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1.
金属纳米线是未来纳米电子器件中的重要组成部分,因此研究单根金属纳米线的电学性质具有重要的意义。相对于单根纳米线电学性质的移位测量,原位测量精确度更高,结果更可靠。目前,国际上用于原位电学性质测量的单根纳米线的最小直径为80 nm,更小直径的纳米线很难在纳米孔道中生长,其电化学生长动力学过程还不清楚,电阻率数据缺失。本文在单个蚀刻离子径迹孔道中利用电化学沉积技术成功生长了单根Cu纳米线,其直径仅为64 nm,为目前同方法最细。在此基础上,首次测量了该纳米线的电输运性质并获得了其电阻率数值。研究结果表明,利用电导法可以监测模板中单个孔道的形成和扩孔的动力学过程以及最终的孔径大小。电化学沉积时,沉积电流与沉积时间曲线清晰地揭示了纳米线的沉积动力学过程。I-V曲线研究显示Cu纳米线具有典型的金属特性。其电阻率为3.46 μ?·cm,约是Cu块体材料电阻率的两倍。电阻率增大可能与电子在晶界和表面处的散射有关。Metal nanowires, as one of the most crucial components of nanoelectronic devices in the future, have attracted enormous attention. Therefore, it is of great significance to investigate the electrical properties of single metal nanowires. Herein, the single Cu nanowire with diameter of 64 nm was successfully prepared by using single-ion track template method combined with electrochemical deposition approach, and its I-V curve was measured. Such a diameter represents the thinnest one as comparing the reported ones obtained by the same method. The results illustrated that the process of formation and growth, as well as the final diameter of single nanochannel in template can be monitored and measured by conductance method. During the electrochemical deposition, the dynamic evolution of the deposition of nanowire can be clearly reflected through the deposition current and deposition time. At the same time, I-V measurements reveal that the Cu nanowire has typical metallic characteristic. For the first time, the resistivity of such a thin nanowire is obtained and its resistivity is 3.46 μ?·cm which is around twice that of Cu bulk materials. The increase of resistivity is believed coming from finite size effects and may be related to the electrons scattering at the grain boundaries and surfaces.  相似文献   

2.
"采用电场辅助电化学沉积法,利用阳极氧化铝模板模板制备了高度择优取向的硫掺杂ZnO单晶纳米线.X射线衍射仪、隧道电子显微镜、选取电子衍射对所得样品的结构、形貌分析表明,所得纳米线是沿(101)择优取向的六方纤锌矿结构单晶纳米线,长约几十微米、平均直径约70 nm. X射线光电子能谱对化学组成的分析进一步证实掺杂硫原子的存在.用荧光光谱仪(PL)对S掺杂前后的ZnO纳米线进行光学特性测量发现,S掺杂较大地改变了ZnO纳米线的发光性质.在PL谱中,除了有典型的ZnO纳米线在378、392 nm处的强紫外发光峰  相似文献   

3.
电化学沉积Fe与FePd纳米线阵列的磁性   总被引:4,自引:0,他引:4       下载免费PDF全文
利用电化学沉积方法在氧化铝模板中制备了一维Fe和Fe095Pd0 05合金纳米线阵列.两种样品均有(110)晶向择优取向,纳米线直径为60nm.在这一直径下形状各向异性 和内禀晶体各向异性的竞争结果很适合考察Pd掺杂的磁性行为.研究发现在FePd纳米线中, 由于极少量Pd在Fe中的合金化,减弱了晶体各向异性与形状各向异性的影响,改变了磁畴结 构,增强了畴壁钉扎作用,结果在Fe095Pd005纳米线 中便显示出强烈的沿线方向的各向异性,方形度和矫顽力也有较大改善. 关键词: 纳米线 电化学沉积 磁性  相似文献   

4.
采用乙酰丙酮铜为原料, 通过化学气相沉积大批量制备出Cu/C核/壳纳米颗粒和纳米线. 研究结果表明, 通过控制沉积温度可对Cu/C核/壳纳米材料的形貌和结构进行很好的控制. 比如, 沉积温度为400 ℃时可获得直径约200 nm的Cu/C核/壳纳米线, 沉积温度为450 ℃ 时可获得直径约200 nm的Cu/C核/壳纳米颗粒和纳米棒的混合产物, 沉积温度为600 ℃时可获得直径约22 nm的Cu/C核/壳纳米颗粒. 获得的Cu/C核/壳纳米结构是由一个新颖的凝聚机理形成的, 而这种机理不同于著名的溶解-析出机理. 紫外-可见光谱和荧光光谱分析结果表明: Cu/C核/壳纳米线和纳米颗粒均在225 nm处出现Cu的吸收峰, 同时在620 和616 nm处分别出现了纳米线和纳米颗粒的表面等离子共振吸收峰. Cu/C核/壳纳米线在312 和348 nm处、 Cu/C核/壳纳米颗粒在304 和345 nm处出现荧光发射谱峰. 关键词: Cu/C核/壳结构 纳米线 纳米颗粒 光学性能  相似文献   

5.
李志杰  田鸣  贺连龙 《物理学报》2011,60(9):98101-098101
借助二次模板法成功的合成了AlN纳米线宏观阵列,并进行了表征.主要研究CVD法制备有一定取向,直径均匀的AlN纳米线宏观阵列的过程.通过气相沉积法和利用PS球自组装模板制备了金属纳米颗粒模板;再以模板上的金属纳米颗粒作为催化剂,利用化学气相沉积在模板上合成AlN纳米线宏观阵列.借助SEM,TEM观察所得样品,AlN纳米线阵列面积约为0.3 mm×0.2 mm,直径和长度分布均匀,平均直径约为41 nm,平均长度为1.8 μm左右,分散密度和覆盖率大的六角结构AlN纳米线宏观阵列.得到了可控制备AlN纳米线 关键词: AlN纳米线阵列 模板法 CVD法 SEM  相似文献   

6.
多孔氧化铝模板制备ZnS纳米线阵列及其光致发光谱   总被引:5,自引:1,他引:4  
利用阳极氧化铝(AAO)模板,采用电化学沉积方法制备出了ZnS纳米线阵列。扫描电子显微镜(SEM)结果显示,AAO模板孔洞分布均匀,孔径基本一致(约50nm),孔口呈六边形。TEM结果显示硫化锌纳米线的直径约50nm(与AAM模板孔径一致),长度约为20μm(与AAM模板厚度一致)。电子衍射结果表明ZnS纳米线为多晶结构。比较了AAO模板组装ZnS纳米线阵列前后的光致发光谱,所得光谱显示,组装了ZnS纳米线阵列的模板的光致发光谱比没有组装的空模板相比多出两个发射峰,分别位于409,430nm,且其发光强度随激发波长的增长而增强。解谱分析表明,这即为ZnS纳米线阵列的发光光谱的两个发射峰,是由导带与受主能级间的跃迁发光和施主与受主能级间的复合跃迁发光共同作用所致。发现由于纳米线尺寸的单一性,发射峰窄化明显,半峰全宽较小,这种现象在其他文献中未曾报道过。  相似文献   

7.
金属Ni纳米线阵列的制备及其磁性能   总被引:3,自引:0,他引:3       下载免费PDF全文
朱浩  杨绍光  锁志勇  徐正  都有为 《物理学报》1999,48(13):111-115
以Anopore为模板,用电化学沉积的方法制备了磁性金属镍的纳米线阵列.纳米线的直径约为200nm,长度约为50μm,长度直径比L/D达到250.此系统中相邻纳米线间存在着很强的耦合,所以易磁化方向垂直于纳米线的轴向. 关键词:  相似文献   

8.
铁纳米线磁行为的微磁学模拟与研究   总被引:16,自引:0,他引:16       下载免费PDF全文
肖君军  孙超  薛德胜  李发伸 《物理学报》2001,50(8):1605-1609
通过微磁学模拟的手段对用电化学沉积法制备出的呈圆柱形的铁纳米线在常温下的磁行为进行了系统的研究,结果表明不同形状参量的铁纳米线都表现出磁各向异性,矫顽力随纳米线直径变化近似呈现平方反比关系,而对每一固定的直径,矫顽力随纳米线长度的增加而增大,最后趋向定值.磁滞回线形状、静态磁矩分布和反转机制等都随纳米线的直径和长度的变化而变化,对相应的规律给出了明确的解释.模拟结果显示实验上尚不能制备出的直径为5nm的纳米线呈现一致反转机理,同时还发现当纳米线过渡为颗粒时表现出更为复杂的性质 关键词: 纳米线 微磁学  相似文献   

9.
利用电化学沉积方法在同一种富Co2+溶液Co2+/Cu2+=10∶1中,利用不同的沉积电位成功地制备了一系列不同成分(x=0.38—0.87)和复合相结构的CoxCu1-x纳米线阵列.发现随着纳米线中Cu含量的变化,CoxCu1-x纳米线的复相结构随之发生规律的变化,最终导致纳米线的磁性也随之规律的变化.随着纳米线中Cu含量的不断增加,一部分Cu与Co形成面心立方结构(fcc)的CoCu固溶体,减弱了磁晶各向异性与形状各向异性的竞争,从而提高样品的方形度;一部分Cu以fcc结构的Cu单质的形式存在于纳米线中,并随着Cu颗粒大小的不同分别起到破坏磁晶各向异性和钉扎畴壁的作用,从而增加纳米线的方形度和矫顽力.对比不同成分的样品,发现CoxCu1-x纳米线的方形度和矫顽力的最大值分别出现在Co75Cu25和Co60Cu40中,并且由于其特殊的复相结构致使它们的值要好于相同直径的单相结构的结果. 关键词: 纳米线 电化学沉积 磁性  相似文献   

10.
利用直流电弧放电合成非晶碳氧化硅(SiCO)纳米线,不使用催化剂和模板,独立的SiCO 纳米线沉积在石墨锅的表面.通过XRD、SEM、TEM、XPS、FTIR等对SiCO纳米线进行了表征.结果表明,纳米线长度为20~100 μm,直径为10~100 nm,Si原子同C原子和氧原子分享成键组成SiCO单元.SiCO纳米线的光致发光谱在454和540 nm呈现了强而稳定的白色发光峰. SiCO纳米线的生长机制为等离子辅助气―固生长机制.  相似文献   

11.
徐天宁  李翔  贾文旺  隋成华  吴惠桢 《物理学报》2015,64(24):245201-245201
五边形截面的单晶Ag纳米线对ZnO量子点荧光具有增强的现象. 为解释这一现象, 利用时域有限差分法对五边形截面的Ag纳米线的局域表面等离子体共振模式进行了理论模拟. 结果表明, 五边形截面的Ag纳米线在紫外区域存在两个消光峰, 分别由Ag纳米线的横向偶极共振(340 nm)和四极共振(375 nm)引起; 这两个消光峰与ZnO量子点荧光增强峰相一致, 而且随着Ag纳米线的半径增大而红移; 消光峰对应的共振模式取决于Ag纳米线的截面形状; 根据Ag纳米线电场增强倍数与激发光波长变化关系曲线可知, 最大增强电场位于五边形截面的顶点处, 而边线处电场增强较小. 理论模拟的结果较好地解释了Ag纳米线/ZnO量子点体系的荧光增强现象, 也为Ag纳米线在提高半导体材料发光效率、生物探测等方面的应用提供有益的参考.  相似文献   

12.
Tracks of 49 MeV 35Cl ions in muscovite mica were analyzed by transmission electron microscopy up to 10 Å resolution applying the track replica method. The enlargement of the track diameter is measured as a function of etching time. The track shape evolution shows circular tracks for very short etching times. By increasing the etching time the tracks gradually become ovals. For longer etching times, tracks show the characteristic rhombic shape of the bulk region. A non monotonous decrease of the track velocity vs. radius is reported. Formation of a low velocity shell in the intermediate region between the central amorphous zone and the non-perturbed crystalline lattice is suggested.  相似文献   

13.
王海澎  柯少颖  杨杰  王茺  杨宇 《物理学报》2014,63(9):98104-098104
以自组装聚苯乙烯小球(PS)单层膜为掩膜,利用Au对Si表面的催化氧化作用以及KOH溶液对单晶Si的各向异性腐蚀特性,在Si(100)面上制备了一系列尺寸小于100 nm有序可控的Si纳米孔阵列.扫描电镜(SEM)和原子力显微镜(AFM)等的测试结果显示:当PS小球溶液与甲醇溶液的体积比为9:11时,可形成大面积无缺陷的单层膜;但当体积比过大时,会导致类似双层膜结构的形成;而当体积比过小时,会诱导形成点缺陷和线缺陷.对PS小球及溅射Au处理过的Si晶片进行KOH溶液腐蚀,随着腐蚀时间变长,纳米孔的横向尺寸和深度增大,其形貌由圆形逐渐变为倒金字塔型,当腐蚀时间超过10 min,纳米孔阵列的有序性遭到破坏.采用离子束溅射技术在倒金字塔型纳米孔衬底上获得了有序Ge/Si纳米岛,而在圆形纳米孔衬底上获得了有序Ge/Si纳米环.进一步对有序Ge/Si纳米岛及纳米环的形成机理进行了解释.  相似文献   

14.
为了满足超辐射发光管的短波长应用,采用InAlGaAs/AlGaAs量子点有源区和干法刻蚀工艺制备了短波长弯曲波导超辐射发光管。在1.6A脉冲电流注入下,器件峰值输出功率为29mW,中心波长为880nm,光谱半高宽为20.3nm。比较了干法刻蚀工艺和湿法腐蚀工艺对超辐射发光管器件性能的影响。在1.6A脉冲电流注入下,湿法腐蚀制备的器件峰值输出功率仅为7mW。与湿法腐蚀相比,干法刻蚀可以精确控制波导形状和参数,降低波导损耗,有效增大器件输出功率。  相似文献   

15.
We have determined stable geometries for pristine Si nanowires grown along their 100 axis through systematic density functional studies. Strikingly, Si nanowires with diameters smaller than 1.7 nm prefer a shape that has a square cross section. This stems from dimerization between corner atoms and also from benign reconstruction patterns that maximally saturate Si dangling bonds.  相似文献   

16.
Single-mode, highly directional and stable photoluminescence (PL) emission has been achieved from porous silicon microcavities (PSMs) fabricated by pulsed electrochemical etching. The full width at half maximum (FWHM) of the narrow PL peak available from a freshly etched PSM is about 9 nm. The emission concentrates in a cone of 10° around the normal of the sample, with a further reduced FWHM of ∼5.6 nm under angle-resolved measurements. Only the resonant peak is present in such angle-resolved PL spectra. No peak broadening is found upon exposure of the freshly prepared PSM to a He-Cd laser beam, and the peak becomes somewhat narrower (∼5.4 nm) after the PSM has been stored in an ambient environment for two weeks. At optimized etching parameters, even a 4-nm FWHM is achievable for the freshly etched PSM. In addition, scanning electron microscopy (SEM) plane-view images reveal that the single layer porous Si formed by pulsed current etching is more uniform and flatter than that formed by direct current (dc) etching, demonstrated by the well-distributed circular pores with small size in the former in comparison with the irregular interlinking pores in the latter. The SEM cross-section images show the existence of oriented Si columns of 10 nm diameter along the etching direction within the active layer, good reproducibility and flat interfaces. It is thus concluded that pulsed current etching is superior to dc etching in obtaining flat interfaces within the distributed Bragg reflectors because of its minor lateral etching. Received: 7 March 2001 / Accepted: 23 July 2001 / Published online: 30 October 2001  相似文献   

17.
Three tests have been performed to investigate whether cross sections determined experimentally from reflection electron energy loss spectroscopy (REELS) are more accurate than the Universal cross section for background correction of electron spectra. In the first test, the shape of background corrected spectra from a thin layer and from an infinitely thick layer of the same element were compared for the Ag3d, Au4d, and Yb4d peaks. It was found that the Universal cross section is more accurate than the experimentally determined REELS cross sections to determine consistently the peak shape of background corrected spectra. In the second test, the intensity ratio of the two components in the Au4d, Cu2p, Zn2p, and Yb4d doublets were compared to theoretical photoionization cross sections. For both the Universal and the REELS inelastic cross sections, the obtained intensity ratios agree well with theory. In the third test, we compare with theory the peak intensity ratios to Au4d of major peaks from Si, Cu, Ag, Yb, and Au obtained by using the Universal and the REELS cross sections for background correction. For the metals, the two cross sections give peak intensity ratios that are equally close to theory to within the expected uncertainties in the theoretical peak intensity ratios. However, for Ag with application of the Universal cross section the deviation from theory is slightly larger. For Si the REELS cross section is clearly most accurate.  相似文献   

18.
New simple way for silver deoxyribonucleic acid (DNA)-based nanowires preparation on silicon surface was developed. The electrochemical reduction of silver ions fixed on DNA molecule provides the forming of tightly matched zonate silver clusters. Highly homogeneous metallic clusters have a size about 30 nm. So the thickness of nanowires does not exceed 30–50 nm. The surface of n-type silicon monocrystal is the most convenient substrate for this procedure. The comparative analysis of DNA metallization on of n-type silicon with a similar way for nanowires fabrication on p-type silicon, freshly cleaved mica, and glass surface shows the advantage of n-type silicon, which is not only the substrate for DNA fixation but also the source of electrons for silver reduction. Images of bound DNA molecules and fabricated nanowires have been obtained using an atomic force microscope and a scanning ion helium microscope. DNA interaction with silver ions in a solution was examined by the methods of ultraviolet spectroscopy and circular dichroism.  相似文献   

19.
朱晓蕊  王卫东  秦广雍  焦浈 《物理学报》2013,62(7):77802-077802
用荷能重离子径迹刻蚀的方法在高分子多聚物膜 (PET) 上制备出单锥形纳米孔. 刻蚀过程通过监测跨膜电流来控制, 最大刻蚀电流Imax不同, 得到的锥形孔小孔孔径也不同. 研究单锥形纳米孔在KCl 溶液中的I-V曲线发现, 单锥形纳米孔的离子传导呈现出不对称特性, 该现象称为整流效应, 整流系数γ大小随纳米小孔孔径大小和电解质溶液浓度而变化. 关键词: 径迹刻蚀 纳米孔 离子传导 整流系数  相似文献   

20.
Highly ordered composite nanowires with multilayer Ni/Cu and NiFe/Cu have been fabricated by pulsed electrodeposition into nanoporous alumina membrane. The diameter of wires can be easily varied by pore size of alumina, ranging from 30 to 100 nm. The applied potential and the duration of each potential square pulse determine the thickness of the metal layers. The nanowires have been characterized by transmission electron microscopy (TEM), magnetic force microscopy (MFM), and vibrating sample magnetometer (VSM) measurements. The MFM images indicate that every ferromagnetic layer separated by Cu layer was present as single isolated domain-like magnet. This technique has potential use in the measurement and application of magnetic nanodevices.  相似文献   

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