free electron model. The strange behavior of the induced AHC in Cs films adds an even more challenging mystery to the already poorly understood properties of thin Cs films. These results defy explanation in the free electron model. Received 29 April 1999 and Received in final form 10 July 1999     

A theoretical practice on grazing‐exit energy dispersive X‐ray spectroscopy as a surface analysis strategy to investigate BiVO4 nano‐films

In the current work, a thin film of bismuth vanadate was defined over a silicon substrate, and a calculative Monte Carlo approach was followed to achieve the best grazing‐exit angle to acquire compositional data from top few nanometers of surface. This strategy is very beneficial in order to increase X‐ray signals originated from surface and diminish the background X‐ray signals started off from the substrate. In this regard, grazing‐exit energy dispersive X‐ray spectroscopy can be considered as an accessible and economical analytical tool to investigate thin films and nano‐layers. The major advantage of this method is that just by applying a re‐arrangement in a scanning electron microscope, it can be used to study compositional properties of thin layers. In this contribution, a theoretical approach using Monte Carlo models was used to simulate the behavior of electron beams impinging onto BiVO₄ nano‐layers with thickness of 50 nm and electron trajectories inside the film. Characteristic X‐rays and spatial energy distribution of the backscattered electrons were also calculated. Under grazing‐exit angle of around 0.5°, the best surface signal/background noise ratio was achieved. Copyright © 2014 John Wiley & Sons, Ltd.     

Unoccupied electronic states and the interface formation between oligo(phenylene-vinylene) films and a Ge(111) surface

Thin films of tri-oligo(phenylene-vinylene) end-terminated by di-butyl-thiole (tOPV) were thermally deposited in UHV on Ge(111) substrates. The surface potential and the structure of unoccupied electron states (DOUS) located 5–20 eV above the Fermi level (E _F) were monitored during the film deposition using an incident beam of low-energy electrons according to the total current electron spectroscopy (TCS) method. The electronic work function of the surface changed during the film deposition until it reached a stable value of 4.3±0.1 eV at a tOPV film thickness of 8–10 nm. Deposition of the tOPV under 3 nm led to the formation of intermediate DOUS structures that were replaced by another DOUS structure along with an increase in the tOPV deposit thickness up to 8–10 nm. The occurrence of the intermediate DOUS structure is indicative of a substantial reconfiguration of the electronic structure of the tOPV molecules due to the interaction with the Ge(111) surface. Analysis of the TCS data allowed us to assign the unoccupied electronic bands in tOPV located at 5.5–6.5 and 7.5–9.5 eV above the E _F as π* bands and at 11–14 and 16–19 eV above E _F as σ* bands.     

Manifestation of exitonic effects in the magneto-oscillations of the intensity of the recombination radiation of 2D electrons

A study is made of the temperature dependence of the magnetooscillations of the recombination radiation of 2D electrons from the photoexcited size-quantization subband in an isolated GaAs/AlGaAs quantum well. It is shown that at high temperatures (T>10 K) the period of the oscillations is determined by the ratio of the intersubband energy splitting and the sum of the electron and hole cyclotron energies. It is found that as the temperature decreases (T<5 K), a new series of oscillations (with the same period but with a larger phase shift), which are associated with the appearance of excitonic states under the Landau levels, appears. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 10, 719–724 (25 November 1996)