磷化物三元混晶中电子-声子相互作用的维度和体积效应

考虑电子-声子耦合强度因维度而异,导出了描述三维、二维和一维混晶中电子-声子相互作用的哈密顿量。考虑构成三元混晶的两种二元晶体的晶格失配会使混晶体积随元素组分比改变,在推导三维、二维和一维三元混晶中极化子自陷能量和重整化有效质量时计入了离子相对位移与二元晶体原胞体积的关系。结果表明:磷化物三元混晶中极化子自陷能量和重整化有效质量随元素组分的变化关系呈明显的非线性特征,对晶格适配明显、电子-声子耦合较强的材料,体积效应不可忽略。维度越低,非线性特征和体积效应越明显。     

电声子相互作用对半导体超晶格动力学局域化的影响

本文用单带模型分别研究了直流外场和交流外场作用下，电声子相互作用对半导体超晶格的动力学局域化性质的影响。结果表明：电声子相互作用会破坏电子的动力学局域化。对同一声子频率，电声子相互作用的强度越大，电子越快被散射；当声子频率等于直流场的布洛赫频率或交流场频率时，初始局域在某一格点的电子被迅速地散射到其他格点上去，亦即光声子共振场会严重破坏电子的动力学局域化性质。     

通过形变势弱耦合表面极化子的重整化质量

采用推广的线性组合算符法和拉格郎 日乘子法研究了晶体中电子与SO声子和SA声子均为弱耦合极化子的重整化质量。结果表明,当电子接近晶体表面时,电子和表面声学声子耦合要比电子与表面光学声子的耦合弱。而且都与Debye截止波数有关;当极化子远离晶体表面时,电子－SO声子相互作用和电子－SA声子相互作用对极化子的重整化质量的影响可以不计,这时电子与体声子的相互作用对极化子重整化质量的贡献是主要的。     

纤锌矿GaN/ZnO 量子阱中的界面声子及其电声相互作用

根据介电连续模型和单轴晶体模型研究了纤锌矿量子阱中的界面声子模及其电声子相互作用的Fröhlich哈密顿。我们计算和讨论了纤锌矿GaN/ZnO单量子阱中的界面声子的色散关系和电声相互作用的耦合强度。色散曲线充分体现了纤锌矿晶体的各向异性;四支界面声子模出现在两个能量区域中,分别是：[ , ]和[ , ]。界面声子模出现消失的现象,光学声子模之间存在能量交迭区域。我们的结果也阐述了纤锌矿GaN/ZnO单量子阱中每支声子模与电子相互作用的对称性和耦合强度。     

一维介观环中持续电流的电子-声子相互作用非经典效应

基于声子相干态功效和计及声子压缩态非经典效应,研究了电子-磁振子和电子-声子相互作用对一维介观环持续电流的影响. 与自由环比较,由于电子-磁振子相互作用,持续电流的振幅呈现指数减小. 对于正常态电子,电子-声子相互作用导致持续电流以Debye-Waller(D-W)因子衰减.但是计入跳步电子-单声子相干态关联效应导致系统本征态能量大幅度下降,从而持续电流I_n有大幅度增加.另一方面计入双声子相干态行为,由于声子压缩态效应压缩电子-相干(态)声子弹性散射行为,导致电子绕环运 关键词： 持续电流 电子-声子相互作用 声子相干态 声子压缩态效应     

有限温度下二维Heisenberg铁磁系统的声子衰减

在二维正方Heisenberg铁磁系统的基础上建立了磁振子-声子相互作用模型. 利用松原格林函数理论研究了系统的声子衰减，计算了布里渊区的主要对称点线上的声子衰减曲线. 发现在第一布里渊区，在Δ线上，横向声频支声子无衰减，在Z线上，纵向声频支声子无衰减；横向声频支声子衰减比纵向声频支声子衰减至少大一个数量级，并讨论了各项参数的变化对横向声频支声子衰减与纵向声频支声子衰减的影响. 根据声子衰减与声子寿命的关系，声子衰减与声子态密度的关系，可以讨论横向声频支声子与纵向声频支声子的寿命与态密度. 关键词： 磁振子-声子相互作用 横向声频支声子衰减 纵向声频支声子衰减 声子寿命     

一维准周期结构声子晶体透射性质的研究

提出了一维准周期结构的声子晶体模型.对弹性波通过该一维准周期结构声子晶体的透射系数进行了数值计算，并与周期结构的透射系数进行了比较.计算结果表明，弹性波通过一维准周期结构声子晶体时，同样会有带隙的出现，且带隙所在频率范围与周期结构的情形完全一样，不同的是在准周期结构声子晶体中，带隙内有很强的局域共振模.对此局域模性质的研究有助于声波或弹性波滤波器的制作. 关键词： 准周期结构 声子晶体 局域化     

一维分子链中激子与声子的相互作用和呼吸子解

运用连续极限近似，求解声子与激子相互作用的运动方程，得到了简谐分子链和 非简谐分子链中晶格振动的孤子解，在考虑三次非简谐势的情况下，一维分子链晶格振动具 有扭结孤子解，在考虑具有四次非简谐势的情况下，得到一维分子链晶格振动具有呼吸子解 . 关键词： 一维分子链 激子 声子 孤子 呼吸子 非线性效应     

巡游电子系统中电子—声子相互作用对磁性激发的影响

从Ｐｅｉｅｒｌｓ－Ｈｕｂｂａｒｄ哈密顿量出发，讨论了电子－声子相互作用对巡游电子系统磁性激发的影响。结果表明，电子－声子相互作用，不仅改变了Ｘ＾－＋（ｑ，ω）的动力学特性，而且在系统能带结构中，使两个自旋子带分裂减小，从而更有利于电子－空穴对的个别激发；另一方面，电－声子相互作用导致自旋波激发出现能隙。     

大弹性常数差二维声子晶体带隙计算中的集中质量法

通过引入振动力学中的连续系统离散化的思想，将一维集中质量法延伸至二维，提出一种二维声子晶体带隙特性计算的集中质量法. 进而采用该算法对两种正方晶格的二维声子晶体的带结构进行了计算，计算结果与传统的平面波展开法相符合. 通过对计算结果以及两种算法收敛性的分析，发现集中质量法的收敛性对组成声子晶体的不同材料弹性参数差不敏感，这使得该算法在计算大弹性常数差二维声子晶体的带隙特性时较平面波展开法收敛速度更快. 此外，集中质量法对二维声子晶体单元形状没有特殊要求，这使得它更加适用于声子晶体带隙特性的计算. 关键词： 声子晶体 声子带隙 集中质量法     

The effect of surface roughness on lattice thermal conductivity of silicon nanowires

A theoretic model is presented to take into account the roughness effects on phonon transport in Si nanowires (NWs). Based on the roughness model, an indirect Monte Carlo (MC) simulation is carried out to predict the lattice thermal conductivities of the NWs with different surface qualities. Through fitting the experimental data with the MC predictions, the scattering strength on phonons from the boundary, umklapp phonon-phonon processes and impurities can be estimated. It is found that the scattering on phonons by the roughness cell boundaries in a rough nanowire can reduce the phonon mean free path to be smaller than the nanowire diameter, the Casimir limit of the phonon mean free path in a flat nanowire for phonons engaged in completely diffused boundary scattering processes.     

Phonon scattering at siliconcrystal surfaces

Our observations of the reflection or backscattering of high-frequency phonons (v =280 GHz to 1 THz) at silicon-solid interfaces disagree significantly with predictions from the acoustic mismatch model. Interfaces composed of materials theoretically wellmatched, show high scattering experimentally. In contrast, interfaces theoretically poorly matched, show less phonon scattering than expected. Generally, this is best expressed by the fact that the interface scattering ranges from roughly 30–60% for different phonon modes with little dependence on the material covering the silicon crystal and different techniques of interface preparations. Thus, our experiments indicate that the well-known Kapitza anomaly of the phonon scattering at solid-liquid helium interfaces is not a special case; the same anomaly appears to be present at all tested interfaces. Our experiments are compared with detailed calculations which either assume pure specular or pure diffusive scattering. In these calculations the influence of the crystal anisotropy for the phonon propagation (phonon focussing) is included. This comparison shows, especially for the free silicon surface, that phonons are completely diffuse scattered. Hence, the acoustic mismatched model relying on specular reflection cannot be applied to the real silicon interface. The frequency dependence of phonon scattering at a free silicon interface indicates the existence of at least two different diffusive scattering mechanisms. Within our experimental limits in these two scattering processes the phonons are elastically scattered.     

The creation of supra-thermal densities of high-energy phonons in He II

We report the new phenomenon that high-energy phonons can be created from low-energy phonons. This arises because the dynamics of phonons in propagating pulses are quite different to those in isotropic phonon distributions. A pulse of low-energy phonons rapidly thermalises by three-phonon processes. On a much longer time scale four-phonon processes occur within this phonon cloud which create high-energy (10 K) phonons that cannot spontaneously decay. These phonons have a lower velocity and so are lost from the back of phonon cloud; their deficit is restored continuously by four-phonon processes. These now isolated high-energy phonons are very stable and propagate ballistically behind the low-energy phonons, so giving the two pulses which are detected in experiments. For long pulses the high-energy phonons may also decay within the cloud, however the available low-energy phonons for scattering are confined to a narrow-angle cone, so the decay probability is very low because the four phonon process requires large angle scattering. A supra-thermal density of these high-energy phonons is predicted.     

Nonadiabatic effects in the lattice dynamics of compressed rare-gas crystals

Electron-ion contributions to the energy of rare-gas crystals are discussed from first principles in the framework of the Tolpygo model and its variants. The frequencies of phonons in a neon crystal at pressures p ≠ 0 are calculated in terms of models that go beyond the scope of the adiabatic approximation. Analysis of the contributions from different interactions to the lattice dynamics of the crystals demonstrates that the phonon frequencies calculated in the framework of the simplest model (allowing only for the nearest neighbors) and the most complex model (with the inclusion of the nearest neighbors, next-nearest neighbors, nonadiabatic effects, etc.) for small wave vectors are close to each other. The difference between the phonon frequencies calculated within the above models is most pronounced at the Brillouin zone boundary. Under strong compression, the phonon spectrum along the Δ direction is distorted and the longitudinal mode is softened as a result of the electron-phonon interaction. The contribution from terms of higher orders in the overlap integral S at p ≠ 0 to the phonon frequencies is more significant than that obtained in the band-structure calculations of the neon crystal.     

Phonon conductivity correction term: Application to P-doped Ge

The role of the characteristic temperature θ¹ (which differentiates peripheral phonons from non-peripheral phonons) in the study of the phonon conductivity correction term due to three phonon normal processes, has been studied for the first time. The study is made for P-doped Ge in the temperature range 1–5 °K for the different values of θ¹ in the range 8–24 °K as an example.     

Three‐Phonon and Four‐Phonon Interaction Processes in a Pair‐Condensed Fermi Gas

We study the interactions among phonons and the phonon lifetime in a pair‐condensed Fermi gas in the BEC‐BCS crossover in the collisionless regime. To compute the phonon‐phonon coupling amplitudes we use a microscopic model based on a generalized BCS Ansatz including moving pairs, which allows for a systematic expansion around the mean field BCS approximation of the ground state. We show that the quantum hydrodynamic expression of the amplitudes obtained by Landau and Khalatnikov apply only on the energy shell, that is for resonant processes that conserve energy. The microscopic model yields the same excitation spectrum as the Random Phase Approximation, with a linear (phononic) start and a concavity at low wave number that changes from upwards to downwards in the BEC‐BCS crossover. When the concavity of the dispersion relation is upwards at low wave number, the leading damping mechanism at low temperature is the Beliaev‐Landau process 2 phonons ? 1 phonon while, when the concavity is downwards, it is the Landau‐Khalatnikov process 2 phonons ? 2 phonons. In both cases, by rescaling the wave vectors to absorb the dependence on the interaction strength, we obtain a universal formula for the damping rate. This universal formula corrects and extends the original analytic results of Landau and Khalatnikov [ZhETF 19 , 637 (1949)] for the 2?2 processes in the downward concavity case. In the upward concavity case, for the Beliaev 1? 2 process for the unitary gas at zero temperature, we calculate the damping rate of an excitation with wave number q including the first correction proportional to q ⁷ to the q ⁵ hydrodynamic prediction, which was never done before in a systematic way.     

Dispersive effects and correction term in two-mode phonon conduction model for Ge

A complete analysis of the phonon conductivity κ, still lacking in the literature, is presented in the two-mode conduction model for Germanium. First a method is derived from which the correction term κ_c of the Callaway model is separated into its longitudinal and transverse parts and then the effects of strong phonon dispersion and the role of longitudinal and transverse phonons on κ_c are studied. For this purpose we have also proposed some new empirical expressions for the three phonon relaxation rates τ_3ph⁻¹'s which are valid in the entire temperature range. This improvised model, when applied simultaneously to the phonon conductivity data of both normal and enriched Ge, yields some new results. These are (i) κ_c neglected by the earlier workers in the two-mode phonon conduction model, gives a substantial contribution beyond the conductivity maximum and (ii) the longitudinal phonons are the major carriers of heat at high temperature.     

Ternary mixed crystal effects on interface optical phonon and electron-phonon coupling in zinc-blende GaN/AlxGa1−xN spherical quantum dots

The theoretical investigations of the interface optical phonons, electron–phonon couplings and its ternary mixed effects in zinc-blende spherical quantum dots are obtained by using the dielectric continuum model and modified random-element isodisplacement model. The features of dispersion curves, electron–phonon coupling strengths, and its ternary mixed effects for interface optical phonons in a single zinc-blende GaN/Al_xGa_1−xN spherical quantum dot are calculated and discussed in detail. The numerical results show that there are three branches of interface optical phonons. One branch exists in low frequency region; another two branches exist in high frequency region. The interface optical phonons with small quantum number l have more important contributions to the electron–phonon interactions. It is also found that ternary mixed effects have important influences on the interface optical phonon properties in a single zinc-blende GaN/Al_xGa_1−xN quantum dot. With the increase of Al component, the interface optical phonon frequencies appear linear changes, and the electron–phonon coupling strengths appear non-linear changes in high frequency region. But in low frequency region, the frequencies appear non-linear changes, and the electron–phonon coupling strengths appear linear changes.     

The effect of normal phonon-phonon scattering processes on the maximum thermal conductivity of isotopically pure silicon crystals

The effect of normal phonon-phonon scattering processes on the thermal conductivity of silicon crystals with various degrees of isotope disorder is considered. The redistribution of phonon momentum in normal scattering processes is taken into account within each oscillation branch (the Callaway generalized model), as well as between different oscillation branches of the phonon spectrum (the Herring mechanism). The values of the parameters are obtained that determine the phonon momentum relaxation in anharmonic scattering processes. The contributions of the drift motion of longitudinal and transverse phonons to the thermal conductivity are analyzed. It is shown that the momentum redistribution between longitudinal and transverse phonons in the Herring relaxation model represents an efficient mechanism that limits the maximum thermal conductivity in isotopically pure silicon crystals. The dependence of the maximum thermal conductivity on the degree of isotope disorder is calculated. The maximum thermal conductivity of isotopically pure silicon crystals is estimated for two variants of phonon momentum relaxation in normal phonon-phonon scattering processes.