Theoretical investigations of half-metallic ferromagnetism in new Half-Heusler YCrSb and YMnSb alloys using first-principle calculations

Structural,electronic,and magnetic properties of new predicted half-Heusler YCrSb and YMnSb compounds within the ordered MgAgAs Clb-type structure are investigated by employing first-principal calculations based on density functional theory.Through the calculated total energies of three possible atomic placements,we find the most stable structures regarding YCrSb and YMnSb materials,where Y,Cr(Mn),and Sb atoms occupy the(0.5,0.5,0.5),(0.25,0.25,0.25),and(0,0,0) positions,respectively.Furthermore,structural properties are explored for the non-magnetic and ferromagnetic and anti-ferromagnetic states and it is found that both materials prefer ferromagnetic states.The electronic band structure shows that YCrSb has a direct band gap of 0.78 eV while YMnSb has an indirect band gap of 0.40 eV in the majority spin channel.Our findings show that YCrSb and YMnSb materials exhibit half-metallic characteristics at their optimized lattice constants of 6.67  and 6.56 ,respectively.The half-metallicities associated with YCrSb and YMnSb are found to be robust under large in-plane strains which make them potential contenders for spintronic applications.     

Lattice structures and electronic properties of CIGS/CdS interface:First-principles calculations

Using first-principles calculations within density functional theory, we study the atomic structures and electronic properties of the perfect and defective （2VCu＋ Incu） CulnGaSe2/CdS interfaces theoretically, especially the interface states. We find that the local lattice structure of （2VCu＋ InCu） interface is somewhat disorganized. By analyzing the local density of states projected on several atomic layers of the two interfaces models, we find that for the （2VCu＋InCu） interface the interface states near the Fermi level in CulnGaSe2 and CdS band gap regions are mainly composed of interracial Se-4p, Cu-3d and S-3p orbitals, while for the perfect interface there are no clear interface states in the CulnGaSe2 region but only some interface states which are mainly composed of S-3p orbitals in the valance band of CdS region.     

Theoretical optoelectronic analysis of intermediate-band photovoltaic material based on ZnY1-xOx （Y = S,Se, Te） semiconductors by first-principles calculations

The structural, energetic, and electronic properties of lattice highly mismatched ZnY1-xOx （Y = S, Se, Te） ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY （Y = S, Se, Te） at octahedral sites in a semiconductor by the calculations of density of states （DOS）, leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands （IBs） in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO.     

Mechanism of Visible Photoactivity of F-Doped TiO2

We calculate the electronic structure and optical properties of F-doped anatase TiO2. The results indicate that the band gap ofF-doped TiO2 increases slightly compared with the pure TiO2. However, it is interesting that the visible absorption of F-doped TiO2 located between 600 and 700 nm is observed, and it enhances gradually with the increasing F concentration. Furthermore, according to the results of densities of states and imaginary part of dielectric function ε2（ω）, we propose that the transition between Ti 3d and Ti 3d states may be responsible for the visible absorption, but not the band gap narrowing.     

First Principles Study on Electronic Structure of PbFe0.5Nb0.5O3

The full potential linearized augmented plane wave (FLAPW) method is used to study the crystal structure and electronic structure properties of PbFeo.5 Nbo.5O3 (PFN). The optimized crystal structure, density of states, band structure and electron density distribution have been obtained to understand the ferroelectric behaviour of PFN.The analysis result of the density of states shows there is an obvious change of Nbd states in the paraelectric-to-ferroelectric phase transition. The polarization result shows that the contribution to ferroelectricity of Nb atoms is larger than that of Fe atoms. In ferroelectric phase there is a hybridization of Fed-Op and Nbd-Opin ferroelectric PFN. This is consistent with the result of the electronic band structure. This hybridization is responsible for the tendency to its ferroelectricity.     

Ab Initio Calculations for the BaTiO3 （001） Surface Structure

The ab initio method within the local density approximation is applied to calculate cubic BaTiO3 (001) surface relaxation and rumpling for two different terminations (BaO and TiO2 ). Our calculations demonstrate that cubic perovskite BaTiO3 crystals possess surface polarization, accompanied by the presence of the relevant electric field. We analyse their electronic structures (band structure, density of states and the electronic density redistribution with emphasis on the covalency effects). The results are also compared with that of the previous ab initio calculations. Considerable increases of Ti-O chemical bond covalency nearby the surface have been observed. The band gap reduces especially for the TiO2 termination.     

Bulk Modulus and Electronic Band Structure of ZnGa2Xa （X=S,Se）： a First-Principles Study

First-principles local density functional calculations are presented for the compounds ZnGa2X4 （X = S, Se）. We investigate the bulk moduli and electronic band structures in a defect chalcopyrite structure. The lattice constants and internal parameters are optimized. The electronic structures are analysed with the help of total and partial density of states. The relation between the cohesive energy and the unit cell volume is obtained by fully relaxed structures. We derive the bulk modulus of ZnGa2Xa by fitting the Birch-Murnaghan＇s equation of state. The extended Cohen＇s empirical formula agrees well with our ab initio results.     

Investigations of the half-metallic behavior and the magnetic and thermodynamic properties of half-Heusler CoMnTe and RuMnTe compounds: A first-principles study

First-principles spin-polarized density functional theory （DFT） investigations of the structural, electronic, magnetic, and thermodynamics characteristics of the half-Heusler, CoMnTe and RuMnTe compounds are carried out. Calculations are accomplished within a state of the art full-potential （FP） linearized （L） augmented plane wave plus a local orbital （APW ＋ lo） computational approach framed within DFT. The generalized gradient approximation （GGA） parameterized by Perdew, Burke, and Ernzerhof （PBE） is implemented as an exchange correlation functional as a part of the total energy calculation. From the analysis of the calculated electronic band structure as well as the density of states for both compounds, a strong hybridization between d states of the higher valent transition metal （TM） atoms （Co, Ru） and lower valent TM atoms of （Mn） is observed. Furthermore, total and partial density of states （PDOS） of the ground state and the results of spin magnetic moments reveal that these compounds are both stable and ideal half-metallic ferromagnetic. The effects of the unit cell volume on the magnetic properties and half-metaliicity are crucial. It is worth noting that our computed results of the total spin magnetic moments, for CoMnTe equal to 4 ~tB and 3 p-B per unit cell for RuMnTe, nicely follow the rule μ2tot = Zt - 18. Using the quasi-harmonic Debye model, which considers the phononic effects, the effecs of pressure P and temperature T on the lattice parameter, bulk modulus, thermal expansion coefficient, Debye temperature, and heat capacity for these compounds are investigated for the first time.     

Electronic structure of twinned ZnS nanowire

The electronic properties of twinned ZnS nanowires （NWs） with different diameters were investigated based on first-principles calculations. The energy band structures, projected density of states and the spatial distributions of the bottom of conduction band and the top of the valence band were presented. The results show that the twinned nanowires exhibit a semiconducting character and the band gap decreases with increasing nanowire diameter due to quantum confinement effects. The valence band maximum and conduction band minimum originate mainly from the S-p and Zn-s orbitals at the core of the nanowires, respectively, which was confirmed by their spatial charge density distribution. We also found that no heterostructure is formed in the twinned ZnS NWs since the valence band maximum and conduction band minimum states are distributed along the NW axis uniformly. We suggest that the hexagonal （2H） stacking inside the cubic （3C） stacking has no effect on the electronic properties of thin ZnS NWs.     

Electronic Structures of the Filled Tetrahedral Semiconductor LiMgN with a Zincblende—Type Structure

An ab initio method with mixed-basis norm-conserving non-local pseudo-potentials has been employed to investigate the electronic structures of LiMgN.The band structure ,electronic density of states and charge density contour plot of LiMgN are also presented.By the calculation,we have found that LiMgN with a zincblende-type structure was an indirect gap semiconductor,and the value of indirect(Γ-X) energy band gap under the local density approximation was 2.97eV.In addition,the strong covalent charcter for Li-N and Mg-N has also been found in LiMgN.     

Accurate One-Centre Method for Hydrogen Molecule Ions in Strong Magnetic Field

An accurate one-centre method for the hydrogen molecule ion is tested. The slow convergence and singularities at the nuclear positions that are problems in the general one-centre method axe solved well by employing the optimal radial and angular B-spline basis. Therefore, the accuracy of the one-centre method is improved observably. For the ground state of the H2^＋ in the free field, 7 ×10^-8 accuracy is obtained, which rivals the best one-centre calculation before. As a test, the nuclear distances and the total energies of the 1σ g,u, 1πu, 1δ9,u and 2σg states of the H2^＋ for the magnetic field strength B = 1 a.u. are also obtained. Compared to other results, five-digit accuracy at least can be arrived even for the antibonding states 1σu and 1σu, whose equilibrium distances R is very large.     

Application of Complete Orthonormal Sets of Ψα-Exponential-Type Orbitals to Accurate Ground and Excited States Calculations of One-Electron Diatomic Molecules Using Single-Zeta Approximation

The applicability of the complete orthonormal sets of ψ^a-exponential-type orbitals introduced by one of the authors to the study of electronic structure of one electron diatomic molecules is demonstrated using single-zeta approximation. As an example of application, tile calculations have been performed for o, 7r and 5 states of one electron homo- and hetero-nucleac diatomic molecules H＋2 and Hell2＋, respectively. The calculation results are presented. The values for these molecules obtained in eight-digit accuracy ace close to the results of solution presented in literature.     

Theory of complete orthonormal sets of relativistic tensor wave functions and Slater tensor orbitals of particles with arbitrary spin in position, momentum and four-dimensional spaces

Using the complete orthonormal basis sets of nonrelativistic and quasirelativistic orbitals introduced by the author in previous papers for particles with arbitrary spin the new analytical relations for the 2(2s+1)-component relativistic tensor wave functions and Slater tensor orbitals in position, momentum and four-dimensional spaces are derived, where s=1/2,1,3/2,2,… . The relativistic tensor function sets are expressed through the corresponding nonrelativistic and quasirelativistic orbitals. The analytical formulas for overlap integrals over relativistic Slater tensor orbitals in position space are also derived.     

Electronic structure and driving forces in α-cyclodextrin:butylparaben inclusion complexes

We investigate the geometry and electronic structure for complexes of α-cyclodextrin with butylparaben using DFT and Hartree-Fock calculations. The effect of solvent is explicitly taken into account. A Morokuma-Kiatura analysis of the bond energy is performed. We emphasize the role of the water, by pointing out the changes in the solvent's electronic structure for different docking geometries.     

Electron density and Fisher information of Dirac-Fock atoms

Numerical calculations on the gradient and Laplacian forms of the position space Fisher information measure are reported using the 1-normalised Dirac-Fock densities (shape function), σ(r), for atoms H-Lr. It is shown that the difference in effective electrostatic potentials, corresponding to the gradient and the Laplacian form of Fishers' information, is completely defined by the shape function (the density per particle) at the nucleus, σ(r=0). The influence of relativistic effects on the Fisher information is recovered for the first time.     

Hydrodynamical approach to collective oscillations in metal clusters

In this Letter we present a hydrodynamical approach within the realm of time dependent density functional theory which is based on the particle and the current densities to calculate the excited state energies of many-electron systems. The applicability of the approach is demonstrated by calculating the collective oscillation frequencies of sodium clusters of various sizes within the spherical jellium background model.     

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi： Initial Surface Reaction Pathways with H/GeSi（100）-2 × 1

The reaction mechanisms of Al（CH3 ）3 （TMA） adsorption on H-passivated GeSi（100）-2 × 1 surface are investigated with density functional theory. The Si-Ge and Ge-Ge one-dimer cluster models are employed to represent the GeSi（100）-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si-H^＊ and Ge-H^＊ sites is considered. The activation barrier of TMA with the Si-H^＊ site （1.2eV） is higher than that of TMA with the Ge-H^＊ site （0.91 eV）, which indicates that the reaction proceeds more slowly on the Si-H^＊ site than on the Ge-H^＊ site. In addition, adsorption of TMA is more energetically favorable on the Ge-Ge dimer than on the Si-Ge dimer of H-passivated SiGe.     

Density functional theory investigation of S2 in KCl: evidence for the existence of a di-vacancy site

Electron paramagnetic resonance experiments have shown that, depending on the doping procedure, two different S₂⁻ centers may coexist in KCl. These centers have the ²B_2g and the ²B_3g ground state, respectively. As no experimental ligand hyperfine data are available, it could not be determined whether the S₂⁻ molecular ion replaces a single halide ion (mono-vacancy site) or two nearest neighbor halide ions (di-vacancy site). Also, other defect models could a priory be considered. In this work, cluster in vacuo density functional theory calculations of the g and ³³S hyperfine tensors show that the S₂⁻ ion at a mono-vacancy site has the ²B_2g ground state, whereas S₂⁻ in a di-vacancy exhibits a ²B_3g ground state. For the latter center, the possibility of charge compensation by a cation vacancy is also considered. The calculations indicate that a possible vacancy is not in the direct vicinity (nearest or next-nearest neighbor) of the S₂⁻ ion.     

Molecular Dynamics Simulation of Bubble Nucleation in Explosive Boiling

Molecular dynamics （MD） simulation is carried out for the bubble nucleation of liquid nitrogen in explosive boiling. The heat is transferred into the simulation system by rescaling the velocity of the molecules. The results indicate that the initial equilibrium temperature of liquid and molecular cluster size affect the energy conversion in the process of bubble nucleation. The potential energy of the system violently varies at the beginning of the bubble nucleation, and then varies around a fixed value. At the end of bubble nucleation, the potential energy of the system slowly increases. In the bubble nucleation of explosive boiling, the lower the initial equilibrium temperature, the larger the size of the molecular cluster, and the more the heat transferred into the system of the simulation cell, causing the increase potential energy in a larger range.     

One-Range Addition Theorems in Terms of ψ^α -ETOs for STOs and Coulomb-Yukawa Like Correlated Interaction Potentials of Integer and Noninteger Indices

The expansion formulas in terms of complete orthonormal sets of ψ^α -exponential type orbitals are established for the Slater type orbitals and Coulomb-Yukawa-like correlated interaction potentials of integer and noninteger indices. These relations are used in obtaining their unsymmetrical and symmetrical one-range addition theorems. The final results are especially useful in the calculations of multicentre multielectron integrals occurring when Hartree-Fock-Roothaan and explicitly correlated methods are employed.