一种平行背栅极碳纳米管阵列的场增强因子计算

建立一种平行背栅极碳纳米管阵列阴极,基于电场叠加原理,利用镜像电荷法对其进行计算,给出碳纳米管顶端表面电场增强因子。在此基础上,进一步分析器件各类参数对电场增强因子的影响。分析表明,碳纳米管阵列阴极具有最佳阵列密度,其对应碳纳米管间距大约为碳纳米管高度的两倍,靠阴极阵列边缘部位的碳纳米管发射电子能力比其中心部位的大。除了碳纳米管的长径比之外,栅极宽度、栅极厚度和栅极间距等也对电场增强因子有一定的影响:栅极越宽,场增强因子越大;而栅极厚度、栅极间距越大,场增强因子就越小。     

一种平行背栅极碳纳米管阵列的场增强因子计算

建立一种平行背栅极碳纳米管阵列阴极,基于电场叠加原理,利用镜像电荷法对其进行计算,给出碳纳米管顶端表面电场增强因子。在此基础上,进一步分析器件各类参数对电场增强因子的影响。分析表明,碳纳米管阵列阴极具有最佳阵列密度,其对应碳纳米管间距大约为碳纳米管高度的两倍,靠阴极阵列边缘部位的碳纳米管发射电子能力比其中心部位的大。除了碳纳米管的长径比之外,栅极宽度、栅极厚度和栅极间距等也对电场增强因子有一定的影响:栅极越宽,场增强因子越大;而栅极厚度、栅极间距越大,场增强因子就越小。     

一种平行栅碳纳米管阵列阴极的场发射特性研究

建立一种平行栅碳纳米管阵列阴极,利用悬浮球模型和镜像电荷法进行计算,给出碳纳米管顶端表面电场与电场增强因子的解析式. 在此基础上,进一步分析器件各类参数以及接触电阻对阴极电子发射性能的影响. 分析表明,碳纳米管间距大约为2倍碳纳米管高度时阵列阴极的分布密度最佳,靠边缘部位的碳纳米管发射电子能力比其中心部位的大;除碳纳米管的长径比之外,栅极宽度和栅极间距也对电场增强因子有一定作用;接触电阻的存在大幅度降低碳纳米管顶端表面电场与发射电流,而接触电阻高于800 kΩ时,器件对阳极驱动电压的要求更高. 关键词： 平行栅碳纳米管阵列 悬浮球 场增强因子 接触电阻     

排列形状及阵列数目对纳米导线阵列场发射性能的影响

为了进一步研究纳米导线阵列的排列形状以及阵列数目对其场发射行为的影响，利用镜像悬浮球模型对正方形以及六边形排列的纳米导线阵列的场发射行为进行计算与模拟，近似的得到纳米导线阵列的场发射增强因子满足如下的变化趋势：β=h/ρ(1/1+W)+1/2(1/1+W)²+3,其中h为纳米导线的高度，ρ为纳米导线的半径，W是以R为自变量的函数，R为纳米导线阵列的间距.结果显示纳米导线阵列的排列形状对其场发射性能的影响较小，而阵列间距则是影响场发射性能的关键因素：当R<R₀时，场发射增强因子随着阵列间距的减小而急剧减小；当R>R₀时，场发射增强因子基本不变，其中R₀为导线阵列场发射的最佳间距.进一步研究表明改变纳米导线阵列的数目基本不会改变阵列的场发射性能随间距的变化趋势，但是随着阵列数目的增加，R₀会有一定程度的减小，场发射增强因子也会降低. 关键词： 纳米导线 场发射 增强因子 阵列数目     

纳米碳管阵列场增强因子的计算

采用悬浮球模型，结合对称的镜像电荷层方法，对静电场中纳米碳管阵列的场增强因子进行了计算，并在考虑极板间距的情况下，对其计算结果做了修正.结果表明：纳米碳管阵列的间距对纳米碳管阵列的场发射性能影响很大.当纳米碳管阵列中碳管间距小于碳管高度时，场增强因子随间距的减小而急剧减小；而当碳管间距显著大于碳管高度时，场增强因子几乎不变.但当考虑阴阳极之间单位面积通过的场发射电流时，可论证当管间距与管高度相若时，能使场发射电流密度最佳(最大).另外，极板间距对场增强因子的影响很小，但是可以通过减小极板间距，来降低纳米碳管作为场发射体的场发射的开启电压，优化纳米碳管的场发射性能. 关键词： 纳米碳管阵列 场增强因子 开启电压     

纳米碳管阵列场发射电流密度的理论数值优化

以纳米碳管阵列为研究对象,利用镜像悬浮球模型及Fowler-Nordheim电流密度公式,对纳米碳管阵列的场发射电流密度进行计算,进而综合考虑场发射增强因子及场发射电流密度对纳米碳管阵列场发射性能进行定量优化.参考碳管阵列场发射电流密度最大值及场发射增强因子,表明当纳米碳管阵列间距为碳管高度十分之一时,纳米碳管阵列的场发射性能得到优化.与以前的理论估算结果相比,优化的阵列间距进一步减小.当纳米碳管间距过大,场发射增强因子增加,而场发射电流密度会在更大程度上减小;当纳米碳管密度较大时,场发射增强因子受到静电 关键词： 纳米碳管 场发射 增强因子 电流密度     

碳纳米管/硅纳米孔柱阵列的场发射性能

"通过热化学气相沉积的方法将碳纳米管生长到硅纳米孔柱阵列衬底上．采用场发射扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜、拉曼光谱和X射线能谱对所制备的样品形貌、组成进行了分析．结果发现：所制备产物为一种具有面积大、准周期性的碳纳米管/硅巢状阵列复合结构．能谱分析表明碳纳米管仅含有碳元素．对样品进行场发射性能测试表明该结构开启电压为1.3 MV/m,当外加电压为4.26 MV/m,发射电流为5 mA/cm2．由FN公式计算相应的场增强因子约为1.1￡104．碳纳米管/硅纳米孔柱阵列好的场发射性能被归     

器件参量对栅极调制碳纳米管冷阴极的影响(英文)

基于电场叠加原理,利用悬浮球模型给出了带栅极纳米管顶端电场与电场增强因子,分析了碳纳米管与衬底之间的接触电阻、器件几何参量以及阴栅极之间的电介质对器件场发射性能的影响.结果表明:接触电阻大大降低了碳纳米管阴极的场发射电流,当接触电阻超过100kΩ时,发射电流密度非常小,此时需要更高的阳极开启电压;当阴栅极之间的电介质为真空时,阴极电子发射性能最佳;除了碳纳米管的长径比之外,栅孔半径、阴栅极间距以及阳极距离等的优化设计,也能提高器件发射性能;通过栅极偏压的调制,可以降低阳极驱动电压.     

利用胶体小球掩蔽刻蚀技术制备的半导体纳米阵列的场电子发射特性

利用胶体小球掩蔽刻蚀技术,制备了单晶硅纳米阵列,利用原子力显微镜观察了硅阵列的表面形貌,实验结果表明,硅柱阵列具有高密度和较好的均匀性。同时研究了单晶硅纳米阵列的场电子发射特性。为了提高样品的场发射性能,在所制备的单晶硅有序纳米阵列上生长了一层非晶碳薄膜。与单晶纳米硅柱阵列相比,覆盖有非晶碳膜的样品的场电子发射特性有了明显的改善,表现在场发射的开启电场下降,同时场发射增强因子得到增加。结果表明非晶碳膜确实能够降低电子发射的表面有效势垒,从而增强了场电子发射特性。     

电场诱导碳纳米管阵列准直生长的研究

在传统的热化学气相沉积(CVD)的基础上,引入针尖电场,开展了电场对碳纳米管阵列准直性改善的研究。利用扫描电子显微镜(SEM)和Raman光谱两种表征手段,研究了加电场与不加电场两种情况下得到的碳纳米管(CNT)阵列的准直性,证明了电场对碳纳米管阵列准直生长的有效性。文章还对电场诱导碳纳米管阵列准直生长的机理进行了初步的探讨,认为电场使碳纳米管极化是CNT阵列准直生长的主要原因。     

Numerical study on the field emission properties of aligned carbon nanotubes using the hybrid field enhancement scheme

The magnitude of the local electric field and the electron emission current density for an array of aligned carbon nanotubes is estimated. For describing in detail the properties of the local electric field in the vicinity of the nanotube tips, a hybrid method allowing for the local determination of the field enhancement factor is introduced. The field factor consists of two parts: an internal factor which describes the structure of the carbon nanotubes and an external factor which represents the field screening effect due to neighboring nanotubes. The current density is obtained using the Fowler–Nordheim equation with the hybrid field enhancement scheme. As a result, the emission properties for an array of nanotubes with a given length are described satisfactorily, and an optimum value for the nanotube spacing is determined. PACS 85.45.Fd; 85.45.Db     

Field emission from self-assembly structure of carbon-nanotube films

Chemical vapor deposited (CVD) carbon nanotube (CNT) arrays were immersed in ethanol to make shrunk structures with separate nanotube “walls” for better field emission properties, such structures decreased the screening effects and reduced the turn-on electric field at 10 μA/cm² from 1.68 to 1.23 V/μm. The field enhancement factor was calculated to increase by 23% according to Fowler–Nordheim (F–N) equation. The number of emission sites also increased and their distribution was more uniform.     

丝网印刷制备碳纳米管阴极的强流脉冲发射特性研究

采用丝网印刷法制备了一种大面积的碳纳米管阴极,表征了阴极表面碳纳米管的形貌及分布.研究了该阴极在不同脉冲条件下的高压脉冲发射特性,分析了发射时阴极面等离子体产生和发射点的分布.研究表明：碳纳米管阴极的脉冲发射机制为爆炸电子发射,在平均场强为16.7V/μm的单脉冲电场下,阴极的最高发射电流密度为99 A/cm².在平均场强为15.4 V/μm的双脉冲电场下,阴极的最高发射电流密度为267 A/cm².碳纳米管阴极可以作为强流电子束源在高能微波器件中得到应用. 关键词： 强流脉冲电子束 碳纳米管 阴极 丝网印刷     

Electron holography of field-emitting carbon nanotubes

Electron holography performed in situ inside a high resolution transmission electron microscope has been used to determine the magnitude and spatial distribution of the electric field surrounding individual field-emitting carbon nanotubes. The electric field (and hence the associated field emission current) is concentrated precisely at the tips of the nanotubes and not at other nanotube defects such as sidewall imperfections. The electric field magnitude and distribution are stable in time, even in cases where the nanotube field emission current exhibits extensive temporal fluctuations.     

Electron field emission properties of highly dense carbon nanotube arrays

In this paper, we have studied field emission properties of highly dense arrays of multi-walled carbon nanotubes (CNTs) used as cathodes in diode-type field emission devices with a phosphor screen. For the high-density CNT emitters it is demonstrated that the emission sites are located on the CNT-cathode edges, which is direct experimental evidence of the ‘edge effect’. The results of computer simulations (using ‘ANSYS Electromagnetic’ software) are presented to confirm the experimental data and to analyze the effect of patterning on the electric field distribution for high-density CNT arrays. It is shown that selective-area removal of nanotubes in the arrays leads to the formation of additional edges characterized by the high field enhancement factor and enhanced emission from the CNT cathodes. In addition, scanning probe microscopy techniques are employed to examine surface properties of the high-density CNT arrays. For CNT arrays of ‘short’ nanotubes, the work function distribution over the sample surface is detected using a scanning Kelvin microscopy method.     

Field emission of individual carbon nanotubes in the scanning electron microscope

The field emission of individual multiwall carbon nanotubes grown by chemical vapor deposition was measured in a scanning electron microscope. By using a sharp anode, we were able to select one nanotube for measurements in carefully controlled conditions. Single nanotubes follow the Fowler-Nordheim law, and the dependence of the field enhancement with interelectrode distance and nanotube radius is in good agreement with the recent model of Edgcombe and Valdré. Our results suggest that only nanotubes with the highest field enhancement factors, i.e., at least 8x higher than those of the average nanotube population, contribute to the emitted current in usual large area measurements.     

Electron field emission properties of closed carbon nanotubes

Recent experiments have shown that carbon nanotubes exhibit excellent electron field emisson properties with high current densities at low electric fields. Here we present theoretical investigations that incorporate geometrical effects and the electronic structure of nanotubes. The electric field is dramatically enhanced near the cap of a nanotube with a large variation of local field distribution. It is found that deviation from linear Fowler-Nordheim behavior occurs due to the variation of the local field in the electron tunneling region. The maximum current per tube is of the order of 10 microA. Local and microscopic aspects of field emission from nanotubes are also presented.