Temperature dependent photoluminescence down to 4.2 K in EuTFC

The temperature dependence of photoluminescence in Europium tris[3-(trifluoro-methylhydroxymethylene)-(+)-camphorate] (EuTFC) embedded in polymer films has been examined from 40 K down to 4.2 K with the goal of preparing sensor films for low-temperature thermal imaging. The behavior of EuTFC showed significant difference when based on polystyrene compared to poly(n-alkyl methacrylate)s. In poly(n-alkyl methacrylate)s prepared by standard methods for imaging applications, the photoluminescence is fully saturated below 30 K, whereas in polystyrene films there is a strong temperature dependence even down to 4.2 K. By optimizing the preparation procedure for films made of poly(butyl methacrylate) (PBMA) and poly(methyl methacrylate), also these polymers became very sensitive down to liquid helium temperature. The maximum temperature sensitivity of EuTFC in PBMA is found to be 1.0%/K at 4.2 K. The problem of delamination and cracking of the polymer film at cryogenic temperature is also avoided by the special preparation method.     

Structural modifications of diamond like carbon films induced by MeV nitrogen ion irradiation

Diamond-like carbon (DLC) films were deposited on Si(1 0 0) substrates using plasma deposition technique. The deposited films were irradiated using 2 MeV N⁺ ions at fluences of 1×10¹⁴, 1×10¹⁵ and 5×10¹⁵ ions/cm². Samples have been characterized by using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM). Analysis of Raman spectra shows a gradual shift of both D and G band peaks towards higher frequencies along with an increase of the intensity ratio, I(D)/I(G), with increasing ion fluence in irradiation. These results are consistent with an increase of sp² bonding. XPS results also show a monotonic increase of sp²/sp³ hybridization ratio with increasing ion fluence. Plan view TEM images show the formation of clusters in the irradiated DLC films. HRTEM micrographs from the samples irradiated at a fluence of 5×10¹⁵ ions/cm² show the lattice image with an average interplanar spacing of 0.34 nm, revealing that the clusters are graphite clusters. The crystallographic planes in these clusters are somewhat distorted compared to the perfect graphite structure.     

Growth, coalescence, and electrical resistivity of thin Pt films grown by dc magnetron sputtering on SiO2

Ultra thin platinum films were grown by dc magnetron sputtering on thermally oxidized Si (1 0 0) substrates. The electrical resistance of the films was monitored in situ during growth. The coalescence thickness was determined for various growth temperatures and found to increase from 1.1 nm for films grown at room temperature to 3.3 nm for films grown at 400 °C. A continuous film was formed at a thickness of 2.9 nm at room temperature and 7.5 nm at 400 °C. The room temperature electrical resistivity decreases with increased growth temperature, while the in-plain grain size and the surface roughness, measured with a scanning tunneling microscope (STM), increase. Furthermore, the temperature dependence of the film electrical resistance was explored at various stages during growth.     

MOCVD growth of spherical aggregates of SiC nanocrystallites

Spherical aggregates of SiC nanocrystallites can be grown in addition to SiC nanowires via metal organic chemical vapor deposition using methylvinyldichlorosilane as a source gas and Ni catalyst by controlling the growth temperature and the pressure of the source gas. Electron microscopy observations show that the aggregates are typically 300 nm in diameter, which consist of SiC nanocrystallites of about 5 nm in diameter. Electron diffraction reveals that the nanocrystallites have the 3C structure.     

Dynamics of electrons and holes at surfaces

We present ab initio calculation results for electron-phonon (e-ph) contribution to hole lifetime broadening of the surface state on Al(0 0 1). We show that e-ph coupling in this state is significantly stronger than in bulk Al at the Fermi level. It makes the e-ph decay channel very important in the formation of the hole decay in the surface state at . We also present the results for e-e lifetime broadening in a quantum-well state in 1 ML K/Cu(1 1 1). We show that this contribution is not negligible and is much larger than that in a surface state on Ag(1 1 1).     

Co-induced nano-structures on Si(1 1 1) surface

The interaction of cobalt atoms with silicon (1 1 1) surface has been investigated by means of scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Besides the Co silicide islands, we have successfully distinguished two inequivalent Co-induced reconstructions on Si(1 1 1) surface. Our high-resolution STM images provide some structural properties of the two different derived phases. Both of the two phases seem to form islands with single domain. The new findings will help us to understand the early stage of Co silicide formations.     

Quantum size effects of Pb overlayers at high coverages

We have studied Pb thin films as a function of the thickness up to 60 monolayers (MLs) using ab initio first principles and model calculations. Magic heights corresponding to a modulated oscillatory pattern of the energy of Pb(1 1 1) films have been measured up to about 30 MLs. We demonstrate that this behaviour continues even for higher thickness due to an extra second modulation pattern in the energetics of the metal film as a function of the number of atomic layers. The origin of this second modulation is the nesting of two close values of the Fermi wavelength in the (1 1 1) direction.     

Surface restructuring process on a Ag/Ge(0 0 1) surface studied by photoelectron spectroscopy

The atomic structure and charge distribution of Ag adsorbed Ge(0 0 1) surfaces have been investigated by means of Ge 3d core- and Ag 4d core-levels photoelectron spectroscopy. A mono-atomic layer of Ag was deposited on the clean Ge(0 0 1) c(4×2) surface at 80 K. The Ge 3d spectrum measured at 80 K was deconvoluted into two surface components, which is consistent with the previously proposed Ag ad-dimer model. After annealing the surface at room temperature, the rearrangement of the charge distribution was revealed to include electron transfer from Ge to Ag in conjunction with the surface restructuring process by the annealing.     

Observation of internal-conversion electrons induced by inelastic nuclear resonant scattering

Measurements of the internal-conversion electron emission due to the inelastic nuclear resonant excitation are reported. thin films of 20 and 1.3 nm thickness were deposited on Si(1 1 1), and the internal-conversion electrons were measured as a function of the photon energy. From the inelastic part of the spectra, the phonon density of states was obtained. Whereas the phonon density of states of 20-nm thick film resembles that of bulk -Fe, the 1.3-nm thick film revealed an obvious softening of the acoustic mode.     

Fe monolayers on InAs(0 0 1): An in situ study of surface, interface and volume magnetic anisotropy

The magnetic anisotropy of epitaxial Fe films with thicknesses in the range of 2-142 monolayers (ML) grown on {4×2} reconstructed InAs(0 0 1) was investigated by in situ ferromagnetic resonance. The easy magnetization direction was found to be parallel to the -direction for Fe films below 4 ML, while it rotates by 45^° toward the -direction. It is observed that both surface-interface and volume contribution to the perpendicular anisotropy favor an easy axis perpendicular to the film plane. The cubic surface-interface anisotropy is relatively large with easy axes along -directions in contrast to the volume contribution which favors easy axes along the -directions. The volume contribution is found to be larger than the Fe bulk cubic anisotropy. A thickness independent uniaxial anisotropy has been found in films with a thickness of 2 up to 142 ML.     

Aluminium adsorption on Ir(1 1 1) at a quarter monolayer coverage: A first-principles study

We present an ab initio density-functional study for aluminium adsorption on Ir(1 1 1) at high symmetry sites, namely, the fcc-, hcp-hollow, top and bridge sites. In each case, we calculate the atomic geometry, average binding energy, work function, and surface dipole moment at the coverage of 0.25 monolayer. We find the favourable structure to be Al at threefold hcp-hollow site, with a corresponding binding energy of 4.46 eV. We present and compare the electronic properties of the two lowest energy structures, i.e., at the threefold hollow sites and discuss the nature of the Al-Ir bond and binding site preference. In particular, we observe a large hybridization of Al-3s, 3p and Ir-5d states near Fermi level, forming an inter-metallic bonds. This results in a significant electron transfer from the Al atoms to the Ir(1 1 1) substrate, inducing an outward pointing surface dipole moment and a large decrease in the work function of 1.69 eV for Al in the hcp-hollow site. Compared to the fcc-hollow site, adsorption in the hcp-hollow site results in a lower density-of-states at the Fermi level, as well as a greater hybridization in the bonding states.     

The first measured Mn I Stark widths

The shapes of the astrophysically interesting neutral manganese (Mn I) resonance spectral lines (403.075, 403.306, 403.448, 279.481, 279.826 and 280.108 nm) have been observed together with six other prominent Mn I lines in the laboratory helium plasma at a 47 000 K electron temperature and electron density. With these plasma parameters the Stark broadening has been found to be an important mechanism in the Mn I line shape formation. Our measured Mn I Stark widths (W) are the first data in the literature. Stark widths are compared with line hyperfine structure splittings (Δ_hfs). At above mentioned helium plasma conditions the line broadening due to hyperfine structure splitting of the lines is less than that of the Stark and Doppler broadening for the case of the Mn I lines under investigation. We estimate that at electron densities below and electron temperatures below 4000 K the components in the hyperfine structure play an important role in the mentioned Mn I line shape formation.     

Nanostructural and surface morphological evolution of chemically sprayed SnO2 thin films

Physical properties of a nanocrystalline thin film is greatly influenced by its morphological and structural evolution. We try to understand the transition of SnO₂ thin films from amorphous to nanocrystalline structure with XRD, IR, SEM, AFM and surface profiler studies. A 2D layer like structure resulting from quantum confinement is found for the films prepared at 400 °C. We observed a new IR band at 530 cm⁻¹ that was theoretically predicted and report it for the first time. A correlation of population of defects in SnO₂ films with change in lattice parameters and FWHM of IR bands are reported. The electric and optical properties of the films have been discussed.     

Thickness and temperature dependence of the dynamic magnetic behavior in disordered FePt films

We present in this work an investigation of the magnetic behavior of FePt films as a function of film thickness and thermal treatment. The films have been sputter-deposited on oxidized Si (1 0 0) crystals and are ferromagnetic at room temperature. Using ferromagnetic resonance techniques at 9.5 GHz we have studied a series of four films with a thickness in the range . The resonance spectra of these films were measured at and also above room temperature. The high temperature measurements produce irreversible changes in the samples which depend on the maximum temperature reached during the experiment. For relatively low measuring temperatures () the magnetic properties are generally improved, probably due to the release of stress formed during film fabrication. For larger temperatures () the absorption linewidth gradually broadens and the line could be hardly observed at room temperature if the measuring temperature exceeded . This behavior is due to the partial transformation of the metastable FCC phase to the ordered L1₀ high anisotropy phase. These data are consistent with the results found in samples annealed outside the resonant cavity.     

Electronic structure of dysprosium silicide films grown on a Si(1 1 1) surface

The thickness-dependent electronic structures of Dy silicide films grown on a Si(1 1 1) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1×1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1.0 monolayer and below, and more than five () periodic bands have been observed in thicker films. Taking the () periodic structure of Dy atoms in the submonolayer silicide film into account, the periodicity of the two metallic bands indicate that they mainly originate from the orbitals of Si atoms, which form a (1×1) structure. Of the () periodic bands observed in thick films, four of them are well explained by the folding of the (1×1) bands into a () periodicity. Regarding the other band, the three () periodic bands would originate from the electronic states related to the inner Si layers that form a () structure, and the one observed in the 3.0 ML film only might originate from the electron located at the interface between bulk Si and the Dy silicide film.     

Nanoscale observations of the operational failure for phase-change-type nonvolatile memory devices using Ge2Sb2Te5 chalcogenide thin films

In this study, a phase-change memory device was fabricated and the origin of device failure mode was examined using transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS). Ge₂Sb₂Te₅ (GST) was used as the active phase-change material in the memory device and the active pore size was designed to be 0.5 m. After the programming signals of more than 2×10⁶ cycles were repeatedly applied to the device, the high-resistance memory state (reset) could not be rewritten and the cell resistance was fixed at the low-resistance state (set). Based on TEM and EDS studies, Sb excess and Ge deficiency in the device operating region had a strong effect on device reliability, especially under endurance-demanding conditions. An abnormal segregation and oxidation of Ge also was observed in the region between the device operating and inactive peripheral regions. To guarantee an data endurability of more than 1×10¹⁰ cycles of PRAM, it is very important to develop phase-change materials with more stable compositions and to reduce the current required for programming.     

Elaboration of self-organized magnetic nanoparticles by selective cobalt silicidation

Self-organized magnetic nanoparticles are obtained through selective silicidation of cobalt using a silicon substrate pre-structured with tri-dimensional gold islands as template. On the step bunches array of a vicinal Si(1 1 1) surface, gold deposition results in the formation of nanodroplets aligned along the step bunches. A subsequent cobalt deposition is performed onto this gold islands-covered Si surface, with two silicidation processes investigated: reactive deposition (RD) and solid phase reaction (SPR). The cobalt is converted into a non-magnetic silicide film except where the surface is locally masked by the gold islands, giving rise to cobalt nanomagnets which can be capped by a gold layer. A scanning tunneling microscopy comparative study of RD and SPR processes demonstrates that the former induces strong surface morphology changes while the latter preserves the pristine islands. Magnetic measurements performed with alternating gradient force magnetometry at room temperature are used to demonstrate the presence of ferromagnetic cobalt nanoparticles on SPR-processed samples. These nanomagnets show a clear in-plane anisotropy behavior.     

Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effects

High-κ dielectrics SrZrO₃ were prepared on Ge(0 0 1) substrate using pulse laser deposition, and band alignments and thermal annealing effects were studied with high resolution X-ray photoemission spectroscopy. Valence and conduction band offsets at this interface were measured to be 3.26 eV and 1.77 eV, respectively. Interfacial Ge oxide layers were found at the interface. After annealing at 600 °C, the interfacial Ge oxide layers were eliminated, and the valence band offset increased to 3.50 eV, but the amorphous SrZrO₃ became polycrystalline in the meantime.     

Metallic nanosieves formed by ultra-short-pulse laser ablation

The formation of free-standing gold nanosieves by ablation with ultra-short laser pulses is demonstrated. Macroscopic areas are generated fast and efficiently by the application of a parallel production technique. The technique is based on a lens array formed by self-assembling quartz microspheres on a thin metal foil. The evaporated foils have a final thickness of 400 nm, and the hole spacing is set by the diameter of the microspheres (∼7 m) while the pore size is ∼700 nm. The characteristic spacing of the generated hole structure is verified by an optical diffraction technique.     

Stabilization of the pentagonal surface of the icosahedral AlPdMn quasicrystal by controlled Si absorption

The Debye-temperature of the pentagonal surface of the icosahedral AlPdMn quasicrystal (QC) is measured by means of low-energy electron diffraction after the absorption of different amounts of Si. We observe an increase of the surface Debye-temperature from 300±7 K for the freshly prepared surface to 330±7 K after the absorption of 60-Å Si. Because the quasicrystalline order persists at the surface in spite of the diffusion of Si into the substrate, we suggest that the diffusion is dominated by a vacancy-mediated process.