A multi-parameter optical fiber sensor with interrogation and discrimination capabilities

A multi-parameter and multi-function, but low-cost, optical fiber grating sensor with self-interrogation and self-discrimination capabilities is presented theoretically and experimentally. The sensor bases on three fiber Bragg gratings (FBG) and one fiber long period grating (LPG). Strain, vibration, pressure, ordinary temperature (−10 to 100 °C) and high temperature (100–800 °C) can be measured by the sensor. When high temperature (100–800 °C) is measured, the LPG is used as a high temperture sensor head and FBG₁ is used as an interrogation element. Alternatively, when one of the other four measurands is measured, FBG₁ (or FBG₂) is used as a sensor head and LPG is used as an interrogation element. When two of the other four measurands are measured simultaneously, FBG₁ and FBG₂ are used as sensor heads and LPG is used as a shared interrogation element. FBG₃ is used as a reference element to eliminate the errors resulted from light source fluctuation and the cross-sensitivity between measurand and environmental temperature. The measurands can be interrogated according to the signals of the photodiodes (PDs), which are related to the relative wavelength shift of the LPG and the FBGs. Experimental results agree well with theoretical analyses. The interrogation scheme is immune to light source fluctuation and the cross-sensitivity between measurands and enviromental temperature, and also the dynamic range is large.     

Determination and analysis of dispersive optical constants of CuIn3S5 thin films

CuIn₃S₅ thin films were prepared from powder by thermal evaporation under vacuum (10⁻⁶ mbar) onto glass substrates. The glass substrates were heated from 30 to 200 °C. The films were characterized for their optical properties using optical measurement techniques (transmittance and reflectance). We have determined the energy and nature of the optical transitions of films. The optical constants of the deposited films were determined in the spectral range 300-1800 nm from the analysis of transmission and reflection data. The Swanepoel envelope method was employed on the interference fringes of transmittance patterns for the determination of variation of refractive index with wavelength. Wemple-Di Domenico single oscillator model was applied to determine the optical constants such as oscillator energy E₀ and dispersion energy E_d of the films deposited at different substrate temperatures. The electric free carrier susceptibility and the ratio of the carrier concentration to the effective mass were estimated according to the model of Spitzer and Fan.     

Chiral optical absorption bands in [ ]Cd1−x Mnx Ga2S4 semiconducting compound

[ ]Cd_1−x Mn_x Ga₂S₄ is a semimagnetic semiconductor and it has revealed an exceptional property namely ‘optical activity‘. Therefore, a spectroscopic investigation of chiral absorption bands has been carried out with the view to examine the role of d*-d states of manganese atoms. It has been found that inner transitions of Mn⁺⁺ dominate the spectral region with a special feature, indicating that these transitions show the presence of a substantial contribution from the magnetic dipole moment which rotates the electric vector of the incident polarized radiation. The origin is associated to the lack of a symmetry center caused by the ordered vacancies in this defect compound.     

Spatial-temporal instability and optical turbulence upon the formation of spontaneous gratings by S-polarized light in waveguide AgCl-Ag films

The spatial-temporal instability of the spontaneous gratings formed in waveguide AgCl-Ag films under irradiation with an S-polarized laser beam is investigated. The studies are based on the simultaneous observation of diffraction (D) patterns formed by the S _? gratings and small-angle scattering (SAS). The transverse instability of D and SAS patterns was found to be associated with excitation of TE₀ modes at different angles with respect to the plane of incidence by scattering centers of Rayleigh type with the following formation of microgratings by the scattered modes and with their competition. It is shown that the time evolution of the form and the dynamic shift of the D patterns is also connected with the time dependence of the effective refractive index for TE₀ modes. In the case when a focused laser beam was used, the optical turbulence was found in the SAS and D patterns, caused, mainly, by the competition of S _?-and S ₊-microgratings, which eventually leads to the destruction of the latter.     

Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4

Room temperature photoluminescence quantum efficiency of the alloy of Ca_1−xEu_xGa₂S₄ was measured as a function of x, and was found to be nearly unity under excitation at peak wavelength of excitation spectrum (510 nm) in the x range of 0.01≤x≤0.2. At larger x values, it tends to decrease, but still as high as 30% for stoichiometric compound EuGa₂S₄. Taking these backgrounds into account, pump-probe experiments were done with Ca_1−xEu_xGa₂S₄ for searching optical gain at x=0.2. The optical gain of nearly 30 cm⁻¹ was confirmed to exist, though the pumping induced transient absorption which seems to limit the higher gain was found.     

Charging of glassy chalcogenide semiconductors in corona discharge and its effect on holographic grating formation

Recording of optical holographic gratings based on photostructural transformations in thin (≈ 1 μm) As₂S₃ and As₂S₃ semiconductor layers in the presence and absence of a corona discharge and also chemical etching of these gratings are studied. Initiation of a corona at the stage of interference grating recording is shown to improve the exposure contrast of metal-glassy chalcogenide semiconductor thin-film structures. The holographic sensitivity, diffraction efficiency, dynamic range, and contrast are also improved severalfold. When phase relief gratings formed in these layers are selectively etched in a chemical etchant in the presence of a corona, their profile becomes more regular and deeper by 25–30% and the diffraction efficiency increases by 30–50%.     

Spontaneous S_ gratings and specific features of their formation and evolution in photosensitive AgCl-Ag films

The formation and evolution of spontaneous S_ gratings in photosensitive waveguide AgCl-Ag films under the action of a laser beam are investigated experimentally and theoretically. It is found that in the cases of s and p polarizations of laser radiation these gratings differ significantly not only in the period but also in the structure and spatial and temporal stability. The different character of the gratings is explained in detail by the competition between the S_ gratings and other gratings evolving simultaneously in the film and the change in the scattering indicatrix in the case of p polarization as a result of intense evolution of degenerate C gratings. The regularity of S_ gratings on TM₀ modes in the case of p polarization and large angles of incidence makes it possible to increase the accuracy of determining the refractive indices of substrates using AgCl films corresponding to the cutoff thicknesses of TM₀ waveguide modes.     

Optical characterization of CuIn5S8 crystals by ellipsometry measurements

Optical properties of CuIn₅S₈ crystals grown by Bridgman method were investigated by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficients were obtained from the analysis of ellipsometry experiments performed in the 1.2–6.2 eV spectral region. Analysis of spectral dependence of the absorption coefficient revealed the existence of direct band gap transitions with energy 1.53 eV. Wemple–DiDomenico and Spitzer–Fan models were used to find the oscillator energy, dispersion energy, zero-frequency refractive index and high-frequency dielectric constant values. Structural properties of the CuIn₅S₈ crystals were investigated using X-ray diffraction and energy dispersive spectroscopy analysis.     

Enhancement of second-order optical nonlinearity in photo-darkened Ge25Sb10S65 chalcogenide glass by femtosecond laser light

The second-order optical nonlinearity of poled Ge₂₅Sb₁₀S₆₅ chalcogenide glass was found to be 40-50% larger after femtosecond laser irradiation. The highest χ⁽²⁾ was 11.4 pm/V. Raman spectral change indicated that centrosymmetric defects were created by fs light. These defects promoted the third-order optical nonlinearity of the glass and as a result, its second-order nonlinearity was also enhanced. The study shows that fs laser modification is an effective method of increasing the optical nonlinearity of photonic materials.     

Resonances at slow electron collisions with zinc atoms and ions

The optical excitation functions of four spectral lines corresponding to the transitions from the 4¹ D ₂, 5³ S ₁, 4³ D _j, and 6¹ S ₀ levels of atomic Zn were investigated with an electron spectrometer of a new construction. For the first time, elastic scattering of slow electrons from the Zn ions at an angle close to 180° was studied. In the energy range under investigation (0–7 eV), both the optical excitation functions of atomic spectral lines and the differential cross section of elastic scattering manifested the resonant structure caused by the contribution of autoionization states of the atom.     

Formation of Ge35In8S57 amorphous films for optical applications

Thin films of In-doped Ge-S in the form of Ge₃₅In₈S₅₇ with different film thickness were deposited using an evaporation method. The X-ray diffraction studies demonstrate that the as-prepared films are amorphous in nature for these films. Some optical constants were calculated at a thickness of 150, 300, 450 and 900?nm and annealing temperature of 373, 413, 437 and 513?K. Our optical observations show that the mechanism of the optical transition obeys the indirect transition. It was found that the energy gap, E_g, decreases from 2.44 to 2.20?eV with expanding the thickness of the film from 150 to 900?nm. On the other hand, it was found that E_g increases with annealing temperature from 373 to 513?K. The increment in the band gap can be attributed to the gradual annealing out of the unsaturated bonds delivering a decreasing the density of localized states in the band structure. Using the single oscillator model, the dispersion of the refractive index is described. The dispersion constants of these films were calculated with different both thickness and annealing temperatures. Additionally, both of nonlinear susceptibility, χ⁽³⁾ and nonlinear refractive index, n₂ were calculated.     

High‐energy optical parametric oscillator for the 6 μm spectral range based on HgGa2S4 pumped at 1064 nm

The defect chalcopyrite crystal HgGa₂S₄ has been employed in a 1064‐nm pumped optical parametric oscillator to generate <7 ns long idler pulses near 6.3 μm with energies as high as 3 mJ, tunable in a broad spectral range from 4.5 to 9 μm.     

Exciton spectra, valence band splitting, and energy band structure of CuGaXIn1−XS2 and CuGaXIn1−XSe2 crystals

Exciton spectra are studied in CuGa_XIn_1−XS₂ solid solutions by means of photoreflectivity and wavelength modulation spectroscopy at liquid nitrogen temperature. The exciton parameters, dielectric constants, and free carrier effective masses are deduced from experimental spectra by calculations in the framework of a model taking into account the spatial dispersion and the presence of a dead-layer. The crystal field and spin orbit valence band splitting is calculated as a function of X taking into account the energy position of excitonic lines. The energy band structure of CuGa_XIn_1−XS₂ and CuGa_XIn_1−XSe₂ compounds is derived from optical spectra at photon energies higher than the fundamental band gap. The energies of optical transitions are tabulated for X values from 0 to 1.     

Preparation of Ca(1−x)EuxGa2S4 crystals and their photoluminescence, absorption and excitation spectra

The single crystal of CaGa₂S₄:Eu is expected as a useful laser material with a high quantum efficiency of light emission. However, as far as our knowledge is concerned, the systematic study of the mixed compounds of Ca_(1−x)Eu_xGa₂S₄ as a function of x has not been reported up to now. Here, we have first constructed the phase diagram of the CaGa₂S₄ and EuGa₂S₄ pseudo binary system, and show that it forms the solid solution. Then we have grown single crystals of these compounds. The maximum photoluminescence efficiency is achieved at x=0.25. From the three peak energies observed in the photoluminescence excitation (PLE) and absorption spectra, the 5d excited states are suggested to consist of three levels arising from the multiplets of Eu²⁺ ions.     

Third-order nonlinear optical properties of Bi2S3 and Sb2S3 nanorods studied by the Z-scan technique

Bismuth sulfide (Bi₂S₃) and antimony sulfide (Sb₂S₃) nanorods were synthesized by hydrothermal method. The products were characterized by UV-vis spectrophotometer, X-ray powder diffraction (XRD) and transmission electron microscope (TEM). Bi₂S₃ and Sb₂S₃ nanorods were measured by Z-scan technique to investigate the third-order nonlinear optical (NLO) properties. The result of NLO measurements shows that the Bi₂S₃ and Sb₂S₃ nanorods have the behaviors of the third-order NLO properties of both NLO absorption and NLO refraction with self-focusing effects. The third-order NLO coefficient χ⁽³⁾ of the Bi₂S₃ and Sb₂S₃ nanorods are 6.25×10⁻¹¹ esu and 4.55×10⁻¹¹ esu, respectively. The Sb₂S₃ and Bi₂S₃ nanorods with large third-order NLO coefficient are promising materials for applications in optical devices.     

Effect of Ga addition on optical properties of crystalline Ga20Se80 system

Ga_xSe_100−x (20 ≤ x ≤ 50) in polycrystalline form was prepared by direct fusion of stoichiometric proportions of pure elements. The spectral behavior of transmittance (T) and the reflectance (R) in the wavelength range 400–2500 nm for all films of different thicknesses were measured to obtain different optical parameters (refractive index, n, and absorption index, k). The study of inter-band transitions indicates that the existence of direct forbidden transitions and indirect forbidden transitions with energy gaps decrease with increasing Ga percentage.     

Direct observation of the optical anisotropy of C70 fullerene molecules in the Shpol’skii spectra

Linear optical absorption and emission spectra of C₇₀ fullerene molecules in single-crystal toluene are investigated. It is established that the lines of purely electronic S ₀-S ₁ transitions are significantly polarized. The degree of linear polarization of the spectral lines depends on the position of the fullerene molecule in the toluene matrix and can be as high as 100%. The polarization characteristics of the lines can be understood in the context of a model in which the S ₀ → S ₁ electronic transition is represented by the excitation of a planar oscillator whose axis is oriented along the principal axis of the C₇₀ molecule. The relationship between the polarization of the spectral lines and the position of the fullerene molecule in the matrix is consistent with the conclusions drawn from a theoretical analysis of different configurations possible upon the embedding of C₇₀ molecules into crystalline toluene.     

Energy band structure and Frenkel excitons in PbGa2S4

Optical reflection spectra are measured and calculated in PbGa₂S₄ crystals in the region of resonances related to excitons with large oscillator strength and binding energy (Frenkel excitons). The splitting of the upper valence band in the center of the Brillouin zone due to crystal field (Δ_cf) and spin orbit (Δ_so) interaction are determined. Optical reflection spectra are measured and calculated according to Kramers-Kronig relations in the region of 3-6 eV in Е⊥с and Е∥с polarizations, and the optical constants n, k, ε₁ and ε₂ are determined. The observed electronic transitions in PbGa₂S₄ crystals are discussed in the frame of theoretical energy band structure calculation for thiogallate crystals.     

Thermal annealing effect of on optical constants of vacuum evaporated Se75S25−xCdx chalcogenide thin films

Chalcogenide glasses are interesting materials due to their infrared transmitting properties and photo induced effects exhibited by them. Thin films with thickness of 3000 Å of the glasses Se₇₅S_25−xCd_x with x=6, 8 and 10 at% prepared by melt quench technique were evaporated by thermal evaporation onto glass substrates under a vacuum of 10⁻⁶ Torr. The optical constants (absorption coefficient, refractive index and extinction coefficient) of as-prepared and annealed films have been studied as a function of photon energy in the wave length region 400-1000 nm. Analysis of the optical absorption data shows that the rule of non-direct transitions predominates. It has been found that the absorption coefficient and optical band gap increase with increasing annealing temperatures. The refractive index (n) and the extinction coefficient (k) were observed to decrease with increasing annealing temperature.     

Index of refraction and d. c. electrical conductivity in Ge40−xSbxS60 glasses

The spectral dependence of the index of refraction (n) in Ge_40?xSb_xS₆₀ glasses has been described by a simple one-oscillator approximation using the Wemple-DiDomenico treatment (W-D). The possibility of application of the Moss formula or W-D in some amorphous materials for estimation of the optical gap (E _g) fromn or vice versa has been examined. From the results of optical and d.c. electrical conductivity measurements and bond statistics suggestions it can be concluded that many types of defect states are created in Ge_40?xSb_xS₆₀ glasses, which pin the Fermi level in the vicinity ofE _g/2.