CaS∶Eu,Sm及其在农用转光膜上的应用原理

利用稀土直接掺杂工艺合成了一种“常光充能”型电子陷获材料CaS∶Eu,Sm,它不仅具有CaS∶Eu无机发光材料的荧光光谱特性,而且具有红外升频转换特性,可将0.8～ 1.6μm的红外光直接转换为～672nm的红光、量子效率高达76%,是一种优于CaS∶Eu的光转换农膜添加剂.而共掺Eu2＋、Sm3＋和Cu＋的CaS荧光粉有望成为一种性能优于光转换农膜添加剂CaS∶Eu2＋,Cu＋、可人工模拟叶绿素吸收光谱的新型农用转光膜材料.     

LiNbO3:Cu:Ce晶体非挥发全息存储性能的理论研究

以双中心模型为基础, 理论研究了LiNbO₃:Cu:Ce晶体在稳态情况下的非挥发双光双步全息存储性能. 研究中考虑了在晶体深能级中心Cu⁺/Cu²⁺ 与浅能级中心Ce³⁺/Ce⁴⁺ 之间由隧穿效应引起的电荷直接交换过程. 结果表明, 总的空间电荷场大小主要由深能级上的空间电荷场所决定, 并且非挥发全息存储性能主要由隧穿效应引起的深能级中心Cu⁺/Cu²⁺ 与浅能级中心Ce³⁺/Ce⁴⁺ 之间的电荷直接交换过程所决定. 与隧穿效应相关的材料参数对于非挥发双光双步全息存储的性能起到了至关重要的作用.     

BaZr(BO3)2:Eu的合成及发光性能研究

用硝酸盐热分解法成功制备了BaZr(BO₃)₂:Eu(Eu³⁺的掺杂量为摩尔分数5％)荧光材料，并研究了其在254及147nm光束激发下的发光特性.254nm光束激发下的发射主峰位于612nm处，归属于Eu³⁺的⁵D₀—⁷F₂的电偶极跃迁，但在147nm光束激发下的发射主峰位于592nm处，归属于Eu³⁺的相似文献   

SiN掺杂提高BaMgAl10O17:Eu2+荧光粉光学性能的第一性原理研究

使用基于密度泛函理论的CASTEP软件计算了BAM:Eu²⁺(BaMgAl₁₀O₁₇:Eu²⁺)荧光粉在SiN掺杂前后的能带、态密度、吸收光谱和Mulliken布居．Eu²⁺处于BR位置光吸收更强;SiN掺杂使处于BR位置的Eu²⁺的数量上升,而处于mO位置的Eu²⁺的数量下降,抵消了SiN掺杂降低Eu的态密度对光谱的影响．所以适量掺杂的SiN提高了BAM:Eu²⁺荧光粉的吸收发射光谱强度．Si-N键和Eu-N键的Mulliken布居数分别高于Al-O键和Eu-O键, 说明Si-N键和Eu-N键的共价性分别强于Al-O键和Eu-O键．发光中心Eu²⁺局域结构共价性的增强降低了BAM:Eu²⁺镜面层的活性,这是SiN掺杂提高BAM:Eu²⁺+荧光粉光学稳定性的主要原因．     

新型光存储材料Sr2SnO4: Tb3+, Li+ 的合成及其红外上转换光激励发光性能的研究

采用高温固相法获得了一种只具有 微弱余辉的新型电子俘获型光存储材料Sr₂SnO₄:Tb^{3 +}, Li ⁺. 发光性能研究结果表明: 该材料对980 nm的红外激光具有很好的上转换光激励信息读出响应, 同时292 nm紫外光为其最佳信息写入光源. 光存储性能研究结果表明: 该材料的浅陷阱较少, 因此其余辉发光很弱, 不到500 s; 另一方面, 该材料中存在大量的深蓄能陷阱. 因此, Sr₂SnO₄: Tb^{3 +}, Li⁺是一种具有较好实际应用价值的新型电子俘获型光存储材料. 此外, 还讨论了Sr₂SnO₄: Tb^{3 +}, Li⁺的光存储发光机理.     

掺杂浓度和烧结温度对CaWO4:Eu3+发光性能的影响

采用微乳液法合成掺杂浓度不同和烧结温度不同的CaWO₄:Eu³⁺系列荧光体, 这些荧光体都具有Eu³⁺离子的特征荧光发射. 在不同温度烧结后, 高浓度掺杂的样品(Eu³⁺掺杂30或50 mol%)可获得最大的发光强度, 低浓度掺杂的样品(掺杂0.5—2 mol%)在800 ℃烧结时也可获得优异的发光强度. 实验结果表明, Eu³⁺离子高浓度掺杂的CaWO₄:Eu³⁺在紫外光激发下可成为高效发光的荧光粉.     

Ag+掺杂的立方相Y2O3:Eu纳米晶体粉末发光强度研究

采用化学自燃烧法制备了不同Ag⁺掺杂浓度的Y₂O₃:Eu纳米晶体粉末样品(［Y³⁺］∶［Eu³⁺］∶［Ag⁺］=99∶1∶X，X=0—3.5×10^-2)，以及通过退火处理得到了相应的体材料.根据X射线衍射谱确定所得纳米和体材料样品均为纯立方相.实验表明在纳米尺寸样品中随着Ag离子浓度的增加，荧光发射强度随之增加，当X=2×10^-2时达到最大值，其发光强度比X=0时提高了近50%.当Ag离子浓度继续增加，样品发光强度保持不变.在相应的体材料样品中则没有观察到此现象.通过对各样品的发射光谱，激发光谱，X射线衍射图谱，透射电镜(TEM)照片和荧光衰减曲线的研究，分析了引起纳米样品荧光强度变化的原因是由于Ag离子与表面悬键氧结合，从而使这一无辐射通道阻断，使发光中心Eu³⁺的量子效率提高；Ag⁺的引入所带来的另一个效应是使激发更为有效.这两方面原因使发光效率得到了提高.     

节能灯用BaMgAl10O17:Eu2+,Mn2+荧光粉的劣化机理研究

对节能灯用BaMgAl₁₀O₁₇: Eu²⁺,Mn²⁺荧光粉的热劣化和紫外辐照劣化机理进行了对比研究. 发现热处理和紫外辐照处理均对BaMgAl₁₀O₁₇: Eu²⁺,Mn²⁺产生明显的发光劣化作用. 研究结果表明：热劣化主要涉及到Eu²⁺ 的氧化及其格位偏移, 而紫外辐照劣化与上述过程无关. 紫外辐照劣化主要源自高能紫外辐照使Eu²⁺ 处于更加不稳定的状态, 从而降低Eu²⁺ 的直接吸收和发射强度.     

白光LED用LiSrBO3∶Sm3+材料的光谱特性

采用固相法制备了一种新型的白光LED用LiSrBO₃∶Sm³⁺红色发光材料,并研究了材料的光谱特性.材料的激发与发射光谱显示其能够被404 nm近紫外光激发,发射599 nm红光,很好的符合近紫外光激发下白光LED的需要.研究了Sm³⁺浓度对材料发射强度的影响,发现Sm³⁺浓度为3 mol%时,强度最大.添加Na⁺或K⁺也可提高LiSrBO₃∶Sm³⁺材料的发射强度.     

Dy3+/Nd3+掺杂对Sr4Al14O25:Eu2+陷阱能级的影响

采用高温固相法合成了Sr₄Al₁₄O₂₅: Eu²⁺,Sr₄Al₁₄O₂₅: Eu²⁺,Dy³⁺和Sr₄Al₁₄O₂₅: Eu²⁺,Nd³⁺材料,研究了Dy³⁺或Nd     

Excitation-energy transfer in infrared -stimulable CaS doubly doped with Eu and Sm

The photoluminescence emission (PLE) mapping and infrared-stimulated luminescence (ISL) spectra of CaS:Eu,Sm demonstrated that Eu is formed in Eu²⁺ as a luminescent centre, whereas Sm is formed in Sm³⁺ as an electron-trapping centre by replacing Ca²⁺ in the CaS host lattice. It was found that electron trapping occurred in the photoluminescence excitation (PLX) process. A series of concentrations of Eu with a fixed Sm concentration and a series of concentrations of Sm with a fixed Eu concentration in doubly doped CaS:Eu,Sm were studied by the time-related PLE of Eu²⁺ in the PLX process. According to the electronic energy level(s) of Eu²⁺ and Sm³⁺, excitation-energy transfer is realized by translocation of excited electrons from Eu²⁺ to Sm³⁺, causing simultaneous ionization of Eu²⁺ (leaving Eu³⁺) and capture of excited electrons at Sm³⁺ (forming Sm²⁺). ISL is then produced due to the energy released from recombination of de-trapped electrons from the occupied electron-trapping sites (Sm²⁺) and the previously ionized luminescent centres (Eu³⁺) under infrared irradiation. PACS 78.55.-m; 78.45.+h; 78.55.Et     

Study on relationship of luminescence in CaS:Eu,Sm and dopants concentration

In order to study different characteristic luminescence of Eu²⁺ and Sm³⁺, delayed photoluminescence (DPL) and infrared stimulated luminescence (ISL) spectra of CaS doped with europium and samarium have been investigated. The influence of Eu and Sm concentration on luminescence of Eu²⁺ in photoluminescence (PL) and ISL was respectively studied. It was found that, at low doping levels, PL emission intensity of Eu²⁺ increased linearly with increment of Eu, while decreased linearly with increment of Sm. However, further increment of Eu and Sm in CaS:Eu,Sm could not increase either the luminescent centres of Eu²⁺ or electron trapping sites of Sm³⁺. Different local environment of Eu²⁺ and Sm³⁺ in the lattice position is thought to be the cause of all observed luminescence phenomena. Finally, the maximum emission in ISL was obtained at 1000 ppm europium and 750 ppm samarium.     

Afterglow mechanism and thermoluminescence of red-emitting CaS:Eu,Pr phosphor with incorporated Li ion upon visible light irradiation

This paper reports on the afterglow mechanism and thermoluminescence (TL) of a red-emitting CaS:Eu²⁺,Pr³⁺ phosphor with incorporated Li⁺ ion upon irradiation by visible light (D₆₅ lamp). In the TL glow curve of the CaS:Eu²⁺,Pr³⁺ phosphor, a TL peak was observed near 120 °C. The luminescence center of the CaS:Eu²⁺,Pr³⁺ phosphor was the Eu²⁺ ion and the trap depth of the CaS:Eu²⁺,Pr³⁺ phosphor with the cation vacancy (Trap 1) which formed by incorporation of the Pr³⁺ ion was 0.202 eV. A cation vacancy (Trap 2) was formed by incorporation of the Li⁺ ion in the CaS:Eu²⁺,Pr³⁺ phosphor. In the TL glow curve of the CaS:Eu²⁺,Pr³⁺ phosphor with incorporated Li⁺ ion, two TL peaks were observed near 120 and 200 °C. The TL luminance of the CaS:Eu²⁺,Pr³⁺ phosphor with incorporated Li⁺ ion increased with an increase in the initial Li/Ca atomic ratio. The two TL peaks moved to the high-temperature side with an increase in heating rate. The cation vacancy (Trap 2) calculated from the Hoogenstraaten method was 0.118 eV. The afterglow time of the CaS:Eu²⁺,Pr³⁺ phosphor with incorporated Li⁺ ion was prolonged by generation of a shallow trap.     

Time-related luminescence spectroscopic investigation of electron trapping and recombination in infrared stimulated luminescence

Infrared stimulated luminescence (ISL) occurred in CaS:Eu,Sm due to formation of luminescent centres Eu²⁺ and electron trapping centres Sm³⁺. The electron trapping centres Sm³⁺ became occupied (forming Sm²⁺ by trapping excited electrons) in photoluminescence (PL) excitation (PLX) process causing simultaneous ionization of luminescent centres Eu²⁺ (leaving Eu³⁺ by losing an electron or capturing a hole). In this paper, the electron trapping in PLX and the recombination in ISL were examined by the time-related PL and ISL spectra of CaS:Eu,Sm. The spectroscopic evidence confirmed that the ISL in CaS:Eu,Sm was produced due to recombination of de-trapped electrons and previously ionized luminescent centres (Eu³⁺). It was believed that the electron trapping occurred concurrently as occurrence of the PL of Eu²⁺ in PLX process. However, the recombination of de-trapped electrons and previously ionized luminescent centres took about 10 s or even more to occur after infrared irradiation. PACS 78.55.-m; 78.45.+h     

农用红蓝转光液的性能

CaS:Cu⁺,Eu²⁺荧光粉添加到高分子溶液中配成转光液,喷涂后自然条件下干燥成膜,测试了薄膜的荧光光谱、透光率、荧光抗衰减性能。结果表明,转光液所成薄膜荧光光谱与其添加的荧光粉光谱一致.具有吸收紫外光发射432nm蓝光和648nm红光,吸收绿光发射648nm红光的作用,转光行为有利于植物光合作用。薄膜可见光区透光率在75%以上,荧光抗衰减性能好。     

Luminescent features of sol–gel derived rare-earth multi-doped oxyfluoride nano-structured phosphors for white LED application

Rare-earth doped oxyfluoride 75SiO₂:25PbF₂ nano-structured phosphors for white-light-emitting diodes were synthesized by thermal treatment of precursor sol–gel derived glasses. Room temperature luminescence features of Eu³⁺, Sm³⁺, Tb³⁺, Eu³⁺/Tb³⁺, and Sm³⁺/Tb³⁺ ions incorporated into low-phonon-energy PbF₂ nanocrystals dispersed in the aluminosilicate glass matrix and excited with UV light emitting diode were investigated. The luminescence spectra exhibited strong emission signals in the red (600, 610, 625, and 646 nm), green (548 and 560 nm), and blue (485 nm) wavelength regions. White-light emission was observed in Sm/Tb and Eu/Tb double-doped activated phosphors employing UV-LED excitation at 395 nm. The dependence of the luminescence emission intensities upon annealing temperature and rare-earth concentration was also examined. The results indicated that there exist optimum annealing temperature and activator ion concentration in order to obtain intense visible emission light with high color rendering index. The study suggests that the nanocomposite phosphor based upon 75SiO₂:25PbF₂ host herein reported is a promising contender for white-light LED applications.     

存储型上转换发光材料CaS:Eu,Sm的发光机理研究

采用低温燃烧合成(LCS)法制备了存储型上转换发光材料CaS∶Eu,Sm,并对其上转换发光机理进行了研究。研究表明:样品的激发光谱位于200~600nm之间,紫外或可见光均可有效地激发该材料来完成充能过程,且可见光激发占优势;样品的红外响应光谱范围为800~1600nm,由辅助激活离子Sm所形成的劈裂的深陷阱能级是该材料具有宽频谱红外转换特性的根本原因;样品的热释光谱高温峰值位于351.02℃,计算得到的陷阱能级深度为0.82eV,深度适中,利于激发能的储存和上转换发光的产生。     

Effect of local environment and Sm-codoping on the luminescence properties in the Eu-doped potassium tungstate phosphor for white LEDS

The luminescence properties of Eu³⁺- and Sm³⁺-doped potassium tungstate phosphors were investigated. The K_4−3(x+y) (WO₄)₂:Eu_x³⁺,Sm_y³⁺ phosphor was produced by solid-state reactions, followed by re-firing with a flux. The phosphor showed a strong absorption in the near-UV to green region due to 4f-4f electron transitions of the Eu³⁺ and Sm³⁺ ions, generating a red emission. The excitation spectrum could be adjusted by Sm³⁺-codoping. A small amount of Sm³⁺, acting as a sensitizer, increased the energy absorption peak at 405 nm. The crystal structure and local environment around the Eu³⁺ ions were determined using the Rietveld method. The crystal structure of this phosphor was determined to be monoclinic with a space group of C2/c. The small Eu-0 distance in the crystal led to high energy-level splitting at the ⁵D₀→⁷F₂ transition of the Eu³⁺ ions, resulting in more emission peaks.     

存储型上转换发光材料CaS∶Eu,Sm的发光机理研究

采用低温燃烧合成(LCS)法制备了存储型上转换发光材料CaS∶Eu,Sm,并对其上转换发光机理进行了研究.研究表明:样品的激发光谱位于200～600nm之间,紫外或可见光均可有效地激发该材料来完成充能过程,且可见光激发占优势;样品的红外响应光谱范围为800～1600nm,由辅助激活离子Sm所形成的劈裂的深陷阱能级是该材料具有宽频谱红外转换特性的根本原因;样品的热释光谱高温峰值位于351.02℃,计算得到的陷阱能级深度为0.82eV,深度适中,利于激发能的储存和上转换发光的产生.