掠入射X射线衍射研究Si覆盖层对Ge/Si量子点微结构的影响

利用掠入射X射线衍射和常规X射线衍射研究了Si(001)上的Ge量子点在不同厚度的Si覆盖层下微结构的变化,同时用AFM研究了其形貌变化.实验结果表明在小的覆盖度下,量子点中组分的变化已十分明显,同时量子点的形状也发生了明显的变化.     

SnO2量子点/石墨烯复合结构的合成及其光催化性能研究

本文以SnCl₄·5H₂O和氧化石墨烯为先驱物, 乙醇水溶液为溶剂, 采用一种简单的水热法一步合成了具有可见光催化活性的SnO₂量子点(约3–5 nm)与石墨烯复合结构, 利用透射电子显微镜(TEM), 高分辨透射电子显微镜(HRTEM), X射线衍射仪(XRD), 傅里叶变换红外光谱(FT-IR)等技术对其结构进行了表征, 利用紫外可见吸收光谱(UV-vis)分析了其光学性能, 罗丹明-B染料为目标降解物研究了SnO₂量子点/石墨烯复合结构可见光催化性能. 结果表明: 与纯SnO₂、纯石墨烯相比, 复合结构显示出了很高的可见光催化活性. 通过对其结构进行分析, 我们提出了SnO₂量子点/石墨烯复合结构的形成机制及其可见光催化活性机理.     

基于紫外光辐照条件下制备ZnSe/ZnS核壳结构量子点

对传统的水相合成法进行改进,采用更加安全、简便、经济、环保的紫外光辐照方法在室温下合成了ZnSe/ZnS核壳结构量子点。调节pH值、光照时间、反应物配比等实验条件,优化了制备ZnSe/ZnS量子点核壳结构的最佳生长与修饰条件,使其具有良好色散、时间稳定性和发光特性。紫外线照射可以激发自由电子引发化学反应,研究使用了巯基乙酸(TGA)和谷胱甘肽(GSH)作为稳定剂和分散剂,用来控制ZnSe量子点的生长,得到分散均匀的ZnSe量子点。引入的光敏材料是形成ZnS的S源。利用X射线衍射(XRD)、电子显微镜(EM)、能量色散谱仪(EDX)、光致发光光谱(PL)和紫外可见光谱(UV-Vis)对量子点的晶体结构和光学性质进行了表征。结果表明, GSH修饰的ZnSe量子点相比于TGA修饰的ZnSe量子点呈现出更好的稳定性与较少的表面缺陷。ZnS的壳层生长能有效地弥补这一缺陷,但过厚的壳层会导致本征辐射的猝灭。该实验深入探索此类制备方法,并就各类影响因素和合成条件做出细致补充。实验结果结合理论分析得出ZnSe/ZnS核壳结构量子点的最佳合成条件。     

水溶性CdTe量子点荧光探针的制备表征及应用

采用水相合成法,在氮气气氛下,以3-巯基丙酸(MPA)为稳定剂制备了水溶性的CdTe量子点,并通过荧光(PL)光谱、紫外可见(UV-Vis)光谱、透射电子显微镜(TEM)和X射线粉末衍射(XRD)对样品进行了表征。XRD结果表明量子点为立方闪锌矿结构,TEM结果表明量子点分散性较好,形状为球形,平均粒径为2.0 nm。进一步考察了回流时间、反应温度和体系pH值对量子点性能的影响,结果表明:回流时间、反应温度和体系pH值对量子点的粒径大小、粒径分布及生长速度均有影响。基于量子点对金属离子具有荧光响应的特性,以CdTe量子点为荧光探针实现了对水溶液中Ni2+的检测。     

三元系和四元系GaN基量子阱结构的显微结构

GaN基量子阱是光电子器件如发光二极管、激光二极管的核心结构。实验表明,采用InGaN/GaN三元和AlInGaN/GaN四元两种不同量子阱结构的激光二极管的发光性质和发光效率有明显差别,研究了这两种不同量子阱结构的显微特征。利用原子力显微镜表征了样品的(001)面;通过高分辨X射线衍射对两种量子阱结构的(002)面作ω/2θ扫描测得其卫星峰并分析了两种不同量子阱结构的界面质量;利用X射线衍射对InGaN/GaN和AlInGaN/GaN这两种量子阱的(002)、(101)、(102)、(103)、(104)、(105)和(201)面做ω扫描,进而得到其摇摆曲线。最后利用PL谱研究了它们的光学性能。通过这些显微结构的分析和研究,揭示了InGaN/GaN三元和AlInGaN/GaN四元两种不同量子阱结构宏观性质不同的结构因素。     

CdSe量子点膨润土复合材料的制备与表征

首先以CdCl₂·2.5H₂O、SeO₂和NaBH₄为反应物,制备巯基丁二酸稳定的CdSe量子点。然后将有机膨润土与CdSe量子点溶液混合并充分搅拌,制备负载CdSe量子点的膨润土发光材料,用荧光光谱、扫描电镜和X射线粉末衍射等分析测试手段对所得材料的光谱性能与微观结构进行表征。光谱分析表明,量子点膨润土复合材料的发光颜色与量子点溶液非常一致;X射线光电子能谱分析表明,复合后的材料中含有Cd 和 Se两种元素;此外,在量子点膨润土复合材料X射线粉末衍射谱中可见CdSe量子点（111）、（220）及（331）3个晶面的衍射峰,2θ=4.3°处出现膨润土（001）衍射峰。数据表明,在制备的CdSe量子点膨润土复合材料中,量子点和膨润土的结构都没有改变。     

CBP/Alq3有机量子阱结构的光致发光

采用多源有机分子气相沉积系统(OMBD)制备了CBP/Alq₃有机多量子阱结构,利用电化学循环伏安特性和吸收光谱、小角X射线衍射、荧光光谱研究了量子阱的能带、结构和光致发光的特性。电化学循环伏安特性和吸收光谱的测量结果表明,CBP的最低占据分子轨道(LUMO)与最高占据分子轨道(HOMO)的位置分别为-2.74,-6.00eV,Alq₃的LUMO与HOMO的位置分别为-3.10,-5.80eV,所以CBP/Alq₃有机量子阱为Ⅰ型量子阱结构。小角X衍射测量显示,在小角的位置(2θ的范围在0°～3°)观察到了对应于量子阱结构的多级布拉格衍射峰,表明多层量子阱结构是有序的层状结构,界面比较完整,界面质量比较好。荧光光谱的研究结果表明,Ⅰ型量子阱结构可以有效地把能量从垒层传递给阱层,从而增强了阱层材料的发光。阱层的厚度对发光峰的位置影响很大,随阱层厚度减小,阱层材料的发光峰出现蓝移现象。并对引起发光峰蓝移的原因进行了讨论。     

微波辐射法制备水溶性CdTe量子点及其光谱学研究

用半胱胺作为稳定剂,采用微波辐射加热的方法快速合成了水溶性的CdTe量子点.吸收光谱和荧光光谱表明所合成的量子点具有优异的发光性能.透射电子显微镜(TEM)和X射线粉末衍射(XRD)表征了量子点的结构和粒径分布.通过荧光发射光谱研究了反应温度、加热时间和配体浓度对量子点晶体生长速度的影响.反应温度提高或稳定剂半胱胺的浓度减小,纳米晶体的生长速度加快.在一定温度下,随着反应时间的延长,量子点发射波长发生红移.与传统的水相回流方法相比微波加热制备水溶性的CdTe量子点具有反应速度快、得到的量子点尺寸分布均匀、半峰宽较窄和量子产率较高等特点.     

核壳结构硒化镉/硫化镉/巯基乙酸量子点载流子输运特性

采用水溶液法合成了巯基乙酸(TGA) 包覆的CdSe 量子点. 通过X 射线粉末衍射和高分辨透射显微镜检测结果证实, 合成得到闪锌矿结构CdSe 量子点. 能谱图和傅里叶变换红外光谱图结果说明, 在核CdSe 纳米粒子表面与配体TGA 之间有CdS 壳层结构形成. 利用样品表面光电压(SPV) 谱, 指认CdSe 量子点精细能带结构以及各自对应的激发态特征: 475 nm (2.61 eV) 和400 nm (3.1 eV) 两个波长处的SPV 响应峰分别与CdSe 核和CdS 壳层带-带隙跃迁相对应; 370 nm (3.35 eV) 附近SPV 响应峰可能与TGA 中羰基与巯基或羧基之间发生的n →π^* 跃迁有关. 场诱导表面光电压谱结果证实, 合成的CdSe 量子点具有明显的N 型表面光伏特性, 而上述n→π^* 跃迁则具有P 型表面光伏特性. 荧光光谱谱线均匀增宽以及SPV 响应峰位蓝移, 说明样品具有明显的量子尺寸效应. 结合不同pH 值下合成的CdSe 量子点的SPV 谱和表面光声谱发现, SPV 响应强度与表面光声光谱信号强度变化趋势恰好相反. 上述样品表面光伏效应表明, CdSe 量子点表面和相界面处的精细电子结构以及光生载流子的输运特性均与量子点的尺寸大小存在某种内在联系. 关键词： 硒化镉量子点 光生载流子 表面光电压谱 表面光声光谱     

Si掺杂对AlGaInP/GaInP多量子阱性能的影响

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP／GaInP多量子阱红光LED外延片。以X射线双晶衍射技术和光致发光技术对外延片进行了表征,研究了Si掺杂对AlGaInP／GaInP多量子阱性能的影响。研究表明：掺Si能大大提高(Al0．3Ga0.7)0.5In0.5P／Ga0.5In0.5P多量子阱的发光强度。相对于未故意掺杂的样品,多量子阱垒层掺Si使多量子阱的发光强度提高了13倍,阱层和垒层均掺Si使多量子阱的发光强度提高了28倍。外延片的X射线双晶衍射测试表明,Si掺杂并没有使多量子阱的界面质量变差。     

Evolution of Luminescence with Shell's Thickness in Colloidal CdSe/CdS Core/Shell Quantum Dots

We synthesize colloidal CdSe/CdS core/shell quantum dots with different shell thicknesses, and there are five samples including CdSe core dots, and CdSe/CdS core/shell dots with 1-4 CdS layers. X-ray diffraction and Raman measurements indicate that the stress in CdSe core becomes stronger with the increasing shell thickness, and the optical measurements show that when the shell becomes thicker, the photoluminescence quantum yield is enhanced, and the radiative decay is also expedited. The temperature-dependent optical spectra are measured. The relation between the microstructure and the optical properties is discussed.     

Facile synthesis of mercaptosuccinic acid-capped CdTe/CdS/ZnS core/double shell quantum dots with improved cell viability on different cancer cells and normal cells

Water-soluble, mercaptosuccinic acid (MSA)-capped CdTe/CdS/ZnS core/double shell quantum dots (QDs) were prepared by successive growth of CdS and ZnS shells on the as-synthesized CdTe/CdS_thin core/shell quantum dots. The formation of core/double shell structured QDs was investigated by ultraviolet-visible (UV–Vis) absorption and photoluminescence (PL) spectroscopy, PL decay studies, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The core/double shell QDs exhibited good photoluminescence quantum yield (PLQY) which is 70% higher than that of the parent core/shell QDs, and they are stable for months. The average particle size of the core/double shell QDs was ～3 nm as calculated from the transmission electron microscope (TEM) images. The cytotoxicity of the QDs was evaluated on a variety of cancer cells such as HeLa, MCF-7, A549, and normal Vero cells by 3-(4,5-dimethyl-2-thiazolyl)-2,5-diphenyl-2H-tetrazolium bromide (MTT) cell viability assay. The results showed that core/double shell QDs were less toxic to the cells when compared to the parent core/shell QDs. MCF-7 cells showed proliferation on incubation with QDs, and this is attributed to the metalloestrogenic activity of cadmium ions released from QDs. The core/double shell CdTe/CdS/ZnS (CSS) QDs were conjugated with transferrin and successfully employed for the biolabeling and fluorescent imaging of HeLa cells. These core/double shell QDs are highly promising fluorescent probe for cancer cell labeling and imaging applications.     

Synthesis and Characterization of CdS/CISe Quantum Dots with Core–Shell Structure

Quantum dots have received great interest due to their excellent optoelectronic properties. However, the surface defects of quantum dots affect the carrier transport and ultimately reduce the photovoltaic efficiency. In this paper, a core–shell quantum dot by hot-injection method is prepared to grow a narrow-band semiconductor layer (CuInSe₂ (CISe) quantumdot) on the surface of a broad-band core material (cadmium sulfide (CdS) nanocrystal). The composition, structure, optical properties, and decay lifetime of CdS/CISe core–shells are investigated in more detail by X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL), UV–vis spectrophotometry, and fluorescence spectroscopy. The CdS/CISe core–shell structure has a broadened absorption range and still shows CISe-related quantum effects. The increased size of the core–shell and the smaller specific surface area of the CISe shell layer lead to a lower carrier complexation chance, which improves the carrier lifetime.     

CdS量子点的酿酒酵母仿生合成及光谱表征

以酿酒酵母为载体,常温下利用仿生法成功合成了CdS量子点。荧光发射光谱、紫外吸收光谱以及荧光显微镜照片证明,该方法合成的CdS量子点的荧光发射峰位置在443nm,在紫外灯下能发蓝绿色荧光。透射电子显微镜(TEM)表征结果表明,该仿生法合成的CdS量子点为六方纤锌矿结构。以荧光发射和紫外吸收光谱为性能指标,考察了酿酒酵母生长时期、Cd2+的反应浓度以及反应时间等条件对合成CdS量子点的影响。当酿酒酵母处于生长稳定期初期时,与浓度为0.5mmol.L-1的Cd2+共培养24h后所合成的CdS量子点荧光最强。实验中观察到,换液培养可有效提高酿酒酵母合成CdS量子点的产量。     

谷胱甘肽包被的CdSe/CdS量子点的直接水相制备及其对人血淋巴细胞的标记成像

首次用谷胱甘肽(GSH)作为稳定剂,在水溶液中制备了稳定地发射绿色荧光和橙色荧光的两种 CdSe/CdS核/壳结构的纳米量子点。用紫外-可见分光光度和荧光光谱方法研究了CdSe/CdS量子点的发光特性。透射电镜(TEM)结果表明CdSe/CdS量子点近似球形,在水中分散性良好,比CdSe量子点具有更优异的发光特性,发射光谱和吸收光谱都有红移现象。将CdSe/CdS量子点与鼠抗人CD3抗体连接,制备了水溶性CdSe/CdS-CD3复合物探针,对人血淋巴细胞进行标记和成像。结果表明用该探针对人血淋巴细胞成像清晰,其荧光在30 min的连续蓝光激发下无明显衰退,而FITC荧光在20 min内基本完全猝灭。     

Cell labeling and cytotoxicity of aqueously synthesized CdTe/CdS/ZnS core–shell–shell quantum dots by a water bath-hydrothermal method

CdTe/CdS/ZnS core–shell–shell quantum dots (QDs) were synthesized in aqueous solution via water-bathing combined hydrothermal method using L-cysteine as a stabilizer. The present method features markedly reduced synthesis time, higher fluorescent intensity and lower cytotoxicity of the QDs. Structural and spectroscopic properties of core–shell–shell QDs are well characterized by absorption and fluorescence spectroscopy, X-ray diffraction, transmission electron microscopy, and fourier transform infrared spectroscopy. Both CdS and ZnS shells were capped on the CdTe core and the fluorescence was greatly enhanced by the ZnS coating. The ternary QDs conjugated with transferrins were successfully employed for the biolabeling and fluorescent imaging of HeLa cells. Cytotoxicity evaluation shows that CdTe/CdS/ZnS was less toxic for cells than CdTe and CdTe/CdS due to the presence of a ZnS coating on surface, which inhibited the release of cadmium ions.     

Preparation of water-soluble CdTe/CdS core/shell quantum dots with enhanced photostability

CdTe/CdS core/shell quantum dots (QDs) have been synthesized in an aqueous phase using thioacetamide as a sulfur source. The quantum yield was greatly enhanced by the epitaxial growth of a CdS shell, which was confirmed by X-ray photoelectron spectroscopy (XPS) results. The quantum yield of as-prepared CdTe/CdS core/shell QDs without any post-preparative processing reached 58%. The experimental results illustrate that the QDs with core/shell structure show better photostability than thioglycolic acid (TGA)-capped CdTe QDs. The cyclic voltammograms reveal higher oxidation potentials for CdTe/CdS core/shell QDs than for TGA-capped CdTe QDs, which explains the superior photostability of QDs with a core/shell structure. This enhanced photostability makes these QDs with core/shell structure more suitable for bio-labeling and imaging.     

水溶性CdTe/CdS纳米晶表面SiO2壳层的反相胶束法包覆

"提出了一种水相中制备CdTe/CdS核壳结构纳米粒子的方法.用Te粉作为碲源,用Na2S作为硫源,在50 ℃下制备了CdTe/CdS核壳结构纳米粒子. 用紫外可见吸收光谱和荧光光谱分析了CdS壳层对CdTe核的影响. 随CdS壳层厚度的增加,紫外可见吸收光谱和荧光光谱均发生了红移. CdS壳层厚度较薄时,CdTe/CdS纳米晶的荧光强度较CdTe纳米粒子有显著提高;而CdS壳层厚度较厚时,CdTe/CdS纳米晶的荧光强度会逐渐降低. 用反相胶束法在CdTe/CdS核壳结构纳米粒子的表面包被一层SiO2,     

ZnCuInS/ZnSe/ZnS量子点发光光谱特性的研究

ZnCuInS/ZnSe/ZnS量子点是一种无毒,无重金属的“绿色”半导体纳米材料。在研究中,制备了三种尺寸的ZnCuInS/ZnSe/ZnS核壳量子点,其直径分别为3.3,2.7,2.3 nm。通过测量不同尺寸的ZnCuInS/ZnSe/ZnS量子点的光致发光光谱,其发射峰值波长随尺寸的减小而蓝移。其吸收峰值波长和发射峰值波长分别是510,611(3.3 nm),483,583(2.7 nm)以及447,545 nm(2.3 nm)。ZnCuInS/ZnSe/ZnS量子点具有显著的尺寸依赖效应。ZnCuInS/ZnSe/ZnS量子点的斯托克斯位移分别为398 meV(3.3 nm),436 meV(2.7 nm)以及498 meV(2.3 nm),这样大的斯托克斯位移证明,ZnCuInS/ZnSe/ZnS量子点的发光机制与缺陷能级有关。同时,对直径为3.3 nm的ZnCuInS/ZnSe/ZnS量子点进行了温度依赖的光致发光光谱的测量,当温度为15～90 ℃时,该量子点发射峰值波长随温度的升高而红移,发光强度随温度的升高而降低,说明ZnCuInS/ZnSe/ZnS量子点是以导带能级与缺陷能级之间跃迁为主的复合发光。     

低强度飞秒激光激发下CdTe和CdTe/CdS核壳量子点的荧光上转换研究

利用400 nm和800 nm不同波长的低强度飞秒激光,对CdTe和CdTe/CdS核壳量子点溶胶进行激发,研究其稳态和时间分辨荧光性质.800 nm飞秒激光激发下,CdTe和CdTe/CdS核壳量子点产生上转换发光现象,上转换荧光峰与400 nm激发下的荧光峰相比蓝移最多达15 nm,而且蓝移值与荧光量子产率有关.变功率激发确认激发光功率与上转换荧光强度间满足二次方关系,时间分辨荧光的研究表明荧光动力学曲线服从双e指数衰减.提出表面态辅助的双光子吸收模型是低激发强度上转换发光的主要机理.CdTe和CdT 关键词： CdTe量子点 CdTe/CdS核壳量子点 时间分辨荧光 上转换荧光