Ultrafast transient photoinduced absorption in Ge core and Ge/GeO<Subscript>2</Subscript> core/shell nanoparticles: effect of interface passivation

Transient photoinduced absorption in Ge core and Ge/GeO₂ core/shell nanoparticles (NPs) has been studied in visible spectral range. Two distinctive relaxation processes were observed: the fast relaxation with lifetime of several picoseconds corresponds to the carriers transfer from the excitation region to the surrounding interface or defect-related states, and the slow relaxation (tens of picoseconds) is correlated with the carriers through the interface-related states toward the indirect lowest energy states. Time-resolved studies show that the passivation of GeO₂ shell significantly reduces the density of interface state and suppresses the rate of carrier trapping in Ge/GeO₂ core/shell structure, which provides an alternative method to modulate the optical properties in NPs.     

不同生长环境下砷化镓纳米颗粒的应变场模拟

对于埋嵌在薄膜材料中的纳米颗粒,在其生长过程中总是不可避免地伴随着应变场的产生,而这种应变场的分布能反映纳米颗粒的结构变化,纳米颗粒结构与它的物理性能有重要的关系.研究埋嵌在不同薄膜材料中的纳米颗粒生长过程中的应变场分布对于调控纳米颗粒的物理性能有着重要的意义.本文利用有限元算法分别计算了埋嵌在非晶氧化铝薄膜和非晶二氧化硅薄膜材料中的砷化镓纳米颗粒生长过程中的应变场分布.砷化镓纳米颗粒在以上两薄膜材料生长过程中都受到非均匀偏应变作用.对于埋嵌在氧化铝薄膜中的砷化镓纳米颗粒,其生长过程中,纳米颗粒内部受到的应变大于纳米颗粒表面受到的应变;而对于埋嵌在二氧化硅薄膜中的砷化镓纳米颗粒,纳米颗粒内部受到的应变小于纳米颗粒表面受到的应变.选择砷化镓纳米颗粒生长的薄膜材料可以调控纳米颗粒生长过程中的应变场分布,从而进一步调控纳米颗粒的晶格结构和形貌及其物理性能.     

Luminescence properties of Ge implanted SiO2:Ge and GeO2:Ge films

We have investigated cathodeluminescence (CL) of Ge implanted SiO₂:Ge and GeO₂:Ge films. The GeO₂ films were grown by oxidation of Ge substrate at 550 °C for 3 h in O₂ gas flow. The GeO₂ films on Ge substrate and SiO₂ films on Si substrate were implanted with Ge-negative ions. The implanted Ge atom concentrations in the films were ranging from 0.1 to 6.0 at%. To produce Ge nanoparticles the SiO₂:Ge films were thermally annealed at various temperatures of 600-900 °C for 1 h in N₂ gas flow. An XPS analysis has shown that the implanted Ge atoms were partly oxidized. CL was observed at wavelengths around 400 nm from the GeO₂ films before and after Ge⁻-implantation as well as from SiO₂:Ge films. After Ge⁻-implantation of about 0.5 at% the CL intensity has increased by about four times. However, the CL intensity from the GeO₂:Ge films was several orders of magnitude smaller than the intensity from the 800 °C-annealed SiO₂:Ge films with 0.5 at% of Ge atomic concentration. These results suggested that the luminescence was generated due to oxidation of Ge nanoparticles in the SiO₂:Ge films.     

Influence of strain distribution on the morphology evolution of a Ge/GeO_2 core/shell nanoparticle confined in ultrathin Al_2O_3 thin film by surface oxidation

The influence of strain distribution on morphology evolution of Ge/GeO2 core/shell nanoparticle confined in ultrathin Al2O3 thin film by surface oxidation is investigated. A finite-element simulation is performed to simulate the morphology evolution of the confined Ge/GeO2 core/shell nanoparticle under the influence of the local strain distribution. It indicates that the resultant oxidation-related morphology of Ge/GeO2 core/shell nanoparticle confined in ultrathin film is strongly dependent on the local strain distribution. On the other hand, the strain gradients applied on the confined GeO2 shell can be modified by the formation of polycrystalline GeO2 shell, which has potential application in tailoring the microstructure and morphology evolution of the Ge/GeO2 core/shell nanoparticle.     

Formation and strain distribution of Ni/NiO core/shell magnetic nanoparticles fabricated by pulsed laser deposition

Nucleation and growth lead to substantial strain in nanoparticles embedded in a host matrix.The distribution of strain field plays an important role in the physical properties of nanoparticles.Magnetic Ni/NiO core/shell nanoparticles embedded in the amorphous Al2O3 matrix were fabricated by pulsed laser deposition.The results from a high-resolution transmission electron microscope also revealed that the core/shell nanoparticles consist of a single crystal Ni core with a faced-centered cubic structure(Space ...     

Preparation and photocatalytic properties of magnetically reusable Fe3O4@ZnO core/shell nanoparticles

Fe₃O₄@ZnO binary nanoparticles were synthesized by a simple two-step chemical method and characterized using various analytical instruments. TEM result proved the binary nanoparticles have core/shell structures and average particle size is 60 nm. Photocatalytic investigation of Fe₃O₄@ZnO core/shell nanoparticles was carried out using rhodamine B (RhB) solution under UV light. Fe₃O₄@ZnO core/shell nanoparticles showed enhanced photocatalytic performance in comparison with the as prepared ZnO nanoparticles. The enhanced photocatalytic activity for Fe₃O₄@ZnO might be resulting from the higher concentration of surface oxygen vacancies and the suppressing effect of the Fe³⁺ ions on the recombination of photoinduced electron–hole pairs. Magnetization saturation value (5.96 emu/g) of Fe₃O₄@ZnO core/shell nanoparticles is high enough to be magnetically removed by applying a magnetic field. The core/shell photocatalyst can be easily separated by using a commercial magnet and almost no decrease in photocatalytic efficiency was observed even after recycling six times.     

Surface chemistry of Fe2O3 nanoparticles on ultrathin oxide layers on Si and Ge

In this paper, we report on a comparative study of the effect of Fe₂O₃ nanoparticles (NP), introduced onto a thin oxide layer formed on silicon and germanium surfaces, on the thermal decomposition pathway of the individual oxide layers. On both the surfaces, NP of Fe₂O₃ undergo a reduction reaction through a bonding partner change reaction, where the oxygen atoms change from Fe to Si or Ge. On both the surfaces, annealing results in the conversion of the suboxide-like species to dioxide-like species (SiO_x to SiO₂ and GeO_x to GeO₂ respectively for Si and Ge surfaces), until the oxide layer decomposes following the desorption of the respective monoxide species (SiO and GeO). Both the Si and Ge corelevels show a larger chemical shift (4.1 and 3.51 eV in Si 2p and Ge 3d corelevels, respectively) for the as-prepared oxide samples with the NP, at room temperature compared to that without the NP (3.7 and 3.4 eV), indicating a catalytic enhancement of the dioxide formation. Selective formation of silicon oxides leads to encapsulation of the nanoparticles and acts like a protective layer, preventing the oxidation of Fe.     

Effect of chemical surface treatments on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 films on Ge substrates

The Ge surfaces were cleaned and passivated by two kinds of chemical pretreatments: conventional combination of HF + (NH₄)₂S, and new one of HBr + (NH₄)₂S. The chemical states and stability at passivated Ge surfaces were carefully characterized. The influence of chemical surface treatments on the interface and electrical properties of Al₂O₃ gate dielectric films on Ge grown by atomic layer deposition (ALD) has been investigated deeply. It is found that the combination of HBr and (NH₄)₂S can remove more Ge-O bonds on the Ge surface compared to that of conventional HF and (NH₄)₂S with excellent stability. X-ray photoelectron spectroscopy (XPS) reveals that HBr and (NH₄)₂S treated Ge surface has a mixture states of GeO_x (9.25%) and GeS (7.40%) while HF and (NH₄)₂S treated Ge surface has a mixture states of GeO_x (16.45%) and GeS (3.37%). And the Ge-S peak from the surface of Ge substrates decreases a little after the HBr and (NH₄)₂S treated Ge surface was exposed in the ambient for 300 min, which suggests the Ge surface is stable to oxidants. The Al₂O₃ films on HBr and (NH₄)₂S treated Ge substrates exhibits better electrical properties such as large capacitance, decreased leakage current density by ∼two orders of magnitude, and less C-V hysteresis. This indicates that a reduction in charge traps possibly at the interface and more interface traps are terminated by sulfur. The surface treatment of HBr and (NH₄)₂S seems to be very promising in improving the quality of high-k gate stack on Ge substrates.     

The tribology properties of alumina/silica composite nanoparticles as lubricant additives

The as-prepared alumina/silica (Al₂O₃/SiO₂) composite nanoparticles were synthesized with a hydrothermal method and modified by silane coupling agent. The tribological properties of the modified Al₂O₃/SiO₂ composite nanoparticles as lubricating oil additives were investigated by four-ball and thrust-ring tests in terms of wear scar diameter, friction coefficient, and the morphology of thrust-ring. It is found that their anti-wear and anti-friction performances are better than those of pure Al₂O₃ or SiO₂ nanoparticles. When the optimized concentration of nanoparticle additive is 0.5 wt.%, the diameters of wear scar and friction coefficients are both smallest. Such modified composite nanoparticles can adsorb onto the friction surfaces, which results in rolling friction. Therefore, the friction coefficient is reduced.     

Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric

La₂O₃ grown by atomic layer deposition (ALD) and thermally grown GeO₂ are used to establish effective electrical surface passivations on n-type (1 0 0)-Ge substrates for high-k ZrO₂ dielectrics, grown by ALD at 250 °C substrate temperature. The electrical characterization of MOS capacitors indicates an impact of the Ge-surface passivation on the interfacial trap density and the frequency dependent capacitance in the inversion regime. Lower interface trap densities can be obtained for GeO₂ based passivation even though a chemical decomposition of the oxidation states occur during the ALD of ZrO₂. As a consequence the formation of a ZrGeO_x compound inside the ZrO₂ matrix and a decline of the interfacial GeO₂ are observed. The La₂O₃ passivation provides a stable amorphous lanthanum germanate phase at the Ge interface but also traces of Zr germanate are indicated by X-ray-Photoelectron-Spectroscopy and Transmission-Electron-Microscopy.     

UV-protection properties of electrospun polyacrylonitrile nanofibrous mats embedded with MgO and Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanoparticles

This article describes the ultraviolet (UV) protection of MgO and Al₂O₃ nanoparticles embedded electrospun polyacrylonitrile (PAN) nanofibrous mats. UV radiation is a harmful part of sunlight and prolonged exposure to it can cause serious skin damages. In this research, nanofibrous mats consisting of nanofibers with different diameters containing different amounts of MgO, Al₂O₃, MgO Plus, and Al₂O₃ Plus nanoparticles were produced, and their UV-protection was measured. The specific surface area of MgO, MgO Plus, Al₂O₃, and Al₂O₃ Plus nanoparticles was 230, 600, 275, and 550 m²/g, respectively. The mean diameter of electrospun PAN nanofibers embedded with metal oxide nanoparticles was in the range of 665–337 nm. The results showed that the UV-protection (shielding) capability of the mats strongly depends on fiber diameter; in fact a thin mat of nanofibers has a much stronger UV-protection in comparison to a thicker mat composed of regular fibers. UV transmission is reduced as a result of embedding MgO and Al₂O₃ nanoparticles in the electrospun PAN nanofibrous mats. MgO Plus and Al₂O₃ Plus show higher UV-protection than MgO and Al₂O₃.     

Synthesis and magnetic properties of FeNi<Subscript>3</Subscript>/Al<Subscript>2</Subscript>O<Subscript>3</Subscript> core-shell nanocomposites

In this study, FeNi₃/Al₂O₃ core-shell nanocomposites, where individual FeNi₃ nanoparticles were coated with a thin layer of alumina, were fabricated by a modified sol-gel method. Several physical characterizations were performed on the samples of FeNi₃/Al₂O₃ nanocomposites with different thickness of Al₂O₃ shell. The encapsulation of FeNi₃ nanoparticles with alumina stops FeNi₃ agglomeration during heat treatment, and prevents interaction among the closely spaced magnetic FeNi₃ nanoparticles. The Al₂O₃ insulating shell improves the soft magnetic properties of FeNi₃. The study of the complex permeability of the samples shows that the real part μ’ of the permeability of the sample with Al molar content of 20% (Al/(Fe+Ni)) is as high as 12, and independent of frequency up to at least 1 GHz. The tunneling magnetoresistance arising from the presence of the Al₂O₃ shell have also been studied.     

Acoustic longitudinal mode coupling in w-shaped Al/Ge Co-doped fibre

This paper proposes a novel fibre structure aiming at distributed temperature and strain sensing. Utilizing Al₂O₃ and GeO₂ as dopants to form a w-shaped acoustic waveguide, it realizes modal coupling between longitudinal acoustic modes of its inner and outer core layers, leading to a dual-peak or multi-peak Brillouin gain spectrum. The relationship between the acoustic mode coupling properties and the fibre materials, doping concentrations and structural parameters are investigated, showing that the positions of mode coupling points in acoustic dispersion curves and the coupling intensities can be designed flexibly. A specific fibre design for the discriminative sensing of temperature and strain under a pump wavelength of 1.55 μm is given. The responses of its Brillouin gain properties on temperature and strain are analysed theoretically, demonstrating its potential for distributed fibre Brillouin sensing.     

Fabrication of ZnO/Al2O3 core-shell nanostructures and crystalline Al2O3 nanotube

We have demonstrated the crystalline ZnO-Al₂O₃ core-shell nanowire structure by atomic layer deposition (ALD) at a temperature 100 °C. The core-shell structure could have potential applications in the fabrication of ZnO field effect transistor. After dissolving the ZnO core, shape defined, rigid and robust crystalline Al₂O₃ shelled nanostructures have been fabricated. Nanowire ZnO nanostructures have been replicated by alumina shell. This is one of the most effective techniques for producing core-shell or shell/hollowed nanostructures of any desired objects. The Al₂O₃ shelled nanostructures could have potential applications as space confined nanoreactors, drug delivery, nanofluidic channels and optical transmitting.     

Dielectric matrix imposed stress–strain effect on photoluminescence of Ge nanocrystals

Ge nanocrystals embedded in SiO₂ and Lu₂O₃ matrices were fabricated using the pulsed laser deposition method and investigated using high-resolution transmission electron microscopy, X-ray diffractometry and photoluminescence spectroscopy. X-ray diffractometry and Fullprof computer program clearly revealed the bond lengths of Ge nanocrystals embedded in Lu₂O₃ matrix is smaller than that in SiO₂ matrix, which can be attributed to the greater compressive stress exerted on Ge nanocrystals by the Lu₂O₃ matrix. The greater compressive stress will lead to much more defects induced at the interface of Ge nanocrystals and thus enhance the intensity of photoluminescence. The findings presented here indicate that the matrix environment of the nanocrystals plays a significant role in the photoluminescence property.     

Violet luminescence in Ge nanocrystals/Ge oxide structures formed by dry oxidation of polycrystalline SiGe

Nanocrystals of Ge surrounded by a germanium oxide matrix have been formed by dry thermal oxidation of polycrystalline SiGe layers. Violet (3.16 eV) luminescence emission is observed when Ge nanocrystals, formed by the oxidation of the Ge segregated during the oxidation of the SiGe layer, are present, and vanishes when all the Ge has been oxidized forming GeO₂. Based on the evolution of the luminescence intensity and the structure of the oxidized layer with the oxidation time, the recombination of excitons inside the nanocrystals and the presence of defects in the bulk oxide matrix are ruled out as sources of the luminescence. The luminescence is attributed to recombination in defects at the Ge sub-oxide interface between the Ge nanocrystals and the surrounding oxide matrix, which is GeO₂.     

PVDF/PS/HDPE/MWCNTs/Fe3O4 nanocomposites: Effective and lightweight electromagnetic interference shielding material through the synergetic effect of MWCNTs and Fe3O4 nanoparticles

In this work, Polyvinylidene Fluoride (PVDF)/polystyrene (PS)/high density polyethylene (HDPE) ternary blends displayed a core-shell structure where HDPE was the core, PS was the shell, and this core-shell system dispersed in PVDF matrix. Here, multiwall carbon nanotubes (MWCNTs) and ferroferric oxide (Fe₃O₄) was incorporated. F-F composites with MWCNTs was in PS shell and Fe₃O₄ was in PVDF matrix and E-F composites with MWCNTs was in PS shell and Fe₃O₄ was in HDPE core were fabricated by melt blending. It was indicated that the core-shell morphology between PS and HDPE was well retained with the incorporation of Fe₃O₄ and MWCNTs. Both the electrical conductivity of F-F and E-F composites were similar without no obvious change with the incorporation of Fe₃O₄. Composites with greater than 20 dB shielding effectiveness were easy to obtain. The highest SE we observed was for the F-F composite with 1 vol% Fe₃O₄ and 1 vol% MWCNTs was 25 dB at 9.5 GHz, and the SE was over 20 dB in the whole measured frequency(X-band). The E-F composites with SE greater than 20 dB in X-band was at 2 vol% Fe₃O₄ and 1 vol% MWNCTs. Such effective and lightweight nanocomposites were obtained, resulting from the synergetic effect of MWCNTs and Fe₃O₄ nanoparticles.     

First principles study of electronic and structural properties of the Ge/GeO2 interface

The electronic and structural properties of the Ge/GeO₂ interface are addressed through a density functional simulation scheme which includes the use of hybrid functionals for achieving accurate band gaps, band offsets and defect levels. The present work discusses the germanium dangling bond levels, the thermodynamics of GeO_x, the stability of the oxygen vacancy across Ge/HfO₂ interfaces, the atomic structure of GeO_x, electron and hole trapping in GeO_x, and the band alignment at the Ge/GeO₂ interface.     

A novel non-thermal process of TiO2-shell coating on Fe3O4-core nanoparticles

In this work magnetite (Fe₃O₄) nanoparticles coated with titanium dioxide (TiO₂) were prepared by a novel non-thermal method. In this method, magnetite and pure TiO₂ (anatase) nanoparticles were individually prepared by the sol–gel method. After modifying the surface of magnetite nanoparticles by sodium citrate, titanium dioxide was coated on them without using conjunction or heat treatment to obtain Fe₃O₄:TiO₂ core–shell nanoparticles. XRD, EDX, SEM, TEM and VSM were used to investigate the structure, morphology and magnetic properties of the samples. The average crystallite size of the powders was measured by Scherrer's formula. The results obtained from different measurements confirm the formation of Fe₃O₄:TiO₂ core–shell nanoparticles with a decrease in saturation magnetization. Hysteresis loops of the core–shell nanoparticles show no exchange bias effects, which confirms that there is no interaction or interdiffusion at the interface.     

Evidence of GeO volatilization and its effect on the characteristics of HfO2 grown on Ge substrate

HfO₂ films are deposited by atomic layer deposition (ALD) using tetrakis ethylmethylamino hafnium (TEMAH) as the hafnium precursor, while O₃ or H₂O is used as the oxygen precursor. After annealing at 500℃ in nitrogen, the thickness of Ge oxide's interfacial layer decreases, and the presence of GeO is observed at the H₂O-based HfO₂ interface due to GeO volatilization, while it is not observed for the O₃-based HfO₂. The difference is attributed to the residue hydroxyl groups or H₂O molecules in H₂O-based HfO₂ hydrolyzing GeO₂ and forming GeO, whereas GeO is only formed by the typical reaction mechanism between GeO₂ and the Ge substrate for O₃-based HfO₂ after annealing. The volatilization of GeO deteriorates the characteristics of the high-κ films after annealing, which has effects on the variation of valence band offset and the C–V characteristics of HfO₂/Ge after annealing. The results are confirmed by X-ray photoelectron spectroscopy (XPS) and electrical measurements.