半导体光放大器增益及发光特性的理论研究

半导体光放大器(SOA)的非线性特性在光开关、波长变换、光逻辑运算中有重要的应用.研究了注入电流、入射光波长及SOA有源区长度对SOA增益和发光功率的影响.数值模拟结果表明:注入电流的增加,会引起载流子浓度的增加,且使SOA增益趋于饱和的速率加快;不同的SOA模型存在一个最佳输入光波长,在此波长附近有较好的增益特性;加长半导体光放大器有源区长度可获得更大增益,同时提高了器件的响应速率.     

增益半导体光放大器的特性

为满足半导体光放大器（SOA）在光纤到户FTTH系统接入网中的广泛应用,提出了基于光纤光栅外腔反馈型GC-SOA结构的全光增益机制,窄线宽激光光源经可变衰减器、隔离器和光纤光栅注入到SOA中,SOA的输出光经隔离器和光纤光栅送至光谱分析仪,通过光纤光栅反馈输入SOA形成钳制激光。对GC-SOA的阈值特性、增益特性及开关特性进行分析,结果表明:当注入电流小于GC-SOA的阈值电流时,增益随注入电流的增加而增加;当注入电流大于GC-SOA的阈值电流后,其增益不再随注入电流的变化而变化,实现了SOA的增益稳定,使SOA的饱和输出功率得到了提高。     

基于SFRL的FWM型可调谐波长转换器啁啾特性分析

基于半导体光纤环形腔激光器的四波混频型可调谐全光波长转换器的宽带理论模型,从理论上研究了输入信号光功率、注入电流、两个耦合器的耦合比、激射光波长和半导体光放大器有源区长度对转换光频率啁啾的影响.结果表明:转换光的频率啁啾随着输入信号光峰值功率、注入电流以及SOA有源区长度的增大而增大,随两个耦合器耦合比的增大而减小.     

透明导电薄膜ITO对浅面浮雕VCSEL的影响

对于顶面出光的浅面浮雕VCSEL结构,有源区的电流密度分布的不均性制约着单模稳定性的提高。为此,提出了一种新型结构:氧化铟锡透明导电薄膜(ITO)浅面浮雕VCSEL。该结构不仅能够增大高阶模式的阈值增益,还能够提高基模的增益,实现基模对高阶模式的稳定抑制。研究了ITO的厚度对阈值增益的影响及ITO对VCSEL有源区电流密度分布的影响。研究结果表明:在ITO的厚度为半波长的整数倍时,基模对高阶模式的限制作用最强;ITO通过改善VCSEL有源区的电流密度分布,达到了增大基模的增益和降低高阶模式增益的目的,同时还降低了串联电阻和外电压。     

多电极半导体光放大器对增益特性的改善

提出了采用多电极实现电流非均匀注入来改变半导体光放大器(SOA)内部的载流子分布,从而改变其增益饱和特性的一种新的方案.用SOA分段模型的计算结果表明,与单电极均匀注入电流的SOA 相比,在同样的总注入电流下,对一个两电极SOA采用前面小后面大的非均匀电流注入,可以提高饱和输出功率和饱和输入功率.而采用前面大后面小的电流注入方式,则将使SOA更容易发生饱和,不仅饱和输出功率与饱和输入功率减小,而且增益谱在饱和后的压缩程度加大,增益谱压缩的对称性提高.对多电极SOA,可以方便灵活地调节各节之间的长度比和注入电流比来满足不同的应用要求.     

SOA动态增益特性的理论和实验研究

提出了SOA有效增益恢复时间的概念，同时推导了有效增益恢复时间的解析表达式.针对SOA在交叉增益调制型波长转换方面的应用，从理论上分析了注入电流、探测光功率、有源区长度对增益恢复时间的影响，实验测量了不同条件下SOA的增益恢复时间，实验结果与理论计算结果相符合. 关键词： 半导体光放大器 增益恢复时间 全光波长转换器     

提高SOA响应速度的几种方法

在全光网和全光信号处理中，半导体光放大器（SOA）因其优良的非线性特性和快速响应特性而得到了广泛应用。增益恢复时间是表征SOA响应速度的关键参数。研究了增益恢复时间与SOA工作参数的关系，理论上得到动态增益特性、增益恢复时间与各参数之间的关系，并参考实际参数，进行了数值模拟。模拟结果表明，增加腔长、减小横截面积、增大注入电流、增大CW辅助光功率、增大探测光功率，均可提高SOA的响应速度。     

光电子技术与器件 光放大、控制与器件

TH722．32 2005042947 SOA动态增益特性的理论和实验研究=Experimental and theoretical study on gain dynamics of SOA[刊,中]／董建绩 (华中科技大学光电子工程系,湖北,武汉(430074)),张新亮…／／物理学报,-2005,54(2),-763-767 提出了SOA有效增益恢复时间的概念,同时推导了有效增益恢复时间的解析表达式。针对SOA在交叉增益调制型波长转换方面的应用,从理论上分析了注入电流、探测光功率、有源区长度对增益恢复时间的影响,实验测量了不同条件下SOA的增益恢复时间,实验结果与理论计算结果相符合。图7参8(杨妹清)     

带间级联激光器电子注入区优化研究(特邀)EI北大核心CSCD

带间级联激光器有源区内部的物理机制复杂,尚未得到充分研究。优化了电子注入区结构,通过减小InAs/AlSb啁啾超晶格中InAs量子阱的厚度促进电子向光增益区的注入,在较低的电子注入区掺杂浓度下满足了光增益区电子数和空穴数基本相等的注入平衡条件,降低了有源区中自由载流子吸收和杂质散射造成的光损耗。采用该有源区结构的带间级联激光器实现了较好的室温激射性能,腔长4 mm、脊宽20μm且腔面未镀膜器件的阈值电流为200 mA,单腔面出光功率为55 mW。通过分析2~5 mm不同腔长器件的电压-电流-光功率性能,得到器件的波导损耗仅为3 cm^(-1),有源区载流子寿命为0.7 ns。     

质子注入能量对垂直腔面发射激光器的阈值和功率的影响

文章研究了如何兼顾质子注入型垂直腔面发射激光器的功率和阈值性能.从模拟和实验两方面分析了质子注入能量与器件功率和阈值特性的关系.发现注入能量过高时,损伤有源区,降低了功率性能.而能量过低则会减弱对注入电流的限制,增加阈值.计算和实验结果表明,对于文中的器件结构,315 keV的注入能量是合适的.在10μm的注入孔径下获得器件的阈值为4.3 mA,功率为1.7 mW.     

Mode control in a high-gain relativistic klystron amplifier

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier.Meanwhile higher modes,which affect the working mode,are also easy to excite in a device with more middle cavities.In order for the positive feedback process for higher modes to be excited,a special measure is taken to increase the threshold current for such modes.Higher modes' excitation will be avoided when the threshold current is significantly larger than the beam current.So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV.Particle in cell simulations show that the gain is 1.6×105 with the input RF power of 6.8 kW,and that the output RF power reaches 1.1 GW.     

All-optical ultrawideband monocycle generation utilizing gain saturation of a dark return-to-zero signal in a semiconductor optical amplifier

We demonstrate a simple and compact scheme to generate ultrawideband (UWB) monocycle pulses utilizing gain saturation of a dark return-to-zero (RZ) signal in a semiconductor optical amplifier (SOA). When optical pulses with a dark RZ format propagate through the SOA, the output power at the rising edge will be overamplified compared with that at other durations due to the gain unsaturation. As a result, the output pulses are monocyclelike. The UWB frequency spectra at different injected currents, different input pulse widths, and different input wavelengths are analyzed. Our experiments show that the monocycle generation has good tolerance to the SOA bias current and the input signal wavelength.     

Enhancement in the gain recovery of a semiconductor optical amplifier by device temperature control

We present a numerical investigation on the temperature dependence of gain recovery, of a semiconductor optical amplifier (SOA). It is shown that the decrease in temperature significantly speed-up the gain recovery of the SOA. Under typical operating conditions, a 20 K reduction in temperature of the SOA results in a decrease of 150 ps in the gain recovery time. A comparative estimation of device temperature and assisted-light power requirements for enhancing the gain recovery has also been carried out. It is found that, a decrease of 8 K in the temperature of the SOA, is as effective in enhancing the gain recovery as injection of 25 dBm assisted-light power in the counter-propagating mode. Our study shows that under moderate current biasing conditions, temperature reduction is a better and convenient option to speed-up the gain recovery of an SOA, than the use of external assisted-light injection, which requires an additional laser source and wavelength division multiplexing (WDM) components for coupling and de-coupling, leading to insertion losses in the communication channel.     

Mode control in a high-gain relativistic klystron amplifier

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes＇ excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 10^5 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.     

Interferometric method of suppressing the pattern effect in a semiconductor optical amplifier

A new idea of using change in index of refraction to suppress gain variation in a saturated semiconductor optical amplifier (SOA) is presented. This kind of gain compensation has the advantage of high speed because it involves two phenomena that always accompany each other. This compensation can be achieved with a nonsymmetrical Mach-Zehnder interferometer structure. Calculated results show that with this structure the input and output power of the SOA can be extended to nearly 10 dB from the former small-signal limit when less than 1-dB gain variation is permitted. Numerical simulations with an advanced dynamic model of the SOA agree with the calculated results.     

包含两个半导体光放大器的锁模光纤环形激光器数值研究

采用自再现理论,对一种包含两个半导体光放大器的锁模光纤环形激光器进行了数值研究.研究结果表明：为了提高谐波锁模输出脉冲的质量,调制半导体光放大器应当保持高直流偏置,对自发辐射信号进行调制并提供锁模脉冲克服腔损耗所需的增益,而此时的增益半导体光放大器则被低直流偏置充当增益补偿器维持较窄的净增益窗口;与之相反,为了获得振幅均衡的有理数谐波锁模输出脉冲,调制半导体光放大器则应当偏置在较低的电流上,而增益半导体光放大器应当保持较高的偏置电流以提供足够的常量增益克服腔损耗.此外,还必须提高注入光信号的峰值功率.     

基于半导体光放大器的一阶IIR微波光子学滤波器及其品质因素分析

对基于半导体光放大器(SOA)环形腔结构的一阶无限冲击响应(IIR)微波光子学滤波器的品质因数(Q值)进行了实验和理论研究. 通过在有源环内置入窄带光滤波器,并调节有源环的输入光功率、SOA抽运电流、实验得到的最高Q值接近200. 理论分析表明为了得到较高的Q值,应尽可能提高信噪比和信号光的环路增益. 在考虑了 SOA中放大的自发辐射(ASE)噪声的基础上,计算了输入光功率、SOA抽运电流、环内光滤波器的带宽对Q值的影响. 数值计算的结果与实验现象基 关键词： 微波光子学滤波器 Q值')" href="#">Q值 半导体光放大器 放大的自发辐射