LaNi5晶体表面态的计算研究

用"团簇埋入自洽计算法"对LaNi5晶体表面进行了全电子、全势场、自旋极化的从头计算.在原子纵向坐标充分弛豫的条件下,得到处于最低基态总能量下LaNi5晶体的非平整表面空间结构及其电子结构.LaNi5晶体最表面La原子向外凸出,Ni原子向里收缩,凹凸不平的表面层增加了表面原子与氢原子的接触面积;而表面层的有效体积增大了约9%,有利于氢原子的进入.LaNi5晶体表面态的费米能量大大高于体材料的费米能量.在费密面上主要是Ni的3d电子,价带未填满,显示金属性.LaNi5晶体表面第一、第二层有1.15个电子从La原子向Ni原子转移,这两层有反向的微小自旋磁矩,从而使表面显示顺磁性.得到了LaNi5晶体表面的价带电子态密度.用过渡态方法计算了LaNi5晶体表面的电离能和电子亲和势.所有计算结果显示:LaNi5晶体表面的性质与体性质显著不同,而与氢化物LaNi5H7的性质非常相近.这说明LaNi5晶体的表面结构有利于氢原子的吸收.     

GaN及其Ga空位的电子结构

用团簇埋入自洽计算法对宽禁带半导体GaN的电子结构进行了自旋极化的、全电子、全势场的从头计算,得到了与实验值符合的GaN晶体禁带宽度以及价带中N2p带、N2s带和Ga3d带之间的相对位置.在此基础上Ga空位计算(无晶格畸变)显示,Ga空位周围的费米面显著高于正常GaN晶格的费米面.因此Ga空位周围N原子的处于费米面上的2p电子很易被激发成正常晶格处的传导电子 关键词： GaN 电子结构 团簇埋入自洽计算     

Zr基大块非晶中添加元素对非晶形成能力及耐蚀性的影响

运用实空间递归方法研究了添加元素Nb，Ta，Y，La对Zr基非晶合金的非晶形成能力和耐腐蚀性能的影响.用计算机编程构造了Zr基非晶中初始晶化相Zr₂Ni的原子结构模型，用Zr₂Ni中的二十面体原子团簇模拟非晶中的二十面体团簇.计算了替代二十面体中心或顶角位置原子前后Ni，Zr及合金元素的局域态密度、团簇中心Ni与近邻Zr原子及Ni与替代元素Nb，Ta，Y，La间的键级积分，还计算了合金元素替代前后团簇的费米能级.局域态密度计算结果表明：合金元素Cu占据二十面体团 关键词： 电子结构 Zr基大块非晶 非晶形成能力 耐蚀性     

密度泛函理论研究Run和RunAu(n=1-12)团簇的结构和电子性质

采用密度泛函理论中的广义梯度近似(GGA) 对 Ru_n Au和Ru_n 团簇的几何构型进行优化,并对能量、频率、电子性质和磁性质进行了计算. 结果表明,Ru_n Au团簇的最低能量结构可以通过Au原子代替Ru_n+1团簇中的Ru原子生长而成.除了局域的结构畸变,Ru_n Au和Ru_n+1团簇具有相似的几何结构.二阶能量差分、电离势、亲和势和分裂能表明Ru₅, Ru₈, Ru₅Au, Ru₈Au 是稳定的团簇,Au的掺杂没有改变Ru_n 的相对稳定性.通过电子性质的分析发现,当Au原子掺杂在Ru_n 中,团簇的化学活性增加,且团簇的能隙主要由电子的配对效应决定;对于大多数团簇来说,Au原子掺杂提高了Ru_n Au的磁矩. 关键词： n Au和Ru_n 团簇')" href="#">Ru_n Au和Ru_n 团簇 几何结构 电子性质     

二维全同Nb4团簇在Cu(100)表面的结构稳定性和电子性质

使用基于密度泛函理论的第一性原理赝势法和超原胞模型，研究了吸附在Cu(100)表面上的二维有序排列的幻数团簇Nb₄的结构稳定性及其电子结构性质.计算表明，四面体结构和平面的菱形结构的Nb₄团簇都可以稳定地吸附在Cu(100)表面上，这个体系很可能有重要的应用前景.在Cu(100)表面上，菱形结构的Nb₄比四面体结构的Nb₄更稳定，从Nb₄团簇的四面体结构到菱形结构，需经过的势垒高度约为0.94eV/团蔟.电子结构的计算表明，在Nb₄吸附后，Cu(100)表面与Nb₄团簇间有明显的电荷重新分布，表面Cu原子的电子态密度也明显改变. 关键词： 4团簇')" href="#">Nb₄团簇 有序排列 结构稳定性 从头计算     

嵌入La和Gd原子的Si24笼团簇的稳定性

用梯度修正自旋极化密度泛函(DFT)电子结构计算，研究了具有T_h和D_2d对称性包裹La和Gd原子的Si₂₄富勒烯的稳定性.结果表明Gd@Si₂₄具有很高的磁性而La@Si₂₄的磁性完全猝灭.这些结果有可能导致Si基富勒烯团簇新的结构类型. 关键词： 24和Gd@Si₂₄包裹团簇')" href="#">La@Si₂₄和Gd@Si₂₄包裹团簇 自旋极化密度泛函 稳定性 电磁性质     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

Ga6N6团簇结构性质的理论计算研究

在密度泛函理论的基础上，对Ga₆N₆团簇进行了第一性原理、全电子、从头计算，得到了10种可能的三维空间结构及其电子结构.其中最稳定结构的一对GaN原子的平均结合能为9.748 eV，因此是可能存在的.但与他人计算的Ga₃N₃和Ga₅N₅相比，Ga₆N₆团簇可能不属于“幻数”团簇.最稳定结构的Ga₆N_{6 关键词： GaN 团簇 电子结构}     

Si10团簇成键条件和解离行为的密度泛函紧束缚研究

本研究利用遗传算法和基于密度泛函理论的紧束缚方法相结合的计算方法,研究了Si₁₀团簇的原子堆积结构的成键条件和电子性质.计算结果发现,Si₁₀团簇的最低能稳定结构表现为以一个三棱柱体为基础结构单元,在其3个侧面和一个底面堆积了四个金字塔堆积结构,形成了由四个金字塔包围三棱柱体的类球形结构.原子间成键强烈依赖于团簇中各原子紧邻原子的几何排布情况,原子间交叠电子布居数具有显著的方向性,随着键长增加迅速减小.由团簇中各原子成键条件的分析,可以判断Si₇团簇是Si₁₀团簇最容易形成的解离产物,然后出现的是Si₆团簇.     

HmTiSin(m=1～2;n=2～8)团簇结构、电子性质和红外光谱的密度泛函理论研究

近些年，由于硅半导体材料在微电子工业中的潜在应用，其理论和实验研究备受人们广泛关注。尤其是过渡金属掺杂的硅团簇材料在物理化学性质方面表现了极好的稳定性。这些主要归因于过渡金属含有未填满的d轨道电子，可以填充硅团簇表面的空轨道，减少团簇表面的悬挂键，进而提高整个掺杂硅团簇的结构稳定性，同时产生各种特殊光学、磁性和超导等性质。采用密度泛函理论DFT-B3LYP方法对H_mTiSi_n(m=1～2; n=2～8)团簇的几何结构和电子性质进行了理论计算，讨论了Ti掺杂硅团簇TiSi_n(n=2～8)及其氢化团簇基态结构的变化规律、解离通道和HOMO-LUMO能隙等特征。结果表明，随着Si原子数目的增加，在TiSi_n(n=2～8)团簇中其掺杂Ti原子依次吸附在团簇的棱、面及结构内部。当在掺杂团簇表面吸附氢原子时，都优于吸附在团簇的硅原子上，而且绝大多数的氢化结构采纳了TiSi_n团簇的骨架构型。解离能和HOMO-LUMO能隙的分析结果表明在团簇表面吸附两个H原子时能够明显提高整个团簇的结构稳定性。二阶能量差分的研究发现TiSi₂和TiSi₆团簇相对其他团簇具有较高的稳定性，同时两个H₁TiSi₇和H₂TiSi₇氢化团簇的稳定性更高。此外，模拟了这些氢化团簇的红外振动特征峰，对主要特征峰进行了归属。这些研究将为过渡金属掺杂硅基团簇材料的实验制备和表征提供重要的理论参考。     

Electronic structure of LaNi and its hydride LaNi H

The electronic structure of LaNi₅ and its hydride LaNi₅H₇ are obtained using the self-consistent cluster-embedding calculation method. The Fermi level of LaNi₅H₇ is 5.172 eV higher than that of LaNi₅. In both materials, the La 5d electrons locate nearby the Fermi levels, and make only a small contribution to the density of states (DOS) of the valence bands. There is no significant charge transfer from La to Ni in LaNi₅. But for LaNi₅H₇, there is a charge transfer of 1.16 electrons from La to H, and H atoms are combined mainly with Ni to form hybridized orbitals in the energy regions far below the Fermi level. An explanation of hydrogenation of LaNi₅ is proposed: It is easy for hydrogens to take off some localized La 5 d electrons near the Fermi level, and combine with Ni to form hybridized orbitals in lower energy regions. This process is therefore in favor of energy, and forces a lattice expansion until the Fermi level rises to zero. Received 13 July 2001 / Received in final form 10 December 2001 Published online 17 September 2002     

Density functional theory study on LaNi4.5Al0.5 hydride phase： electronic properties and sites occupation＊

In this paper the crystal structure, electronic structure and hydrogen site occupation of LaNi4.5Al0.5Hy hydride phase （y = 5.0, 6.0） have been investigated by using full-potential linearized augmented plane wave method. The hydrogen atoms were found to prefer the 6m, 12o and 12n sites, while no 4h sites were occupied. A narrowed Ni-d band is found due to the lattice expansion, the total density of states at EF increases with y, which indicates that the compounds become less stable. The interaction between Al and Ni, H plays a dominant role in the stability of LaNi4.5Al0.5 hydride phase. The smaller the shift of EF towards the higher energy region, the more stable the compounds will be. The obtained results are compared with experimental data and discussed in the light of previous works.     

PbWO4电子结构的密度泛函计算

采用基于密度泛函理论的相对论性离散变分和嵌入团簇方法模拟计算了PbWO₄晶体的本征能级结构.发现价带主要由O2p轨道组成,含有部分W5d轨道;导带主要由W5d和O2p的轨道组成.发现导带底由Pb6p_1/2的狭窄能级占有.禁带宽度和价带宽度分别约为4.8和4eV.计算结果很好地解释了实验得到的反射谱,并从理论上分析了PbWO₄晶体蓝光的发光模型. 关键词： 密度泛函 电子结构 4')" href="#">PbWO₄     

高温超导体MgB2的电子结构研究

用第一性原理能带理论计算了高温超导体MgB₂的电子结构.计算得出的电子能带说明MgB₂是一种宽能带化合物,价带主要由Mg和B原子s和p的杂化形成.费米能级处的态密度N(E_F)是0.72(states/eV).根据这些结果,初步推断出MgB₂的超导电性的微观机制不可能是电子声子耦合的BCS模型,而是有待于探索的新机制 关键词： 高温超导体 电子结构     

过渡金属(Fe,Co,Ni,Zn)掺杂金红石TiO2的电子结构和光学性质

采用基于密度泛函理论的第一性原理方法对未掺杂以及不同浓度过渡金属Fe,Co,Ni,Zn掺杂金红石TiO₂的超晶胞体系进行了几何优化,并讨论了其晶格常数,电子能带结构和光学性质.研究结果表明:掺杂前后的晶格参数与实验值偏差在3.6%以下;适量的过渡金属掺杂不但影响体系能带结构,拓宽光吸收范围,而且扮演着俘获电子的重要角色,有利于光生电子-空穴对的有效分离以及增强光吸收能力;Fe,Co,Ni,Zn最佳理论掺杂体系分别为Ti_0.75Fe_0.25O₂,Ti_0.75Co_0.25O₂,Ti_0.75Ni_0.25O₂,Ti_0.83Zn_0.17O₂;Fe,Co,Ni3d态分裂为t_2g和e_g态,分别贡献于价带高能级和导带低能级部分,促进了电子-空穴对的生成,从而可提高TiO₂的光催化性能;Zn3d态电子成对填满轨道,不易被激发,故光催化活性无明显提高.     

First-principles study of the crystal structures and electronic properties of LaNi5TxHey tritide

The micro-arrangement of helium atoms and electronic properties of tritides LaNi₅T_xHe_y (x=5, 5.5, 6, 6.5; y=0.5, 1.0) have been systematically investigated by means of the full-potential linearized augmented plane wave (FLAPW) method with the generalized gradient approximation (GGA). Those optimized results indicate that helium atoms prefer to occupy the tetrahedral interstitial sites (6c₁) in LaNi₅ tritides. From the analysis of the electronic structure, a strong and narrow peak appears in the low energy region (about −4.0 eV), which is due to the contribution of the He-s band. With increasing in the helium content, the empty band in the low energy region gradually moves to the right. Compared with H atoms, the interactions between He atom and La, Ni atoms are quite weaker, which can easily cause the pulverization of the host alloy.     

EFFECT OF TEMPERATURE ON ELECTRICAL RESISTIVITY OF A HYDROGENATED LaNi5 THIN FILM

The electrical resistivity of a hydrogenated LaNi₅ thin film has been investigated as a function of temperature in vacuum and in hydrogen. While the film was heated in vacuum for the first time, the change in resistivity exhibited different characteristics during different ranges of temperatures due to the competition of two effects owing to the lattice scattering of conductive electrons and the number of them. The resistivity had a sharp drop near 600 K, which originates from the formation of high conducting lanthanum hydride and nickel due to a reaction between the dissolved hydrogen and LaNi₅. The change in resistivity was not repeatable during the successive heating and cooling processes. When the film was heated under a hydrogen atmosphere, a drop in resistivity occurred near 700 K due to the reaction between LaNi₅ and the hydrogen atmosphere. The film showed a linear temperature dependence of receptivity with completeness of the reaction. It was found that the reaction was irreversible. The film lost the ability of hydrogen absorption after the reaction, and it had a phase change from LaNi₅ to LaH and Ni. This result was supported by X-ray diffraction patterns.     

S掺杂对锐钛矿相TiO2电子结构与光催化性能的影响

采用基于第一性原理的平面波超软赝势方法研究了掺杂不同价态S的锐钛矿相TiO₂的晶体结构、杂质形成能、电子结构及光学性质.计算结果表明硫在掺杂体系中的存在形态与实验中的制备条件有关；掺杂后晶格发生畸变、原子间的键长及原子的电荷量也发生了变化，导致晶体中的八面体偶极矩增大； S 3p态与O 2p态、Ti 3d态杂化而使导带位置下移、价带位置上移及价带宽化，从而导致TiO₂的禁带宽度变窄、光吸收曲线红移到可见光区.这些结果很好地解释了S掺杂锐钛矿相TiO₂在可见光下具有优良的光催化性能的内在原因.根据计算结果分析比较了硫以不同离子价态掺杂对锐钛矿相TiO₂电子结构和光催化性能影响的差别. 关键词： 2')" href="#">锐钛矿相TiO₂ S掺杂 第一性原理 光催化性能     

LaNi5的硫化物中毒及其再生的表面研究

本文概括了氢气中的硫化物(如H₂S,SO₂和CS₂)对LaNi₅的表面中毒和再生。AES,XPS的分析表明,三种硫化物的中毒性质不同:H₂S中毒产生La₂S₃和NiS这样的表面化合物;SO₂和CS₂中毒分别发生化学吸附和物理吸附。此外,从Ni(2P_3/2)谱峰强度变化,表明了在LaNi关键词：     

Electronic structures of hydrogen in perovskite-type oxide,SrTiO3

The electronic structures of hydrogen in SrTiO₃ are simulated by the DV-Xα molecular orbital method. In pure SrTiO₃, there is a band gap of about 3.5 eV between the O-2p valence band and the Ti-3d conduction band, in agreement with experiments. When Sc is doped into SrTiO₃, an acceptor level appears just above the valence band. On the other hand, when hydrogen is introduced into SrTiO₃, a donor level appears below the conduction band. The molecular orbital of the donor level is composed mostly of the Ti-3d and O-2p electrons, but still there is a small occupancy (6%∼12%) of the H-1s electrons in it. When both Sc and hydrogen coexist in SrTiO₃, charge transfer takes place from the donor level to the acceptor level. As a result of this charge compensation, the effective ionicity of hydrogen becomes about +0.17∼+0.24, the value of which is dependent on the hydrogen positions in the crystal lattice. Also, the chemical bond strengths between constituent ions are modified largely by dopants. For example, the Sc doping tends to strengthen the chemical bond between hydrogen and oxygen ions, but instead to weaken the chemical bond between the oxygen ion and the surrounding metal ions. In addition, it is shown that an oxygen ion vacancy makes the defect level below the conduction band in the Sc-doped oxide.