从原子到超原子的原子层次新机遇

为何超原子如此重要？从发展过程来体会，是因为终于可以把纷繁复杂的团簇结构以量子力学属性实现物理规律把握，从而为以团簇作为基元的物性表征与调控包括相关的制造和功能应用提供了基于原子层次的抓手. 因此可以认为，由团簇科技发展到超原子的物理学研究是必然的，所以，我们提出了超原子物理学的概念和范畴. 超原子作为归属于分子的多原子复杂系统，它的电子结构与原子有相近性，凸显了超原子系统中相互作用有深刻且丰富的物理内涵. 依托于原子物理学的巨大成就，将原子层次的科技能力结合到超原子研究上，将开辟新的领域方向，促进从结构出发的传统研究思路转变到以功能为核心的研究范式，从而带来新的发展机遇.     

超冷原子物理学与原子光学

最近十多年来 ,一个新的领域———超冷原子物理学蓬勃地发展起来 .所谓“超冷” ,是指原子作为整体的平动速度极低 ,对应温度低于1ｍＫ( 1 0 -3Ｋ) .如此低温度下的原子体系 ,体现若干新的现象 ,遵从新的物理规律 .其中特别有意义的是原子气体玻色 爱因斯坦凝聚(ＢＥＣ)现象 ,2 0 0 1年的诺贝尔物理学奖就是授予在ＢＥＣ实验实现和性质研究方面做出重要贡献的Ｅ .Ａ .Ｃｏｒｎｅｌｌ,Ｗ .Ｋｅｔｔｅｒｌｅ和Ｃ .Ｅ .Ｗｉｅｍａｎ三位物理学家的 .超冷原子体系技术上能实现 ,有赖于发展于 2 0世纪 80年代的激光冷却和捕陷中性原子的方法 .鉴…     

一套实用的铯原子喷泉光学系统的设计及建立

介绍了实现铯原子喷泉的过程及条件,并详细讨论了光路中各种光学元件对铯原子喷泉光学系统性能的影响。在对各种光学元件性能综合考虑的基础上,设计并建立了一套用于进行激光冷却和上抛的铯原子喷泉的光学系统,使光强控制、失谐调整、光束开关、光束质量等多种参量的控制达到了技术要求。在此基础上,实现了铯原子磁光阱,为实现铯原子喷泉奠定了基础。     

原子混合态在光谱学中的一种应用

本文介绍了一种利用原子在外场作用下微小分裂能态的混合以研究原子内部微小相互作用的光谱学方法，文中详细描述了实验方法，理论依据，适用范围以及实验结果和讨论，这在光谱学的研究中具有重要实际意义。     

Analytic Solutions of Three-Level Dressed-Atom Model

On the basis of the dressed-atom model, the general analytic expressions for the eigenenergies, eigenstates and their optical potentials of the A-configuration three-level atom system are derived and analysed. From the calculation of dipole matrix element of different dressed states, we obtain the spontaneous-emission rates in the dressed-atom picture. We find that our general expressions of optical potentials for the three-level dressed atom can be reduced to the same as ones in previous references under the approximation of a small saturation parameter. We also analyse the dependences of the optical potentials of a three-level ^85Rb atom on the laser detuning and the dependences of spontaneous-emission rates on the radial position in the dark hollow beam, and discuss the probability (population) evolutions of dressed-atomic eigenstates in three levels in the hollow beam.     

原子光学讲座第一讲几何与波动原子光学及其器件

文章首先简单介绍了冷原子操纵与控制的基本原理。然后，重点介绍了几何与波动原子光学及其器件的研究内容、潜在应用和最新进展，其中包括：原子束的反射和原子反射镜；原子束偏转（折射）、聚焦成像和原子透镜；原子衍射和原子光栅；原子干涉和原子干涉仪；原子全息学及其技术等。     

电热原子吸收光谱法中原子形成机理的热力学和动力学研究

本文对电热原子吸收光谱法（ＥＴＡＡＳ）中气态原子形成机理的热力学和动力学研究状况进行了评述，引用文献６２篇。     

Influence of atomic motion on the population and dipole squeezing of a cascade three-level atom in cavity field

The dynamical property of a cascade three-level atom is investigated in the condition of atomic motion. The influence of atomic motion on the population and dipole squeezing is discussed. The results show that atomic motion makes the amplitude of atomic population be steady and increasing the parameter εp which denotes the atomic motion and the structure of field mode can shorten the period of collapse－revivals. By choosing an appropriate parameter εp, we can obtain a dipole squeezed atom of long standing.     

The periodic magnetic cylinder tube for atom guidance： transport efficiency analysis

We have proposed a model of periodic axial magnetized hollow tube for atom guidance (1999 Opt. Commun. 160 72-4). In the present paper, an analytic solution of the magnetic field inside the tube is obtained and the transport efficiency of the cold atoms in the magnetic tube at different tube intensities of magnetization is discussed. The effect of the curvature of magnetic tube on the atom transport efficiency is also considered. We have found that the tube has a cooling effect on the transverse temperature of the transported atoms.     

ICP-AES法测定金属硅中的Al、B、Ba、Ca、Cr、Cu、 Fe、Mg、Mn、Ni、Sr、Ti、V和Zn杂质元素

本文提供了一种测定金属硅中Ｂ,Ｆｅ,Ａｌ,Ｃａ,Ｍｎ等１４个杂质元素的ＩＣＰ－ＡＥＳ方法,在样品处理过程中,加入适量体积的甘露醇能够抑制Ｂ的挥发。用本方法测定了一个国家地球化学标准样（ＧＳＲ－４）,结果令人满意。     

发射光谱法测定高纯银中微量金、铂、钯、铑、铱、锑、铅、铋、铁、铜、镍、铬、铝和锌

本文研究了贵金属标准溶液除氯离子的有关问题，解决了高纯硝酸银中贵金属等杂质元素的标样配制，以硝酸银直接压样于普通电极中直流电弧激发，可测定９９．０～９９．９９％的高纯银，该方法简便、快速、准确。     

ICP-AES法直接测定锡锭中的As、Al、Bi、Cd、Cu、Fe、Pb、Se、Sb、Zn

以电荷耦合器件为检测器的全谱直读等离子体光谱仪直接测定锡锭中As、Al、Bi、Cd、Cu、Fe、Pb、Se、Sb、Zn十种杂质元素的含量.该方法简便、快速且具有比化学法更低的检出限,加标回收试验结果表明,回收率为92%-105%,RSD均小于1.5%.     

纯硒中杂质元素的ICP-AES测定

电感耦合等离子体-原子发射光谱同时测定纯硒中的碲、铅、铋、锑、铜、铁、镍、铝、锡、砷和硼12种元素的含量,优化出各元素的分析波长和分析条件;用基体匹配补偿基体效应,方法简单,快速可靠,样品回收率为94%-107%.     

BN,AlN, GaN,InN: Charge Neutrality Level,Surface, Interfaces,Doping

Russian Physics Journal - On the basis of the charge neutrality concept, the analysis is fulfilled of the experimental data on the electron properties of the defective semiconductors after the...     

ICP—AES法直接测定锡锭中的As,A1,Bi,Cd,Cu,Fe,Pb,Se,Sb,Zn

以电荷耦合器件为检测器的全谱直读等离子体光谱仪直接测定锡锭中Ａｓ、Ａ１、Ｂｉ、Ｃｄ、Ｃｕ、Ｆｅｄ、Ｐｂ、Ｓｅ、Ｓｂ、Ｚｎ十种杂质元素的含量。该方法简便、快速且具有比化学法更低的检出限,加标回收试验结果不明,回收率为９２％－１０５％,ＲＳＤ均小于１．５％。     

Solution absorption and luminescence studies of tetraphenylboron, -carbon, -silicon, -germanium, -tin, -lead, -phosphorus, -arsenic,and -antimony

The lowest absorption band of the tetraphenyl compounds resembles that of the lowest absorption band of benzene with the following difference. In benzene the electronic origin is strictly forbidden, and all intensity is associated with a symmetric progression built on one mode of asymmetric vibration. In the tetraphenyl compounds the intensity associated with the asymmetric vibration is relatively unaffected; however, there is increasing intensity associated with the electronic origin and a symmetric progression built on it along the series

$\text{φ}{}_4\text{Pb}\text{< φ}{}_4\text{Sn}\text{< φ}{}_4\text{Ge}\text{< φ}{}_4\text{Si}\text{< φ}{}_4\text{C}\text{? φ}{}_4\text{B}{}^{\mathrm{?}}\text{< φ}{}_4\text{Sb}{}^{\mathrm{+}}\text{< φ}{}_4\text{As}{}^{\mathrm{+}}\text{< φ}{}_4\text{P}{}^{\mathrm{+}}$

. For the cations it is the electronic origin and the progression built on it that are the primary source of intensity. This effect is attributed to an inductive perturbation. A similar effect is observed in the fluorescence spectrum. In phosphorescence, the relative enhancement of the electronic origin and the progression built on it is far less marked. The phosphorescence emission of φ₄Pb and φ₄Sb⁺ are red shifted from the others by ～0.5 eV, an effect attributed to formation of a triplet excimer. Increasing spin-orbit coupling in the triplet due to a heavy atom effect can be seen in the decreasing phosphorescence lifetime (range 4 sec to 4 msec) and decreasing ratio of $\text{φ}{}_{\mathrm{f}}\text{φ}{}_{\mathrm{p}}$ (fluorescence to phosphorescence quantum yields) in the order

$\text{φ}{}_4\text{C}\text{> φ}{}_4\text{B}\text{> φ}{}_4\text{Si}\text{> φ}{}_4\text{P}{}^{\mathrm{+}}\text{> φ}{}_4\text{Ge}\text{> φ}{}_4\text{As}{}^{\mathrm{+}}\text{> φ}{}_4\text{Sn}$

In all cases nonexponential decay of phosphorescence is observed.