手性环状碳纳米管的电子结构及磁化特性

基于石墨平面π电子的紧束缚模型,导出了手性(chiral)环状碳纳米管(TCNTs)在磁场中的电子结构,从而对TCNTs量子特性和磁化规律进行了较深入研究.第Ⅰ,Ⅱ类TCNTs在磁场中存在金属—半导体的连续转变.计算分析表明:在T=0K时,第Ⅰ,Ⅱ类TCNTs的磁化强度随磁通量Φ呈线性周期性变化(以磁通量子Φ₀=h/e为周期),并且磁化强度对手性角θ、管口半径r,以及温度T极为敏感,但与环半径R无关.手性TCNTs的磁化强度比椅形或锯齿形TCNTs的磁化强度强很多;而第Ⅲ类TCNTs 关键词： 手性环状碳纳米管 电子结构 磁化特性     

手性ABM态p波超导体上临界磁场的角依赖关系

利用格林函数方法,通过Klemm-Clem变换,计算具有正交晶格结构椭球形费米面的手性ABM态p波超导体上临界磁场的角依赖关系.超导序参量选取具有手性ABM对称性的等自旋配对单分量形式.当椭球形费米面满足一定条件时,上临界磁场随角度呈现非单调变化,表明除配对电子有效质量的各向异性外,手性ABM态p波超导体也具有超导序参量的各向异性.计算结果可用于判断重费米子超导体Sr2RuO4的配对电子空间结构.     

压缩角对介观耦合电压缩效应的影响

从无耗散的电感耦合是电路的经典运动方程出发,研究了压缩真空态下介观电感耦合电路中电荷和电流的量子涨落;着重分析了压缩幅角参数对电荷和电流量子压缩效应的影响,结果表明：在任意幅角θ下,电荷或电流的量子涨落不是随压缩参数r增加而单调地减小,而是存在着一个极小值。     

超导弱连接中的Josephson电流在一个磁通量子内的振荡(Ⅱ) 单结超导环

本文指出处在高Q值谐振腔中的单结超导环,当Josephson电流的n次倍频与外腔发生谐振时,由于在腔内形成的驻波电磁场对单结超导环自身的反馈作用,将导致在原来的以φ_0为周期的超流电流锯齿波振荡上迭加一个周期为φ_(0/n),振幅为锯齿波振幅的2/nπ的正弦形小振荡。     

嵌入T型耦合双量子点介观A-B环系统的显著Fano 效应

利用平均场近似理论,研究了一个嵌入T型弱耦合双量子点的介观环系统的基态性质. 结果表明,体系中复杂的基态性质源于Kondo效应与Fano效应相互竞争. 当介观环的尺寸达到足以产生完全Kondo共振时,随双量子点间耦合强度的增强,尖锐的持续电流峰出现了,且越发显著,这说明体系中存在着显著的Fano 效应. 但介观环的Kondo共振持续电流峰值却几乎不发生变化,这为测定Kondo 屏蔽云提供了一个新的可能模型. 关键词： 耦合量子点 持续电流 Kondo效应 Fano 效应     

超导弱连接中的Josephson电流在一个磁通量子内的振荡(Ⅱ)——单结超导环

本文指出处在高Q值谐振腔中的单结超导环,当Josephson电流的n次倍频与外腔发生谐振时,由于在腔内形成的驻波电磁场对单结超导环自身的反馈作用,将导致在原来的以φ₀为周期的超流电流锯齿波振荡上迭加一个周期为φ_0/n,振幅为锯齿波振幅的2/nπ的正弦形小振荡。 关键词：     

低偏压下单层碳纳米管的输运特征

系统地计算了各种手性碳纳米管最低导带的电子速度和有效质量的变化规律,在此基础上推断手性碳纳米管低偏压下的输运特征,计算表明:在低偏压电子输运时,同一系列(手性角相同)的各种手性金属碳纳米管的输运性质相同,与管径无关,但不同系列的手性金属碳纳米管的输运性质有明显区别;而同一系列的各种手性半导体型碳纳米管的输运性质有一定差异,但不同系列的手性半导体型碳纳米管的输运性质有着显著差异.这一结果说明:碳纳米管在低偏压下的输运特征与系列有着密切的关系,手性角是决定各种碳纳米管在低偏压下具有不同输运性质的最关键的几何参 关键词： 碳纳米管 手性角 电子速度 有效质量     

Quantitative Surface Chirality Detection with Sum Frequency Generation Vibrational Spectroscopy: Twin Polarization Angle Approach

介绍了一种新的表面和频振动光谱方法: 定量手性检测中的双偏振角方法. 一般来讲表面光谱信号中非手性项贡献最强,而纯界面手性信号要比非手性信号弱两到三个数量级. 因此在和频振动光定量测量和分析界面手性的贡献问题上存在困难. 在和频振动光谱的双偏振角方法中,通过固定入射红外光偏振方向,并同时改变入射可见光和初涉和频信号光的偏振角进行测量. 这样所得到的偏振依赖的和频振动光谱信号能够直接给出界面手性贡献的特征,并 且能够用于准确测量界面的手性和非手性贡献. 对双偏振角方法进行了描述,并且通过S和R手性的柠檬烯空     

矢势A场中二维超导感应电流的干涉

在二维超导金属面上,用被超导屏蔽的距离为d的两无限长直磁通垂直穿过,开始dφ/dt≠0,并在二维超导金属面上感应两个反向等值电流,然后使dφ/dt=0且两磁通皆维持φ0不变.本文计算并模拟了二维超导金属面上感应电流的干涉分布流线.我们称这一效应为L-J效应,它是A场中的超导感应电流干涉效应.     

嵌入单量子点Aharonov-Bohm环中的近藤效应

使用单杂质的Ansderson模型, 从理论上研究了一个嵌入单量子点Aharonov-Bohm环系统处在 近藤区时的基态性质, 并用slave-boson平均场方法求解了该模型.结果表明：在零温, 当介 观环内电子平均能级间隔大于近藤关联能时, 系统内仍然存在一个被减弱了的近藤效应；系 统的基态性质依赖于系统的宇称和环的大小；而尺寸效应和近藤屏蔽效应的共存导致了系统 丰富的物理性质.同时, 可以通过测量介观环中的持续电流和杂质磁化率, 达到探测近藤屏 蔽云的目的. 关键词： 持续电流 杂质磁化率 宇称效应 近藤效应 近藤屏蔽云     

Stimulated brillouin scattering of alfvén wave in a highly collisional magnetoactive compensated semiconductor: Kinetic theory

Summary A rigorous theoretical investigation has been made on stimulated Brillouin scattering of electromagnetic Alfvén wave propagating in a highly collisional magnetoactive compensated semiconductor,viz. compensated germanium. By using the Krook-model solution, the Boltzmann transport equation has been solved to obtained the non-linear response of electrons and holes in the semiconductor sample immersed in an external static magnetic field. It is noticed here that the threshold of this parametric instability is quite low and the growth rate of it is considerably large at moderate power of the incident Alfvén wave. It is also noted that the effect of the electron-phonon collision frequency on this three-wave parametric process is remarkable and its growth rate decreases very rapidly with the electron-phonon collision frequency in the semiconductor.     

Photoelectronic properties of the Zn x Cd1−x In2S4 system

Summary Photoelectrical investigations on the Zn _x Cd_1−x In₂S₄ system have been carried our particularly with respect to the high residual conductivity and the long-relaxation-time properties. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

Photoelectric effect in some alloys in the region of absorption edges

Summary Photoelectric effect in alloys using the transmission method in the energy range (17.8÷138) keV, at energies in the region of absorption edges of the various elements in the alloys, have been measured and compared with the respective theoretical estimates.     

An optimization model for amorphous solar cells in which optical,electrical and recombination properties are specified

Summary A model for determination and optimization of the fundamental parameters defining the quality of amorphous solar cells in which optical, electrical and recombination properties are specified is developed. It can be applied to any amorphous solar-cell systems. This paper gives theoretical expressions and describes an iterative method of numerical calculation for the current density of different cells. Results of computer calculations based on this model are presented.

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Riassunto In questo lavoro si presenta un modello per la determinazione e l'ottimizzazione dei parametri fondamentali atti a definire la qualità delle celle solari amorfe, specificando le proprietà ottiche, elettriche e di ricombinazione. Esso può essere applicato a qualunque sistema di celle solari amorfe. Sono fornite le espressioni teoriche ed è descritto un metodo iterativo per il calcolo numerico della densità di corrente di alcuni tipi di celle. Sono anche presentati i risultati ottenuti da calcoli eseguiti col computer e basati su questo modello.

     

Photoconductivity of Cu x Ag1−x Cd2InTe4

Summary The prominent photoelectric parameters of the semiconducting solid solutions Cu _x Ag_1−x Cd₂InTe₄ are reported. From the spectral dependence of photoconductivity at room temperature and at 77 K the energy gaps and their thermal coefficients are obtained. The detectivityD ^*, the photocurrent gainG and the carrier lifetime are measured and the carrier mobility is deduced. In order to improve theD ^* characteristics, the analysis of its parameters is also performed. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

Detection of Mn pinned level in Cd1−x Mn x Se monocrystals by the photoconductivity technique

Summary The photoconductivity of the magnetic semiconductor compound Cd_1−x Mn _x Se has been studied at 300 K and at 77K for the first time for several Bridgman-grown single crystals. With this technique it was possible to detect the Mn 3d level. Experimental data found in this investigation reveal that the Mn 3d level is pinned at 1.9 eV below the bottom of the conduction band,i.e. it is independent of temperature and insensitive to the amount of manganese. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982.     

Diastereofacial selectivity in some 4‐substituted (X) 2‐adamantyl derivatives: electronic versus steric effects

π‐Facial selectivity data for the reduction and methylation of some 4^ax‐substituted (X) 2‐adamantanones ( 3 , Y = O) as well as the nucleophilic trapping of secondary and tertiary 4^ax‐substituted (X)‐2‐adamantyl cations ( 4 ; R = H and CH₃, respectively) and the 4‐methylene‐2‐adamantyl radical ( 8 ) are presented. The pronounced anti‐face selectivities observed for ( 3 , Y = O and 4 , R = CH₃) emphasize the importance of the steric factor as expected for systems with a strong steric bias. However, the dominant syn‐face capture of 4 (R = H) was completely unexpected and highlights a subtle interplay between steric and electronic effects. Finally, the very high anti‐face stereoselectivity for the trapping of ( 8 ) with the trimethylstannyl anion (Me₃Sn^?) is rationalized in terms of an electrostatic effect overwhelming the steric factor. Copyright © 2007 John Wiley & Sons, Ltd.     

碘杂环类化合物的13C NMR谱研究

合成了一系列含不同杂原子的3,6二硝基二苯并六元碘杂环类化合物,应用¹³C-¹H COSY谱对它们的¹³C NMR谱峰进行了归属,讨论了杂原子及碘离子对谱峰的影响情况.     

Quantum shape effects and novel thermodynamic behaviors at nanoscale

Thermodynamic properties of confined systems depend on sizes of the confinement domain due to quantum nature of particles. Here we show that shape also enters as a control parameter on thermodynamic state functions. By considering specially designed confinement domains, we demonstrate how shape effects alone modify Helmholtz free energy, entropy and internal energy of a confined system. We propose an overlapped quantum boundary layer method to analytically predict quantum shape effects without even solving Schrödinger equation or invoking any other mathematical tools. Thereby we reduce a thermodynamic problem into a simple geometric one and reveal the profound link between geometry and thermodynamics. We report also a torque due to quantum shape effects. Furthermore, we introduce isoformal, shape preserving, process which opens the possibility of a new generation of thermodynamic cycles operating at nanoscale with unique features.     

Double-resonant structure in the high-frequency transresistance of coupled electron-hole systems

The linear dc and high-frequency transresistivity of coupled electron-hole systems are investigated using the Lei-Ting balance equations approach extended to include many-body corrections. A possible indirect method of experimentally measuring the dynamical transresistivity in the high frequency (terahertz) regime is designed basing on the detailed analysis on the relationship between the directly measurable resistivities in the electron- and hole-layer and the dynamical transresistance. The theoretically predicted dc transresistance is in good agreement with the experimental data for the given electron-hole system experimentally investigated. The calculated dynamical transresistance exhibits pronounced double-resonant structure, which can be attributed to the cooperation and competition between the two plasmon modes. It is pointed out that the behavior of the frequency-dependent transresistance is temperature-sensitive and the dynamical transport properties are essentially influenced by the short range correlations. Received: 1st April 1998 / Revised: 22 June 1998 / Accepted: 6 August 1998