Ultra-broad near-infrared emission of Bi-doped SiO2 Al2O3 GeO2 optical fibers

Bi-doped SiO 2 –Al 2 O 3 –GeO 2 fiber preforms are prepared by modified chemical vapor deposition (MCVD) and solution doping process. The characteristic spectra of the preforms and fibers are experimentally investigated, and a distinct difference in emission between the two is observed. Under 808-nm excitation, an ultra-broad near-infrared (NIR) emission with full-width at half-maximum (FWHM) of 495 nm is observed in the Bi-doped fiber. This observation, to our knowledge, is the first in this field. The NIR emission consists of two bands, which may be ascribed to the Bi 0 and Bi + species, respectively. This Bi-doped fiber is promising for broadband optical amplification and widely tunable laser.     

Bismuth-doped germanate glass fiber fabricated by the rod-in-tube technique

Bismuth(Bi)-doped laser glasses and fiber devices have aroused wide attentions due to their unique potential to work in the new spectral range of 1 to 1.8 μm traditional laser ions, such as rare earth, cannot reach. Current Bi-doped silica glass fibers have to be made by modified chemical vapor deposition at a temperature higher than2000°C. This unavoidably leads to the tremendous loss of Bi by evaporation, since the temperature is several hundred degrees Celsius higher than the Bi boiling temperature, and, therefore, trace Bi(～50 ppm) resides within the final product of silica fiber. So, the gain of such fiber is usually extremely low. One of the solutions is to make the fibers at a temperature much lower than the boiling temperature of Bi. The challenge for this is to find a lower melting point glass, which can stabilize Bi in the near infrared emission center and, meanwhile, does not lose glass transparency during fiber fabrication. None of previously reported Bi-doped multicomponent glasses can meet the prerequisite. Here, we, after hundreds of trials on optimization over glass components,activator content, melting temperature, etc., find a novel Bi-doped gallogermanate glass, which shows good tolerance to thermal impact and can accommodate a higher content of Bi. Consequently, we successfully manufacture the germanate fiber by a rod-in-tube technique at 850°C. The fiber exhibits similar luminescence to the bulk glass, and it shows saturated absorption at 808 nm rather than 980 nm as the incident power becomes higher than 4 W. Amplified spontaneous emissions are observed upon the pumps of either 980 or 1064 nm from germanate fiber.     

Improving luminescent property of SrIn2 O4 :Eu3+ by co-doped A+ （A = Li, Na, K） or Sm3+

A series of SrIn2 O4 :Eu3+ phosphors are synthesized by a high temperature solid-state method, and their luminescent properties are investigated. They can be excited by 395-nm radiation, and produce red emission (619 nm); however, they have a low absorption of near-ultraviolet light with the wavelength of 400nm-405 nm. When co-doped with A+ (A=Li, Na, K), the emission intensity of SrIn2O4 :Eu3+ is significantly enhanced, but its emission and excitation spectral profile is unchanged. With co-doping Sm3+ , not only is the emission intensity of SrIn2 O4 :Eu3+ enhanced, but also the absorption is broadened and strengthened in the range of 400 nm-405nm. The effect of Sm3+ -doped content on the emission intensity of SrIn2O4 :Eu3+ , Sm3+ is investigated, and the optimal Sm3+ content is 0.02 mol.     

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Ge+ ions are implanted into fused silica glass at room temperature and a fluence of 1×10 17 cm-2 . The as-implanted samples are annealed in O2, N2 and Ar atmospheres separately. Ge0 , GeO and GeO2 coexist in the as-implanted and annealed samples. Annealing in different atmospheres at 600℃ leads each composite to change its content. After annealing at 1000℃, there remains some amount of Ge 0 in the substrates. However, the content of Ge decreases due to out-diffusion. After annealing in N2 , Si–N composite is formed. The absorption peak of GeO appears at 240 nm after annealing in O2 atmosphere, and a new absorption peak occurs at 418 nm after annealing in N2 atmosphere, which is attributed to the Si–N composite. There is no absorption peak appearing after annealing in Ar atmosphere. Transmission electron microscopic images confirm the formation of Ge nanoparticles in the as-implanted sample and GeO 2 nanoparticles in the annealed sample. In the present study, the GeO content and the GeO2 content depend on annealing temperature and atmosphere. Three photoluminescence emission band peaks at 290, 385 and 415 nm appear after ion implantation and they become strong with the increase of annealing temperature below 700℃, and their photoluminescences recover to the values of as-grown samples after annealing at 700℃. Optical absorption and photoluminescence depend on the annealing temperature and atmosphere.     

Visible Upconversion Emission in Er3＋—Doped GeO2—PbO—PbF2 Glass

The upconversion fluorescence emission of Er3 -doped 60GeO2-2OPbO-2OPbF2 glass was experimentally investigated under the pump of 976-nm laser diode. The results reveal the existence of intense emission bands centred around 524, 545, and 657nm at room temperature. The green emission at 524 and 545nm is due to the 4S3/2 2 Hll/2→ 4I15/2 transition and the red emission of 657nm originates from the 4F9/2-→4I15/2 transition of Er3 . The quadratic dependence of the green and red emissions on excitation power indicates that a two-photonabsorption process occurs under the 976-nm excitation. The excited- state absorption from 4I ll/2 and the cross relaxation between two Er3 ions in the 4I ll/2 state contribute to the green emission. The red emission at 657nm is attributed to the excited-state absorption and cross relaxation processes in the 4I13/2 level as well as the 4S3/2 level nonradiative transition of Er3 .     

Investigation of emission properties of Tm3＋：Y2O3 transparent ceramic

A transparent and emitting ceramic of Y 2 O 3 doped with 6% Tm 3+ ions is fabricated by vacuum sintering with ZrO 2 . Absorption, photoluminescence (PL), and PL excitation (PLE) spectra are investigated in a spectral range of 200 to 2 100 nm at various temperatures between 296 and 12 K. Intense emission band appears at 450 to 465 nm in the visible range. Near-infrared emission bands are observed at 1 200 to 1 300 nm and 1 400 to 1 550 nm, with intense peaks at 1 270, 1 450, and 1 523 nm. The luminescence mechanisms and potential applications of the emissions are discussed with the help of Judd-Ofelt theory and PLE spectra.     

Investigation of the mechanism of upconversion luminescence in Er3＋/Yb3＋ co-doped Bi2Ti2O7 inverse opal

Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband nearinfrared (near-IR) emission around the wavelength utilized in telecommunications. In this study, broad near-IR emission band from 1 100 to 1 650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass and glass-ceramics under 820 nm of light excitation. Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi2-2 dimers. The precipitation of β-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass.     

Blue-to-Orange Tunable Luminescence from Europium Doped Yttrium--Silicon--Oxide--Nitride Phosphors

Europium-doped yttrium-silicon-oxide-nitride phosphors are synthesized by carbothermal reduction and nitridation method. The crystal structure of the phosphors changed gradually from oxide Y2Si2O7 to nitride YSi3N5 state with increasing dosage of Si3N4 and carbon powder. The Y2Si2O7：Eu phosphor shows a blue emission at 465 nm with 300 nm excitation and a characteristic red emission of Eu^3＋ at 612 nm with 230 nm excitation. The YSi3N5：EU phosphor shows a broad emission band centred at 595nm with some sharp peaks of Eu^3＋ with 325nm excitation. The absorption of the studied phosphors increases from 450 to 700hm with an increment in nitrogen content. Blue-to-orange tunable luminescence is observed with 390 nm excitation.     

Enhanced NIR emission in Ce^3＋/Er^3＋-doped YAG induced by Bi^3＋ doping

Ce^3＋/Er^3＋/Bi^3＋ triply-doped yttrium aluminum garnet （YAG） is synthesized using co-precipitation method. The Bi^3＋ concentration-dependent near-infrared （NIR） emission behavior is systemically in- vestigated. The NIR emission of Er^3＋ ions at 1531 nm is enhanced threefold by the addition of 7 mol% Bi^3＋. Bi^3＋doping results in the formation of exciton in YAG and the variation in the local environment of the doped rare-earth ions. The enhancement in NIR luminescence is ascribed to the combined effects of the sensitization of exciton→Ce^3＋ →Er^3＋ and the Bi^3＋ doping-induced adjustment of the local environment for Ce^3＋ and Er^3＋ ions.     

Growth and optical properties of Cr~（3＋）-doped CdWO_4 single crystals

A high-quality Cr 3+:CdWO4 single crystal at a size of approximatelyΦ25×80 mm is grown using the Bridgman method with CdO,WO3,and Cr2O3 as raw materials and their molar ratio of 100:100:0.5.The temperature gradient of solid-liquid interface at growth is approximately 50?C/cm and the growth rate is 0.05 mm/h.The X-ray diffraction(XRD),absorption,excitation,and emission spectra of different parts of the as-grown and O2-annealed crystals are investigated.Two strong broad optical absorption bands of about 472 and 708 nm are observed,and they are associated with the transitions 4 A2→ 4 T1 and 4 A2→ 4 T2.The weak 4 T2→ 2 E transition(the R-line)at 632 nm is also observed.The crystal-field parameter Dq and the Racah parameters B and C are estimated to be 1 412.4,776.8,and 3 427.6 cm? 1,respectively,according to the absorption spectra and crystal-splitting theory.A broadband fluorescence at about 1 000 nm due to 4 T2→ 4 A2 transition is produced by exciting the samples at 675 nm.After being annealed in an O2 atmosphere,the crystals become more transparent,while the effective light absorption of Cr 3+ ions is evidently enhanced and the emission intensity is also strengthened due to the reduction of oxygen vacancies in the CdWO4 crystal after annealing.