Fabrication of metal nano-structures using anodic alumina membranes grown in phosphoric acid solution: Tailoring template morphology

The influence of experimental parameters on the morphology of the porous structure and on the formation kinetics has been investigated for anodic alumina membranes (AAM) grown in aqueous H₃PO₄ at 160 V. It was found that pore aspect ratio and membrane porosity on the solution-side surface are influenced by tensiostatic charge, bath temperature and the presence of Al³⁺ ions in solution. Morphological and kinetic data, recorded in different conditions, give useful information on the growth mechanism of pore channels in phosphoric acid solution.Nickel nano-structures have been fabricated using AAM as template. Electroless deposition, performed by adding the reducing agent to a suitable bath in several steps, resulted in the formation of short metal nanotubes (about 5 μm long) in the upper part of the channels. Long Ni nanowires (up to 25 μm) with aspect ratio higher than 100 were obtained by pulsed unipolar electrodeposition from a Watt bath. In this case, both the influence of some experimental parameters on the nanowires growth and the fast current transients during the electrodeposition steps were analyzed.     

BiOCl nanowire with hierarchical structure and its Raman features

BiOCl is a promising V-VI-VII-compound semiconductor with excellent optical and electrical properties, and has great potential applications in photo-catalysis, photoelectric, etc. We successfully synthesize BiOCl nanowire with a hierarchical structure by combining wet etch (top-down) with liquid phase crystal growth (bottom-up) process, opening a novel method to construct ordered bismuth-based nanostructures. The morphology and lattice structures of Bi nanowires, β-Bi₂O₃ nanowires and BiOCl nanowires with the hierarchical structure are investigated by scanning electron microscope (SEM) and transition electron microscope (TEM). The formation mechanism of such ordered BiOCl hierarchical structure is considered to mainly originate from the highly preferred growth, which is governed by the lattice match between (1 1 0) facet of BiOCl and (2 2 0) or (0 0 2) facet of β-Bi₂O₃. A schematic model is also illustrated to depict the formation process of the ordered BiOCl hierarchical structure. In addition, Raman properties of the BiOCl nanowire with the hierarchical structure are investigated deeply.     

Synthesis of GaN nanowires by Tb catalysis

Rare earth metal seed Tb was employed as catalyst for the growth of GaN wires. GaN nanowires were synthesized successfully through ammoniating Ga₂O₃/Tb films sputtered on Si(1 1 1) substrates. The samples characterization by X-ray diffraction and Fourier transform infrared indicated that the nanowires are constituted of hexagonal wurtzite GaN. Scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy showed that the samples are single-crystal GaN nanowire structures. The growth mechanism of the GaN nanowires is discussed.     

Coating formation by plasma electrolytic oxidation on ZC71/SiC/12p-T6 magnesium metal matrix composite

Plasma electrolytic oxidation (PEO) of a ZC71/SiC/12p-T6 magnesium metal matrix composite (MMC) is investigated in relation to coating growth and corrosion behaviour. PEO treatment was undertaken at 350 mA cm⁻² (rms) and 50 Hz with a square waveform in stirred 0.05 M Na₂SiO₃.5H₂O/0.1 M KOH electrolyte. The findings revealed thick, dense oxide coatings, with an average hardness of 3.4 GPa, formed at an average rate of ∼1 μm min⁻¹ for treatment times up to 100 min and ∼0.2 μm min⁻¹ for later times. The coatings are composed mainly of MgO and Mg₂SiO₄, with an increased silicon content in the outer regions, constituting <10% of the coating thickness. SiC particles are incorporated into the coating, with formation of a silicon-rich layer at the particle/coating interface due to exposure to high temperatures during coating formation. The distribution of the particles in the coating indicated growth of new oxide at the metal/coating interface. The corrosion rate of the MMC in 3.5% NaCl is reduced by approximately two orders of magnitude by the PEO treatment.     

Preparation and characterization of CdS/Si coaxial nanowires

CdS/Si coaxial nanowires were fabricated via a simple one-step thermal evaporation of CdS powder in mass scale. Their crystallinities, general morphologies and detailed microstructures were characterized by using X-ray diffraction, scanning electron microscope, transmission electron microscope and Raman spectra. The CdS core crystallizes in a hexagonal wurtzite structure with lattice constants of a=0.4140 nm and c=0.6719 nm, and the Si shell is amorphous. Five Raman peaks from the CdS core were observed. They are 1LO at 305 cm⁻¹, 2LO at 601 cm⁻¹, A₁-TO at 212 cm⁻¹, E₁-TO at 234 cm⁻¹, and E₂ at 252 cm⁻¹. Photoluminescence measurements show that the nanowires have two emission bands around 510 and 590 nm, which originate from the intrinsic transitions of CdS cores and the amorphous Si shells, respectively.     

Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes

The authors report the deposition of Cu₂O onto vertically well aligned ZnO nanowires by DC sputtering. The average length, average diameter and density of these VLS-synthesized ZnO nanowires were 1 μm, 100 nm and 23 wires/μm², respectively. With proper sputtering parameters, the deposited Cu₂O could fill the gaps between the ZnO nanowires with good step coverage to form coaxial p-Cu₂O/n-ZnO nanowires with a rectifying current–voltage characteristic. Furthermore, the fabricated coaxial p-Cu₂O/n-ZnO nanowire photodiodes exhibit reasonably large photocurrent-to-dark-current contrast ratio and the fast responses.     

Synthesis and characterization of β-Ga2O3 nanostructures grown on GaAs substrates

β-Ga₂O₃ nanostructures including nanowires, nanoribbons and nanosheets were synthesized via thermal annealing of gold coated GaAs substrates in N₂ ambient. GaAs substrates with different dopants were taken as the starting material to study the effect of doping on the growth and photoluminescence properties of β-Ga₂O₃ nanostructures. The nanostructures were investigated by Grazing Incident X-ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy, Energy Dispersive X-ray Spectroscopy, room temperature photoluminescence and optical absorbance. The selected area electron diffraction and High resolution-TEM observations suggest that both nanowires and nanobelts are single crystalline. Different growth directions were observed for nanowires and nanoribbons, indicating the different growth patterns of these nanostructures. The PL spectra of β-Ga₂O₃ nanostructures exhibit a strong UV-blue emission band centered at 410 nm, 415 nm and 450 nm for differently doped GaAs substrates respectively. A weak red luminescence peak at 710 nm was also observed in all the samples. The optical absorbance spectrum showed intense absorption features in the UV spectral region. The growth and luminescence mechanism in β-Ga₂O₃ nanostructures are also discussed.     

Fabrication and characterization of CuO-core/TiO2-shell one-dimensional nanostructures

We have fabricated CuO-core/TiO₂-shell one-dimensional nanostructures by coating the CuO nanowires with MOCVD-TiO₂. The structure of the core/shell nanowires has been investigated by using scanning electron microscopy, transmission electron microscopy, and X-ray diffraction analysis techniques. The CuO-cores and the TiO₂-shells of the as-synthesized nanowires have been found to have crystalline monoclinic CuO and crystalline tetragonal anatase TiO₂ structures, respectively. The CuO-core/TiO₂-shell nanowires are winding and has rougher surface, whereas the CuO nanowires are straight and have smoother surface.Influence of the substrate temperature and the growth time on the structure such as the morphology, size, and crystallographic orientation of CuO nanowires synthesized by thermal oxidation of Cu foils have also been investigated. All the nanowires have only the CuO phase synthesized at 600 °C, whereas those synthesized at 400 °C have both CuO and Cu₂O phases. The highest density of CuO nanowires with long thin straight morphologies can be obtained at 600 °C. In addition, the growth mechanism of the CuO nanowires has been discussed.     

Growth of Y-junction bamboo-shaped CNx nanotubes on GaAs substrate using single feedstock

Nitrogen-doped Y-junction bamboo-shaped carbon nanotubes were synthesized by chemical vapor deposition of monoethanolamine/ferrocene mixture on GaAs substrate at 950 °C. The use of monoethanolamine as the C/N feedstock simplifies the experimental arrangement by producing ammonia during the growth process. The structure, morphology and graphitization of as-grown nitrogen-doped carbon nanotubes (CN_x) were examined by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy analysis. TEM analysis indicates that nanotubes have a bamboo-like structure. The nitrogen concentration on as-grown CN_x nanotube was found to be 7.8 at.% by X-ray photoelectron spectroscopy (XPS) analysis. XPS analysis also indicated that there are two different types of nitrogen atoms (pyridinic and graphitic) in these materials. The possible growth mechanism of formation of Y-junction CN_x nanotubes was briefly discussed. Field emission measurement suggested that as-grown CN_x nanotubes are excellent emitters with turn-on and threshold fields of 1.6 and 2.63 V/μm, respectively. The result indicated that monoethanolamine proves to be an advantageous precursor to synthesize Y-junction nitrogen-doped carbon nanotubes and such nanotubes might be an effective material to fabricate various field emission devices.     

Field emission properties of carbon nanotubes grown on silicon nanowire arrays

Carbon nanotubes are synthesized on the silicon nanowire arrays which are fabricated on silicon substrate by chemical vapor depositing SiCl₄ and H₂ gases in the presence of Au catalysts. The silicon nanowires are single-crystal with lengths up to 100 μm and diameters ranging from 50 to 500 nm. The tangled carbon nanotubes are grown directly from the surface of Si nanowires. The field emission properties of the carbon nanotubes are investigated at the gap of 200 μm. The low turn on and threshold fields are obtained. The stabilization of the emission currents is also presented.     

Synthesis of In-doped Ga2O3 zigzag-shaped nanowires and optical properties

In-doped Ga₂O₃ zigzag-shaped nanowires and undoped Ga₂O₃ nanowires have been synthesized on Si substrate by thermal evaporation of mixed powders of Ga, In₂O₃ and graphite at 1000 °C without using any catalyst via a vapor-solid growth mechanism. The morphologies and microstructures of the products were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence spectroscopy (PL). The nanowires range from 100 nm to several hundreds of nanometers in diameter and several tens of micrometers in length. A broad emission band from 400 to 700 nm is obtained in the PL spectrum of these nanowires at room temperature. There are two blue-emission peaks centering at 450 and 500 nm, which originate from the oxygen vacancies, gallium vacancies and gallium-oxygen vacancy pairs.     

Synthesis of crystalline SrMoO4 nanowires from polyoxometalates

Crystalline SrMoO₄ nanowires were synthesized via a facile hydrothermal process at 180 °C for 10 h. α-(NH₄)₆-P₂Mo₁₈O₆₂·nH₂O, one of polyoxometalates with Dawson structure, was employed as the source of molybdates. The diameter and length of the obtained SrMoO₄ nanowires are about 20 nm and 5-10 μm, respectively. HRTEM results show that the SrMoO₄ nanowires are of high crystallinity with rough surface. However, when Na₂MoO₄·2H₂O was used, there are only SrMoO₄ nanorods with smaller aspect ratio (200/70 nm) in the similar hydrothermal process. The probable growth mechanism was discussed.     

Synthesis of lanthanum nickelate perovskite nanotubes by using a template-inorganic precursor

A new route to obtain metal oxide nanotubes is presented: an inorganic coordination complex precursor containing the metal ions and impregnated into alumina membrane templates yield hollow tubular nanostructures of LaNiO₃ by calcination at 600 °C as characterized by powder X-ray diffraction (XRD). Scanning electron microscopy (SEM) shows that the resulting nanotubes have 200 nm in diameter in good agreement with the template pore. Transmission electron microscopy (TEM) and dark field transmission electron microscopy (DF-TEM) show that the nanotubes with 10-20 nm walls and internal separations are composed of 3-5 nm crystals.     

Enhanced field emission and patterned emitter device fabrication of metal-tetracyanoquinodimethane nanowires array

Ag(TCNQ) and Cu(TCNQ) nanowires were synthesized via vapor-transport reaction method at a low temperature of 100 °C. Field emission properties of the as-obtained nanowires on ITO glass substrates were studied. The turn-on electric fields of Ag(TCNQ) and Cu(TCNQ) nanowires were 9.7 and 7.6 V/μm (with emission current of 10 μA/cm²), respectively. The turn-on electric fields of Ag(TCNQ) and Cu(TCNQ) nanowires decreased to 6 and 2.2 V/μm, and the emission current densities increased by two orders at a field of 8 V/μm with a homogeneous-like metal (e.g. Cu for Cu(TCNQ)) buffer layer to the substrate. The improved field emission is due to the better conduct in the nanowires/substrate interface and higher internal conductance of the nanowires. The patterned field emission cathode was then fabricated by localized growing M-TCNQ nanowires onto mask-deposited metal film buffer layer. The emission luminance was measured to be 810 cd/m² at a field of 8.5 V/μm.     

Synthesis of carbon nanotubes and iron oxide nanoparticles in MW plasma torch with Fe(CO)5 in gas feed

The MW plasma torch (2.45 GHz) in the mixture of CH₄/H₂/Ar (42/430/1540 sccm) with added Fe(CO)₅vapors was used for the synthesis of iron oxide nanoparticles and carbon nanotubes. The particles with well-defined facets consisting of Fe₃O₄ and -Fe₂O₃ and self-assembled into long chains were produced at the power of 360 W. At higher power of 440-460 W the deposit contained significant amount of multi-walled carbon nanotubes covered by iron oxide nanoparticles. The diameter of CNTs was 8-20 nm. The particles had Fe₃O₄ and/or -Fe₂O₃ cores of spherical shape covered by a thin layer of carbon.     

Fabrication and characterization of electrodeposited Co1−xCrx nanowires

Co_1−xCr_x   alloy nanowires with 0.01<x<0.93$0.01<x<0.93$ were fabricated by electrodeposition in a porous alumina membrane from an electrolyte containing Co and Cr ions. The composition, structure and magnetic properties of the nanowires have been characterized. Cobalt-rich nanowires were electrodeposited at a potential of −1.0 V relative to Ag/AgCl and chromium-rich nanowires were deposited beyond −3.5 V. The optimized processing conditions include hydrogen annealing to give hysteresis loops for the Co₈₀Cr₂₀ nanowires with coercivity of up to 200 mT and squareness of up to 0.95. Magnetization of the Co₈₀Cr₂₀ nanowire is 77 A m² kg⁻¹ and the energy product of the arrays is 35 kJ m⁻³.     

H2 storage efficiency and sorption kinetics in composite materials

We have prepared two different kinds of composite materials for hydrogen storage and studied their H₂ storage capacity and desorption kinetics. The first composite material consists of magnesium-containing transition metal nanoclusters distributed in the Mg matrix (Mg:TM): this composite material shows better H₂ desorption performances than pure Mg. This improvement is attributed to the role of the MgH₂-TM nanocluster interface as preferential site for hexagonal Mg (h-Mg) nucleation and to the rapid formation of interconnected h-Mg domains where H diffusion during desorption occurs. The second composite material consists of LaNi₅ particles (size<30 μm) distributed in a polymeric matrix. The H₂ storage capacity is negligible at low metal content (50 wt%) when the metal particles are completely embedded in the polymeric matrix. The H₂ storage capacity is comparable to that of the pure LaNi₅ powders at high metal content (80 wt%) when a percolative distribution is assumed by the LaNi₅ particles: this evidence points out the role of metal-metal interfaces and of interconnected metallic networks for H transport.     

Synthesis of nanocomposites based on nanotubes and silicates

In situ synthesis of nanocomposites based on carbon nanotubes and zeolite/montmorillonite was carried out in a hot filament CVD reactor where the precursors (methane and hydrogen) are activated by carbonized tungsten filaments heated up to 2200 °C. In nanocomposites formed both on zeolite and montmorillonite we observed cross-linking of the catalytic particles by nanotubes and creation of carbon nanotube bridges and three-dimensional networks. The length of nanotube bridges was in a range from several nm to nearly 10 μm. A high density of carbon nanotubes was observed in the whole volume of zeolite. The high catalytic efficiency of zeolite is most likely caused by its structure that allows anchoring of Fe³⁺ catalytic particles in the pores and prevents their migration from the sample. At the ends of the nanotubes grown on zeolite we observed particles of the catalyst. In montmorillonite, the particles catalyzing the growth of carbon nanotubes may be present not only on the external surface but also in the interlayer voids of the mineral. Its catalytic efficiency is enhanced as proved by the higher amount of CNTs and their bundles. In the course of CNTs synthesis probably also clumps of Fe³⁺ catalytic particles arise, which may be the reason for formation of bundles of nanotubes.     

The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires

In this paper, we report that amorphous silicon oxide nanowires can be grown in a large quantity by chemical vapor deposition with molten gallium as the catalyst in a flow of mixture of SiH₄, H₂ and N₂ at 600 °C. Meanwhile, when we grow these nanowires under the same conditions but without H₂, octopus-like silicon oxide nanostructures are obtained. The reasons and mechanisms for the growth of these nanowires and nanostructures are discussed. Blue light emission is observed from SiO_x nanowires, which can be attributed to defect centers of high oxygen deficiency. These SiO_x nanowires may find applications in nanodevices and reinforcing composites.     

Fabrication, morphology, and photoluminescence properties of GaN nanowires and nanorods by ammoniating Ga2O3/V films on Si(1 1 1)

GaN nanowires and nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga₂O₃/V films at 900 °C in a quartz tube. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectrum were carried out to characterize the structure, morphology, and photoluminescence properties of GaN sample. The results show that the GaN nanowires and nanorods with pure hexagonal wurtzite structure have good emission properties. The growth direction of nanostructures is perpendicular to the fringes of (1 0 1) plane. The growth mechanism is also briefly discussed.