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1.
将传统的真空热蒸发镀膜实验加以改进,先以催化剂辅助蒸发制备出CdS纳米线,再将其作为模板,以ZnS为蒸发源物质,二次蒸发包覆ZnS层,成功制备出大量的CdS/ZnS核/壳异质结纳米线.经X射线衍射、X射线能量色散谱、透射电镜分析表明,所得CdS/ZnS异质结纳米线的核心部分为CdS单晶纳米线,外层为ZnS多晶层.本文的实验方法简便易行,所得纳米结构在光电纳米器件领域有一定应用前景.  相似文献   

2.
彭英才  范志东  白振华  马蕾 《物理学报》2010,59(2):1169-1174
以Au膜作为金属催化剂,直接从n-(111)Si单晶衬底上制备了直径为30—60nm和长度从几微米到几十微米的高质量Si纳米线.实验研究了Au膜层厚、退火温度、N2气流量和生长时间对Si纳米线形成的影响.结果表明,通过合理选择和优化组合上述各种工艺条件,可以实现直径、长度、形状和取向可控的纳米线生长.基于固-液-固生长机理,定性阐述了Si纳米线的形成过程.  相似文献   

3.
化学气相沉积法制备GaN纳米结构设计性实验   总被引:1,自引:0,他引:1  
在无催化剂辅助条件下,采用化学气相沉积法生长了GaN纳米线.通过调整衬底、NH3气流、生长时间等,实现了半导体GaN纳米线的生长以及形貌调控.用X射线衍射仪和扫描电子显微镜对产物的物相及形貌进行了表征.获得了合成GaN纳米线的优化条件.  相似文献   

4.
热蒸发法在硅基底上制备了任意取向的氧化锌纳米线阵列。经过热蒸发过程,硅基底表面覆盖了大量均匀分布的氧化锌岛,在这些岛上生长出了直径为几十纳米的非定向纳米线。出于实用考虑,基底周围的温度在制备过程中保持在500°C以下。从这些氧化锌纳米线获得了场发射。测得10μA/cm2所对应的开启场强为3.0V/μm。并且用透明阳极技术研究了发射中心分布。观察到场发射来自于整个样品表面。从这些结果可以看出氧化锌纳米线在平板显示器中有着巨大的应用潜力.  相似文献   

5.
程和  李燕  王锦春  邓宏 《发光学报》2006,27(6):991-994
采用化学气相沉积系统制备ZnO纳米线,以覆盖一层约5nm厚的Ag薄膜的单晶Si(001)为衬底,纳米线的生长遵循气-液-固(VLS)机理。对得到的样品采用X射线衍射(XRD)和扫描电镜(SEM)进行晶体结构和形貌的表征。XRD结果表明衬底温度在600~700℃时生长的ZnO纳米线具有六方结构和统一的取向。通过扫描电子显微镜分析,比较了生长温度对纳米线直径和长度的影响。实验表明我们可以通过催化剂和温度来实现ZnO纳米线生长的可控。与传统的VLS生长方式不同的是在我们制备的ZnO纳米线顶端并没有看到催化剂颗粒,表明纳米线的生长方式是底部生长,我们对其生长机理进行了研究。  相似文献   

6.
采用简单的热蒸发方法得到具有不同尺寸的混合ZnO-Zn2SnO4 (ZnO-ZTO)纳米线,并对纳米线进行结构和成分分析,试验还以甲基橙溶液为处理对象考察了ZnO-ZTO纳米线的光催化活性.结果表明ZnO-ZTO 混合纳米线的光催化性较纯ZnO、纯Zn2SnO4纳米线有较大提高; 光催化剂浓度对光降解效率有很大影响, 与纯ZnO、纯Zn2SnO4纳米线相比,少量的ZnO-ZTO纳米线即达到较高的光催化效率;并且光催化活性随着纳米线直径的减小而增加. 实验表明异质结的存在能够加快电子空穴的分离,提高光催化活  相似文献   

7.
一维量子材料制备新进展   总被引:5,自引:0,他引:5  
杨国伟 《物理》1998,27(11):641-642
文章简要评述了一种制备一维半导体量子材料的新方法,即用碳纳米管作为模板,通过化学气相反应生长半导体纳米线,用此方法已经成功地制备出了一系列碳化物纳米线,更重要的是还制备出了GaN纳米线.  相似文献   

8.
赖云锋 《物理学报》2010,59(12):8814-8819
将Mg(C11H19O2)2(即双(2,2,6,6,-四甲基-3,5-庚二酮酸)镁)作为反应前驱体,用脉冲液滴注入式金属有机物化学气相沉积法,在较低温度(T=600℃)下合成MgO纳米线.纳米线沿着[001]方向生长且Au催化剂位于纳米线顶端,这表明纳米线是由气-液-固机制诱导生长的.通过改变前驱体注入的脉冲周期或周期注入剂量能够控制纳米线的生长模式,使之垂直或平行于样品表面生长.  相似文献   

9.
静止水滴真空闪蒸模型及实验研究   总被引:2,自引:0,他引:2  
本文建立了描述真空制取二元冰过程中静止水滴的传热传质模型,研究冰晶形成过程的结晶成核与生长现象及其影响因素。设计并建立了一种可视化的真空制冰系统,清晰地展示了静态水滴成核结冰时液态蒸发、伴随气泡生长的蒸发、稳态蒸发结冰、伴随气泡生长的结冰、外部结冰内部气泡逸出最终爆裂的五种形态;利用所设计的二元冰真空制备装置进行冰晶的生成实验研究,分析讨论各种因素对二元冰真空制备的影响,并通过实验对照比较来证明模型的可靠性。  相似文献   

10.
采用电沉积的方法在多孔氧化铝模板中合成了直径为30 nm且沿着[0112]方向生长的单晶铋纳米线,测量了纳米线电导随着温度78~320 K变化的关系曲线. 结果发现,其半金属半导体转变的温度为230 K,且纳米线的电导有很强的温度依赖性.  相似文献   

11.
Single crystalline rutile titanium oxide nanowires have been synthesized in bulk yield based on commercial metal titanium by a facile water-assisted chemical vapor deposition method. The morphology, crystallinity, and phase structure of the nanowires have been characterized by scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and X-ray diffraction (XRD). This growth strategy is applicable for commercial metal titanium substrate with different spatial dimensions, such as powder, network mesh, and flat foil. The as-synthesized nanowires are found to be mainly composed of single crystalline rutile TiO2 nanowires in spiral shape with a small amount of hexagonal Ti2O nanowires with zigzag form. A growth mechanism has been proposed to explain the novel spiral and zigzag types of titanium oxide nanowires under moderate temperature (850 °C). This method promises an alternative way for industrialization of titanium oxide nanowires which may serve as a good candidate for various industrial applications such as optoelectronic, electronic, and electrochemical nanodevices.  相似文献   

12.
Semiconductor nanowires for novel one-dimensional devices   总被引:1,自引:0,他引:1  
Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, 1D structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor–liquid–solid growth method have made it possible to control not only the dimension and position of nanowires but also to control heterostructures formed inside the nanowires. Based on these techniques we have realized a series of transport devices such as resonant tunneling and single-electron transistors but also optically active single quantum dots positioned inside nanowires displaying sharp emission characteristics due to excitons.  相似文献   

13.
基于密度泛函理论框架下的第一性原理计算,系统地研究了多壳层Cu纳米线的稳定结构和电子特性.得到不同线径多壳层Cu纳米线的平衡态晶格常数相差不大,都表现出金属特性,且其单原子平均结合能和量子电导随着纳米线直径的增加而增加.纳米线中内壳层Cu原子表现出体相结构Cu原子相似的电子特性,而表面壳层由于配位数的减少,其3d态能量范围变窄且整体向费米能级发生移动.电荷密度分析表明,相对于体相Cu晶体中原子间的相互作用,纳米线表面壳层Cu原子与其最近邻原子间的相互作用明显增强.  相似文献   

14.
文章报道了一种通过在微型电极上加交流电场,实现有控制地高速度转动纳米线的通用方法.纳米线的转动可以被瞬时启动或瞬时停止,转动速度(每分钟至少可达1800rpm),方向和总转动角度都可被精确控制.文章作者推导出了流体阻力在不同长度纳米线上施加的转矩,还用一根转动的纳米线作为微型电动机,推动灰尘颗粒做圆周运动.这种方法可以被用来转动磁性的或者非磁性的纳米线,甚至碳纳米管.这和微流机械,微搅动机,以及MEMS的关系显而易见.  相似文献   

15.
Soft chemistry has emerged as an important means of generating nanocrystals, nanowires and other nanostructures of semiconducting materials. We describe the synthesis of CdS and other metal chalcogenide nanocrystals by a solvothermal route. We also describe the synthesis of nanocrystals of AlN, GaN and InN by the reaction of hexamethyldisilazane with the corresponding metal chloride or metal cupferronate under solvothermal conditions. Nanowires of Se and Te have been obtained by a self-seeding solution-based method. A single source precursor based on urea complexes of metal chlorides gives rise to metal nitride nanocrystals, nanowires and nanotubes. The liquidliquid interface provides an excellent medium for preparing single-crystalline films of metal chalcogenides.  相似文献   

16.
The dark and photo current–voltage characteristics (CVC), the absorption spectrum and the photosensitivity of the field effect transistor based on the silicon nanowires have been investigated. The spectral dependences of the photocurrent have been obtained. It is shown that the absorption capacity of the silicon nanowire is shifted to the shorter wavelengths. In contrast to the bulk silicon, the photocurrent and the photosensitivity rise at room temperature and have the record high values in the ultraviolet region. It is proposed to use the field-effect transistors based on the silicon nanowires operating at the room temperature as the highly-sensitive detectors for the ultraviolet spectral region.  相似文献   

17.
在聚二甲基硅氧烷衬底上梳理得到DNA阵列,并以DNA为模板通过低温乙醇还原得到Pd纳米线,再通过PDMS转移技术将Pd纳米线转移至不同的衬底,这是一种制备高导电性Pd纳米线的新方法.以DNA为模板的选择性生长控制方法可以显著抑制衬底上无规Pd纳米颗粒的出现. SEM观测制备的Pd纳米线的宽度约为80 nm,连续长度可达14 μm. FESEM、XPS和TEM表征揭示出Pd纳米线是由面心立方结构的Pd纳米晶粒组成,电学测量获得的Pd纳米线的电阻率为1.59 μΩm,仅比体电阻率高约一个量级. 研究还发现通过改变反应时间和温度可以有效调控Pd纳米线的生长过程.  相似文献   

18.
Nanowires are promising candidates for energy storage devices such as lithium-ion batteries, su- per(:apa.citors and lithium-air batteries. However, simple-structured nanowires have some limitations hence the strategies to make improvements need to be explored and investigated. Hierarchical nanowires with enhanced periormanee have been considered as an ideal candidate for energy storage due to the novel structures and/or synergistic properties. This review describes some of the recent progresses in the hierarchical nanowire merits, classification, synthesis and performance in energy storage applieat, ions. Herein we discuss the hierarchical nanowires based on their structural design from three major categories, including exterior design, interior design and aligned nanowire assembly. This review also briefly outlines the prospects of hierarchical nanowires in morphology control, property enhancement and application versatility.  相似文献   

19.
We have investigated the evolution of the magnetization reversal mechanism in asymmetric Ni nanowires as a function of their geometry. Circular nanowires are found to reverse their magnetization by the propagation of a vortex domain wall, while in very asymmetric nanowires the reversal is driven by the propagation of a transverse domain wall. The effect of shape asymmetry of the wire on coercivity and remanence is also studied. Angular dependence of the remanence and coercivity is also addressed. Tailoring the magnetization reversal mechanism in asymmetric nanowires can be useful for magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls. Finally, an alternative method to detect the presence of magnetic drops is proposed.  相似文献   

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