高重复频率飞秒激光对面阵CCD的干扰和破坏

 采用800 nm，100 fs的超短脉冲激光器对硅面阵CCD进行辐照实验，观测到饱和、串扰以及永久性损伤等多种可能造成成像器件失效的现象，特别是在激光能量较高时，发现CCD在成像时出现了黑白屏的现象。在飞秒激光器以1，10和1 000 Hz工作的条件下，分别测量了硅面阵CCD的饱和阈值、串扰阈值和破坏阈值。对破坏后的CCD器件进行了显微分析。在1 kHz工作的条件下进行了视场外干扰实验，观察到串扰和全屏饱和的现象。     

1.319μm连续YAG激光束对可见光面阵CCD系统的干扰研究

 利用1.319μm连续钇铝石榴石激光对可见光面阵CCD系统进行干扰实验，分析了该CCD系统发生干扰饱和的原因，计算了1.319μm激光辐照面阵可见光CCD的干扰饱和阈值，利用实验数据在定量上验证了计算结果。当像面上激光功率密度达到10²W/cm²量级时，CCD出现饱和串音，达到10²W/cm²量级时，出现全屏饱和。     

连续波CO2激光对多晶硅探测器干扰损伤实验研究

为进一步研究激光对光电探测器的干扰及损伤,利用10.6 m连续CO2激光辐照多晶硅光电探测器,进行了干扰与损伤阈值实验研究,得到了对多晶硅探测器的饱和干扰、损伤干扰阈值分别为5.5510-4 W/cm2、0.48 W/cm2;分析了不同干扰功率、不同干扰时间的干扰效果,依据探测器受干扰程度提出了将干扰等级划分为点饱和、中度饱和、重度饱和与点损伤4个等级;通过干扰激光功率与干扰光斑面积的变化关系,得到两者按幂函数y=76.3x0.29关系变化,并依据该变化关系探讨了10.6 m脉冲激光对红外成像系统的干扰效果。     

行间转移型CCD激光干扰效应阈值估算方法

电荷耦合器件(CCD)图像传感应用中,通过非实测手段获取器件的干扰效应阈值非常重要,有时甚至是唯一手段。分析了行间转移型CCD单像素饱和与串扰等典型激光干扰效应的影响因素,研究了垂直拖尾、光晕和串扰3种效应的物理本质间的内在联系与区别,初步证实垂直拖尾系数对串扰效应而言为非敏感参数。提出了基于饱和信号电荷量、像元尺寸、量子效率以及光晕抑制率等器件参数,从现有的效应数据预估相似器件单像素饱和阈值、串扰线饱和阈值的外推方法。对柯达面阵CCD器件的饱和阈值测量与干扰效应实验显示,预估结果与实验值之间的偏差量分别为3%和20%,属于可以接受的范围,表明预估方法切实可行。     

单CCD彩色相机激光干扰模型及外场干扰实验

开展了多波段激光(750~970 nm)对彩色CCD成像系统的外场干扰实验,测得了不同辐照条件下对外场1.3 km处彩色CCD成像系统的干扰效果;建立了彩色CCD相机的激光干扰模型,对实验结果进行了理论验证与分析。理论与实验结果表明:强激光对彩色CCD成像系统的干扰效果明显,CCD靶面出现了明显的光饱和和串扰现象,光饱和区域的形成是由激光束进入光学系统后发生衍射效应造成的;到靶激光功率密度越强,CCD靶面光饱和面积越大,激光干扰效果越好;单波段750 nm激光作用下,到靶功率密度为4.2 kW/cm²,CCD靶面的光饱和面积为0.88 mm×0.97 mm;多波段激光(750~970 nm)作用下,到靶功率密度为20.7 kW/cm²,CCD靶面发生全靶面饱和现象;仿真结果与实验结果基本一致,证明了理论模型的正确性。对远场干扰能力计算结果表明:随着干扰距离的增加,到靶功率密度减小,激光干扰效果变差。     

超连续谱激光干扰多色CCD探测器建模仿真研究

结合超连续谱激光器光谱辐射特性及多色CCD信号传递转换机理,建立了激光干扰多色CCD成像仿真模型。依据多色CCD工作原理,理论分析了饱和串扰信号转移规律;根据多色CCD结构,借助光学专业设计软件实现CCD像面激光能量空间分布特性研究;综合考虑饱和串扰信号转移规律及CCD像面激光能量空间分布,建立了超连续谱激光干扰单色CCD饱和串扰效应仿真模型,在此基础上结合多色CCD成像多色可视化原理,实现超连续激光干扰多色CCD输出图像仿真。最后,引入图像质量评价因子,研究了不同激光能量对多色CCD输出图像质量的影响。实验结果表明:激光功率密度是激光干扰效果的重要影响因子,随着激光能量增大,多色CCD输出图像质量下降。     

连续激光对3通道CCD相机的饱和干扰效应

为研究宽覆盖多光谱相机的激光干扰效应,利用红、绿、蓝3种波长激光对3通道CCD(3CCD)相机进行饱和干扰实验,测量得到了不同波长对应3CCD相机不同通道的饱和阈值,通过研究3CCD相机的工作原理,对一定波长辐照下3CCD不同通道饱和阈值差别进行分析,并在实验中对比研究了同一功率下,单波长和多波长耦合的饱和干扰效果,实验结果表明,多波长耦合要优于单波长的干扰效果。     

红外激光对可见光成像系统的硬损伤

采用波长为1315nm的连续波化学氧碘激光对某型摄像机进行了辐照实验,研究了可见光CCD成像系统在响应波段外红外激光辐照下的硬损伤效应。开展了光学系统变光圈尺寸下的激光辐照实验,发现当辐照水平一定的情况下,光圈尺寸越小,光学系统越难发生硬损伤,并解释了该现象的成因;测量到光圈尺寸最大、最小两种状态下的光学系统硬损伤功率阈值分别为几十W、几百W;得到CCD的激光损伤阈值为5.5×104W/cm2;结合相机输出的视频图像与显微镜拍到的被损感光器件实物照片分析了硬损伤机理。     

1 319 nm连续激光辐照皮肤组织的光热效应实验研究

实验测定了离体人皮肤组织在1 319 nm连续Nd:YAG激光辐照下径向和轴向不同位置的温度分布,研究了激光辐照功率密度和作用时间对皮肤组织温升分布的影响.结果表明,皮肤组织中的温度分布与探测位置、激光辐照功率密度以及作用时间密切相关;激光输出功率密度15.80 W/cm2时安全辐照时间阈值为120 s,功率密度48.92 W/cm2时安全辐照时间阈值为6 s.     

1.06 μm激光对CCD、CMOS相机饱和干扰效果对比研究

 为了对比激光对CCD、CMOS两种图像传感器的干扰效果,利用1.06 μm高重频激光开展了对CCD、CMOS两种相机的饱和干扰实验研究,分析了两种相机在干扰有效面积、饱和干扰面积、干扰前后图像相关度等与激光入射功率之间的关系。实验结果表明:CMOS相机达到单元像素饱和的激光功率阈值是CCD相机的20倍;要达到相同的干扰有效面积,所需的激光功率CMOS相机要大于CCD相机10倍～100倍;要达到相同的饱和像元数,所需的激光功率CMOS相机比CCD相机约大10倍～60倍。因此,CMOS相机要比CCD相机具有更好的抗1.06 μm激光干扰能力。     

Generation of nonclassical light upon resonant excitation of a semiconductor microcavity

Strong correlations in the fluctuations of the intensity of emission from a semiconductor microcavity under resonant laser excitation are observed. The intensity correlation function exhibits an unusual oscillatory behavior with an unexpectedly long oscillation period and decay time. The visibility of the correlation function reaches 0.81. Long oscillation times are attributed to the Rabi frequency characterizing weak coupling between the electromagnetic field of the semiconductor microcavity mode and long-lived exciton states localized by the random potential of the quantum well. For a laser excitation power density of 400 W/cm², the power density of the radiation emitted by the microcavity is 12 W/cm², which corresponds to the total flux of nonclassical light of 1.5 × 10¹⁵ photons/s from an excited spot 50 μm in diameter. Thus, a microcavity can serve as a bright emitter of nonclassical light.     

Effect of pulses from a high-power ytterbium fiber laser on a material with a nonuniform refractive index. I. Irradiation of yttrium oxide targets

The irradiation of Nd:Y₂O₃ targets with an absorption coefficient of 13–1.7 × 10³ cm^?1 using laser pulses with a duration of 0.1–3.5 ms and peak power of 200–700 W at a power density of (0.2–1.3) × 10⁶ W/cm² is studied. A relatively large spread of the delay times of laser plume, spike emission of the laser plume, cleavage of the front surface of the target, and greater ejection of substance from the crater in comparison with the effect of the CO₂-laser radiation with almost the same power are demonstrated. A numerical model of the effect of radiation on a target with a nonuniform refractive index is proposed to interpret the destruction of dielectric material (cleavage of the front surface) and the large spread of the delay times of the plume.     

488 nm连续激光晶化本征非晶硅薄膜的喇曼光谱研究

利用等离子增强化学气相沉积系统制备了本征非晶硅薄膜,并选用488 nm波长的连续激光进行晶化.采用喇曼测试技术对本征非晶硅薄膜在不同激光功率密度和扫描时间下的晶化状态进行了表征,并用514 nm波长与488 nm波长对样品的晶化效果进行了比较.测试结果显示:激光照射时间60 s, 激光功率密度在1.57×10⁵ W/cm²时,能实现非晶硅向多晶硅的转变,在功率密度达到2.7 56×10⁵ W/cm²时,有非晶开始向单晶转变,随着激光功率密度的继续增加,晶化结果仍为单晶;在功率密度为2.362×10⁵ W/cm²下,60 s照射时间晶化效果较好;在功率密度为2.756×10⁵ W/cm²和照射时间为60 s的条件下,用488 nm波长比514 nm波长的激光晶化本征非晶硅薄膜效果较好,并均为单晶态.     

Laser-jamming analysis of combined fiber lasers to imaging CCD

To complete a successful laser jamming to imaging charge coupled device (CCD) based on combined fiber lasers, the interactions between CCD and combined fiber lasers were analyzed in detail. The saturation and crosstalk thresholds of CCD were achieved, which are lower than 10 mW/cm². Through theoretical analysis and numerical simulations, the thermal processes under single pulse, multi-pulses and continuous laser irradiations were developed. The simulation results have proved the possibility of hard damage caused by multi-pulses and continuous laser irradiations. The combined fiber lasers is suitable to deploy optical saturation jamming at present. The further applications of combined fiber lasers need a more powerful laser source and a more accurate tracking and pointing system.     

Degradation of gallium arsenide under irradiation with an excimer laser

The results of a study of degradation of the surface of gallium arsenide resulting from irradiation with a power excimer laser at power densities ranging from the threshold power to the power level causing local melting of the surface are presented. Two degradation mechanisms have been identified, one of which causes the formation of a thin near-surface layer of modified nonstoichimetric gallium arsenide at a power level higher than 1×10⁷ W/cm² and the other of which causes the formation of a separate gallium phase. The formation of the separate gallium phase can be produced either by a single pulse of laser radiation with a power density exceeding 2.7×10¹¹ W/cm² or by a few less powerful pulses. An empirical relationship has been established between the power density and the number of pulses causing the formation of the separate gallium phase. It has also been established that as a result of laser irradiation at the boundary of “cold” and “hot” gallium arsenide, periodically ordered defects in the form of blocks aligned along the [100] directions emerge.     

Effect of air pressure on the spatial and emission characteristics of an aluminum laser torch under subthreshold conditions of ablation

The spatial characteristic of an aluminum laser-induced plasma are studied at a laser radiation intensity of (3.8–4.8) × 10⁸ W/cm² and an air residual pressure of 6.7–133.3 Pa. It is found that the duration of the aluminum plasma glow is 50 μs and decreases with decreasing laser power output. The glow intensity reaches a maximum at t = 1.4 μs and rises with laser energy. Typical sizes of the emitting area on the laser torch are determined.     

Laser-induced photoprocesses in solutions and films of the CdSe/ZnS nanoparticles

The photophysical properties of solutions and films with relatively high concentrations of CdSe/ZnS nanoparticles are studied in the presence of the visible laser irradiation in a wide range of power densities. The short-wavelength wing detected in the photoluminescence spectra of the solutions of quantum dots is due to the selective laser excitation of small-size nanoparticles. A comprehensive analysis of the anti-Stokes photoluminescence of the nanoparticles in solutions and films indicates the thermal mechanism of this phenomenon. The dimensional quantization effect, narrow spectra, and a relatively high luminescence yield are retained in the films with a high nanoparticle concentration. The luminescence spectra of the films remain unchanged when the laser flux density increases to 1 × 10⁶ W/cm². The effect of the laser radiation on the nanoparticle films is studied at the flux densities exceeding the damage threshold (5 × 10⁶–1 × 10⁹ W/cm²).     

CW CO2-laser annealing of arsenic implanted silicon

CW CO₂-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm⁻² for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm⁻² and the arsenic atoms are brought on lattice sites up to 96±2%. The maximum sheet carrier concentration of 6×10¹⁵ cm⁻² was obtained for 1×10¹⁶ cm⁻² implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900°C for 30 min.