一维新型阶梯函数光子晶体透射特性

研究了阶梯型折射率n₂₂、n₁₁(阶梯分布高度)的大小、对应的分布厚度、不同入射角以及缺陷模对阶梯函数型光子晶体透射特性的影响.由费马原理给出光在函数光子晶体中的运动方程,再由电磁传播理论给出函数光子晶体的传输矩阵,进一步推导出函数光子晶体的透射率以及电场分布的表达式.研究表明,1)随n₂₂,n₁₁大小或者厚度改变,其禁带变宽;2)随光的入射角增加,其禁带变窄;3)当加入缺陷层时,随着缺陷层介质折射率增加,缺陷模强度减小且位置发生红移;4)在函数光子晶体中,缺陷层前电场分布保持不变,而在缺陷层处以及之后的电场强度都明显增强,这不同于常规光子晶体的电场分布仅在缺陷层处局域增强.     

基于二维光子晶体耦合腔波导的新型慢光结构研究

对二维介质柱光子晶体耦合腔波导慢光结构进行了研究,发现随着缺陷腔之间晶格个数增多,群速度减小很快,选用7×7超胞单元时耦合腔波导结构的导模最大群速度ν_g-max只有光子晶体线缺陷波导的1/251.然后对7×7超胞单元的缺陷腔周围四个介质柱半径进行调整,发现新型结构导模的ν_g-max进一步减小,最小可达到589×10^-4c,约为未调整之前的1/5.最后通过比较发现,当改变缺陷腔上下相邻两个介质柱半径时得到的结构具有更好的慢光特性.     

含特异材料光子晶体隧穿模的偏振特性

构造了由普通材料A(SiO₂)和电单负材料B组成的(AB)^N(BA)^N型一维光子晶体.数值计算表明原禁带的1907.3 nm处出现了一个十分尖锐的隧穿模. 入射角增加,该隧穿模的透射率和半峰全宽度均保持不变,但位置发生蓝移, 入射角在15°-65°的区间内,移动率的绝对值 |dλ/dθ| 较大.当B介质的磁导率μ_B 从5增加到10时,只是隧穿模的位置发生了红移. 介质的几何厚度增加时,隧穿模的透射率不变,但其位置红移明显,半峰全宽略有增加.     

厄米-高斯光束在非Kolmogorov大气湍流中的传输性质

基于广义惠更斯-菲涅尔原理和非Kolmogorov(非K)谱,推导出了厄米-高斯光束在非K大气湍流中传输的束宽、角扩展以及M²因子的解析表达式.数值计算表明,在传输距离比较远(如z≥3 km)时,厄米-高斯光束的束宽、角扩展和M²因子随广义指数参量α的增大而增加直到α=3.11时达到最大值后再随α的增大而减小;随湍流的内尺度l₀的减小而增大;随外尺度l₀的增加而增大(3.6<α<4).但是当广义指数参量α在3<α<3.6区间取值时,束宽和M²因子几乎不随外尺度的增加而变化.     

增加光子奇偶q相干态的高阶压缩效应

通过数值计算研究了增加光子奇q相干态a_q^+m|α>_q^o和增加光子偶q相干态a_q^+m|α>_q^e的高阶压缩效应.结果表明:当q较小时,态a_q^+m|α>_q^o和a_q^+m|α>_q^e都能呈现出强烈的奇次方阶压缩效应,但无偶次方阶压缩效应,而且奇次方阶压缩随m的增大而增强.当m=0时a_q^+m|α>_q^o和a_q^+m|α>_q^e为光场振幅偶次幂的最小测不准态,但当m≠0时它们不是光场振幅偶次幂的最小测不准态.     

基于宽度可调节的线缺陷平板型光子晶体的空气槽微腔

研究了一种空气槽光子晶体微腔,这种腔是由在平板型光子晶体上引入一条宽度可以调节的线缺陷空气槽形成的.腔模的电场被强烈局限在空气槽中,由于介电常量的不连续性,电场得到很大的提高,同时模体积被大大地降低.数值模拟与分析了微腔的能带结构和场分布,考虑到腔模的谐振频率和对称性,发现一阶偶膜同时具有较高的品质因子和较小的模体积;应用有限时域差分法,得到腔模的品质因子可以高达10⁶,模体积仅为0.02(λ/n)³.计算了一阶偶模谐振波长随空气槽宽度以及空气孔半径的变化,发现随着宽度的增加,波长越来越短.而随着空气孔半径的增加,波长近似线性地减小;当空气孔半径为170 nm时,可以获得最高的腔品质因子.     

由单负材料组成的一维对称型光子晶体中的隧穿模

由电单负材料A和磁单负材料B构成了一维对称型光子晶体,数值计算表明其带隙中出现了一隧穿模. 材料层数增加,隧穿模宽度急剧变窄,而其位置不变.隧穿模的位置和宽度对入射角的变化都不太敏感. 材料的几何厚度减小,隧穿模的位置蓝移,而其宽度不变. μ_A, ε_B增加,隧穿模的位置红移,宽度减小. 利用隧穿模的以上特性可以实现对电磁波传播的动态调控.     

氧含量对BiFeOδ多晶陶瓷介电特性的影响

采用固相反应法制备了不同含氧量的BiFeO_δ多晶陶瓷样品，利用HP4294A阻抗分析仪测量了样品的介电特性随频率和氧含量的变化，用正电子湮没寿命谱学的方法研究了样品中因氧含量的变化所引起的结构缺陷. 实验结果表明：引入氧空位和氧填隙离子缺陷都会使介电常数减小，而介电损耗则随氧含量的增加而增加，二者的变化范围均在10%—35%之间；对不同氧含量的BiFeO_δ样品，介电常数和介电损耗随测量频率的增加而减小. 氧空位的引入使得局域电子密度变小，正电子平均寿命τ_m增加. 在氧含量δ=2.99时电子密度最大(n_e=3.90×10²³/cm³)，继续增加氧含量对正电子寿命与局域电子密度的影响不大. BiFeO_δ样品的介电常数和介电损耗随氧含量的变化可以在空间电荷限制电导的框架下来理解.     

高Q值二维光子晶体缺三腔的数值模拟与分析

针对单光子源对高性能纳米腔的需要, 采用“柔性束缚"光子限制结构和时域有限差分法, 通过把时域和频域的光电场分布与理想高斯函数进行比较, 设计出一种高品质因子的光子晶体缺三腔(L3), 其Q值达Q=2.8×10⁵, 有效模式体积为V_eff=0.1813(λ/n)³, 相应的Purcell因子超过F=1.2×10⁵. 此外, 提出一种定量描述腔性能优劣程度的能量系数分析法, 通过定量对比二维高斯分布下的场分布能量与总能量, 提高了腔的优化速度与准确性. 计算结果表明, 随着腔性能的优化, Q值正比于能量系数γ值直至饱和.     

半导体材料AAl2C4(A=Zn, Cd, Hg; C=S, Se)的电子结构和光学性质

采用基于密度泛函理论的第一性原理方法, 对具有缺陷型黄铜矿结构的半导体材料A^ⅡAl₂C₄^Ⅵ(A=Zn, Cd, Hg; C =S, Se)的构型和电子结构进行研究, 并系统考察了各晶体的光学性质. 对于线性光学性质, 五种晶体在红外区和部分可见光区具有良好的透光性能, 其中HgAl₂S₄和HgAl₂Se₄晶体具有适中的双折射率. 在非线性光学性质方面, 该类晶体倍频效应较强, 理论预测得到的二阶静态倍频系数均较大(>20 pm/V). 体系的倍频效应主要来源于价带顶附近以S/Se 价p轨道为主要成分的能带向含有较多Al/Hg 价p成分的空带之间的跃迁. 通过与已商业化的AgGaC₂晶体光学性质的对比, 结果表明HgAl₂S₄和HgAl₂Se₄是一类性能优良的红外非线性光学晶体材料.     

Defect modes of chiral photonic crystals with an isotropic defect

Specific features of the defect modes of cholesteric liquid crystals (CLCs) with an isotropic defect, as well as their photonic density of states, Q factor, and emission, have been investigated. The effect of the thicknesses of the defect layer and the system as a whole, the position of the defect layer, and the dielectric boundaries on the features of the defect modes have been analyzed. It is shown that when the CLC layer is thin the density of states and emission intensity are maximum for the defect mode, whereas when the CLC layer is thick, these peaks are observed at the edges of the photonic band gap. Similarly, when the gain is low, the density of states and emission intensity are maximum for the defect mode, whereas at high gains these peaks are also observed at the edges of the photonic band gap. The possibilities of low-threshold lasing and obtaining high-Q microcavities have been investigated.     

1维光子晶体缺陷模

 利用光学传输矩阵理论对掺杂1维光子晶体的缺陷模进行了研究。计算和分析了缺陷层折射率、缺陷层厚度与缺陷峰的关系。得出结论：随着缺陷层厚度的增大,缺陷峰波长呈线性增加,但是当缺陷层厚度增加到一定值时,缺陷峰的个数也将不断增加;缺陷层折射率也与缺陷峰波长有线性正比关系。从而提出了一种在微波领域测量介质折射率和介电常数的有效方法。     

Properties of Defect Modes in Periodic Lossy Multilayer with Negative-Index-Materials

Employing the characteristic matrix method, this study investigates transmission properties of onedimensional defective lossy photonic crystals composed of negative and positive refractive index layers with one lossless defect layer at the center of the crystal. The results of the study show that as the refractive index and thickness of the defect layer increase, the frequency of the defect mode decreases. In addition, the study shows that the frequency of the defect mode is sensitive to the incidence angle, polarization, and physical properties of the defect layer, but it is insensitive to the small lattice loss factor. The peak of the defect mode is very sensitive to the loss factor, incidence angle, polarization, refractive index, and thickness of the defect layer. This study also shows that the peak and the width of the defect mode are affected by the numbers of the lattice period and the loss factor. The results can lead to designing new types of narrow filter structures and other optical devices.     

Frequency-dependent reflection of elastic wave from thin bed in porous media

The reflection of elastic wave from thin bed in porous media is important for oil and gas reservoir seismic exploration.The equations for calculating frequency-dependent reflection amplitude versus incident angle(FDAVA) from thin bed in porous media are obtained based on porous media theory. Some conclusions are obtained from numerical analysis, specifically, slow compression wave may be ignored when considering boundary conditions in most situations; the dispersion of reflection from thin bed is much higher than that from thick layer and is periodic in frequency domain, which is affected by the thickness of thin bed, velocity, and incident angle; the reflection amplitude envelope in frequency domain decays exponentially, which is affected by the thickness of thin bed, attenuation, and incident angle; the reflection amplitude increases with thickness of thin bed increasing, and then it decreases when the thickness reaches to a quarter of wavelength.     

基于GaSb/CdS薄膜热光伏电池的器件设计

基于GaSb薄膜热光伏器件是降低热光伏系统成本的有效途径之一, 本文主要针对GaSb/CdS薄膜热光伏器件结构进行理论分析. 采用AFORS-HET软件进行模拟仿真, 分析GaSb和CdS两种材料各自的缺陷态密度、界面态对电池性能的影响. 根据软件模拟可以得知, 吸收层GaSb的缺陷态密度以及GaSb与CdS之间的界面态密度是影响电池性能的重要因素. 当GaSb缺陷态增加时, 主要影响电池的填充因子, 电池效率明显下降. 而作为窗口层的CdS缺陷态密度对电池性能影响不明显, 当CdS缺陷态密度上升4个数量级时, 电池效率仅下降0.11%.     

一种新型光子晶体双色谐振腔

提出一种新型的光子晶体双色谐振腔,以光学传输矩阵法为基础给出了设计的关键参量及其优化方法,并分析了其物理原理.根据常用的650nm/780nm,532nm/671nm,1079nm/1320nm和1 064 nm/1 319 nm等双色激光谱线,设计了4个光子晶体双色谐振腔结构.这种一维光子晶体谐振腔只需要一个谐振腔,缺陷层两侧周期数为5层时,该腔体总厚度小于5 μm,可获品质因子为103~104,相对带宽为10－4~10－5的双色谱线,且模式纯净,基于基模谐振.     

Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD

The epitaxial-Si(epi-Si) growth on the crystalline Si(c-Si) wafer could be tailored by the working pressure in plasmaenhanced chemical vapor deposition(PECVD).It has been systematically confirmed that the epitaxial growth at the hydrogenated amorphous silicon(a-Si:H)/c-Si interface is suppressed at high pressure(hp) and occurs at low pressure(1p).The hp a-Si:H,as a purely amorphous layer,is incorporated in the 1p-epi-Si/c-Si interface.We find that:(i) the epitaxial growth can also occur at a-Si:H coated c-Si wafer as long as this amorphous layer is thin enough;(ii) with the increase of the inserted hp layer thickness,lp epi-Si at the interface is suppressed,and the fraction of a-Si:H in the thin films increases and that of c-Si decreases,corresponding to the increasing minority carrier lifetime of the sample.Not only the epitaxial results,but also the quality of the thin films at hp also surpasses that at lp,leading to the longer minority carrier lifetime of the hp sample than the lp one although they have the same amorphous phase.     

Optimizing the quality factor of a wideband guided-mode resonance biosensor

This work studies the effect of the biochemical molecular layer on the quality factor of guided-mode resonance (GMR) filter of an ultrasensitive label-free biosensor. A GMR biosensor with a narrower bandwidth has a higher sensitivity but requires much higher accuracy in its fabrication process. In this study, we have managed to present a GMR filter with a narrow bandwidth that requires less precision by controlling the thickness of the biochemical molecule layer, which increases the Q factor by up to three times.     

Defect density variation with deposition rate in snsb thin films from annealing study of electrical resistance

SnSb thin films of the same thickness (600 Å) vacuum deposited at room temperature on glass substrates at various deposition rates were heated to a maximum temperature of about 300°C and the changes in the electrical resistance with temperature were recorded. From the resistance vs temperature data “initial lattice distortion energy spectra” i.e. the variation of the defect density with its activation energy, of the films is obtained. It is found that the area of the spectra decreases with an increase in the deposition rate thereby indicating that the defect density of the film decreases with increasing deposition rate. The observed decrease in the defect density of the films with increasing deposition rate has been satisfactorily explained with the help of nucleation and growth phenomena.     

Suppression of the domain structure in uniaxial ferromagnetic films with a superconducting coating

Specific models of domain walls are used to investigate conditions for the single-domain state and quasi-single-domain states in structures with magnetic materials having a quality factor higher than one. It is shown that the critical thickness of the magnetic film in a tangentially magnetized system decreases monotonically as the magnetizing field increases from zero to the transition from the collinear to the homogeneous angular phase and then increases monotonically with increasing external field. In a thin isolated magnetic film, the size of the domains increases exponentially with decreasing thickness. This dependence is logarithmic near the transition to the single-domain state for a film coated on two sides and obeys a power law for a film coated on one side. The establishment of a single-domain state and characteristic features in the asymptotic behavior of the domain structure in magnetic films with and without coatings can be attributed to differences in the asymptotic behavior of the field of a single domain wall. Fiz. Tverd. Tela (St. Petersburg) 40, 1068–1074 (June 1998)