绝缘层方势垒影响下N-I-d波超导体结的隧道谱

以方势垒描述N-I-d波超导体结中绝缘层对准粒子输运的影响,通过求解Bogoliubov-de Gennes(BdG)方程,利用Blonder-Tinkham-Klapwijk(BTK)理论,计算了N-I-d波超导体结的隧道谱.研究表明:(1)绝缘层厚度在不同纳米量级下的隧道谱形状各异,即便其厚度处在同一纳米量级上,彼此间仅相差零点几个纳米,电会导致微分电导随偏压的变化关系迥异,这为解释高Tc氧化物超导体的相关实验现象提供了更多的可能性;(2)粒子的入射角和绝缘层的势垒值对零偏压电导峰有显著影响.     

正常金属-绝缘层-铁磁/超导结微分电导峰的Zeeman劈裂

通过求解Bogoliubov-de Gennes(BdG)方程，利用推广的Blonder-Tinkham-Klapwijk(BTK)理 论，计算了考虑结界面粗糙散射情况下正常金属-绝缘层-铁磁超导结（N/I/FS）的微分电导 .研究表明，铁磁超导态中的磁交换能E_h能使微分电导峰产生Zeeman劈裂， 劈裂峰的 能量间隔为2E_h，结界面势垒散射和结界面粗糙散射降低了隧道结的微分电导峰 值. 关键词： N/I/FS超导结 铁磁超导共存态 微分电导 Zeeman劈裂     

绝缘层方势垒影响下N/I/自旋三重态p波超导体结的隧道谱

以方势垒描述正常金属/绝缘层/自旋三重态p波超导结中绝缘层对准粒子输运的影响,通过求解Bogoliubov-de Gennes(BdG)方程,利用Blonder-Tinkham-Klapwijk(BTK)理论,计算了p波超导结的隧道谱.研究表明:(1)绝缘层厚度的增加,可导致自旋三重态p波超导结隧道谱中出现亚能隙共振峰...     

d(x2-y2)+idxy混合波正常金属/绝缘层/超导体结中的隧道谱

考虑界面粗糙散射,在Blonder-Tinkham-Klapwijk(BTK)理论框架下,通过求解Bogoliubov-de-Gennes(BdG)方程,分别计算T=0K和有限温度下,d_(x²-y²)+id_xy混合波正常金属绝缘层超导体结中的准粒子输运系数和隧道谱.研究表明:隧道谱中的电导峰的劈裂程度强烈地依赖于d_xy波分量的强度、超导体的晶轴方位和界面粗糙强度,而温度的升高能压低电导峰. 关键词： NIS结 (x²-y²)+id_xy混合波超导体')" href="#">d_(x²-y²)+id_xy混合波超导体 隧道谱     

正常金属/超导/正常金属双垒隧道结中的量子相干输运

考虑到量子相干效应和界面散射效应 ,利用 L ambert理论模型 ,计算正常金属 /绝缘层 /超导 /绝缘层 /正常金属双垒隧道结中的准粒子输运系数和隧道谱。研究表明 :( 1)所有的准粒子输运系数和电导谱在超导能隙之上都随能量作周期性振荡 ,其振荡周期依赖于超导层的厚度 ;( 2 )在超导能隙之上 Andreev反射系数随能量呈现周期性消失现象 ;( 3)在绝缘层势垒强度取很大的隧道极限下 ,超导层中会形成一系列的准粒子束缚态 ,其位置由量子化条件决定 ;( 4)界面散射效应不仅能压低各子能隙电导峰 ,还能使子能隙电导峰劈裂为两个峰。     

金属-绝缘层-铁磁/超导结的隧道谱与散粒噪声

通过求解Bogoliubov-de Gennes(BdG)方程,利用推广的Blonder-Tinkham-Klapwijk(BTK)的理论,计算了金属-绝缘层-铁磁／超导态(N／L／FS)结的微分电导、平均电流和散粒噪声功率．研究表明：铁磁超导态中的磁交换能能使微分电导峰产生Zeeman劈裂,劈裂峰的能量问隔为2Eh,结界面势垒散射抑制隧道结的微分电导、平均电流和散粒噪声功率．     

量子线/绝缘层/p波超导体结的隧道谱

用Bogoliubov-de Gennes方程来研究量子线/绝缘层/p波超导体结(q/I/p)中的准粒子输运过程，利用推广的Blonder，Tinkham和Klapwijk模型计算绝对零度和有限温度下q/I/p的一级谐波隧道谱.和量子线/绝缘层/d波超导体结的一级谐波隧道谱不同的是q/I/p的一级谐波隧道谱中存在零偏压电导峰.随着q/I/p中绝缘层的势垒散射增强，q/I/p的一级谐波隧道谱中零偏压电导峰变高.     

N/I/d波超导体结中的准粒子非弹性散射效应

考虑准粒子的非弹性散射和正常金属区域的杂质散射,以方势垒描述N/I/d波超导体结中绝缘层对准粒子输运的影响,运用Bogoliubov-de Gennes(Bde)方程和Blonder-Tinkham-Klapwijk(BTK)理论,计算了N/I/d波超导体结的隧道谱.研究表明;(1)伴随着准粒子的非弹性散射效应,绝缘层的势垒值及绝缘层厚度对零偏压电导峰值有显著影响;(2)准粒子有限寿命的缩短,可压低零偏压电导峰,并抹平能隙处的小峰或凹陷;(3)较大的杂质散射会导致零偏压电导峰的劈裂,而准粒子的非弹性散射则可有效地阻止其劈裂.     

铁磁绝缘层对正常金属/铁磁绝缘层/正常金属/p波超导结隧道谱的影响

在正常金属/铁磁绝缘层/正常金属/自旋三重态p波超导隧道结中,考虑到铁磁绝缘层的磁散射和粗糙界面散射,运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论模型,研究了铁磁绝缘层对隧道结微分电导的影响.研究表明:(1)对于px波,粗糙界面散射和磁散射都能使零偏压电导峰变低,能隙处凹陷升高;随着磁散射的增强,谱线的尖锐峰消失,宽峰逐渐变为凹陷;(2)对于py波,粗糙界面散射和磁散射都能使零能凹陷上移,能隙峰变低,随着粗糙界面散射的增强,两能隙峰间距减小;随着中间正常金属层厚度的增加,能隙内电导随外加偏压呈现振荡行为,能隙外电导仅与普通势垒有关;(3)对于px+ipy波,随着粗糙界面散射的增强,零偏压电导峰被压低,双凹陷处的值逐渐增大为小的能隙峰,而磁散射并不改变谱线中各凹陷处的电导值.     

N/I/d波超导体c轴隧道结的微分电导

以方势垒描述绝缘层,对N/I/d波超导体c轴隧道结的微分电导进行了研究.结果表明:在N/I/d波超导体c轴隧道结的隧道谱中存在V型结构、能隙外的凹陷和小的零偏压电导峰.这一结果能很好的解释相关的实验现象.     

Coherent quantum transport in two-dimensional electron gas/superconductor double junctions with Rashba spin-orbit coupling

Based on the extended Blonder-Tinkham-Klapwijk (BTK) approach, we have investigated the coherent quantum transport in two-dimensional electron gas/superconductor (2DEG/SC) double tunneling junctions in the presence of the Rashba spin-orbit coupling (RSOC). It is found that all the reflection coefficients in BTK theory as well as conductance spectra oscillate with the external voltage and energy. The oscillation feature of conductance can be tuned largely by the RSOC for low insulating barriers, while for high insulating barriers it is almost independent of the RSOC. These phenomena are essentially different from those found in ferromagnet/superconductor double tunneling junctions.     

多层结构双自旋过滤隧道结中的电子输运特性

在转移矩阵方法及Mireles和Kirczenow的量子相干输运理论的基础上,研究了正常金属层/磁性半导体层/非磁绝缘层/磁性半导体层/正常金属层型双自旋过滤隧道结中Rashba自旋轨道耦合效应和自旋过滤效应对自旋相关输运的影响.讨论了隧穿磁电阻（TMR）、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系.研究表明：含磁性半导体层的双自旋过滤隧道结由于磁性半导体层的自旋过滤效应和Rashba自旋轨道耦合作用可获得极大的TMR值.另外TMR和隧穿电导随着Rashba自旋轨道耦合强度的变化而振荡,振荡周期随Rashba自旋轨道耦合强度的增大逐渐减小. 关键词： 双自旋过滤隧道结 Rashba自旋轨道耦合 隧穿磁电阻 隧穿电导     

Spin–triplet current in half metal/conical helimagnet/superconductor heterojunctions

The BTK theory is extended to investigate spin–triplet current and differential conductance spectrum in the half metal/conical helimagnet (Holmium)/s-wave superconductor heterojunctions. We show that the effective spin–split and spin–flip scatterings of the Holmium layer control the conversion efficiency between the spin–singlet and equal-spin triplet pair correlations, leading to a tunneling current oscillation with the thickness of the Holmium layer. This can provide qualitative explanations on the current oscillation in Ho/Co/Ho-based Josephson junction experiment. The differential conductance spectrum confirms spin–flip Andreev reflection induced long-ranged equal-spin triplet pair correlations.     

塞曼效应对正常金属/超导/正常金属双隧道结中的相干隧穿电导的影响

在超导中通过外加塞曼磁场,研究正常金属/超导/正常金属双隧道结中的量子相干输运。同时考虑从一个正常金属电极注入一电子,从另一个正常金属电极注入一空穴,推导出系统的微分电导的一般公式。研究表明,电导谱随偏压展示振荡行为,随着温度和磁场的增大,其振荡振幅被降低,且塞曼能可导致电导峰的塞曼劈裂。在隧道极限下,超导体中会形成一系列束缚态。     

Quantum modulation effect in a graphene-based magnetic tunnel junction

The electronic (quantum) transport in a NG/F_B/FG tunnel junction (where NG, F_B and FG are a normal graphene layer, a ferromagnetic barrier connected to a gate and a ferromagnetic graphene layer, respectively) is investigated. The motions of the electrons in the graphene layers are taken to be governed by the Dirac Equation. Parallel (P) and antiparallel alignment (AP) of the magnetizations in the barrier and in the ferromagnetic graphene are considered. Our work focuses on the oscillation of the electrical conductance (Gq), of the spin conductance (Gs) and of the tunneling magneto resistance (TMR) of this magnetic tunnel junction. We find that, the quantum modulation due to the effect of the exchange field in F_B will be seen in the plots the conductance and of the TMR as functions of the thickness of ferromagnetic barrier (L). The period of two multiplied sinusoidal terms of the modulation are seen to be controlled by varying the gate potential and the exchange field of the F_B layer. The phenomenon, a quantum beating, is built up with two oscillating spin conductance components which have different periods of oscillation related to the splitting of Dirac's energies in the F_B region. The amplitudes of oscillations of Gq, Gs and TMR are not seen to decrease as the thickness increases. The decaying behaviors seen in the conventional transport through an insulator do not appear.     

Differential conductance of normal metal-insulator-d-wave superconductor junctions with interface roughness

Within the framework of Blonder-Tinkham-Klapwijk (BTK) model and taking into account the interface roughness, we calculate the differential conductance of normal metal-insulator-d-wave superconductor junctions. We find that the tunneling spectrum depends strongly on both the incident angle of electrons and the crystalline axis orientation of the superconductor, and exhibits the zero-bias anomaly under suitable arrangements. Interestingly, even in the absence of the insulating layer, the tunneling spectrum of normal metal-d-wave superconductor junctions differs significantly from that for normal metal-s-wave superconductor due to the interface roughness. Moreover, both the tunnel conductance peak at the energy gap and the zero-bias conductance peak are suppressed by the interface roughness. Our results can explain many experimental measurements on the tunneling spectra of high-T_c superconductors.