量子计算与量子模拟中离子阱结构研究进展

离子阱系统是实现量子计算和量子模拟的主要体系之一.世界范围内的各个离子阱研究小组共同推动着离子阱结构的丰富化发展,开发出一系列高性能的三维离子阱、二维离子芯片、以及具有集成器件的离子阱系统.离子阱的结构逐渐向小型化、高通光性和集成化方向发展,并表现出卓越的量子操控能力—对多离子的囚禁能力和精确控制能力越来越高.本综述将总结过去的十几年里离子阱在结构上的演化历程,以及离子阱在量子计算与量子模拟实验研究中的最新进展.通过分析具有代表性的离子阱结构,总结离子阱系统在加工工艺、鲁棒性和多功能性等方面取得的进步,并对基于离子阱系统的可扩展量子计算与模拟作出展望.     

表面离子阱的衬底效应模型研究及新型离子阱设计

通过分析表面离子阱衬底的功率损失和电势损失对离子阱阱深和离子加热速率的影响,提出考虑衬底效应的阱深和离子加热速率的解析分析模型.研究发现,硅基衬底的电势损失对表面离子阱阱深的降幅达17.19%,功率损失对离子加热速率的加速达13.37%.为了降低衬底效应的不利影响,设计了衬底真空隔离结构的表面离子阱,在离子阱射频电极和直流电极间的衬底表面刻蚀出多条隔离槽,从而减小衬底的等效电导和等效电容,达到降低衬底功率和电势损失的目的.模拟结果显示,相比于一般结构,真空隔离结构的硅基表面离子阱能够使阱深加深20.22%,使衬底功率损失降低54.55%.     

Paul阱中存储离子的研究

根据Paul离子阱结构及电场分布特点,列出阱内离子运动方程并求解,对其中离子运动、硅团簇离子碰撞解离反应进行了分析.     

联合阱中稳定囚禁离子的实验研究

实验观察到了小型联合阱稳定囚禁离子的射频信号增强现象，并以此对联合阱囚禁离子的特性进行了讨论；同时，通过实验检测到的稳定囚禁离子的工作点范围与磁场强度的关系，在一定程度上验证了联合阱囚禁离子稳定区随磁场强度的变化趋势。     

射频离子阱中氖离子的电荷转移

本文报导的是存在射频离子阱中的氖离子与氖气的电荷转换率的测量，其结果好于Ｐｅｎｎｉｎｇ阱。     

Penning阱中离子谱的优化

根据Penning阱存储离子的探测原理,系统分析了阱内离子信号及信号本身的噪声、实验仪器及探测电路的噪声干扰,采用适当的品质因数和电子束流,得到较高信噪比和分辨率的离子谱。为深入开展Hn^＋（n≥3）对离子的形成机制、离子与中性气体原子或分子碰撞过程等问题的研究创造了更好的条件。     

射频阱中碳原子族离子同N2的化学反应

利用激光溅方法产生并在射频离子阱中的囚禁了碳原子的簇离子，进而利用离子阱质量选择存储和离子存储时间长等特点，研究了碳原子族离子同Ｎ２的化学反应，分析了Ｎ２分子在离子阱中活化的条件和过程，根据得到的大反应产物并结合化学反应热效应的计算。分析了碳原子簇离子同Ｎ２反应的主要通道，测得了相应通道的反应物与反应产物的分支比，推算了碳原子簇离子同Ｎ２反应的速率常数，分析了碳原子簇离子同Ｎ２的反应活性力簇尺寸奇     

Paul阱中离子运动及稳定性分析

Paul离子阱由于没有外加磁场所引起的塞曼效应的影响,已成为离子存储及研究离子的重要装置.根据在实验中所采用的Paul离子阱结构及电场分布特点,列出阱内离子运动方程并进行求解,对其中各种运动进行分析,同时还分析了离子存储稳定性.最后对所作的研究进行总结,得到如下结论:阱中离子的运动为谐振运动、基频微运动和高阶微振动.     

Penning阱中离子谱的优化及Hn^＋离子的分析

根据Penning阱存储离子的探测原理,系统分析了阱内离子信号及信号本身的噪声、实验仪器及探测电路的噪声干扰,采用适当的品质因数和电子束流,得到较高信噪比和分辨率的离子谱.并对Hn+离子的形成机制和结构进行了分析.     

电子束离子阱中高价态离子演化过程的数值模拟

讨论了电子束离子阱(EBIT)中决定高价态离子演化过程的主要物理机制.对EBIT中高价态离 子的演化过程进行了详细的数值计算并与实验进行了比较.讨论了EBIT各种不同的运行参数 对平衡时高价态离子相对丰度和温度的影响. 关键词： 电子束离子阱 高价态离子 数值模拟     

Semi-analytical model for quasi-double-layer surface electrode ion traps

To realize scale quantum processors,the surface-electrode ion trap is an effective scaling approach,including singlelayer,double-layer,and quasi-double-layer traps.To calculate critical trap parameters such as the trap center and trap depth,the finite element method(FEM) simulation was widely used,however,it is always time consuming.Moreover,the FEM simulation is also incapable of exhibiting the direct relationship between the geometry dimension and these parameters.To eliminate the problems above,House and Madsen et al.have respectively provided analytic models for single-layer traps and double-layer traps.In this paper,we propose a semi-analytical model for quasi-double-layer traps.This model can be applied to calculate the important parameters above of the ion trap in the trap design process.With this model,we can quickly and precisely find the optimum geometry design for trap electrodes in various cases.     

Penning阱中离子运动的分析

根据Penning离子阱结构及电磁场分布特点,列出阱内离子运动方程并进行求解,对其中沿z轴运动和在xy平面上的运动进行详细分析,最后得到比荷为m/q的离子在Penning阱内的运动为沿磁场方向的简谐振动、绕磁感线旋转的回旋运动和垂直于z轴及径向绕z轴的漂移运动的叠加.     

A grooved planar ion trap design for scalable quantum information processing

We describe a new electrode design for a grooved surface-electrode ion trap,which is fabricated in printed-circuitboard technology with segmented electrodes.This design allows a laser beam to get through the central groove to avoid optical access blocking and laser scattering from the ion trap surface.The confining potentials are modeled both analytically and numerically.We optimize the radio frequency(rf) electrodes and dc electrodes to achieve the maximum trap depth for a given ion height above the trap electrodes.We also compare our design with the reality ion chip MI I for practical considerations.Comparison results show that our design is superior to MI I.This ion trap design may form the basis for large scale quantum computers or parallel quadrupole mass spectrometers.     

Microfabricated ion traps

Ion traps offer the opportunity to study fundamental quantum systems with a high level of accuracy highly decoupled from the environment. Individual atomic ions can be controlled and manipulated with electric fields, cooled to the ground state of motion with laser cooling and coherently manipulated using optical and microwave radiation. Microfabricated ion traps hold the advantage of allowing for smaller trap dimensions and better scalability towards large ion trap arrays also making them a vital ingredient for next generation quantum technologies. Here we provide an introduction into the principles and operation of microfabricated ion traps. We show an overview of material and electrical considerations which are vital for the design of such trap structures. We provide guidance on how to choose the appropriate fabrication design, consider different methods for the fabrication of microfabricated ion traps and discuss previously realised structures. We also discuss the phenomenon of anomalous heating of ions within ion traps, which becomes an important factor in the miniaturisation of ion traps.     

A single trapped ion in a finite range trap

This paper presents a method to describe dynamics of an ion confined in a realistic finite range trap. We model this realistic potential with a solvable one and we obtain dynamical variables (raising and lowering operators) of this potential. We consider coherent interaction of this confined ion in a finite range trap and we show that its center-of-mass motion steady state is a special kind of nonlinear coherent states. Physical properties of this state and their dependence on the finite range of potential are studied.     

Grover search algorithm in an ion trap systen

Two schemes for the implementation of the two-qubit Grover search algorithm in the ion trap system are proposed. These schemes might be experimentally realizable with presently available techniques. The experimental implementation of the schemes would be an important step toward more complex quantum computation in the ion trap system.