Quantized conductance behavior of Pt metal nanoconstrictions under electrochemical potential control

We studied the quantized conductance behavior of mechanically fabricated Pt nanoconstrictions under electrochemical potential control in H₂SO₄, Na₂SO₄, and NaOH solutions. There was no clear feature in the conductance histogram, when the electrochemical potential of the nanoconstrictions was kept at the double layer or the under potential deposited hydrogen potential. At the hydrogen evolution potential, the conductance histograms showed clear features around 0.5 and 1 G₀ in the H₂SO₄ solution. In Na₂SO₄, and NaOH solutions, a 1 G₀ feature with a shoulder appeared in the histogram. The quantized conductance behavior of Pt nanoconstrictions could be controlled by the electrochemical potential and solution pH.     

Magnetic field effects on total and partial conductance histograms in Cu and Ni nanowires

Conductance histograms have become a powerful tool for studying transport properties of metallic nanowires. However, the individual conductance curves display a very rich structure that might be concealed by the statistical procedure of finding preferred conductance values by building conductance occurrence histograms using consecutive nanocontact breakage experiments. This is particularly true when it comes to discerning 1/2G₀=e²/hquantization in magnetic nanowires. The effect of disorder, added to possible magnetic sources of scattering, and different magnetic states of different nanowires, might hide its appearance as histogram peaks. This work analyzes and compares Ni and Cu nanowire experimental histograms at room temperature (RT). Those obtained with no curve selection criteria are basically unaffected by the presence of a magnetic field. A selection of particular sets of conductance curves shows that conductance quantization could occur in steps of e²/h and 2e²/h in Ni as well as in Cu in the presence or absence of a magnetic field. Sorting out curves in sets that present conductance plateaus at half integer and integer values, and compiling statistics on the number of such curves that appear, depending on the applied magnetic field, results in differences between the behaviour of Cu and Ni. While for Cu, the magnetic field keeps the ratio of curves that present plateaus at 1/2G₀with respect those presenting G₀ plateaus unchanged; for Ni, the number of curves which exhibit plateaus at just G₀ almost disappears with the applied field. This experimental fact might indicate that the magnetic field removes spin degeneracy in these magnetic nanowires. PACS 72.25.Ba; 73.40.Jn; 73.63.Rt; 75.75.+a     

Bias-dependence of the conductance of Au nanocontacts at 4 K

The bias-dependence of the quantized conductance in Au nanocontacts has been measured at liquid He temperature. A well-defined 1G₀ peak (G₀=2e²/h is the conductance quantum unit) appears in the conductance histogram. With increasing the bias, the 1G₀ peak decreases in height, while its position remains unshifted. This behavior of the 1G₀ peak is just the same as that observed at room temperature [H. Yasuda, A. Sakai, Phys. Rev. B 56 (1997) 1069]. The critical bias V_bc at which the 1G₀ peak disappears is ∼2.2 V, which is not much different from V_bc at 300 and 77 K. This weak temperature dependence of V_bc is compatible with high-current contact instability due to electromigration of contact atoms.     

Conductance of atom-sized contacts of transition metals at room temperature

Exploiting the mechanically controllable break junction technique, we have measured the conductance of atom-sized contacts of Fe, Co, and Ni at room temperature under ultrahigh vacuum conditions. The conductance histogram of Fe exhibits a broad peak around 2.5 G₀ (G₀ ≡ 2e²/h), whereas those of Co and Ni show no conductance peaks. However, the histograms of Co and Ni display different structures: While the Co histogram is simply flat, the Ni histogram reveals an appreciable background. Our experimental results are compared with previous results obtained at cryogenic and room temperatures, and the observed peak missing in our room-temperature histograms of Co and Ni is discussed.     

Electrochemical fabrication and characterization of nanocontacts and nm-sized gaps

Copper nanocontacts and molecular-sized nanogaps were prepared and characterized at electrified solid/liquid interfaces employing lithographic and electrochemical techniques. A dedicated four-electrode potentiostat was developed for controlling the electrochemical fabrication process and for monitoring the electrical characteristics of the nanostructures created. The formation and breaking of Cu nanocontacts exhibits conductance quantization characteristics. The statistical analysis of conductance histograms revealed a preferential stability of nanocontacts with integer values of G₀, with a clear preference for 1 G₀, 2 G₀ and 3 G₀. The growth of molecular-sized gaps shows quantized tunneling current, which is attributed to the discrete nature of Cu atoms, water molecules, and specifically adsorbed ions. PACS 73.23Ad; 73.63.Rt; 82.45.Yz; 85.35.-p     

Electric conductance of metal nanowires at mechanically controllable break junctions under electrochemical potential control

We have developed the mechanically controllable break junction setup with an electrochemical cell (EC-MCBJ) to measure the electric conductance of metal nanowires under electrochemical potential control. The electric conductance of Au nanowires was investigated in 0.1 M Na₂SO₄ solution using EC-MCBJ. The conductance of the Au nanowires was quantized in units of G₀ (=2e²/h), showing clear features in the conductance histogram. The atomic contact with a specific conductance value was kept for >5 s, indicating the relatively high stability of the present EC-MCBJ system.     

Break conductance of Al nanocontacts

We measured a break conductance, the last conductance of a contact before its complete break, for Al nanocontacts of 0–200G₀ (G₀≡2e²/h is the quantum unit of conductance) in ultrahigh vacuum at room temperature. We found that the distribution of the break conductance shows a broad single peak, the position of which shifts with the contact current. From the observed current dependence of the break conductance peak, it is suggested that Al nanocontacts break up most likely when the contact current density reaches a critical value 5×10¹⁰ A/cm².     

Magnetism-induced ballistic conductance changes in palladium nanocontacts

We present first-principles calculations of the effects of magnetism on the ballistic conductance of a model Pd nanocontact, made of a short Pd monatomic stretched chain placed between two Pd leads, simulated by semi-infinite (100) slabs. The stretching makes the suspended Pd chain generally ferromagnetic. The spin-resolved ballistic conductance, calculated according to the Landauer-Büttiker formula is found to be 0.85G₀ for the spin-up and 1.15G₀ for the spin-down electrons (G₀ = 2e²/h is the conductance quantum). The total conductance ~2G₀ is lower, but still relatively close to that of the nonmagnetic Pd nanocontact with the same geometry, calculated to be 2.3G₀. To illustrate how magnetism and conductance depend on structural details, we change the three atom chain docking from the top to a hollow surface site, where at the same stress the Pd contact is nonmagnetic and the conductance decreases to 1.8G₀. Overall we find these calculated ballistic conductance values of very similar magnitude to the first histogram peak in the experimental data obtained for Pd at low temperature in mechanically controllable break junctions. We conclude that the 15% conductance changes caused by the onset or the demise of local magnetism, similar in magnitude to geometry-related conductance changes, are probably too small to be used as a diagnostic for the presence or absence of nanocontact magnetism.     

Fractional quantum conductance in gold nanowires

The conductance of a nanoscopic wire decreases in steps when it is stretched until it breaks. This is due to narrowing of the wire whereby quantized conductance channels sequentially close. However the conductance plateaus seldom occur at integral multiples of the quantum of conductance G₀ and most steps are much smaller than G₀. High speed precision measurements of the conductance steps reveal that the nanowires are composed of not one but several quantized conductors in series and that a step is caused by a quantized conductance change in one of the elements in the sequence. Resolved series conductance quanta up to 20 G₀ have been observed at room temperature. The effect is explained in terms of elastic electronic scattering and has important consequences for nano-electronic circuitry.     

Conductance of Copper and Nickel Nanowires with Constrictions

Theoretical studies of the conductance of Ni and Cu ultrathin wires are performed for both the ideal purely ballistic case and structures with constrictions (necks), under constraint of local charge neutrality. The computational method is based on realistic tight-binding Hamiltonian and a Landauer-type conductance expression derived by means of the Green's function technique. It is shown that in the presence of short nonadiabatic constrictions the conductance is no longer quantized at integer multiples of e ²/h. Besides: (i) a plot has been made to visualize how the number of contact atoms influences the conductance, and (ii) the spin polarization of Ni conductance has been revealed.     

Ballistic transport in PbTe-based nanostructures

We describe our study of ballistic transport in nanostructures of lead telluride, PbTe. Submicron devices have been fabricated by electron beam lithography and chemical etching of 50 nm wide PbTe single quantum wells embedded between Pb_0.92Eu_0.08Te barriers grown by MBE on BaF₂. The electron concentration in the devices was tuned by the gate voltage applied across an interfacial p–n junction. The most important observation was zero-magnetic field conductance quantization (in multiplies of 2e²/h) in narrow constrictions of dimensions comparable to electron mean free path calculated from transport mobility. This indicates considerable relaxation of requirements for quantum ballistic transport in comparison with other materials. We argue that the huge static dielectric constant of PbTe (₀=1350 at 4.2 K) leads to suppression of the long-range Coulomb potentials of charged impurities and, thus, provides favorable conditions for the conductance quantization.     

Quantum transport in low-dimensional AlGaN/GaN systems

In this work, we investigated the magnetotransport properties of a two dimensional electron gas hosted in an AlGaN/AlN/GaN heterostructure and one-dimensional devices fabricated on it. At cryogenic temperature, high mobility and long mean free path is achieved, allowing ballistic transport experiments. Longitudinal resistivity measured in Hall bar geometry shows well-developed Shubnikov–de Haas oscillations with amplitude modulation. Amongst possible mechanisms, the zero-field spin splitting may be the origin of the observed effects. Split gate quantum point contacts were fabricated by electron beam lithography. Linear conductance measurements at zero magnetic field show clear quantized conductance plateaus at 2e ²/h and 4e ²/h. Non-perfectly quantized conductance values are found for higher plateaus, suggesting the presence of impurity scattering.     

Synthesis,Thermal Behavior,and Antimicrobial Activity of a Novel Macrocycle and its Transition Metal Complexes Derived from Thiosemicarbazide

The present study reports the synthesis of Co(II), Ni(II), Mn(II), Cu(II), and Zn(II) complexes with a new macrocyclic ligand (L₂)- 1,2,8,9,11,14-hexaazacyclopentadeca-12,13-dioxo-10,15-dithione-2,7-diene. The macrocycle was derived from thiosemicabazone (L₁) and diethyloxalate that were prepared by the reaction of thiosemicarbazide and glutaraldehyde in the ratio of 2:1. The synthesized complexes and ligands were characterized by elemental analysis and molar conductance, magnetic susceptibility, ¹HNMR, IR, electronic, and thermogravimetric analyses. The molar conductance values confirmed that the Ni(II), Cu(II), Zn(II), Mn(II) and Co(II) complexes were 1:2 electrolytes. On the basis of electronic spectral studies and molar conductance measurements, the authors proposed an octahedral structure for Ni(II), Mn(II), and Co(II) complexes, tetrahedral geometry for Zn(II) complex, and square planar geometry for Cu(II) complex. The thermal behavior of the compounds was studied by TGA in a nitrogen atmosphere up to 750°C at the rate of 20°C/min. The TGA results revealed that the complexes had higher thermal stability than the macrocycle. All the synthesized compounds were screened against 4 bacteria (i.e., Streptococcus aureus, Escherichia coli, Bacillus subtillis, Salmonella typhimurium) and 2 fungi (i.e., Fusarium oryzae, Candida albicans). The results showed that the metal complexes inhibited the growth of bacteria to a greater extent as compared to the ligand.     

Quantum corrections to the conductance of n-GaAs films in a strong magnetic field

The conductance of doped n-GaAs films is studied experimentally as a function of magnetic field and temperature in strong magnetic fields right up to the quantum limit (ħω_c = E _F). The Hall conductance G _xy is virtually independent of temperature T until the transverse conductance G _xx is quite large compared with e ²/h. In strong fields, when G _xx becomes comparable to e ²/h, G _xy starts to depend on T. The difference between the conductances G _xx at the two temperatures 4.2 and 0.35 K depends only weakly on the magnetic field H over a wide range of magnetic fields, while the conductances G _xx themselves vary strongly. The results can be explained by quantum corrections to the conductance as a result of the electron-electron interaction in the diffusion channel. The possibility of quantization of the Hall conductance as a result of the electron-electron interaction is discussed. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 3, 201–206 (10 February 1998)     

Spin-pumping-enhanced magnetic damping in ultrathin Cu(0 0 1)/Co/Cu and Cu(0 0 1)/Ni/Cu films

The influence of the Cu capping layer thickness on the spin pumping effect in ultrathin epitaxial Co and Ni films on Cu(0 0 1) was investigated by in situ ultrahigh vacuum ferromagnetic resonance. A pronounced increase in the linewidth is observed at the onset of spin pumping for capping layer thicknesses d_Cu larger than 5 ML, saturating at d_Cu = 20 ML for both systems. The spin mixing conductance for Co/Cu and Ni/Cu interfaces was evaluated.     

0.7 structure in long quantum wires

While quantized conductance steps in short quantum wires are understood through a single electron picture, additional structure often observed in high-quality one-dimensional systems near g=0.7×(2e²/h) is commonly interpreted as arising due to many-body interactions. Most studies of conductance structure below 2e²/h use short one-dimensional wires where transport is known to be ballistic. We report transport measurements for both short (0.5 μm) and long (5 μm) quantum wires, and use both conductance and nonlinear transport to explore the behavior of one-dimensional wires.     

Strange and singlet form factors of the nucleon: Predictions for G0, A4, and HAPPEX II experiments

We investigate the strange and flavor-singlet electric and magnetic form factors of the nucleon within the framework of the SU(3) chiral quark-soliton model. Isospin symmetry is assumed and the symmetry-conserving SU(3) quantization is employed, rotational and strange-quark mass corrections being included. For the experiments G0, A4, and HAPPEX II we predict the quantities G⁰_E + G⁰_M and G^s_E + G^s_M. The dependence of the results on the parameters of the model and the treatment of the Yukawa asymptotic behavior of the soliton are investigated.     

Fabrication and transport properties of multiwall carbon nanotube crossroads

A multiwall carbon nanotube crossroads has been fabricated by a manipulation technique using a glass microcapillary, and the low temperature transport properties investigated. The two-terminal conductance of an individual tube shows Tomonaga–Luttinger liquid behavior G∝T^α at high temperature and dI/dV ∝V ^α at low temperature. However, no evidence of such a power-law behavior is obtained in the four-terminal conductance at the junction, where the conductance shows an almost metallic behavior ‘corrected’ by weak localization. Weak localization would essentially appear in electron states at the junctions of MWNTs.     

Electronic conductance of a multi-channel point contact in a magnetic field

We present the numerical results of the electronic conductanceG of a quantum wire with a multichannel point contact structure in a perpendicular external magnetic fieldH at zero temperature, based on the rigorous quantum mechanics of a two-dimensional noninteracting electron gas. Computational results show the approximate quantization of the electronic conductance. WheH is weak,Ginteger multiples of 2e ²/h; and whenH is trong, Ginteger multiples of 2ne ²/h, wheren is the number of channels in the point contact structure of the quantum wire. Quantum leaps take place whenH±2m ^* E _F /[e(2j+1)], wherej is either zero or a positive integer small enough for the external magnetic fieldH to be strong, andm ^* is the effective mass of an electron in the device. To our knowledge, no report on this quantization of electronic conductance has been published. Oscillations are manifest in theGH curves for comparatively narrow channels because of the quantum size effect.