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1.
Optical absorption spectra of single crystals of the ferromagnetic semiconductor VBO3 are studied at high pressures up to 70 GPa achieved in a diamond-anvil cell. An electronic transition accompanied by sharp changes in the optical parameters and a decrease in the optical gap from E 0 = 3.02 eV to 2.25 eV is found at the pressure P C ~ 30 GPa. The gap does not disappear in the high-pressure phase and its value becomes typical of semiconductors. This is indicative of a semiconductor-semiconductor transition. The transition to the metallic state may occur at the critical pressure P met ≈ 290 GPa.  相似文献   

2.
3.
X-ray absorption, resonant X-ray emission, and X-ray photoelectron spectroscopical methods have been applied for the study of the electronic structure of defective lithium cobaltites Li x CoO2 (0.6≤x≤1.0). Resonant O K α X-ray emission spectra of LiCoO2 showed localized excitonic states due to a dd transition between occupied and unoccupied Co 3d states. On the base of measurements of Co 3s X-ray photoelectron, Co 2p, and O 1s X-ray absorption spectra, it was established that in defective cobaltites the electronic holes are localized mainly in O 2p states. An evidence of phase separation in Li x CoO2 has been found. It was shown that the semiconductor-to-metal transition in Li x CoO2 (x<0.76) at about 160 K is not accompanied by changes in the Co 3d electronic configuration which remains 3d 6.  相似文献   

4.
The optical spectra and the second-harmonic generation (SHG) are studied in a noncentrosymmetric GdFe3(BO3)4 magnet. In the region of weak absorption (α~20–400 cm?1) below ~3 eV, three absorption bands are distinguished, which can be unambiguously assigned to forbidden electronic transitions from the ground 6A1 state of the Fe3+ ion to its excited states 4T1(~1.4 eV), 4T2(~2 eV), and 4A1, 4E(~2.8 eV). Intense absorption begins in the region above 3 eV (α~2–4×105 cm?1), where two bands at ~4.0 and 4.8 eV are observed, which are caused by allowed electric dipole charge-transfer transitions. The spectral features of SHG in the 1.2–3.0-eV region are explained by a change in the SHG efficiency caused by a change in the phase mismatch. It is shown that in the weak absorption region, phase matching can be achieved for SHG.  相似文献   

5.
Thin film iron-tetracyanoethylene Fe(TCNE) x , x∼2, as determined by photoelectron spectroscopy, was grown in situ under ultra-high vacuum conditions using a recently developed physical vapor deposition-based technique for fabrication of oxygen- and precursor-free organic-based molecular magnets. Photoelectron spectroscopy results show no spurious trace elements in the films, and the iron is of Fe2+ valency. The highest occupied molecular orbital of Fe(TCNE) x is located at ∼1.7 eV vs. Fermi level and is derived mainly from the TCNE singly occupied molecular orbital according to photoelectron spectroscopy and resonant photoelectron spectroscopy results. The Fe(3d)-derived states appear at higher binding energy, ∼4.5 eV, which is in contrast to V(TCNE)2 where the highest occupied molecular orbital is mainly derived from V(3d) states. Fitting ligand field multiplet and charge transfer multiplet calculations to the Fe L-edge near edge X-ray absorption fine structure spectrum yields a high-spin Fe2+ (3d6) configuration with a crystal field parameter 10Dq∼0.6 eV for the Fe(TCNE) x system. We propose that the significantly weaker Fe-TCNE ligand interaction as compared to the room temperature magnet V(TCNE)2 (10Dq∼2.3 eV) is a strongly contributing factor to the substantially lower magnetic ordering temperature (T C ) seen for Fe(TCNE) x -type magnets.  相似文献   

6.
The anisotropy of the optical properties of a single crystal of the hexagonal manganite HoMnO3 has been investigated by spectroscopic ellipsometry in the spectral range 0.6–5.0 eV. It has been demonstrated that the optical absorption edge for the polarization Ec is determined by the intense narrow transition O(2p) → Mn(3d) centered at 1.5 eV, whereas this transition for the polarization Ec is strongly suppressed and shifted toward higher energies by 0.2 eV. It has been revealed that, at the temperature T = 293 K, the spectra for both polarizations Ec and Ec exhibit a broad absorption band centered at ∼2.4 eV, which was earlier observed in nonlinear spectra during optical second harmonic generation.  相似文献   

7.
This paper reports on a study of the luminescence emitted by Li6Gd(BO3)3: Ce3+ crystals under selective photoexcitation to lower excited states of the host ion Gd3+ and impurity ion Ce3+ within the 100–500-K temperature interval, where the mechanisms of migration and relaxation of electronic excitation energy have been shown to undergo noticeable changes. The monotonic 10–15-fold increase in intensity of the luminescence band at 3.97 eV has been explained within a model describing two competing processes, namely, migration of electronic excitation energy over chains of Gd3+ ions and vibrational energy relaxation between the 6 I j and 6 P j levels. It has been shown that radiative transitions in Ce3+ ions from the lower excited state 5d 1 to 2 F 5/2 and 2 F 7/2 levels of the ground state produce two photoluminescence bands, at 2.08 and 2.38 eV (Ce1 center) and 2.88 and 3.13 eV (Ce2 center). Possible models of the Ce1 and Ce2 luminescence centers have been discussed.  相似文献   

8.
Single crystals of the Cu x TiSe2 compound with x = 0.05, 0.09, and 0.33 have been grown. Resonance photoelectron Cu 3p-3d and 2d-3d spectra of the valence bands, the spectra of the core levels, and the L absorption spectra for titanium and copper have been obtained. It is shown that the degree of oxidation of titanium atoms is +4 and the state of copper atoms is close to the state of free copper ions. It is found that the spectra of the valence bands obtained under the Cu 3p and 2p resonance conditions radically differ. For the spectra in the Cu 2p excitation regime, several bands corresponding to different decay channels of the excited state are observed. According to calculations of the density of states, the 3d states of copper are filled incompletely; the occupancy of the 3d band of copper is 9.5 electrons per atom.  相似文献   

9.
1 at % Pr3+-doped Y2O3 single-crystal fibers were prepared using a laser-heated pedestal growth method. The emission and excitation spectra of the fibers were measured. The emissions of 4f-4f transitions from 1 D 2 to the 3 H 4 and 3 H 5 states are found at 620 and 720 nm, respectively. The 3 P 2, 3 P 1, 1 I 6, and 3 P 0 4f-4f absorptions are observed at 456, 472, 482, and 492 nm, respectively. A 4f-5d absorption band is detected at 288 nm. Photoconductivity measurements show that the 4f-5f transition of Pr3+ around 285 nm produces a direct photocurrent. Taking the onset of photocurrent to be at 320 nm, the ground state of Pr3+ is determined at 1.7 eV above the valence band of the host. The text was submitted by the authors in English.  相似文献   

10.
Optical absorption spectra of trigonal crystal TbFe3(BO3)4 have been studied in the region of 7F65D4 transition in Tb3+ ion depending on temperature (2–220 K) and on magnetic field (0–60 kOe). Splitting of the Tb3+ excited states, both under the influence of the external magnetic field and effective exchange field of the Fe-sublattice, have been determined. Landé factors of the excited states have been found. Stepwise splitting of one of the absorption lines has been discovered in the region of the Fe-sublattice magnetic ordering temperature. This is shown to be due to the abrupt change of equilibrium geometry of the local Tb3+ ion environment only in the excited state of the Tb3+ ion. In general, the magnetic ordering is accompanied by temperature variations of the Tb3+ local environment in the excited states. The crystal field splitting components have been identified. In particular, it has been shown that the ground state (in D 3 symmetry approximation) consists of two close singlet states of A 1 and A 2 type, which are split and magnetized by effective exchange field of the Fe-sublattice. Orientations of magnetic moments of the excited electronic states relative to that of the ground state have been experimentally determined in the magnetically ordered state of the crystal. A pronounced shift of one of absorption lines has been observed in the vicinity of the TbFe3(BO3)4 structural phase transition. The temperature interval of coexistence of the phases is about 3 K.  相似文献   

11.
A number of new peaks close to the previously predicted energies of virtual electronic states [S.G. Ovchinnikov and V.N. Zabluda, Zh. Eksp. Teor. Fiz. 125, 150 (2004) [JETP 98, 135 (2004)]] have been observed in the absorption spectra of FeBO3 single crystals in the infrared range. The 0.27-eV peak was absent in the scheme presented in the work cited above and, to explain it, a multielectron theory taking into account the 2 T 2 low-spin term of the Fe3+ ion has been developed.  相似文献   

12.
The electronic spectra and relative permittivity of ultrathin (1–3 QL) films of Bi2Se3 topological insulator have been calculated by the density functional theory. The calculated spectra exhibit a characteristic feature: the range of 0.0–0.9 eV below the Fermi level contains two doubly degenerate valence bands (“U-bands”), which are geometrically congruent to low-lying spectral branches in the conduction band. It has been shown that the saturation of optical absorption can result in a significant rearrangement of the electronic structure and properties in the near infrared spectral range in the considered film. In particular, the semiconductor (in the absence of interaction with light) type of conductivity of the film can be changed to the metallic type of conductivity strongly nonlinear in the intensity of light.  相似文献   

13.
It has been shown using atomic-force microscopy that the PbI2 impurity is embedded in the CdI2 crystal lattice in the form of nanocrystalline inclusions. The model of a high-energy cation exciton related to the 3 P 2 state of a free Pb2+ ion has been considered for the impurity absorption (excitation) band at 3.23 eV. The resonance narrow photoluminescence bands with the split absorption band at 3.12 and 3.20 eV have been compared with the emission of a free Frenkel exciton. It has been demonstrated that, in the temperature range 25–45 K, there arises a self-trapped exciton state, and the main role in its formation is played by the bending vibrations of the CdI2 crystal lattice. The potential barrier separating the self-trapped state from the free exciton is 23 meV. The photoluminescence band at 2.4 eV is assigned to the emission of the self-trapped high-energy cation exciton of PbI2 in the CdI2 crystal lattice.  相似文献   

14.
IR absorption spectra of monoisotopic 28SiH4 and 76GeH4 are studied in Ar and N2 matrices at 10 K. It is shown that the absorption spectra of silane and germane are similar in the regions of the stretching ν3 and bending ν4 vibrations. Four groups of bands can be separated out in the spectra of each molecule: (1) narrow bands characteristic of the matrix isolation studies, (2) broad bands, (3) diffuse absorption with a large value of the spectral moment M 2* the intensity of which increases upon annealing, and (4) bands of dimers the intensity of which increases quadratically with concentration. The spectra of 28SiH4 and 76GeH4 in nitrogen matrices contain a triplet in the stretching region and a doublet in the bending region, which is explained by the change in the molecular symmetry from T d to C 3V on passage from the gas phase to solid nitrogen.  相似文献   

15.
The short-wave transmission spectrum of Na0.4Lu0.6F2.2 with the visible/ultraviolet transmission edge of 8 eV was studied. Absorption spectra of the 4f—5d transitions of the Ce3+ ion in the region of 4–8 eV were studied in Ce3+-doped Na0.4Lu0.6F2.2 single crystals. Luminescence spectra in the ultraviolet and visible spectral regions, luminescence decay kinetics and reflection and luminescence excitation spectra in the visible/ultraviolet and ultraviolet regions (4–20 eV) were investigated at helium and room temperatures.  相似文献   

16.
The electronic structure, densities of states and optical properties of the stable orthorhombic BaSi2 have been calculated using the first-principle density function theory and pseudopotential method. The results show that BaSi2 is an indirect semiconductor with the band gap of 1.086 eV, the valence bands of BaSi2 are mainly composed of Si 3p, 3s and Ba 5d, and the conduction bands are mainly composed of Ba 6s, 5d as well as Si 3p. The static dielectric function ɛ 1(0) is 11.17, the reflectivity n 0 is 3.35, and the biggest peak of the absorption coefficient is 2.15×105 cm−1. Supported by the National Natural Science Foundation of China (Grant Nos. 60566001 and 60766002), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050657003), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. (2005)383), the Specialized Fund of Nomarch for Excellent Talent of Science and Technology of Guizhou Province (Grant No. Z053114), the Scientific and Technological Projects for the Returned Overseas of Guizhou Province (Grant No. (2004)03), and the Top Talent’s Scientific Research Project of Organization Department of Guizhou Province (Grant No. Z053123)  相似文献   

17.
Spectral and kinetic characteristics of the luminescence and luminescence excitation spectra of polycrystalline SrB4O7:Pr (1%) and SrB6O10:Pr (1%) samples are studied at 150–170 K. The samples show an intense luminescence band in the vicinity of 405 nm (1 S 01 I 6 transitions of Pr3+) and shorter wavelength bands also assigned to transitions from the 1 S 0 level. The main luminescence decay constant is ~2×10?7 s. The excitation spectra of the 1 S 0 luminescence in these crystals are significantly different. The SrB4O7:Pr crystal shows three well-resolved bands at 6.14, 6.55, and 6.91 eV in the region of the 4f 2→4f 15d transitions and a complex structure in the region of interband transitions (7.1–20 eV), whereas the SrB6O10:Pr crystal shows a weakly structured band at 6.31 eV and no excitation in the region of the interband transitions. The physical mechanisms that may be responsible for the observed features of the spectra are discussed.  相似文献   

18.
X-ray diffraction and X-ray absorption near edge structure (XANES) spectra have been measured at the Со K-edge and Gd L 3-edge in GdCoO3 and Gd0.4Sr0.6CoO2.85 cobaltites. The effect of Sr substitution on the crystal structure and electronic and magnetic states of Co3+ ions in a Gd0.4Sr0.6CoO2.85 single crystal has been analyzed. The XANES measurements at the Co K-edge have not showed a noticeable shift of the absorption edge with an increase in the concentration of Sr. This indicates that the effective valence of cobalt does not change. An increase in the intensity of absorption at the Gd L 3-edge is due to an increase in the degree of hybridization of the Gd(5d) and O(2p) states. The effect of hole doping on the magnetic properties results in the appearance of the ferromagnetic component and in a significant increase in the magnetic moment.  相似文献   

19.
The electronic structure and specific features of the structure of nonstoichiometric cobaltite Li x Na y CoO2 (x = 0.42, y = 0.36) have been studied comprehensively. The calculated multiplet for the lowspin state of the Co3+ ion agrees with the experimental spectra. It has been established using X-ray absorption spectra measured in the total photoelectric effect yield and total fluorescence yield modes that the Li x Na y CoO2 cobaltite is stoichiometric with respect to the alkali metal near its surface and is defective inside. It has been demonstrated that the charge compensation in the case of an alkali metal deficit in LixNayCoO2 is due to holes in O 2p states.  相似文献   

20.
This paper reports on a study of the dynamics of electronic excitations in KBe2BO3F2 (KBBF) crystals by low-temperature luminescent vacuum ultraviolet spectroscopy with nanosecond time resolution under photoexcitation by synchrotron radiation. The first data have been obtained on the kinetics of photoluminescence (PL) decay, time-resolved PL spectra, time-resolved PL excitation spectra, and reflection spectra at 7 K; the estimation has been performed for the band gap E g = 10.6−11.0 eV; the predominantly excitonic mechanism for PL excitation at 3.88 eV has been identified; and defect luminescence bands at 3.03 and 4.30 eV have been revealed. The channels of generation and decay of electronic excitations in KBBF crystals have been discussed.  相似文献   

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