Y替代La2/3Ca1/3MnO3体系的结构与输运行为

系统研究了(La1-xYx)2/3Ca1/3MnO3(0.0≤x≤0.3)体系的结构和输运行为.结果表明，实验样品具有很好的单相结构，随Y掺杂浓度的增加，金属—绝缘体（M—I）转变温度T-MI向低温区移动，对应的峰值电阻率ρp升高，对x=0.3样品，较未替代样品（x=0.0）增幅达8个数量级.在外加磁场下，材料表现出很强的磁电阻效应.同时，从实验结果出发，直接给出了输运特性与晶体结构之间的关联，并从双交换模型和可变程跃迁理论出发，对实验结果进行了初步讨论. 关键词： La2/3Ca1/3MnO3锰氧化物 Y替代 晶体结构 输运行为     

La2/3Ca1/3MnO3超薄膜应力弛豫过程及性质研究

锰氧化物庞磁电阻材料超薄膜的应力弛豫特性的研究对理解这一强关联体系的特性及应用都具有重要的意义.为此,我们研究了不同温度退火的La2/3Ca1/3MnO3/LaAlO3超薄膜的形貌、结构、电输运特性等.发现退火导致的应力弛豫对薄膜的性质有很强的调制作用,其电输运性质及结构呈现明显的阶段性变化过程,我们提出了一个高温应力弛豫模型对所观察到的实验现象进行了解释.实验中观察到的规则的自相似网状纳米结构,显示了薄膜应力弛豫过程中自组织生长的分形特征.     

Ba(Mg1/3Nb2/3)O3电子结构第一性原理计算及光学性能研究

Ba(Mg_1/3Nb_2/3)O₃ (BMN)复合钙钛矿陶瓷具有高介电常数和高品质因子等介电性能, 预示了其在光学领域的应用前景. 本文采用第一性原理方法计算了BMN的电子结构, 对其本征光学性能进行分析和预测. 对固相合成六方相BMN的XRD 测试结果进行Rietveld精修(加权方差因子R_wp=6.73%, 方差因子R_p=5.05%), 在此基础上建立晶体结构模型并对其进行几何优化. 运用基于密度泛函理论(DFT)的平面波赝势方法, 对六方相BMN晶体模型的能带、态密度和光学性质进行理论计算. 结果表明BMN的能带结构为间接带隙, 禁带宽度E_g=2.728 eV. Mg-O和Ba-O以离子键结合为主, Nb-O以共价键结合为主, 费米面附近的能带主要由O-2p和Nb-4d 态电子占据, 形成了d-p轨道杂化. 修正带隙后, 计算了BMN沿[100]和[001]方向上的复介电函数、吸收系数和反射率等光学性质. 结果表明, BMN近乎光学各向同性, 在可见光区, 其本征透过率为77%< T <83%, 折射率为1.91< n <2.14, 并伴随一定的色散现象. 实验测试结果与理论计算结果相吻合.     

Reversal transient laser-induced voltages in La2/3Ca1/3MnO3 films

This paper reports that the transient laser-induced voltages have been observed in La2/3Ca1/3MnO3 thin films on MgO （001） in the absence of an applied current. A peak voltage of - 0.15 V was detected in response to 0.015J pulse of 308 nm laser. It is demonstrated that the signal polarity is reversed when the films are irradiated through the substrate rather than at the air/film interface. Off-diagonal thermoelectricity may support the inversion of the signal when the irradiation direction is reversed.     

LiMBO3 : Dy3+材料的发光特性

采用固相法制备了LiM(M=Ca, Sr, Ba)BO₃ : Dy³⁺材料,并研究了材料的发光特性。LiM(M=Ca, Sr, Ba)BO₃ : Dy³⁺材料的发射光谱均呈多峰发射,对应于Ca,Sr,Ba,其主发射峰分别是Dy³⁺的⁴F_9/2→⁶H_15/2(484,486,486 nm),⁶H_13/2(577,578,578 nm)和⁶H_11/2(668,668,666 nm)跃迁。监测黄色发射峰时,所得激发光 谱峰值位置相同,主激发峰分别为331,368, 397,433,462,478 nm,对应Dy³⁺的⁶H_15/2→ ⁴D_7/2,⁶P_7/2,⁶M_21/2,⁴G_11/2,⁴I_15/2和⁶F_9/2跃迁。研究了敏化剂Ce³⁺及电荷补偿剂Li⁺、Na⁺和K⁺对LiM(M=Ca, Sr, Ba)BO₃ : Dy³⁺材料发光强度的影响。结果显示:加入敏化剂Ce³⁺提高了材料的发光强度,发光强度最大处对应的Ce³⁺浓度为3%;加入电荷补偿剂Li⁺、Na⁺和K⁺后,材料的发光强度也得到了明显提高,但发光强度最大处对应的Li⁺、Na⁺和K⁺浓度不同,依次为4%、4%和3%。     

CuO/Al2O3、CuO/CeO2-Al2O3和CuO/La2O3-Al2O3催化剂中CuO物种被CO氧化的比较

用浸渍法制备了CuO/Al2O3 (Cu/Al)、CuO/CeO2- Al2O3 (Cu/CeAl)和CuO/La2O3-Al2O3(Cu/LaAl)催化剂. 通过原位XRD、Raman和H2-TPR方法， 对催化剂中的CuO物种以及CuO-Al2O3的固-固相反应进行了表征. 结果表明，对于Cu/Al催化剂，CuAl2O4存在于CuO与Al2O3层之间，CuO以高分散和晶相两种相态存在于催化剂的表层；对于Cu/CeAl催化剂，除了少量高分散和晶相的CuO存在于表层外，大部分CuO迁移到了CeO2的内层，     

水热法合成纳米晶NaYF4 : Er3+,Tm3+,Yb3+ 的上转换发光特性

以EDTA为络合剂,用水热法合成了Er³⁺,Tm³⁺和Yb³⁺共掺杂的NaYF₄纳米晶。XRD和TEM的结果表明:粒径约为30 nm,属于六方晶系。在980 nm半导体激光器激发下,研究了不同Er³⁺离子掺杂浓度对Tm³⁺和Er³⁺离子上转换发光性能的影响,光强与泵浦功率的双对数曲线表明,474,525,539,650 nm的发射均属于双光子过程,408 nm的发射属于三光子过程。讨论了样品的协作敏化和声子辅助共振能量传递的上转换发光机制。     

LaAlO_3/SrTiO_3界面增强光伏效应

探索LaAlO_3/SrTiO_3(LAO/STO)界面产生的新奇物理特性对理解关联电子系统中多自由度耦合和设计功能材料器件具有重要的价值.本文通过脉冲激光沉积方法在SrTiO_3基底上制备了LAO/STO薄膜,研究了正面照射LAO/STO膜面和侧面照射LAO/STO界面时的光伏效应,探讨了LAO/STO界面对光伏效应的影响.研究结果表明,在同样光照能量下侧面照射LAO/STO界面产生的光电压远高于正面照射LAO/STO膜面产生的光电压,说明LAO/STO界面对光伏效应有明显的增强作用.通过偏压调控可以进一步增强照射LAO/STO界面产生的光电压,当偏压为60 V时, LAO/STO样品的位置探测灵敏度达到了36.8 mV/mm.这些研究结果为设计场调控位置敏感探测器等新型光电子器件提供了新的思路.     

Er3+/Tm3+共掺碲酸盐玻璃光谱特性及能量传递

采用高温熔融法制备了两系列不同掺杂比的Er³⁺/Tm³⁺共掺的碲酸盐玻璃,测试了样品的吸收光谱和在980 nm LD激发下的发光光谱、上转换发光光谱及发光寿命。讨论了Er³⁺与Tm³⁺掺杂浓度对样品光谱性质的影响,Tm³⁺离子的掺入会减弱Er³⁺的1.53 μm发光强度,但通过共振能量传递可以获得Tm³⁺的1.8 μm发光,并随着Tm³⁺离子浓度的增加而增强。同时表明Tm³⁺离子的增加会减弱Er³⁺离子在528 nm和545 nm附近的上转换绿光强度,而上转换红光出现了先增强后减弱的现象。研究了Er³⁺/Tm³⁺共掺杂碲酸盐玻璃的能量传递机制与传递效率,分析了Tm³⁺/Er³⁺离子掺杂浓度比对上转换发光的影响。     

纳米晶Gd2O3 ∶ Eu3+的制备与发光性质

利用共沉淀法制备了纳米晶Gd₂O₃ : Eu³⁺发光粉体。 在不同掺杂浓度、不同煅烧温度的系列样品中,均观测到Eu³⁺离子的特征发射。样品的晶相与发射性质的研究表明:所制备的样品经800~1 300 ℃热处理后,晶相为立方相,1 400 ℃时开始向单斜相转变。荧光强度与Eu³⁺离子掺杂浓度关系研究表明:在不同掺杂浓度中,Eu³⁺离子浓度为4%时其相对发射强度最强。在三个不同的煅烧温度中,经800 ℃煅烧的样品其发光效果最好。此外还观察到电荷转移激发态以及基质、Gd³⁺与Eu³⁺之间的能量传递。激发谱包含三部分,即电荷转移带、Eu³⁺的4f内壳层电子跃迁和Gd³⁺的激发谱。     

Nanoscale multiphase separation at La(2/3)Ca(1/3)MnO3/SrTiO3 interfaces

55Mn nuclear magnetic resonance experiments are reported on a series of fully strained epitaxial La(2/3)Ca(1/3)MnO3 thin films on SrTiO3. We have found evidence of multiple phase segregation into ferromagnetic metallic and nonmetallic regions as well as regions that are nonferromagnetic and insulating. These insulating regions are mainly located close to interfaces and may have a significant impact on the performance of spin-tunnel devices. As a result of phase segregation, the ferromagnetic coupling within the metallic regions is depressed. This accounts for the reduction of the Curie temperature and conductivity in nanometric thin films.     

掺杂锰基氧化物中的相分离和渗流效应

目前，相分离仍是锰基氧化物超大磁电阻材料研究的热点，渗流效应假设已广泛用于解释其电输运特性．作者用变温磁力显微镜首次在La0.33Pr0.34Ca0.33MnO3薄膜中直接观察到了渗流过程，微观上证明了渗流效应假设的正确性．实验发现，降温过程中电阻率的陡降是铁磁金属相的渗流效应引起的，升温过程中电阻率的上升，则是由导电路径上磁畴的磁化强度随温度的升高而降低引起的，而导电路径一直存在．微观的磁回滞和宏观的电阻回滞相吻合．当然要定量解释锰氧化物中的超大磁电阻效应还需要做大量的理论和实验工作．     

La0.67Ca0.33MnO3薄膜中的各向异性应变与电荷有序

本文采用脉冲激光沉积法在NdGaO3(001)单晶衬底上制备了一系列的La0.67Ca0.33MnO3薄膜,实验主要研究了薄膜的输运性质.La0.67Ca0.33sMnO3块材是铁磁金属基态,而La0.67Ca0.33MnO3/NdGaO3(001)薄膜由于各向异性应变的存在,可以观测到电荷有序绝缘相的出现.薄膜样品表...     

对靶溅射技术制备的La2/3Ca1/3MnO3/YBa2Cu4O8/La2/3Ca1/3MnO3薄膜中Tc的降低

本文用对靶溅射技术制备了La2/3Ca1/3MnO3/YBa2Cu4O8/La2/3Ca1/3MnO3薄膜.与YBCO单层薄膜相比,由于超导/铁磁系统中的磁性邻近效应,三层薄膜表现出较低的超导转变温度.薄膜的R～T测量曲线显示出超磁阻(CMR)效应和超导转变,预示着超导和铁磁特性共存于LCMO/YBCO/LCMO三文治结构.     

Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

Effects of the surface layer of La2/3Ca1/3MnO3 thin films

The surface layer effects on transport in epitaxial La_2/3Ca_1/3MnO₃ thin films are studied. It was found that the two-probe resistance is nonlinear which is enhanced with decreasing temperature. Similar to the resistance of intrinsic La_2/3Ca_1/3MnO₃ thin films reported in the literature, the apparent dynamic contact resistance behaves semiconducting at high temperatures, passes through a peak, and displays a metallic behavior. At lowest temperatures, the curve of the contact resistance versus temperature shows a little upturn. The temperature dependent work function difference between the surface layer and the thin film underneath, together with the tunneling process across either the resulting charge depleted layer or the semiconducting surface layer is used to explain our observations.     

微纳米加工技术对La2/3Ca1/3MnO3材料性能影响的研究

利用脉冲激光沉积(PLD)方法制备了La2/3Ca1/3MnO3(LCMO)外延薄膜.然后利用微纳米加工技术对LCMO薄膜材料进行了局部改造,制造出宽度仅为83纳米的弱联接结构,并对此进行了一系列的物性改变研究.发现在测量电流不变(1μA)的情况下,R～T曲线在120K附近有一个尖锐的跳变,跳变的温度区间很窄.此外,测量电流和外加磁场的增加,都能对跳变现象产生抑制作用.目前认为这种现象的产生是由于相分离的原因导致的.     

Magnetoreflection and Kerr Effect in La2/3Ba1/3MnO3 Films with a Variant Structure

Optics and Spectroscopy - A correlation between the effect of magnetoreflection of natural light and tunnel magnetoresistance has been found in La2/3Ba1/3MnO3 films with a variant structure grown...     

Thermal and electronic transport properties and two-phase mixtures in La(5/8-x)Pr(x)Ca(3/8)MnO3

We measured thermal conductivity kappa, thermoelectric power S, and electric conductivity sigma of La(5/8-x)Pr(x)Ca(3/8)MnO3, showing an intricate interplay between metallic ferromagnetism (FM) and charge ordering (CO) instability. The change of kappa, S, and sigma with temperature (T) and x agrees well with the effective medium theories for binary metal-insulator mixtures. This agreement clearly demonstrates that with the variation of T as well as x, the relative volumes of FM and CO phases drastically change and percolative metal-insulator transition occurs in the mixture of FM and CO domains.