Charge state of a transition metal impurity in II–VI semiconductors

The results of calculating the electronic structure of semiconductor compounds A^IIB^VI: 3d(A = Zn; B = S, Se, Te; 3d = Sc-Cu) at a low content of 3d impurities are discussed. The excess charge of an impurity ion with respect to the charge of the zinc ion is determined for the whole series of 3d impurities. It is found that the excess charge gradually varies from +0.6|e| for the scandium impurity to ?0.2|e| for the copper impurity. Photoionization of an impurity ion is simulated by adding a hole or an electron to the impurity center. The added charge is redistributed between the impurity ion and its nearest neighbors, thus decreasing or increasing the total excess charge of the impurity center by a magnitude of ～ 0.2|e|.     

Electron localization during an electronic-topological transition in Mo-Re alloys

Oscillations in the superconducting transition temperature ΔT _c (P), in the critical magnetic field ΔH _c (P), in the thermopower α / T (T ²), and in electrical resistivity ρ(T) (P is pressure) of Mo_1?x -Re _x alloys are observed at low temperatures against the background of specific features related to an electronic-topological transition (ETT) in these alloys. The oscillations are sensitive to the impurity concentration: they increase when the Re impurity concentration is close to the critical concentration C _c at which the ETT occurs. Oscillations are also detected in the concentration dependences of the temperature coefficient of resistivity (?ρ / ?T (C)) and the thermopower derivative (?(α/T) / ?T ² (C)) of Mo_1?x -Re _x alloys at low temperatures. The former and latter oscillations are shown to correlate with each other. These specific features are assumed to result from the ETT and to be related to the localization of the part of the electrons that fill a new cavity in the Fermi surface during this transition.     

Enhancement of superconductivity in disordered films by parallel magnetic field

We show that the superconducting transition temperature T _c (H) of a very thin highly disordered film with strong spin-orbital scattering can be increased by a parallel magnetic field H. This effect is due to the polarization of magnetic impurity spins, which reduces the full exchange scattering rate of electrons; the largest effect is predicted for spin-1/2 impurities. Moreover, for some range of magnetic impurity concentrations, the phenomenon of superconductivity induced by magnetic field is predicted: the superconducting transition temperature T _c (H) is found to be nonzero in the range of magnetic fields 0 < H* ≤ H ≤ H _c .     

Features of Electronic Structure of Intermetallic Compounds CeNi<Subscript>4</Subscript>M (M = Fe,Co, Ni,Cu)

The evolution of the electronic structure of CeNi₄M (M = Fe, Co, Ni, Cu) intermetallics depending on the type of nickel substitutional impurity is explored. We have calculated band structures of these compounds and considered options of substituting one atom in nickel 3d sublattice in both types of crystallographic positions: 2c and 3g. The analysis of total energy self-consistent calculations has shown that positions of 2c type are more energetically advantageous for single iron and cobalt impurities, whereas a position of 3g type is better for a copper impurity. The Cu substitutional impurity does not change either the nonmagnetic state of ions or the total density at the Fermi level states. Fe and Co impurities, on the contrary, due to their considerable magnetic moments, induce magnetization of 3d states of nickel and cause significant changes in the electronic state density at the Fermi level.     

Magnetic impurities in a two-dimensional superfluid Fermi gas with spin-orbit coupling

We study magnetic impurities in a two dimensional superfluid Fermi gas with thespin-orbit coupling and find that the spin-orbit coupling makes some dramatic impacts onthe effects of magnetic impurities. For the single impurity problem, we find that thenumber of bound states localized around the magnetic impurity is doubled. For the finiteconcentration n of impurities, we find that the energy gap is reduced andthe density of states in the gapless region is greatly modified; there exists a gaplesssuperfluid and N(ω) ∝ ω in the smallω limit.     

Crossover from Mott to Efros-Shklovskii variable range-hopping in Si:P

The low-temperature conductivity of uncompensated insulating Si:P with P concentration just below the metal-insulator (MI) transition shows with decreasingN a crossover from Mott variable range hopping (VRH) to Efros-Shklovskii VRH. From the concentration dependence of the Mott temperatureT _M a correlation-length exponent ν=1.1 is obtained which is compatible with the conductivity exponent μ=1.3 for metallic samples.     

Intrinsic and Zn-, Ce-, Tb-, Er-, Sm-, and Eu-Activated photoluminescence of pseudoamorphous GaN and InGaN thin films

Thin films of pseudoamorphous GaN (a-nc-GaN), as well as of its alloys with indium, In_xGa_1−x N (x=0.04, 0.16), were prepared by magnetron sputtering of a metallic target in the plasma of a reactive nitrogen and argon mixture. The a-nc-GaN films were codoped by the Zn acceptor impurity and a set of rare-earth metal (REM) dopants, namely, Ce, Tb, Er, Sm, and Eu. Photoluminescence (PL) spectra excited by a nitrogen laser with wavelength λ=337 nm at room temperature and 77 K were measured for all compositions and a set of impurities. It was shown that the high-energy PL edge of the pseudoamorphous (a-nc) GaN matrix lies at the same energy as that of the crystalline (epitaxial) c-GaN. As in c-GaN, the Zn acceptor impurity stimulates blue luminescence; however, the PL spectrum is substantially more diffuse, with practically no temperature quenching of the PL present. Indium doping in an amount of 16 at. % results in strong PL with a diffuse peak at 2.1–2.2 eV; the PL of the alloy exhibits temperature quenching as high as a factor of three to four in the interval 77–300 K. The decay time of the PL response increases up to 50 μs. RE impurities enter the amorphous GaN host as trivalent ions and produce narrow-band (except Ce) high-intensity spectra, thus indicating both a high solubility of RE impurities in a-nc-GaN and the generation of an effective crystal field (by the GaN anion sublattice) whose local symmetry makes the intracenter f-f transitions partly allowed. __________ Translated from Fizika Tverdogo Tela, Vol. 45, No. 3, 2003, pp. 395–402. Original Russian Text Copyright ? 2003 by Andreev.     

Metal-insulator transition in whiskers of the NbS<Subscript>3</Subscript> quasi-one-dimensional conductor under pressure

The effect of pressure on the conduction of the NbS₃ quasi-one-dimensional conductor is studied. A pressure-induced insulator-metal transition is observed. The transition is accompanied by an increase in conductivity by six orders of magnitude at room temperature. Under pressures of 3–4 GPa, an additional phase transition appears in the temperature dependences of resistance. This transition manifests itself in an increase in the local conduction activation energy. The quantity dln(R)/d(1/T) reaches its maximum under pressures of 4–5 GPa, and the temperature position of the maximum of dln(R)/d(1/T) depends on the pressure as T* ≈ 7.5P + 202 K.     

Magnetization of beryllium oxide in the presence of nonmagnetic impurities: Boron,carbon, and nitrogen

The electronic and magnetic states of a nonmagnetic insulator, namely, beryllium oxide, doped with nonmagnetic 2p elements (boron, carbon, and nitrogen) are studied using the density functional theory. The spin polarization of the 2p impurity states, as well as the transition of the doped BeO:(B,C,N) systems to the states of semiconducting or half-metallic magnets, is observed. The prospects for creating new magnetic materials by doping nonmagnetic insulators with nonmagnetic p impurities are discussed.     

Thermoelectric power of amorphous alloys near the metal-insulator transition

The thermoolectric powerS and the electrical conductivity σ of amorphous Au_xSb_100-x and Cu_xSb_100-x films have been measured in the temperature range between about 2 K and 350 K for concentrations close to the eetal-insulator transition. In both systems the transition occurs at a critical concentrationx _c≈8 at.% noble metal content. A characteristic feature of the transition is in both cases a strong increase of the low temperature slope of the thermopower, i.e.S/T| _t»0 , when approachingx _c from the metallic side. The results are compared with different theoretical predictions for the metal-insulator transition. Furthermore we report on the changes ofS and σ during annelaing. It will be shown that especiallyS(T) of the samples withx close tox _c depends strongly on the annealing state of the films.     

Diluted magnetic semiconductors and spintronics

Classification of concentrated and diluted magnetic semiconductors is given and their physicochemical properties that are interesting for spintronics are characterized. The electronic structure of magnetic impurities in semiconductors and the nature of indirect exchange interactions between impurity spins in diluted magnetic semiconductors are considered. On the basis of the proposed theory of kinematic exchange, the Curie temperature T _C for bulk diluted magnetic semiconductors (In,Mn)Sb are estimated.     

Size effects in electrical and magnetic properties of quasi-one-dimensional tin wires in asbestos

Bulk composites have been prepared based on one-dimensional fibers of natural chrisothil-asbestos with various internal diameters (d = 6–2.5 nm) filled with tin. The electrical and magnetic properties of quasi-one-dimensional Sn wires have been studied at low temperatures. The electrical properties have been measured at T = 300 K at a pressure P = 10 kbar. It has been found that the superconducting (SC) characteristics of the nanocomposites (critical temperature T_c and critical magnetic field H_c) increase as the Sn filament diameter decreases. The temperature spreading of the resistive SC transition also increases as the Sn filament diameter decreases, which is explained by the SC order parameter fluctuations. The size effects (the increase in critical temperature T_c and transition width ΔT_c) in Sn nanofilaments are well described by the independent Aslamazov–Larkin and Langer–Ambegaokara fluctuation theories, which makes it possible to find the dependence of T_c of the diffuse SC transition on the nanowire diameter. Using the temperature and magnetic-field dependences of the magnetic moment M(T, H), it has been found that the superconductor–normal metal phase diagram of the Sn–asbestos nanocomposite has a wider region of the SC state in T and H as compared to the data for bulk Sn. The magnetic properties of chrisotil-asbestos fibers unfilled with Sn have been studied. It has been found that the Curie law is fulfilled and that the superparamagnetism is absent in such samples. The obtained results indicate the absence of magnetically ordered impurities (magnetite) in the chrisotil-asbestos matrix, which allowed one to not consider the problem of the interaction of the magnetic subsystem of the asbestos matrix and the superconducting subsystem of Sn nanowires.     

Quenched disorder effects in electron transport in Si inversion layers in the dilute regime

In order to reveal the effects of disorder in the vicinity of the apparent metal-insulator transition in 2D, we studied electron transport in the same Si device after cooling it down to 4 K at different fixed values of the gate voltage V^cool. Different V^cool did not significantly modify either the momentum relaxation rate or the strength of electron-electron interactions. However, temperature dependences of the resistance and the magnetoresistance in parallel magnetic fields in the vicinity of the 2D metal-insulator transition carry a strong imprint of the quenched disorder determined by V^cool. This demonstrates that the observed transition between the metallic and insulating regimes, besides the universal effects of electron-electron interaction, depends on the sample-specific localized states (disorder). We report on evidence for a weak exchange of electrons between the reservoirs of extended and resonant localized states that occur at low densities. The strong cool-down dependent variations of ρ(T), we believe, are evidence for a developing spatially inhomogeneous state in the critical regime.     

Transport features in laser-plasma-deposited InMnAs layers in strong magnetic fields

We have studied the magnetotransport properties of p-InMnAs layers in strong (up to 30 T) pulsed magnetic fields. The p-InMnAs layers were obtained by laser plasma deposition with subsequent annealing by radiation of a pulsed ruby laser. Under anomalous Hall effect conditions in a strong magnetic field (above 20 T), the Hall resistance in the paramagnetic region of temperatures is greater than that in the ferromagnetic region (below 40 K). It has also been established that, at helium temperatures, the negative magnetoresistance exhibits saturation in a field of about 10 T, whereas the anomalous Hall effect is saturated at about 2 T. At T ≈ 4 K, the resistance in a field of 10 T exhibits a more than tenfold decrease. The results are explained by a mesoscopically inhomogeneous distribution of the acceptor (Mn) impurity, a local ferromagnetic transition, and a percolation character of the conductivity of p-InMnAs films in a state close to the insulator-metal phase transition. The characteristic scale of magnetoelectric inhomogeneity in the system is evaluated based on an analysis of mesoscopic fluctuations of the nondiagonal component of the magnetoresistance tensor.     

Reconstruction of the 2D hole gas spectrum for selectively doped <Emphasis Type="Italic">p</Emphasis>-Ge/Ge<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S<Subscript>ix</Subscript> heterostructures

The magnetic field (0≤B≤32 T) and temperature (0.1≤T≤15 K) dependences of longitudinal and Hall resistivities have been investigated for p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 12≤d _w ≤20 nm and hole densities p _s =(1–5)×10¹⁵ m^?2. An extremely high sensitivity of the experimental data (the structure of magnetoresistance traces, relative values of the inter-Landau-level gaps deduced from the activation magnetotransport, etc.) to the quantum well profile is revealed in the cases where the Fermi level reaches the second confinement subband. An unusually high density of localized states between the Landau levels is deduced from the data. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside the conducting layer and the model of the system with a spacer) are used to evaluate the impurity potential fluctuation characteristics: the random potential amplitude, the nonlinear screening length in the vicinity of integer filling factors v=1 and v=2, and the background density of states (DOS). The described models are suitable for explanation of the observed DOS values, while the short-range impurity potential models fail. For half-integer filling factors, a linear temperature dependence of the effective quantum Hall effect plateau-plateau (PP) transition widths v₀(T) is observed, contrary to the expected scaling behavior of the systems with short-range disorder. The finite T→0 width of the PP transitions may be due to an effective low-temperature screening of a smooth random potential due to the Coulomb repulsion of electrons.     

Percolative transition in carbon-ion implanted type II<Emphasis Type="Italic">a</Emphasis> diamond

Experimental data for the conductivity of type IIa diamond specimens implanted at low temperatures with carbon ions, followed by high temperature annealing, have been analyzed using hopping and percolation theories in the vicinity of the insulator-metal transition. Near the transition it appears that conductivity occurs viasp ²-bonded graphitic clusters which are randomly distributed in thesp ³-bonded diamond matrix. A conductivity crossover between the Mott and Efros-Shklovskii VRH laws has been observed on the insulating side of the transition.     

EPR and photoluminescence spectra of smooth CD<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films from T-10 tokamak: The effect of iron impurity

The electron and spin structure of thick smooth hydrocarbon CD _x films (“flakes”) with a high relative deuterium concentration of x ~ 0.5, redeposited from deuterium plasma discharge onto the walls of the vacuum chamber of the T-10 tokamak and containing ~1 at % of 3d-metal impurities due to erosion of the chamber walls, are studied using electron paramagnetic resonance (EPR) and photoluminescence (PL). The resulting spectra are compared for the first time to the EPR and photoluminescence spectra of polymer (soft) a-C:H(D) films (H(D)/C ~ 0.5), which are considered model analogues of smooth CD _x films. A certain similarity of the CD _x films with a-C:H films was found in the electronic structure of the valence band. At the same time, the differences in the EPR and photoluminescence spectra were observed due to the presence of 3d-metal impurities in the CD _x samples, contributing to the conversion of sp ³ → sp ² in the formation of films in the tokamak and upon heating and thermal desorption. An impurity of, presumably, 3d metals was detected for the first time by EPR in the a-C:H films in an amount of approximately 0.2 ppm, related to the evaporation of graphite.     

Superconductivity and metal-insulator transition in Cu(Ir<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Rh<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>2</Subscript>S<Subscript>4</Subscript>

A new thiospinel CuIr₂S₄ exhibits a metal-insulator (M-I) transition at 226 K, while CuRh₂S₄ shows a superconducting transition at 4.70 K. We present a systematic study of electrical and magnetic properties of Cu(Ir_1?x Rh _x )₂S₄. TheM-I transition of CuIr₂S₄ is accompanied by a structural phase transition from tetragonal symmetry in insulating phase to cubic symmetry in high temperature metallic phase. With increasing Rh contentx, the sharpM-I transition shifts to lower temperature forx≦0.10. The samples show semiconductive behavior for 0.10≦0.30 between 4.2 and 300 K, and recover the metallic state forx≧0.50. The superconducting transition may occur for very close tox=1.00. Magnetic susceptibility shows the jump at theM-I transition temperature and the variation ofx leads to a systematic change of the magnetic susceptibilities, which is consistent with the electrical characteristic feature.     

Effect of intrinsic defects on the electronic structure of BN nanotubes

The effect of intrinsic defects on the electronic structure of boron-nitrogen nanotubes (5, 5) and (9, 0) is investigated by the method of linearized associated cylindrical waves. Nanotubes with extended defects of substitution N _B of a boron atom by a nitrogen atom and, vice versa, nitrogen by boron BN with an impurity concentration of 1.5 to 5% are considered. It is shown that the presence of such defects significantly affects the band structure of boron-nitrogen nanotubes. A defect band D^π(B, N) is formed in the bandgap, which sharply reduces the width of the gap. The presence of impurities also affects the valence band: the widths of s, sp, and p_π bands change and the gap between s and sp bands is partially filled. These effects may be detected experimentally by, e.g., optical and photoelectron spectroscopy.     

Effect of point defect concentration in NaCl and LiF crystals on the saturation field of the magnetoplastic effect

The effect is studied of the calcium impurity concentration in NaCl crystals and of preliminary x-ray irradiation of NaCl and LiF crystals on the magnetic saturation field B₀ characterizing the transition from the conventional proportionality of the dislocation mean path length l to the magnetic induction B squared(l∝B²) to saturation (l=const). B₀ is shown to increase with the calcium concentration in NaCl crystals and with the dose of x-ray irradiation of NaCl and LiF. This finding indicates that the dislocation breakaway from local defects in weak magnetic fields is controlled by the mechanism of longitudinal spin relaxation in a system of radical pairs that form due to interaction between dislocation cores and paramagnetic centers.