Colossal Magnetoresistive p—n Junctions of Te—Doped LaMnO3／Nb—doped SrTiO3

We have fabricated colossal magnetoresistive (CMR) p-n unctions made of Te-doped LaMnO3 and Nb_dopoed SrTiO3 with laser molecular beam epitaxy.The I-V characteristics of the La 0.9Te0.1MnO3/SrNb 0.01Ti0.99O3p-n junctions as a function of applied magnetic field(0-5T) wrer experimentally studied in the temperature range 77-300K.The results indicate that the p-n junction exhibited the CMR behaviour.The magnetoresistance (MR) is positive at 220K and 300K,while it displays a negative MR at 77K.For a positive bias.the MR ratios (ΔR/R0,ΔR=RH-R0)are 7.5% at 0.1T and 18% at 5T for 300K,5%at 0.1T and 33%at 5T for 220K,for 300K,5.1%at 0.1T and 15%at 3T for 220K-19%at 0.1T and -72% at 5T for 77K,The CMR behaviour of the p-n junction is different from those of the LaMnO3 compound family.     

Quantum interference effects in a multidriven transition Fg=3←→Fe=2

We have theoretically and experimentally studied the quantum coherence effects of a degenerate transition Fg =3←→Fe=2 system interacting with a weak linearly polarized （with σ＋ components） probe light and a strong linearly polarized （with σ＋ components） coupling field. Due to the competition between the drive Rabi frequency and the Zeeman splitting, electromagnetically induced transparency （EIT） and electromagnetically induced absorption （EIA） are present at the different values of applied magnetic field in the case where the Zeeman splitting of excited state Δe is larger than the Zeeman splitting of ground state Δg （i.e.Δe 〉 Δg）.     

Current-Induced Resistive Effect in Cu/MgO/La0.9Sr0.1 MnO3 Trilayers on SrTiO3 （001） Substrates

Cu/MgO/La0.9Sr0.1MnO3 pillars are fabricated on SrTiO3 （001） substrates by the micro-fabrication patterning processes. Their electric transport properties have been measured in the temperature range from the temperature smaller than the Curie one to 300K. At 125K there emerges abrupt breaks of output voltage in voltage-current （Ⅴ-Ⅰ） curves, corresponding to switching in resistance to metastable states, and finally two closed loops are formed with double threshold biases. Around room temperature the Ⅴ-Ⅰ characteristics are non-ohmic and show some gradual hysteresis when sweeping the current in a round-trip scan. A large current-induced resistive change △R/R0, ～-63.2%, is obtained under a current density of 1.0 × 10^4 Acm^-2. Especially, △ R/ R0 depends linearly on the applied current and is independent of the applied magnetic field. The current-induced resistive effect should be of interest for various applications such as switching and field effect devices.     

A polarized micro-Raman study of a 0.65PbMg1/3Nb2/303-0.35PbTi03 single crystal

Polarized micro-Raman spectra of a 0.65PbMg_1/3Nb_2/3O₃-0.35PbTiO₃ （0.65PMN-0.35PT） single crystal poled in the [001] direction are obtained in a wide frequency range （50-2000 cm 1） at different temperatures.The best fit to the Raman spectrum at 77 K is achieved using 17 Lorenzians to convolute into it,and this is proved to be a reasonable fit.According to the group theory and selection rules of overtone and combinational modes,apart from the seven Raman modes that are from first-order Raman scattering,the remaining ones are attributed to being from second-order Raman scattering.A comparison between the experimental results and theoretical predictions shows that they are in satisfactory agreement with each other.Our results indicate that at 77 K the sample belongs to the rhombohedral symmetry with the C 5 3v （R3m） space group （Z=1）.In our study,on heating,the 0.65PMN-0.35PT single crystal undergoes a rhombohedral → tetragonal → cubic phase transition sequence.The two phase transitions occur at 340 and 440 K,which correspond to the disappearance of the soft mode near 106 cm 1 recorded in VV polarization and the vanishing of the band around 780 cm 1 in VH polarization,respectively.     

Photoinduced Resistance Change in an Oxygen-Deficient La 0.9 Sr 0.1 MnO 3-δ Thin Film

Photoinduced resistance change （ △ R/R） in an oxygen-deficient La0.9Sr0.1MnO3-δ thin film is studied. At room temperature, the resistance change of about 30% and response time of about 75 ns are observed under the illumination with a 532nm laser pulse of 7ns and light power of 750mW. It is also found that △ R/R changes with the light power. The phenomena are explained in terms of the photoinduced hole carriers and localized insulator-to-metal transition, which may have potential applications in optoelectronic devices.     

Hopping Conductivity in a Single-Walled Carbon Nanotube Network

We investigate the resistance and magnetoresistance （MR） of an entangled single-walled carbon nanotube （SWNT） network. The temperature dependence of conductance is fitted by formula G（T） = Go exp[-（To/T）^1/2] with To = 15.8 K at a wide temperature range from 4 K to 300K. The MR defined by [R（T, H） - R（T, 0）]/ R（T, 0） as a function of temperature and magnetic field perpendicular to the tube axis is negative at low temperatures. The MR amplitude increases as the temperature decreases at relative high temperature, but becomes decrease when temperature below 4 K. The results are explained in terms of the coherent hopping of carriers in the presence of a Coulomb gap at low temperature.     

Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device

It is still a great challenge for semiconductor based-devices to obtain a large magnetoresistance(MR) effect under a low magnetic field at room temperature. In this paper, the photoinduced MR effects under different intensities of illumination at room temperature are investigated in a semi-insulating gallium arsenide(SI-Ga As)-based Ag/SI–Ga As/Ag device. The device is subjected to the irradiation of light which is supplied by light-emitting diode(LED) lamp beads with a wavelength in a range of about 395 nm–405 nm and the working power of each LED lamp bead is about 33 mW. The photoinduced MR shows no saturation under magnetic fields(B) up to 1 T and the MR sensitivity S(S = MR/B) at low magnetic field(B = 0.001 T) can reach 15 T~(-1). It is found that the recombination of photoinduced electron and hole results in a positive photoinduced MR effect. This work implies that a high photoinduced S under a low magnetic field may be obtained in a non-magnetic semiconductor device with a very low intrinsic carrier concentration.     

Molecular dynamics simulation of surface melting behaviours of the V（110） plane

The modified analytic embedded-atom method and molecular dynamics simulations are applied to the investigation of the surface premelting and melting behaviours of the V（110） plane by calculating the interlayer relaxation, the layer structure factor and atomic snapshots in this paper. The results obtained indicate that the premelting phenomenon occurs on the V（110） surface at about 1800K and then a liquid-like layer, which approximately keeps the same thickness up to 2020K, emerges on it. We discover that the temperature 2020K the V（110） surface starts to melt and is in a completely disordered state at the temperature of 2140K under the melting point for the bulk vanadium.     

Electrical Conductivity and Current--Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires

We report the current-voltage （Ⅰ-Ⅴ） characteristics and electrical conductivity of individual template-synthesized poly（3,4-ethylenedioxythiophene） （PEDOT） nanowires （190 ± 6 nm in diameter and δRT = 11.2 ± 2Ω^-1 cm^-1） over a wide temperature range from 300 to 10K. With lowering temperature, the Ⅰ - Ⅴ characteristics become nonlinear around 50K, and a clear Coulomb gap-like structure appears in the differential conductance （dI/dV） spectra. The temperature dependence of the resistance below 70 K follows In R α T^-1/2, which can be interpreted as Efros-Shklovskii hopping conduction in the presence of a Coulomb gap. In addition, the influences of measurement methods such as the applied bias voltage magnitude, the two-probe and four-probe techniques used in the resistance measurements are also reported and discussed.     

Giant Positive Magnetoresistance in Grain-Oriented CxCo1-x Alloys

The grain-oriented CxGo1-z (x = 0.9, 0.5) samples were fabricated by the hot.pressing method. The microstruc-ture was observed by an x-ray diffractometer and a scanning electron microscope. The resistance against the applied magnetic field was measured by a standard four-polnt probe method at different temperatures. The magnetoresistance and the magnetization ratio were studied as a function of magnetic field in the range of -1800 kA/m-1800 kA /m at different temperatures from 50 K to 300 K. The magnetoresistance of grain-oriented GxGo1-x is positive. The maximum positive MR of 98% at 50 K and 34% at 300 K was obtained under 1800 kA/m magnetic field in the C0.9Go0.1 sample.